| UV Photoluminescence
Three UV lasers (193 nm Excimer, 244 nm Fred Argon-Ion, and 325 nm HeCd), monochromatoer, electronics, and computer system used to charicterize III-Nitride materials.
| UV Device Charicterization |
Probe-station and electronics used to characterize APDs, LEDs, and other uncooled III-Nitride devices.
| Dicing System
This K&S 7100 semi-automatic dicing system is used in the partition of wafers into smaller die.
| Life testing System |
Life testing system allows for extended logging and testing of lasers and LEDs at controlled currents, voltages, or output powers, at a constant temperature.
| Scribing Machine
Lomis scribe and break machine used to cleave wafers.
| Camera System |
Electronics head and LN2 Dewar of the SE-IR camera system used to operate FPAs and perform array characterization.
Hitachi S4500 Cold field emission scanning electron microscope (SEM) with an Oxford EDX detector for elemental analysis.
| SE-IR Camera System |
New SE-IR camera system used to operate large format and two-color FPAs with lower noise and higher frame rates.
| Wire Bonder
SUSS wire bonder used to perform gold wedge and ball bonding in order to make electrical contact to discreet devices.
| MOCVD Reactor |
This is the MOCVD reactor developed by Professor Razerghi at Thompson and brought with her to northwestern.