Center for Quantum Devices - Journal Articles and Conference Proceedings

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1.	Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacriﬁcial ZnO templates Renaud Puybaret, David J Rogers, Youssef El Gmili, Suresh Sundaram, Matthew B Jordan, Xin Li, Gilles Patriarche, Ferechteh H Teherani, Eric V Sandana, Philippe Bove, Paul L Voss, Ryan McClintock, Manijeh Razeghi, Ian Ferguson, Jean-Paul Salvestrini, and Abdallah Ougazzade Nanotechnology 28 195304-- April 29, 2017 Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or ﬂexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, ﬂexible and tunable light-emitting diodes. reprint
2.	The Molecular Beam Epitaxial Growth of InSb on (111) GaAs E. Michel, J. Kim, J. Xu, S. Javadpour, I. Ferguson, and M. Razeghi Applied Physics Letters 69 (2)-- July 8, 1996 The molecular beam epitaxial growth of InSb on (111)B GaAs has been investigated. It was found that for a given Sb/In ratio, a higher growth temperature was required for the growth of InSb on (111)B GaAs compared to that on (001) GaAs. This difference has been attributed to the bonding characteristics of the (111)B and (001) surface. Once growth had been optimized, it was found that the material characteristics of (111)B InSb were almost identical to that of (001) InSb, i.e., independent of orientation. For example, the x-ray full width at half-maximum and 300 K mobility had the same absolute values for (111) InSb and (001)InSb and followed the same dependence with the sample thickness. Te was found to be a well-behaved n-type dopant for (111)B InSb. reprint
3.	InSb Infrared Photodetectors on Si Substrates Grown by Molecular Beam Epitaxy E. Michel, J. Xu, J.D. Kim, I. Ferguson, and M. Razeghi IEEE Photonics Technology Letters 8 (5) pp. 673-- May 1, 1996 The InSb infrared photodetectors grown heteroepitaxially on Si substrates by molecular beam epitaxy (MBE) are reported. Excellent InSb material quality is obtained on 3-in Si substrates (with a GaAs predeposition) as confirmed by structural, optical, and electrical analysis. InSb infrared photodetectors on Si substrates that can operate from 77 K to room temperature have been demonstrated. The peak voltage-responsitivity at 4 μm is about 1.0×10³ V/W and the corresponding Johnson-noise-limited detectivity is calculated to be 2.8×10¹⁰ cm·Hz^½/W. This is the first important stage in developing InSb detector arrays or monolithic focal plane arrays (FPAs) on silicon. The development of this technology could provide a challenge to traditional hybrid FPA's in the future. reprint
4.	Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range E. Michel, J.D. Kim, S. Park, J. Xu, I. Ferguson, and M. Razeghi SPIE Photonics West '96 'Photodetectors: Materials and Devices'; Proceedings 2685-- January 27, 1996 In this paper, we report on the growth of InSb on (100) Si and (111)B GaAs substrates and the growth of InAsSb alloys for longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSb/InAs_1-xSb_x/InSb double heterostructures grown on (100) and (111)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities approximately 103 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x equals 0.85 showed photoresponse up to 13 micrometers at 300 K with a peak responsivity of 9.13 X 10^-2 V/W at 8 micrometers . The R₀A product of InAsSb detectors has been theoretically and experimentally analyzed. reprint
5.	High quality AlN and GaN epilayers grown on (00*1) sapphire, (100) and (111) silicon substrates P. Kung, A. Saxler, X. Zhang, D. Walker, T.C. Wang, I. Ferguson, and M. Razeghi Applied Physics Letters 66 (22)-- May 29, 1995 The growth of high quality AlN and GaN thin films on basal plane sapphire, (100), and (111) silicon substrates is reported using low pressure metalorganic chemical vapor deposition. X-ray rocking curve linewidths of about 100 and 30 arcsec were obtained for AlN and GaN on sapphire, respectively. Room‐temperature optical transmission and photoluminescence (of GaN) measurements confirmed the high quality of the films. The luminescence at 300 and 77 K of the GaN films grown on basal plane sapphire, (100), and (111) silicon was compared. reprint
6.	Molecular Beam Epitaxial Growth of High Quality InSb for p-i-n Photodetectors G. Singh, E. Michel, C. Jelen, S. Slivken, J. Xu, P. Bove, I. Ferguson, and M. Razeghi Journal of Vacuum Science and Technology B, 13 (2)-- March 1, 1995 The InSb infrared photodetectors grown heteroepitaxially on Si substrates by molecular beam epitaxy (MBE) are reported. Excellent InSb material quality is obtained on 3-inch Si substrates (with a GaAs predeposition) as confirmed by structural, optical, and electrical analysis. InSb infrared photodetectors on Si substrates that can operate from 77 K to room temperature have been demonstrated. The peak voltage-responsitivity at 4 μm is about 1.0×10³ V/W and the corresponding Johnson-noise-limited detectivity is calculated to be 2.8×10¹⁰ cm·Hz^½/W. This is the first important stage in developing InSb detector arrays or monolithic focal plane arrays (FPAs) on silicon. The development of this technology could provide a challenge to traditional hybrid FPA's in the future. reprint
7.	Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si E. Michel, R. Peters, S. Slivken, C. Jelen, P. Bove, J. Xu, I. Ferguson, and M. Razeghi Optoelectronic Integrated Circuit Materials, Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397-- February 6, 1995 High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 micrometers InSb layer grown on GaAs at a growth temperature of 395 degree(s)C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 micrometers grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of +/- 3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 micrometers up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si. reprint
8.	Molecular Beam Epitaxial Growth of High Quality InSb E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, and M. Razeghi Applied Physics Letters 65 (26)-- December 26, 1994 In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 µm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92,300 cm²·V⁻¹ at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. reprint

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