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701.  InGaAsP-based High Power Laser Diodes
M. Razeghi
-- August 1, 1995
 
702.  p-doped GaAs/Ga0.51In0.49P quantum well intersub-band photodetectors
J. Hoff, X. He, M. Erdtmann, E. Bigan, M. Razeghi, and G.J. Brown
Journal of Applied Physics 78 (3)-- August 1, 1995
Lattice‐matched p-doped GaAs–Ga0.51In0.49P quantum well intersub‐band photodetectors with three different well widths have been grown on GaAs substrates by metal‐organic chemical‐vapor deposition and fabricated into mesa structures. The photoresponse cutoff wavelength varies between 3.5 and 5.5 μm by decreasing the well width from 50 down to 25 Å. Dark current measurements as a function of temperature reveal activation energies for thermionic emission that closely correspond to measured cutoff wavelengths. Experimental results are in reasonable agreement with Kronig–Penney calculations. reprint
 
703.  Background Limited Performance in p-doped GaAs/Ga[0.71]In[0.29]As[0.39]P[0.61] Quantum Well Infrared Photodetectors
J. Hoff, S. Kim, M. Erdtmann, R. Williams, J. Piotrowski, E. Bigan, M. Razeghi and G. Brown
Applied Physics Letters 67 (1)-- July 3, 1995
Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga0.71In0.29As0.39P0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile. reprint
 
704.  Optimized structure for InGaAsP/GaAs 808nm high power lasers
H. Yi, J. Diaz, L.J. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev and M. Razeghi
Applied Physics Letters 66 (24)-- June 12, 1995
The optimized structure for the InGaAsP/GaAs quaternary material lasers (λ=0.808 μm) is investigated for the most efficient high‐power operation through an experiment and theoretical study. A comparative study is performed of threshold current density Jth and differential efficiency ηd dependence on cavity length (L) for two different laser structures with different active layer thickness (150 and 300 Å) as well as for laser structures with different multiple quantum well structures. A theoretical model with a more accurate formulation for minority leakage phenomenon provides explanation for the experimental results and sets general optimization rules for other lasers with similar restrictions on the band gap and refractive index difference between the active layer and the cladding layers. reprint
 
705.  Reliability of Aluminum-Free 808 nm High-Power Laser Diodes with Uncoated Mirrors
I. Eliashevich, J. Diaz, H. Yi, L. Wang, and M. Razeghi
Applied Physics Letters 66 (23)-- June 5, 1995
The reliability of uncoated InGaAsP/GaAs high‐power diode lasers emitting at 808 nm wavelength has been studied. 47 W of quasicontinuous wave output power (pulse width 200 μs, frequency 20 Hz) have been obtained from a 1 cm wide laser bar. A single‐stripe diode without mirror coating has been life tested at 40 °C for emitting power of 800 mW continuous wave (cw) and showed no noticeable degradation and no change of the lasing wavelength after 6000 h of operation. reprint
 
706.  High quality AlN and GaN epilayers grown on (00*1) sapphire, (100) and (111) silicon substrates
P. Kung, A. Saxler, X. Zhang, D. Walker, T.C. Wang, I. Ferguson, and M. Razeghi
Applied Physics Letters 66 (22)-- May 29, 1995
The growth of high quality AlN and GaN thin films on basal plane sapphire, (100), and (111) silicon substrates is reported using low pressure metalorganic chemical vapor deposition. X-ray rocking curve linewidths of about 100 and 30 arcsec were obtained for AlN and GaN on sapphire, respectively. Room‐temperature optical transmission and photoluminescence (of GaN) measurements confirmed the high quality of the films. The luminescence at 300 and 77 K of the GaN films grown on basal plane sapphire, (100), and (111) silicon was compared. reprint
 
707.  Photoluminescence study of GaN
X. Zhang, P. Kung, A. Saxler, D. Walker, T. Wang, and M. Razeghi
-- May 29, 1995
 
708.  High Power Aluminum-free InGaAsP/GaAs Pumping Diode Lasers
M. Razeghi, I. Eliashevich, J. Diaz, H.J. Yi, S. Kim, M. Erdtmann, D. Wu, and L.J. Wang
-- May 8, 1995
 
709.  Second harmonic generation in hexagonal silicon carbide
P.M. Lundquist, W.P. Lin, G.K. Wong, M. Razeghi, and J.B. Ketterson
Applied Physics Letters 66 (15)-- April 10, 1995
We report optical second harmonic generation measurements in single crystal α-SiC of polytype 6H. The angular dependence of second harmonic intensity was consistent with two independent nonvanishing second order susceptibility components, as expected for a crystal with hexagonal symmetry. For the fundamental wavelength of 1.064 μm the magnitudes of the two components were determined to be χzzz(2)=±1.2×10−7 and χzxx(2)=∓1.2×10−8 esu. The corresponding linear electro‐optic coefficient computed from this value is rzzz=±100 pm/V. The wavelength dependence of the nonlinear susceptibility was examined for second harmonic wavelengths between the bandgap (400 nm) and the red (700 nm), and was found to be relatively uniform over this region. The refractory nature of this compound and its large nonlinear optical coefficients make it an attractive candidate for high power nonlinear optical waveguide applications. reprint
 
710.  Molecular Beam Epitaxial Growth of High Quality InSb for p-i-n Photodetectors
G. Singh, E. Michel, C. Jelen, S. Slivken, J. Xu, P. Bove, I. Ferguson, and M. Razeghi
Journal of Vacuum Science and Technology B, 13 (2)-- March 1, 1995
The InSb infrared photodetectors grown heteroepitaxially on Si substrates by molecular beam epitaxy (MBE) are reported. Excellent InSb material quality is obtained on 3-inch Si substrates (with a GaAs predeposition) as confirmed by structural, optical, and electrical analysis. InSb infrared photodetectors on Si substrates that can operate from 77 K to room temperature have been demonstrated. The peak voltage-responsitivity at 4 μm is about 1.0×103 V/W and the corresponding Johnson-noise-limited detectivity is calculated to be 2.8×1010 cm·Hz½/W. This is the first important stage in developing InSb detector arrays or monolithic focal plane arrays (FPAs) on silicon. The development of this technology could provide a challenge to traditional hybrid FPA's in the future. reprint
 
711.  Ultraviolet Detectors for AstroPhysics Present and Future
M. Ulmer, M. Razeghi, and E. Bigan
Optoelectronic Integrated Circuit Materials, Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 239-- February 6, 1995
Astronomical instruments for the study of UV astronomy have been developed for NASA missions such as the Hubble Space Telescope. The systems that are `blind to the visible' (`solar-blind') yet sensitive to the UV that have been flown in satellites have detective efficiencies of about 10 to 20%, although typically electron bombardment charge coupled devices are higher at 30 - 40% and ordinary CCDs achieve 1 - 5%. Therefore, there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors. We provide a brief review of some aspects of UV astronomy, UV detector development, and possible technologies for the future. We suggest that a particularly promising future technology is one based on the ability of investigators to produce high quality films made of wide bandgap III-V semiconductors. reprint
 
712.  Improved performance of IR photodetectors with 3D gap engineering
J. Piotrowski and M. Razeghi
Optoelectronic Integrated Circuit Materials, Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397-- February 6, 1995
The ultimate signal-to-noise performance of the semiconductor photodetector is limited by the statistical fluctuations of the thermal generation and recombination rates in photodetector material. Cooling is an effective but impractical way of suppression of the thermal processes. The performance of uncooled detectors can be improved by minimizing the thermal generation and recombination rates and reducing the actual volume of photodetector. This can be realized in 3D heterostructure devices. In these devices, the incident radiation is absorbed in small regions of narrow gap semiconductor, buried in wide gap volume and supplied with wide gap electric contacts and radiation concentrators. The practical near room-temperature 1 - 12 μm IR heterostructure photodetectors are reported. The devices are based on variable gap Hg1-xCdxTe. The 3D heterostructures have been obtained by Isothermal Vapor Growth Epitaxy in a reusable growth system which enables in situ doping during growth with foreign impurities. Ion milling was extensively used in preparation of the devices. Monolithic optical immersion has been applied for further improvement of performance. The 3D heterostructure devices exhibit performance exceeding that of conventional photodetectors. reprint
 
713.  Investigation of 0.8 μm InGaAsP-GaAs laser diodes with Multiple Quantum Wells
J. Diaz, H. Yi, S. Kim, M. Erdtmann, L.J. Wang, I. Eliashevich, E. Bigan and M. Razeghi
Optoelectronic Integrated Circuit Materials, Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397-- February 6, 1995
In this paper, we studied the effects of the active region structure (one, two and three quantum wells with same total thickness) for high-power InGaAsP-GaAs separate confinement heterostructure lasers emitting at 0.8 μm wavelength. Experimental results for the lasers grown by low pressure metalorganic chemical vapor deposition show excellent agreement with the theoretical model. Total output power of 47 W from an uncoated 1 cm-wide laser bar was achieved in quasi-continuous wave operation reprint
 
714.  Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si
E. Michel, R. Peters, S. Slivken, C. Jelen, P. Bove, J. Xu, I. Ferguson, and M. Razeghi
Optoelectronic Integrated Circuit Materials, Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397-- February 6, 1995
High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 micrometers InSb layer grown on GaAs at a growth temperature of 395 degree(s)C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 micrometers grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of +/- 3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 micrometers up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si. reprint
 
715.  Aluminum-free Quantum Well Intersubband Photodetectors with p-type GaAs Wells and lattice-matched ternary and quaternary barriers
J. Hoff, E. Bigan, G.J. Brown, and M. Razeghi
Optoelectronic Integrated Circuit Materials, Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397-- February 6, 1995
Acceptor doped Quantum Well Intersubband Photodetectors with GaAs wells and lattice matched barriers of both ternary (In0.49Ga0.51P) and quaternary (In0.62Ga0.38As0.22P0.78) materials have been grown on semi-insulating GaAs substrates by Low Pressure Metal Organic Chemical Vapor Deposition. Mesa devices were fabricated and subjected to a series of tests to illuminate experimentally some of the detection capabilities of the lattice matched quaternary InxGa1-xAsyP1-y system with (0 ≤ x ≤ 0.52) and (0 ≤ y ≤ 1). The observed photoresponse cut-off wavelengths are in good agreement with the activation energies observed in the temperature dependence of the dark currents. Kronig-Penney calculations were used to model the intersubband transition energies. reprint
 
716.  Low pressure metalorganic chemical vapor deposition of high quality AlN and GaN thin films on sapphire and silicon substrates
P. Kung, X. Zhang, E. Bigan, and M. Razeghi
Optoelectronic Integrated Circuit Materials, Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397-- February 6, 1995
High quality AlN and GaN epilayers have been grown on basal plane sapphire by low pressure metalorganic chemical vapor deposition. The X-ray rocking curve linewidth of the AlN and GaN films were about 100 and 30 arcsecs respectively. Sharp absorption edges were determined at 6.1 and 3.4 eV respectively. Successful donor-bound excitonic luminescence emissions were detected for GaN films grown on sapphire and silicon. Two additional lines at 3.37 and 3.31 eV were observed on GaN on sapphire and assumed to be impurity-related. Doping of GaN layers was achieved with magnesium. Mg-related photoluminescence emissions were successfully detected on as-grown samples, without any post-growth treatment. reprint
 
717.  Temperature dependence of threshold current density Jth and differential efficiency of High Power InGaAsP/GaAs ( λ = 0.8 μm) lasers
H. Yi, J. Diaz, I. Eliashevich, M. Stanton, M. Erdtmann, X. He, L. Wang, and M. Razeghi
Applied Physics Letters 66 (3)-- January 16, 1995
An experimental and theoretical study on temperature dependence of the threshold current density Jth and differential efficiency ηd for the InGaAsP/GaAs laser diodes emitting at λ=0.8 μm was performed. Threshold current density Jth increases and differential efficiency ηd decreases as temperature is increased mainly because of thermal broadening of the gain spectrum. However, the measured temperature dependence of Jth and ηd could not be explained when only this effect was considered. In this letter, the temperature dependence of momentum relaxation rate ℏ/τ of carriers was investigated by performing the photoluminescence study. At high temperature, increase of the momentum relaxation rate ℏ/τ leads to reduction of the gain and mobility and increase of the optical loss, causing higher Jth and lower ηd as experimentally observed. The resulting theoretical model provides a good explanation for the mechanism of the increase of Jth and decrease of ηd. reprint
 
718.  Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells
S. Elhamri, M. Ahoujja, K. Ravindran, D.B. Mast, R.S. Newrock, W.C. Mitchel, G.J. Brown, I. Lo, M. Razeghi and X. He
Applied Physics Letters 66 (2)-- January 9, 1995
Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two‐dimensional electron gas was studied by low field Hall and Shubnikov–de Haas effects. After illumination with red light, the electron concentration increased from low 1011 cm−2 to more than 7×1011 cm−2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX-like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination. reprint
 
719.  Exploration of entire range of III-V semiconductors and their device applications
M. Razeghi, Y.H. Choi, X. He, and C.J. Sun
-- January 1, 1995
 
720.  Defects of 6H-SiC substrates made by Acheson's method and by modified Lely's method
T. Kato, H. Ohsato, M. Razeghi, and T. Okuda
-- January 1, 1995
 
721.  Analysis of Spectral Response in p-type GaAs/GaInP QWIPs
J. Hoff, C. Jelen, S. Slivken, E. Bigan, M. Razeghi, and G.J. Brown
-- January 1, 1995
 
722.  Molecular Beam Epitaxial Growth of High Quality InSb
E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, and M. Razeghi
Applied Physics Letters 65 (26)-- December 26, 1994
In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 µm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92,300 cm²·V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. reprint
 
723.  The correlation between x-ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices
X.G. He, M. Erdtmann, R. Williams, S. Kim, and M. Razeghi
Applied Physics Letters 65 (22)-- November 28, 1994
Strong correlation between x‐ray diffraction characteristics and strain distribution inside GaInP/GaAs superlattices has been reported. It is found that the symmetry of (002) diffraction patterns can be used to evaluate the interface strain status. A sample with no interfacial strains has a symmetric (002) diffraction pattern and weak (004) diffraction pattern. It is also demonstrated that strain distribution in superlattices can be readily estimated qualitatively by analyzing x-ray diffraction patterns. reprint
 
724.  A detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by metalorganic chemical vapor deposition
C. Besikci, Y.H. Choi, G. Labeyrie, E. Bigan and M. Razeghi with J.B. Cohen, J. Carsello, and V.P. Dravid
Journal of Applied Physics 76 (10)-- November 15, 1994
InAs0.3Sb0.7 layers with mirrorlike morphology have been grown on GaAs substrates by low‐pressure metalorganic chemical vapor deposition. A room‐temperature electron Hall mobility of 2×104 cm²/V· s has been obtained for a 2 μm thick layer. Low‐temperature resistivity of the layers depended on TMIn flow rate and layer thickness. Hall mobility decreased monotonically with decreasing temperature below 300 K. A 77 K conductivity profile has shown an anomalous increase in the sample conductivity with decreasing thickness except in the near vicinity of the heterointerface. In order to interpret the experimental data, the effects of different scattering mechanisms on carrier mobility have been calculated, and the influences of the lattice mismatch and surface conduction on the Hall measurements have been investigated by applying a three‐layer Hall‐effect model. Experimental and theoretical results suggest that the combined effects of the dislocations generated by the large lattice mismatch and strong surface inversion may lead to deceptive Hall measurements by reflecting typical n‐type behavior for a p‐type sample, and the measured carrier concentration may considerably be affected by the surface conduction up to near room temperature. A quantitative analysis of dislocation scattering has shown significant degradation in electron mobility for dislocation densities above 107 cm−2. The effects of dislocation scattering on hole mobility have been found to be less severe. It has also been observed that there is a critical epilayer thickness (∼1 μm) below which the surface electron mobility is limited by dislocation scattering. reprint
 
725.  Theoretical Investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers
H.J. Yi, I. Eliashevich, J. Diaz, L.J. Wang, and M. Razeghi
-- October 31, 1994
 

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