
| Degree: | PhD, Solid State |
| Dissertation: | GasMBE Growth and Characterization of Strained Layer InP-GaInAs-AlInAs Quantum Cascade Lasers |
| Publications: | search papers |
| Graduated: | June 2008 |
| Current Appointment: | MBE Growth Scientist, Teledyne Scientific and Imaging |

| Degree: | PhD, Solid State |
| Dissertation: | Dielectric Thin Films by Ion-Beam Sputtering Deposition for III-V based Infrared Optoelectronic Imaging |
| Publications: | search papers |
| Graduated: | June 2008 |
| Current Appointment: | Research Scientist, Jet Propulsion Lab (JPL) |

| Degree: | PhD, Solid State |
| Dissertation: | Modeling of Quantum Dot Infrared Photodetectors |
| Publications: | search papers |
| Graduated: | December 2007 |
| Current Appointment: | Intel Corporation, Rio Rancho, NM |

| Degree: | PhD, Solid State |
| Dissertation: | Surface Passivation and performance characteristics of type-II InAs-GaSb Superlattice infrared detectors for FPAs |
| Publications: | search papers |
| Graduated: | December 2007 |
| Current Appointment: | Teledyne Technologies, inc. |

| Degree: | PhD, Solid State |
| Dissertation: | UV Photodetectors, Focal Plane Arrays, and Avalanche Photodiodes |
| Publications: | search papers |
| Graduated: | June 2007 |
| Current Appointment: | Research Assistant Professor, Northwestern University, Evanston IL |

| Degree: | PhD, Solid State |
| Dissertation: | Quantum dot infrared photodetectors (QDIPs). |
| Publications: | search papers |
| Graduated: | June 2006 |
| Current Appointment: | Staff Scientist, Veeco Corporation, Turbodisc Division |

| Degree: | PhD, Solid State |
| Dissertation: | Ultraviolet light emitters based on Al(x)Ga(1-x)N/AlN quantum structures. |
| Publications: | search papers |
| Graduated: | June 2006 |
| Current Appointment: | Foveon, Inc., Santa Clara, CA |

| Degree: | PhD, Solid State |
| Dissertation: | Electron beam lithography for the fabrication of nanopillars in type II InAs/GaSb superlattices for multicolor infrared focal plane arrays |
| Publications: | search papers |
| Graduated: | December 2005 |
| Current Appointment: | Sandia National Laboratory, Albuquerque, NM |

| Degree: | PhD, Solid State |
| Dissertation: | Type II InAs/GaSb superlattice photodiodes and infrared focal plane arrays |
| Publications: | search papers |
| Graduated: | December 2005 |
| Current Appointment: | Post Doctoral Researcher; Northwestern University, Evanston, IL |
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| Degree: | PhD, Solid State |
| Dissertation: | Infrared focal plane array based on GaInAs/InP quantum well infrared photodetectors |
| Publications: | search papers |
| Graduated: | June 2004 |
| Current Appointment: | Micron Technology Inc. Boise, ID |

| Degree: | PhD, Solid State |
| Dissertation: | Quantum cascade lasers grown by gas-source molecular beam epitaxy |
| Publications: | search papers |
| Graduated: | June 2002 |
| Current Appointment: | Research Associate Professor; Northwestern University, Evanston, IL |

| Degree: | PhD, Solid State |
| Dissertation: | Type-II InAs/GaSb superlattices for infrared detectors |
| Publications: | search papers |
| Graduated: | June 2001 |
| Current Appointment: | Assistant Professor, Northwestern University, Evanston, IL |

| Degree: | PhD, Solid State |
| Dissertation: | GaInAs/InP quantum well infrared photodetectors on Si substrate for low-cost focal plane arrays |
| Publications: | search papers |
| Graduated: | June 2001 |
| Current Appointment: | Amberwave Systems Corporation, Salem, NH |

| Degree: | PhD, Solid State |
| Dissertation: | Low-pressure metal organic chemical vapor deposition growth of InAsSbP based materials for infrared laser applications |
| Publications: | search papers |
| Graduated: | June 2001 |
| Current Appointment: | Panduit Corporation, Orland Park, IL |

| Degree: | PhD, Solid State |
| Dissertation: | Investigation of InAsSb-based uncooled infrared photodiodes for the proximity fuze application |
| Publications: | search papers |
| Graduated: | June 2001 |
| Current Appointment: | ITT Night Vision, Roanoke, VA |

| Degree: | PhD, Solid State |
| Dissertation: | Aluminum gallium nitride ultraviolet photodetectors : device design, fabrication and characterization |
| Publications: | search papers |
| Graduated: | June 2000 |
| Current Appointment: | GE Corporate Research & Development, Schenectady, NY |

| Degree: | PhD, Solid State |
| Dissertation: | III-nitride semiconductor films and device structures grown by low pressure MOCVD |
| Publications: | search papers |
| Graduated: | June 2000 |
| Current Appointment: | Professor, Alabama University |

| Degree: | PhD, Solid State |
| Dissertation: | Exploration of Bi and Tl containing III-V materials for uncooled long-wavelength infrared photodetector applications |
| Publications: | search papers |
| Graduated: | June 2000 |
| Current Appointment: | Ajou University, SOUTH KOREA |

| Degree: | PhD, Solid State |
| Dissertation: | MOCVD growth and characterization of epitaxial quantum dots for optoelectronic devices |
| Publications: | search papers |
| Graduated: | December 1999 |
| Current Appointment: | Professor, Alabama University |

| Degree: | PhD, Solid State |
| Dissertation: | MOCVD growth and characterization of InAsSb/InAs(SbP) on InAs substrate for the mid-infrared laser applications |
| Graduated: | June 1999 |
| Current Appointment: | Sienna Technologies, Inc., Woodinville, WA |

| Degree: | PhD, Solid State |
| Dissertation: | Investigation of InAsSb material system for uncooled long-wavelength infrared photodetector applications |
| Publications: | search papers |
| Graduated: | June 1999 |
| Current Appointment: | Samsung Electronics Co., SOUTH KOREA |

| Degree: | PhD, Solid State |
| Dissertation: | Sb-based materials for infrared photodetectors : growth, characterization, fabrication, and analysis |
| Publications: | search papers |
| Graduated: | December 1998 |
| Current Appointment: | Northwestern University, Evanston, IL |

| Degree: | PhD, Solid State |
| Dissertation: | Investigation of optical properties of III-nitrides |
| Publications: | search papers |
| Graduated: | December 1998 |
| Current Appointment: | Onetta, Sunnyvale, CA |

| Degree: | PhD, Solid State |
| Dissertation: | Modeling and analysis of Al-free near- and mid-infrared semiconductor lasers |
| Graduated: | June 1998 |
| Current Appointment: | Tri-Quint Semiconductor, Inc., Breinigsville, PA |

| Degree: | PhD, Solid State |
| Dissertation: | Exploration of LP-MOCVD grown III-nitrides on various substrates |
| Publications: | search papers |
| Graduated: | June 1998 |
| Current Appointment: | Cree Research, Inc., Durham, NC |

| Degree: | PhD, Solid State |
| Dissertation: | Ga(x)In(1-x)As(y)P(1-y)-based n-type long wavelength quantum well infrared photodetectors: Growth, characterization, and fabrication |
| Publications: | search papers |
| Graduated: | June 1998 |
| Current Appointment: | Adjunct Professor, Northwestern University, Evanston Il &Northrop Grumman Corporation, Rolling Meadows, IL |

| Degree: | PhD, Solid State |
| Dissertation: | Radiative properties of high-power 808 nm aluminum-free laser diodes |
| Publications: | search papers |
| Graduated: | June 1997 |
| Current Appointment: | Emcore Corporation, Somerset, NJ |

| Degree: | PhD, Solid State |
| Dissertation: | Fabrication of high power aluminum - free 0.9 γm to 1.0 γm InGaAsP/InGaP/GaAs lasers for optical pumping |
| Publications: | search papers |
| Graduated: | June 1997 |
| Current Appointment: | Intel Corporation, Rio Rancho, NM |

| Degree: | PhD, Solid State |
| Dissertation: | Quaternary GA(1-X)IN(X)AS(Y)P(1-Y) P-type quantum well intersubband photodetectors |
| Publications: | search papers |
| Graduated: | December 1996 |
| Current Appointment: | Fermi National Laboratory, Batavia, IL |

| Degree: | PhD, Solid State |
| Dissertation: | Growth and characterization of InSb and InTISb narrow-bandgap materials for infrared detector applications. |
| Publications: | search papers |
| Graduated: | December 1995 |
| Current Appointment: | LG Electronics Institute of Technology, SOUTH KOREA |

| Degree: | PhD, Solid State |
| Dissertation: | MOCVD growth and characterization of Ga(x)In(1-x)As(y)P(1-y) on GaAs substrate for optoelectronic device applications |
| Graduated: | June 1995 |
| Current Appointment: | Sanan Electronics Co., Ltd. CHINA |

| Degree: | PhD, Solid State |
| Dissertation: | MOCVD growth and characterization of III-nitride for optoelectronic device applications |
| Publications: | search papers |
| Graduated: | December 1994 |
| Current Appointment: | Highlink Technology Corporation, TAIWAN |

| Degree: | PhD, Solid State |
| Dissertation: | Advanced modeling concepts and material considerations for III-V heterostructure electron devices on GaAs substrates |
| Publications: | search papers |
| Graduated: | June 1994 |
| Current Appointment: | Middle East Technical University, TURKEY |

| Degree: | PhD, Solid State |
| Dissertation: | nGaAsP / InP 1.3 μm double heterostructure laser grown on Si substrate by metalorganic vapor phase epitaxy |
| Publications: | search papers |
| Graduated: | June 1994 |
| Current Appointment: | Bookham Technology, San Jose, CA |
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