last updated 7/11/2017
| 1. ||Fundamentals of Solid State Engineering, 4th ed|
Springer, published 2019
The fourth edition of this class-tested, multi-disciplinary introduction to solid state engineering adds dozens of revised and updated sections and problems, as well as three new chapters on solar energy harvesting, thermal and photothermal energy harvesting, and photo-thermovoltaics. Combining concepts from physics, chemistry, electrical engineering, materials science, and mechanical engineering, Professor Razeghi describes electron-electron and electron-phonon interactions, the Kane effective mass method, the carbon atom, thermal properties of crystals, the harmonic oscillator, the hydrogen atom, the quantum mechanical description of angular momentum, and the origin of spin in a chapter devoted to quantum mechanics. This textbook features an improved transport theory description that goes beyond Drude theory, discussing the Boltzmann approach. Introducing students to the rigorous quantum mechanical way of thinking about and formulating transport processes, this fourth edition presents the basic physics concepts and thorough treatment of semiconductor characterization technology, designed for solid state engineers.
| 2. ||The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications |
Manijeh Razeghi, Leo Esaki, Klaus von Klitzing
SPIE, published 2013
When you look closely, Nature is nanotechnology at its finest. From a single cell, a factory all by itself, to complex systems, such as the nervous system or the human eye, each is composed of specialized nanostructures that exist to perform a specific function. This same beauty can be mirrored when we interact with the tiny physical world that is the realm of quantum mechanics. The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, edited by Manijeh Razeghi, Leo Esaki, and Klaus von Klitzing focuses on the application of nanotechnology to modern semiconductor optoelectronic devices. Electrons, photons, and even thermal properties can all be engineered at the nanolevel. The 2D quantum well, possibly the simplest aspect of nanotechnology, has dramatically enhanced the efficiency and versatility of electronic and optoelectronic devices. While this area alone is fascinating, nanotechnology has now progressed to 1D (quantum wire) and 0D (quantum dot) systems that exhibit remarkable and sometimes unexpected behaviors. With these components serving as the modern engineer's building blocks, it is a brave new world we live in, with endless possibilities for new technology and scientific discovery.
| 3. ||Antimony: Characteristics, Compounds and Applications|
Nove: Material Science and Technology, published 2012
his book is a collection of diverse research activities on antimony where 12 groups of prominent authors from different part of the worlds presented their latest achievement on antimony-related materials. In the past, despite being widely known and utilized by many countries and cultures, antimony's status as an alchemical substance and its high toxicity have obscured understanding of the material, resulting in controversial usage of antimony, especially in medicine. Today, knowledge about antimony compounds has tremendously increased, and the application range of antimony has become much wider. Due to the diversity of the applications of antimony, researchers may stay focused on their own field while lacking familiarity with antimony-related activities in other fields.
| 4. ||MIOMD-XI Infrared Optoelectronics: Materials and Devices|
Manijeh Razeghi, Leo Esaki, Klaus von Klitzing
Self-Published, published 2012
The 11th international conference on Infrared Optoelectronics: Materials and Devices (MIOMDāXI) at Northwestern University in Evanston, Illinois assembles the worldās top scientists, engineers and endāusers who are advancing the latest developments in infrared optoelectronics. A wealth of critical modern applications rely on new developments in optoelectronics for medical imaging, industrial failure analysis, target acquisition and tracking, thermal imaging, standoff chemicalāspecific imaging, LIDAR, and freeāspace communication. This conference will explore new topics of research and address the rising challenges facing infrared emission, detection, and systems development. This yearās highly selective program consists of a daily plenary session, invited talks, and late breaking results. The speakers are international leaders in the field who will present the stateāofātheāart in infrared devices, materials, sensors, and emitters. The newest cuttingāedge developments are highlighted as late breaking results, with the conference designed to give maximum extended exposure for inādepth discussion. All late breaking results are introduced first with a short oral presentation in the general session, and thereafter the work is exhibited as a poster for discussion in the grand hall overlooking Lake Michigan where coffee breaks and lunch will take place. Three MIOMDāXI Best Paper Awards will be presented each day to the three bestāvoted late breaking results.
| 5. ||Technology of Quantum Devices|
Springer Science, published 2010
Technology of Quantum Devices covers a wide range of topics in solid state physics, presenting an overview of areas like photonics, semiconductors and crystals. The book presents the most up-to-date developments in semiconductor physics and nano-engineering, with a particular focus on specific areas like compound semiconductors, crystal growth techniques and silicon and compound semiconductor device technology. The book uses a thorough set of sample problems, including the use of clear and detailed mathematical derivations in order to present clear, concise explanations for readers. Other important areas covered include semiconductor lasers, quantum tunneling transport, quantum well intersubband photodetectors and quantum dot photodetectors.
| 6. ||The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition |
Taylor and Francis/CRC Press, published 2010
MOCVD is a widely used technique in research and industry. The quantum-semiconductor structures grown by MOCVD will continue to be increasingly integrated into the exciting world of organic materials and biomaterials. Written by a leader in the field, this volume provides complete coverage of the MOCVD challenge. It presents a state-of-the art review of methods for producing ultra thin, accurately controlled epitaxial layers of semiconductor multilayers and microstructures deposited over a large range of substrates. The book also focuses on photonic and electronic device applications of GalnAsP-GaAs.
| 7. ||VLSI Micro- and Nanophotonics: Science, technology, and Applications|
Ed. El-Hang Lee, Louay A. Eldada, Manijeh Razeghi, and Chennupati Jagadish
CRC Press, Taylor and Francis, published 2010
There is a significant difference between VLSI (very large scale integration) micro/nanoelectronics and VLSI micro/nanophotonics. This book is about the latter, which is meant to define photonic devices, circuits and subsystems in small sizes reaching down in scale to micron, submicron, nano-scale, and quantum-scale dimensions. ćThis book examines issues concerning three essential steps in this technology: miniaturization, interconnection, and integration of microphotonic devices, circuits and systems in micron or submicron scale. It highlights the technologyās advantages with respect to size as well as its ability to offer new and unexplored functions toward new applications.
| 8. ||Fundamentals of Solid State Engineering, Third Edition|
Springer Science, published 2009
Fundamentals of Solid State Engineering, 3rd Edition, provides a multi-disciplinary introduction to solid state engineering, combining concepts from physics, chemistry, electrical engineering, materials science, and mechanical engineering. Revised throughout, this third edition includes new topics such as electron-electron and electron-phonon interactions, in addition to the Kane effective mass method. A chapter devoted to quantum mechanics has been expanded to cover topics such as the harmonic oscillator, the hydrogen atom, the quantum mechanical description of angular momentum and the origin of spin. This textbook also features an improved transport theory description, which now goes beyond Drude theory, discussing the Boltzmann approach. Introducing students to the rigorous quantum mechanical way of thinking about and formulating transport processes, this textbook presents the basic physics concepts and thorough treatment of semiconductor characterization technology, designed for solid state engineers.
| 9. ||Biosensing: Proceedings of SPIE, Volume 7035|
M. Razeghi and H. Mohseni, editors
Society of Photo-Optical Instrumentation Engineers (SPIE), published 2008
The papers included in this volume were part of the technical conference, SPIE Optics and Photonics Symposium, August 12-14, 2008 in San Diego, CA. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. The papers published in these proceedings reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance there on.
| 10. ||Fundamentals of Solid State Engineering, Second Edition|
Springer, published 2006
Fundamentals of Solid State Engineering, 2nd Edition, provides a multi-disciplinary introduction to Solid State Engineering, combining concepts from physics, chemistry, electrical engineering, materials science and mechanical engineering. Basic physics concepts are introduced, followed by a thorough treatment of the technology for solid state engineering. Topics include compound semiconductor bulk and epitaxial thin films growth techniques, current semiconductor device processing and nano-fabrication technologies. Examples of semiconductor devices and a description of their theory of operation are then discussed, including transistors, semiconductor lasers and photodetectors. Revised throughout, this second edition includes new chapters on the reciprocal lattice, optical properties of semiconductors, semiconductor heterostructures, semiconductor characterization techniques, and an introduction to lasers. Additions and improvements have been made to the material on photodetectors and quantum mechanics as well as to the problem sections.
| 11. ||III-Nitride Optoelectronic Devices|
edited M. Henini and M. Razeghi
Elsevier Science Publishers, published 2004
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promise for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
| 12. ||Fundamentals of Solid State Engineering|
Kluwer Academic Publishers, published 2002
Fundamentals of Solid State Engineering is structured in two major parts. It first addresses the basic physics concepts, which are at the base of solid state matter in general and semiconductors in particular. The second part reviews the technology for modern Solid State Engineering. This includes a review of compound semiconductor bulk and epitaxial thin films growth techniques, followed by a description of current semiconductor device processing and nano-fabrication technologies. A few examples of semiconductor devices and a description of their theory of operational are then discussed, including transistors, semiconductor lasers, and photodetectors.
| 13. ||Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT)|
M. Razeghi (Guest Editor)
Elsevier Sciences Publishers, published 2002
Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT), Singapore, July 1-6, 2001, special issue of the journal Materials Science in Semiconductor Processing
| 14. ||Handbook of Infrared Detection Technologies|
edited M. Henini and M. Razeghi (Series Editor, G. Smaldon)
Elsevier Science Publishers, published 2002
The use of lasers which emit infra-red radiation and sophisticated detectors of IR radiation is increasing dramatically: they are being used for long-distance fiber-optic communications and remote environmental monitoring and sensing. Thus they are of interest to the telecommunications industry and the military in particular. This book has been designed to bring together what is known on these devices, using an international group of contributors.
| 15. ||Long Wavelength Infrared Detectors|
M. Razeghi, Editor
Gordon and Breach Publishers, Inc., published 1996
This series focuses on electro-optical applications of advance semiconductors such as quantum wells and superlattices. Volume 1 is dedicated to the long wavelength infrared detectors based on III-V Semiconductor quantum wells and superlattices as a new generation for infrared detectors based on artificially synthesized quantum structures. The chapters are contributed by the leading researchers at some of the best industrial, academic and government laboratories in the world. Although written primarily as a reference work, this book is appropriate as a supplementary text for graduate courses in this area.
| 16. ||The MOCVD Challenge Volume II: A survey of GaAs and related compounds and of GaInP for photonic and electronic applications|
Institute of Physics Publishing, published 1995
This second volume focuses on MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Coverage begins with III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines in- and ex-situ growth techniques and the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with a discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.
| 17. ||Integrated Optics and Optoelectronics, Vol. CR45|
K.K. Wong and M. Razeghi, eds.
SPIE Optical Engineering Press, published 1993
Proceedings of a Conference held January 21-23, 1993 in Los Angeles, CA
| 18. ||Optoelectronic Materials and Device Concepts|
M. Razeghi, ed.
SPIE Optical Engineering Press, published 1991
The plenary paper in this book were delivered at SPIE'a International Conference on Physical Concepts of Materials for Novel Optoelectronics Device Applications. The invited and contributed paper form the conference are collected in SPIE Vol. 1361, which focuses on materials, growth, and Characterization, and Volt 1362, which focuses on device physics and applications.
| 19. ||The MOCVD Challenge Volume 1: A survey of GaInAsP-InP for photonic and electronic applications|
Adam Hilger Press, published 1989
The MOCVD Challenge describes how to use MOCVD to grow materials and devices, in particular indium phosphide, gallium indium arsenide and gallium indium arseno phosphide. It contains detailed descriptions of reactors, starting materials and growth conditions. It discusses lattice-matched materials, strained layers and growth on non-matched substrates such as silicon. It includes results which include the growth, characterization, application of heterojunctions, quantum wells and superlattices based on these compounds. It concludes with applications for indium phosphide semiconductors such as lasers and photodetectors and for electronic components such as optical fibres and satellite communication systems. Together with The MOCVD Challenge: Volume 2 it forms a valuable reference for users of MOCVD, and those evaluating MOCVD for use in their research. Written for physicists, materials scientists, electronics and electrical engineers involved in semiconducting materials and as-grown device research.