CQD Director, Professor Manijeh Razeghi
Head shot of Prof. Manijeh Razeghi Click to View FULL CV
 
Walter P. Murphy Professor and Director Center for Quantum Devices,
Department of Electrical Engineering and Computer Science, Northwestern University

Degrees:

Academic and Industrial Experience:

Awards and Honors:

Technical Expertise, Areas of Interest and Accomplishments:

Academic Service:

Institutional and Professional Service:

Professional Society Associations:

last updated 11/09/2016

Awarded Patents

  1. Superlattice Photodiodes with Polymide Surface Passivation, US patent number 7682865, Granted March 23, 2010
  2. InAs/GaSb infrared superlattice photodiodes doped with Beryllium, US patent number 7638791, Granted December 29, 2009
  3. Polarity inversion of type-II InAs/GaSb superlattice photodiodes, US patent number 7692183, Granted April 6, 2008
  4. Focal Plane Arrays in Type-II Superlattices, US patent number 7001794, Granted February 21, 2006
  5. Focal Plane Arrays in Type-II Superlattices, US patent number 6864552, Granted March 8, 2005
  6. Multi Color Detector, US patent number 6750075, Granted June 15, 2004
  7. III-Nitride Optoelectronic Devices, US patent number 6605485, Granted August 12, 2003
  8. High Power IR Semiconductor Laser, US patent number 6577659, Granted June 10, 2003
  9. III-V Semiconductors Separate Confinement Superlattice Optoelectronic Devices, US patent number 6570179, Granted May 27, 2003
  10. Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs), US patent number 6480520, Granted November 12, 2002
  11. Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs), US patent number 6480520, Granted November 12, 2002
  12. Diode Laser, US patent number 6461884, Granted October 8, 2002
  13. Multi Quantum Well Grinsch Detector, US patent number 6459096, Granted October 1, 2002
  14. Multi Color Detector, US patent number 6452242, Granted September 17, 2002
  15. Multi-Spectral Quantum Well Infrared Photodetectors, US patent number 6420728, Granted July 16, 2002
  16. Quantum Dots for Optoelectronic Devices, US patent number 6329668, Granted December 11, 2001
  17. Fabrication of Defect Free III-Nitride Materials, US patent number 6271104, Granted August 7, 2001
  18. Long Wavelength DH, SCH, and MQW Lasers Based on Sb, US patent number 6108360, Granted August 22, 2000
  19. Long Wavelength Infrared Photodetectors/ Growth, Characterization and Fabrication of InSbBi Long Wavelength Infrared Photodetectors, US patent number 6054706, Granted April 15, 2000
  20. III-Nitride Based Emitting Devices, US patent number 5834331, Granted November 10, 1998
  21. Method for Making III-Nitride Laser and Detection Device / III-Nitride Based Detectors, US patent number 5834331, Granted November 10, 1998
  22. III-Nitride Superlattice Structures / The Method of Increasing Acceptor Level and Decreasing Contact Resistance III-Nitride Photonic and Opto-electronic Devices, US patent number 5831277, Granted November 3, 1998
  23. Processing of Sb-based Lasers, US patent number 5807765, Granted September 15, 1998
  24. Buried-Ridge Laser Device / Emitting at 0.78 μm up to 10 μm, US patent number 5726078, Granted March 10, 1998
  25. Composition for InSb and GaAs Thin Film on Silicon Substrate for Use in Photodetectors and Method for Making InSb p-i-n Photodetector on Si Substrate Using InSb Doped 5 x 10 Buffer Layer in Order to Decrease Dark Current of PD, US patent number 5668395, Granted September 16, 1997
  26. Buried-Ridge Laser Device, US patent number 5663976, Granted September 2, 1997
  27. InAsSb/InAsSbP Diode Lasers / High Power Sb-based Laser Diodes, US patent number 5658825, Granted August 19, 1997
  28. Multiple Stacked Sb-based Heterostructures / Method of Increasing of Resistance and Voltage Sensitivity of a Photovoltaic Devices, US patent number 5650635, Granted July 22, 1997
  29. Method of Growing III-V Semiconductor Films Using a Coated Reaction Chamber, US patent number 5599732, Granted February 4, 1997
  30. Semiconductor Films, US patent number 5462008, Granted October 31, 1995
  31. Intermetallic Compound Semiconductor Thin Film and Method of Manufacturing Same, US patent number 5421910, Granted June 6, 1995
  32. New Semiconductor Materials for (FIR) Far Infrared Photodetector and Laser Emitting Between 2 μm up to 9 μm, US patent number 5410178, Granted April 25, 1995
  33. Aluminum Free 650 nm to 1100 nm High Power Lasers grown on GaAs, InP and Si Substrates, US patent number 5389396, Granted February 14, 1995
  34. LW-SCAW-LD Large Waveguide Separate Confinement Quantum Well Laser Diodes for High Power Laser, US patent number 5384151, Granted January 24, 1995

Pending Patents

  1. Monolithical Widely Tunable Quantum Cascade Laser Devices
  2. Aluminum-free 980 nm Laser Pump
  3. Fabrication of Type II InAs/GaSb Superlattice Focal Plane Arrays
  4. High Power Mid Wavelength Infrared Laser
  5. Ohmic Contacts for Semiconductor Devices
  6. 1.35 μm GaInAsP/InP Laser on Silicon Substrate Grown by Low Pressure MOCVD
  7. Thermal Stability of GaN Thin Films Grown by MOCVD on (0001) Si 6H-SiC and (0112) Sapphire Substrates
  8. Comparison of the Physical Properties of GaN Thin Films Deposited on (0001) and (0112) Sapphire Substrates
  9. SLOW (Semiconductor Laser Organic Waveguide) Device for Generating Blue Light (with Dr. Tobin Marks, NU Chemistry)
  10. Wavelength Engineering of the InTlSb-InSb Photoconductor Under Annealing in H2-N2 Atmosphere
  11. Aluminum Free GaInAsP Quantum Well Intersubband Photodetectors
  12. Technology of Heatsink for GaAs-GaInAsP-GaInP High Power Lasers
  13. Technology of GaInAsP-GaInP-GaAs High Power Laser Emitting at 808 nm
  14. Selective Epitaxy for Quantum Devices
  15. Al-free Sb-based Lasers Emitting at 2-5 μm at Room Temperature
  16. InSbBi Materials for Far-infrared Detectors and Focal Plane Arrays
  17. Semiconductor Substrate Preparation for Epitaxial Growth of Optoelectronic Devices
  18. Technology of Far Infrared Lasers - Room Temperature Al-free DH and SCH Lasers
  19. Quantum Dots Infrared Photodetector Material and Structure
  20. Oxide-confined aluminum-free vertical cavity surface emitting lasers (VCSELs)
  21. InAsSb Two-Color Detector Technology
  22. High Power Infrared Lasers
  23. High Power Infrared Semiconductor Laser
  24. Heterogeneous Integration of Optoelectronic Devices
  25. Dry Etching Method of Sb-based Compound Semiconductor for Optoelectronic Devices
  26. Ohmic Contact to P-AlGaN for Optoelectronic and Electronic Devices

Books

1.  
Cover of Book by Prof. Manijeh Razeghi
The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications
Manijeh Razeghi, Leo Esaki, Klaus von Klitzing
SPIE, published 2013
When you look closely, Nature is nanotechnology at its finest. From a single cell, a factory all by itself, to complex systems, such as the nervous system or the human eye, each is composed of specialized nanostructures that exist to perform a specific function. This same beauty can be mirrored when we interact with the tiny physical world that is the realm of quantum mechanics. The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, edited by Manijeh Razeghi, Leo Esaki, and Klaus von Klitzing focuses on the application of nanotechnology to modern semiconductor optoelectronic devices. Electrons, photons, and even thermal properties can all be engineered at the nanolevel. The 2D quantum well, possibly the simplest aspect of nanotechnology, has dramatically enhanced the efficiency and versatility of electronic and optoelectronic devices. While this area alone is fascinating, nanotechnology has now progressed to 1D (quantum wire) and 0D (quantum dot) systems that exhibit remarkable and sometimes unexpected behaviors. With these components serving as the modern engineer's building blocks, it is a brave new world we live in, with endless possibilities for new technology and scientific discovery.
[http://spie.org/x648.xml?product_id=2022876]
 
2.  
Cover of Book by Prof. Manijeh Razeghi
Antimony: Characteristics, Compounds and Applications
Manijeh Razeghi
Nove: Material Science and Technology, published 2012
his book is a collection of diverse research activities on antimony where 12 groups of prominent authors from different part of the worlds presented their latest achievement on antimony-related materials. In the past, despite being widely known and utilized by many countries and cultures, antimony's status as an alchemical substance and its high toxicity have obscured understanding of the material, resulting in controversial usage of antimony, especially in medicine. Today, knowledge about antimony compounds has tremendously increased, and the application range of antimony has become much wider. Due to the diversity of the applications of antimony, researchers may stay focused on their own field while lacking familiarity with antimony-related activities in other fields.
[https://www.novapublishers.com/catalog/product_info.php?products_id=29197]
 
3.  
Cover of Book by Prof. Manijeh Razeghi
MIOMD-XI Infrared Optoelectronics: Materials and Devices
Manijeh Razeghi, Leo Esaki, Klaus von Klitzing
Self-Published, published 2012
The 11th international conference on Infrared Optoelectronics: Materials and Devices (MIOMD‐XI) at Northwestern University in Evanston, Illinois assembles the world’s top scientists, engineers and end‐users who are advancing the latest developments in infrared optoelectronics. A wealth of critical modern applications rely on new developments in optoelectronics for medical imaging, industrial failure analysis, target acquisition and tracking, thermal imaging, standoff chemical‐specific imaging, LIDAR, and free‐space communication. This conference will explore new topics of research and address the rising challenges facing infrared emission, detection, and systems development. This year’s highly selective program consists of a daily plenary session, invited talks, and late breaking results. The speakers are international leaders in the field who will present the state‐of‐the‐art in infrared devices, materials, sensors, and emitters. The newest cutting‐edge developments are highlighted as late breaking results, with the conference designed to give maximum extended exposure for in‐depth discussion. All late breaking results are introduced first with a short oral presentation in the general session, and thereafter the work is exhibited as a poster for discussion in the grand hall overlooking Lake Michigan where coffee breaks and lunch will take place. Three MIOMD‐XI Best Paper Awards will be presented each day to the three best‐voted late breaking results.
[http://miomd-11.northwestern.edu/files/files/Booklet/Proceedings%20Volume%20(As%20Printed).pdf]
 
4.  
Cover of Book by Prof. Manijeh Razeghi
Technology of Quantum Devices
M. Razeghi
Springer Science, published 2010
Technology of Quantum Devices covers a wide range of topics in solid state physics, presenting an overview of areas like photonics, semiconductors and crystals. The book presents the most up-to-date developments in semiconductor physics and nano-engineering, with a particular focus on specific areas like compound semiconductors, crystal growth techniques and silicon and compound semiconductor device technology. The book uses a thorough set of sample problems, including the use of clear and detailed mathematical derivations in order to present clear, concise explanations for readers. Other important areas covered include semiconductor lasers, quantum tunneling transport, quantum well intersubband photodetectors and quantum dot photodetectors.
[http://www.amazon.com/Technology-Quantum-Devices-Manijeh-Razeghi/dp/1441910557/]
 
5.  
Cover of Book by Prof. Manijeh Razeghi
The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition
M. Razeghi
Taylor and Francis/CRC Press, published 2010
MOCVD is a widely used technique in research and industry. The quantum-semiconductor structures grown by MOCVD will continue to be increasingly integrated into the exciting world of organic materials and biomaterials. Written by a leader in the field, this volume provides complete coverage of the MOCVD challenge. It presents a state-of-the art review of methods for producing ultra thin, accurately controlled epitaxial layers of semiconductor multilayers and microstructures deposited over a large range of substrates. The book also focuses on photonic and electronic device applications of GalnAsP-GaAs.
[http://www.amazon.com/gp/product/1439806985/]
 
6.  
Cover of Book by Prof. Manijeh Razeghi
VLSI Micro- and Nanophotonics: Science, technology, and Applications
Ed. El-Hang Lee, Louay A. Eldada, Manijeh Razeghi, and Chennupati Jagadish
CRC Press, Taylor and Francis, published 2010
There is a significant difference between VLSI (very large scale integration) micro/nanoelectronics and VLSI micro/nanophotonics. This book is about the latter, which is meant to define photonic devices, circuits and subsystems in small sizes reaching down in scale to micron, submicron, nano-scale, and quantum-scale dimensions.  This book examines issues concerning three essential steps in this technology: miniaturization, interconnection, and integration of microphotonic devices, circuits and systems in micron or submicron scale. It highlights the technology’s advantages with respect to size as well as its ability to offer new and unexplored functions toward new applications.
[http://www.amazon.com/VLSI-Micro-Nanophotonics-Technology-Applications/dp/1574447297]
 
7.  
Cover of Book by Prof. Manijeh Razeghi
Fundamentals of Solid State Engineering, Third Edition
Manijeh Razeghi
Springer Science, published 2009
Fundamentals of Solid State Engineering, 3rd Edition, provides a multi-disciplinary introduction to solid state engineering, combining concepts from physics, chemistry, electrical engineering, materials science, and mechanical engineering. Revised throughout, this third edition includes new topics such as electron-electron and electron-phonon interactions, in addition to the Kane effective mass method. A chapter devoted to quantum mechanics has been expanded to cover topics such as the harmonic oscillator, the hydrogen atom, the quantum mechanical description of angular momentum and the origin of spin. This textbook also features an improved transport theory description, which now goes beyond Drude theory, discussing the Boltzmann approach. Introducing students to the rigorous quantum mechanical way of thinking about and formulating transport processes, this textbook presents the basic physics concepts and thorough treatment of semiconductor characterization technology, designed for solid state engineers.
[http://www.amazon.com/dp/0387921672/]
 
8.  
Cover of Book by Prof. Manijeh Razeghi
Biosensing: Proceedings of SPIE, Volume 7035
M. Razeghi and H. Mohseni, editors
Society of Photo-Optical Instrumentation Engineers (SPIE), published 2008
The papers included in this volume were part of the technical conference, SPIE Optics and Photonics Symposium, August 12-14, 2008 in San Diego, CA. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. The papers published in these proceedings reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance there on.
[http://spie.org/x648.xml?product_id=780591&origin_id=x4318&event_id=840121]
 
9.  
Cover of Book by Prof. Manijeh Razeghi
Fundamentals of Solid State Engineering, Second Edition
Manijeh Razeghi
Springer, published 2006
Fundamentals of Solid State Engineering, 2nd Edition, provides a multi-disciplinary introduction to Solid State Engineering, combining concepts from physics, chemistry, electrical engineering, materials science and mechanical engineering. Basic physics concepts are introduced, followed by a thorough treatment of the technology for solid state engineering. Topics include compound semiconductor bulk and epitaxial thin films growth techniques, current semiconductor device processing and nano-fabrication technologies. Examples of semiconductor devices and a description of their theory of operation are then discussed, including transistors, semiconductor lasers and photodetectors. Revised throughout, this second edition includes new chapters on the reciprocal lattice, optical properties of semiconductors, semiconductor heterostructures, semiconductor characterization techniques, and an introduction to lasers. Additions and improvements have been made to the material on photodetectors and quantum mechanics as well as to the problem sections.
[http://www.amazon.com/exec/obidos/ASIN/0387281525/102-3225544-1966505]
 
10.  
Cover of Book by Prof. Manijeh Razeghi
III-Nitride Optoelectronic Devices
edited M. Henini and M. Razeghi
Elsevier Science Publishers, published 2004
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promise for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
[http://www.amazon.com/exec/obidos/ASIN/0080444261/102-1383064-9721744]
 
11.  
Cover of Book by Prof. Manijeh Razeghi
Fundamentals of Solid State Engineering
M. Razeghi
Kluwer Academic Publishers, published 2002
Fundamentals of Solid State Engineering is structured in two major parts. It first addresses the basic physics concepts, which are at the base of solid state matter in general and semiconductors in particular. The second part reviews the technology for modern Solid State Engineering. This includes a review of compound semiconductor bulk and epitaxial thin films growth techniques, followed by a description of current semiconductor device processing and nano-fabrication technologies. A few examples of semiconductor devices and a description of their theory of operational are then discussed, including transistors, semiconductor lasers, and photodetectors.
[http://www.amazon.com/exec/obidos/ASIN/0792376293/102-7555673-7707346]
 
12.  
Cover of Book by Prof. Manijeh Razeghi
Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT)
M. Razeghi (Guest Editor)
Elsevier Sciences Publishers, published 2002
Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT), Singapore, July 1-6, 2001, special issue of the journal Materials Science in Semiconductor Processing
 
13.  
Cover of Book by Prof. Manijeh Razeghi
Handbook of Infrared Detection Technologies
edited M. Henini and M. Razeghi (Series Editor, G. Smaldon)
Elsevier Science Publishers, published 2002
The use of lasers which emit infra-red radiation and sophisticated detectors of IR radiation is increasing dramatically: they are being used for long-distance fiber-optic communications and remote environmental monitoring and sensing. Thus they are of interest to the telecommunications industry and the military in particular. This book has been designed to bring together what is known on these devices, using an international group of contributors.
[http://www.amazon.com/exec/obidos/ASIN/1856173887/102-7555673-7707346]
 
14.  
Cover of Book by Prof. Manijeh Razeghi
Long Wavelength Infrared Detectors
M. Razeghi, Editor
Gordon and Breach Publishers, Inc., published 1996
This series focuses on electro-optical applications of advance semiconductors such as quantum wells and superlattices. Volume 1 is dedicated to the long wavelength infrared detectors based on III-V Semiconductor quantum wells and superlattices as a new generation for infrared detectors based on artificially synthesized quantum structures. The chapters are contributed by the leading researchers at some of the best industrial, academic and government laboratories in the world. Although written primarily as a reference work, this book is appropriate as a supplementary text for graduate courses in this area.
[http://www.amazon.com/exec/obidos/ASIN/2884492089/102-7555673-7707346]
 
15.  
Cover of Book by Prof. Manijeh Razeghi
The MOCVD Challenge Volume II: A survey of GaAs and related compounds and of GaInP for photonic and electronic applications
M. Razeghi
Institute of Physics Publishing, published 1995
This second volume focuses on MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Coverage begins with III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines in- and ex-situ growth techniques and the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with a discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.
[http://www.amazon.com/exec/obidos/ASIN/0750303093/102-7555673-7707346]
 
16.  
Cover of Book by Prof. Manijeh Razeghi
Integrated Optics and Optoelectronics, Vol. CR45
K.K. Wong and M. Razeghi, eds.
SPIE Optical Engineering Press, published 1993
Proceedings of a Conference held January 21-23, 1993 in Los Angeles, CA
[http://www.amazon.com/exec/obidos/ASIN/0819410055/102-7555673-7707346]
 
17.  
Cover of Book by Prof. Manijeh Razeghi
Optoelectronic Materials and Device Concepts
M. Razeghi, ed.
SPIE Optical Engineering Press, published 1991
The plenary paper in this book were delivered at SPIE'a International Conference on Physical Concepts of Materials for Novel Optoelectronics Device Applications. The invited and contributed paper form the conference are collected in SPIE Vol. 1361, which focuses on materials, growth, and Characterization, and Volt 1362, which focuses on device physics and applications.
[http://www.amazon.com/exec/obidos/ASIN/0819405302/102-7555673-7707346]
 
18.  
Cover of Book by Prof. Manijeh Razeghi
The MOCVD Challenge Volume 1: A survey of GaInAsP-InP for photonic and electronic applications
M. Razeghi
Adam Hilger Press, published 1989
The MOCVD Challenge describes how to use MOCVD to grow materials and devices, in particular indium phosphide, gallium indium arsenide and gallium indium arseno phosphide. It contains detailed descriptions of reactors, starting materials and growth conditions. It discusses lattice-matched materials, strained layers and growth on non-matched substrates such as silicon. It includes results which include the growth, characterization, application of heterojunctions, quantum wells and superlattices based on these compounds. It concludes with applications for indium phosphide semiconductors such as lasers and photodetectors and for electronic components such as optical fibres and satellite communication systems. Together with The MOCVD Challenge: Volume 2 it forms a valuable reference for users of MOCVD, and those evaluating MOCVD for use in their research. Written for physicists, materials scientists, electronics and electrical engineers involved in semiconducting materials and as-grown device research.
[http://www.amazon.com/exec/obidos/ASIN/0852741618/102-7555673-7707346]
 

Book Chapters

  1. "Quantum Dots"Stanley Tsao and Manijeh Razeghi   -   Chapter 6 (p. 169-219) in Photonics Volume 2: Nanophotonic Structures and Materials, David L. Andrews, John Wiley & Sons, Inc., published 2015[http://www.wiley.com/WileyCDA/WileyTitle/productCd-1118225511,subjectCd-EE13.html]
  2. "Recent Advances in IR Laser Diodes with High Power, High WPE, Single Mode, CW Operation at RT"Manijeh Razeghi , Neelanjan Bandyopadhyay , Quanyong Lu , Yanbo Bai , Steven Slivken , and David Heydari   -   Chapter 17, (p. 123-128) in Terahetz and Mid Infrared Radiation: Detection of Explosives and CBRN (Using Terahertz), Mauro F. Pereira and Oleksiy Shulika, NATO Science for Peace and Security Series-B Physics and Biophysics (Springer), published 2014[http://www.amazon.com/Terahertz-Mid-Infrared-Radiation-Explosives/dp/940178583X]
  3. "High Power, Narrow-Linewidth, and Compact Terahertz Sources for Room Temperature Applications"Manijeh Razeghi, Quanyong Lu, Neelanjan Bandyopadhyay, Steven Slivken, and Yanbo Bai   -   Chapter 4 (p. 75-89) in THz and Security Applications: Detectors, Sources and Associated Electronics for THz Applications, Carlo Corsi and Fedir Sizov, NATO Science for Peace and Security Series-B Physics and Biophysics (Springer), published 2014[http://www.amazon.com/THz-Security-Applications-Associated-Electronics/dp/9401788308/ref=sr_1_11?s=books&ie=UTF8&qid=1401371029&sr=1-11&keywords=NATO+Science+for+Peace+and+Security+Series+B%3A+Physics+and+Biophysics]
  4. "Type II Antimonide-Based Superlattices: A One-Dimensional Bulk Semiconductor"Manijeh Razeghi and Binh-Minh Nguyen   -   Chapter 19 in One-Dimensional Nanostructures: Principles and Applications, Tianyou Zhai and Jiannian Yao, John Wiley & Sons, Inc., Hoboken, NJ, USA., published 2013[http://dx.doi.org/10.1002/9781118310342.ch19]
  5. "Type-II Antimonide-based Superlattice Photon Detectors and Focal Plane Arrays"M. Razeghi and B.M. Nguyen   -   Chapter 5, (p. 93-124) in Antimony: Characteristics, Compounds and Applications, edited by M. Razeghi, November Science Publishers, Inc., published 2012[https://www.novapublishers.com/catalog/product_info.php?products_id=29197]
  6. "III-Nitrides-Based Biosensing"M. Razeghi and R. McClintock   -   Chapter 28, (p. 609-632) in Integreated Microsystems: Electronics, Photonics, and Biotechnology, edited by K. Iniewski, CRC Press, published 2011[http://www.crcpress.com/product/isbn/9781439836200]
  7. "The Infrared Physics of Quantum Dots"M. Razeghi and B. Movaghar   -   Chapter 12 (p. 12-1 to 12-25) in VLSI Micro- and Nanophotonics: Science, Technology, and Applications , El-Hang Lee, Louay Eldada, Manijeh Razeghi, and Chennupati Jagadish, Taylor & Francis Group LLC, published 2010[http://www.crcpress.com/product/isbn/9781574447293]
  8. "Type II InAs/GaSb Superlattice Photon Detectors and Focal Plane Arrays"M. Razeghi, B-M Nguyen, and P-Y Delaunay   -   Chapter 24 (p. 24-1 to 24-32) in VLSI Micro- and Nanophotonics: Science, Technology, and Applications , El-Hang Lee, Louay Eldada, Manijeh Razeghi, and Chennupati Jagadish, Taylor & Francis Group, LLC, published 2010[http://www.crcpress.com/product/isbn/9781574447293]
  9. "III-Nitride Nanotechnology"M. Razeghi and R. McClintock   -   Chapter 13 (p. 13-1 to 13-18) in VLSI Micro- and Nanophotonics: Science, Technology, and Applications , El-Hang Lee, Louay Eldada, Manijeh Razeghi, and Chennupati Jagadish, Taylor & Francis Group, LLC, published 2010[http://www.crcpress.com/product/isbn/9781574447293]
  10. "Quantum Dot Infrared Photodetectors by Metal-Organic Chemical Vapor Deposition"M. Razeghi, W. Zhang, H. Lim, and S. Tsao   -   Chapter 21, p. 620-658 in Handbook of Self Assembled Semiconductor Nanostructures Novel Devices in Photonics and Electronics, M. Henini, Elsevier Limited, published 2008[http://www.elsevier.com/wps/product/cws_home/714710]
  11. "High-Power High Temperature Semiconductor Lasers for lambda ~ 9.6 micron"M. Razeghi   -   p. 103-111 in Semiconductor Science and Technology, Volume 1: Frontiers in Science and Technology, edited by V. Stefan and N.G. Basov, Stefan University Press, published 2006[http://www.amazon.com/Semiconductor-Science-Technology-University-Frontiers/dp/1889545112]
  12. "Atomic Engineering in Type-II InAs/GaSb for Multicolor Infrared Camera"Y. Wei, A. Gin and M. Razeghi   -   Chapter 11 (p. 447-495) in Handbook of Semiconductor Nanostructures and Nanodevices, edited K.L. Wand and A.A. Balandin, American Scientific Publishers, published 2005[http://www.amazon.com/Handbook-Semiconductor-Nanostructures-Nanodevices-Nanotechnology/dp/158883073X]
  13. "Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors"Y. Wei, A. Gin and M. Razeghi   -   p. 515-545 in Mid-Infrared Optoelectronics, edited A. Krier, Springer-Verlag London Publishers, published 2005[http://www.springerlink.com/content/a3838727j5337760/]
  14. "Antimony Based Materials for Electro-Optics"W. Zhang and M. Razeghi   -   Chapter 7 (p. 229-288) in Semiconductor Nanostructures for Optoelectronic Applications, edited T. Steiner, published 2004[http://www.amazon.com/Semiconductor-Nanostructures-Optoelectronic-Applications-Materials/dp/1580537510]
  15. "Review of Crystal, Thin Film and Nanostructure Growth Technologies"A. Yasan and M. Razeghi   -   Chapter 2 (p. 5-43) in Semiconductor Nanostructures for Optoelectronic Applications, edited T. Steiner, published 2004[http://www.amazon.com/Semiconductor-Nanostructures-Optoelectronic-Applications-Materials/dp/1580537510]
  16. "III-Nitride UV Photodetectors"R. McClintock and M. Razeghi   -   Chapter 10 (p. 251-284) in III-Nitride Optoelectronic Devices, edited M. Henini and M. Razeghi, Elsevier Ltd. Publishers, published 2004[http://www.amazon.com/exec/obidos/ASIN/0080444261/102-1383064-9721744]
  17. "III-Nitride Ultraviolet Light Emitting Sources"A. Yasan and M. Razeghi   -   Chapter 9 (p.213-249) in III-Nitride Optoelectronic Devices, edited M. Henini and M. Razeghi, Elsevier Ltd. Publishers, published 2004[http://www.amazon.com/exec/obidos/ASIN/0080444261/102-1383064-9721744]
  18. "Introduction"M. Razeghi and M. Henini   -   Chapter 1 (p. 1-8) in III-Nitride Optoelectronic Devices, edited M. Razeghi and M. Henini, Elsevier Ltd. Publishers, published 2004[http://www.amazon.com/exec/obidos/ASIN/0080444261/102-1383064-9721744]
  19. "Preface"M. Razeghi and M. Henini   -   (p. v - vi) in III-Nitride Optoelectronic Devices, edited M. Razeghi and M. Henini, Elsevier Ltd. Publishers, published 2004[http://www.amazon.com/exec/obidos/ASIN/0080444261/102-1383064-9721744]
  20. "Infrared Detectors Based on InAs/GaSb Superlattices"M. Razeghi, Y. Wei, and G.J. Brown   -   (p. 263-272) in Future Trends in Microelectronics: The Nano Millennium, A. Zaslavsky, Editor, Wiley Publishing, published 2002[http://www.wiley.com/WileyCDA/WileyTitle/productCd-0471212474.html]
  21. "GaInAs(P) Based QWIPs on GaAs, InP, and Si Substrates for Focal Plane Arrays"Chapter 4 (p. 122-158) in Handbook of Infrared Detection Technologies, edited M. Henini and M. Razeghi (Series Editor, G. Smaldon), Elsevier Science Publishers, published 2002[http://www.amazon.com/Handbook-Infra-red-Detection-Technologies-Henini/dp/1856173887]
  22. "GaSb/InAs Superlattices for Infra Red FPAs"Chapter 6 (p. 191-232) in Handbook of Infrared Detection Technologies, edited M. Henini and M. Razeghi (Series Editor, G. Smaldon), Elsevier Science Publishers, published 2002[http://www.amazon.com/Handbook-Infra-red-Detection-Technologies-Henini/dp/1856173887]
  23. "Advances in Quantum Dot Structures"S. Kim and M. Razeghi   -   chapter 5 (p. 199-213) in Semiconductor and Semimetals (73), Semiconductor and Semimetals (73), Academic Press, published 2001[http://www.amazon.com/Semiconductors-Semimetals-73-Vol-37/dp/0127521828]
  24. "Recent Advances in Quantum Dot Optoelectronic Devices and Future Trends"S. Kim and M. Razeghi   -   Chapter 3 (p. 133-153) in Handbook of Advanced Electronic and Photonic Materials and Devices - Volume 2: Semiconductor Devices, H.S. Nalwa, Editor, Academic Press Publishers, published 2000[http://www.amazon.com/Handbook-Advanced-Electronic-Photonic-Materials/dp/0125137451]
  25. "Photoresistors"M. Razeghi and A. Rogalski   -   p. 377-387 in Encyclopedia of Electrical and Electronics Engineering, John G. Webster, Editor, John Wiley and Sons, Inc., published 2000[http://www.amazon.com/Wiley-Encyclopedia-Electrical-Electronics-Engineering/dp/0471139467]
  26. "21st Century: The Final Frontier for III-Nitrides Materials and Devices"M. Razeghi   -   chapter (p. 381-395) in Future Trends in Microelectronics: The Road Ahead, S. Luryi, J. Xu and A. Zaslavsky, Editors, John Wiley and Sons, Inc., published 1999[http://www.amazon.com/Future-Trends-Microelectronics-Road-Ahead/dp/0471321834]
  27. "GaN Based Laser Diodes"chapter (p. 1007-1080) in International Journal of High Speed Electronics and Systems, (Vol. 9, No. 4), Michael Stroscio and Mitra Dutta, Editors, World Scientific Publishers, Inc., published 1998[http://dx.doi.org/10.1142/S0129156498000415]
  28. "Novel InTlSb Infrared Detectors"chapter 8 in Long Wavelength Infrared Detectors, M. Razeghi, Editor, Gordon and Breach Publishers, Inc., published 1996[http://www.amazon.com/Wavelength-Optoelectronic-Properties-Semiconductors-Superlattices/dp/2884492097 ]
  29. "Growth and Characterization of GaInP/GaAs System for Quantum Well Infrared Photodetector Applications"chapter 2 in Long Wavelength Infrared Detectors, M. Razeghi, Editor, Gordon and Breach Publishers, Inc., published 1996[http://www.amazon.com/Wavelength-Optoelectronic-Properties-Semiconductors-Superlattices/dp/2884492097 ]
  30. "Chemical Vapor Deposition of Semiconductor Materials"(p. 517-531) in ASM Handbook, Volume 5, Surface Engineering, ASM International, Materials Park, OH, published 1994[http://www.amazon.com/ASM-Handbook-Surface-Engineering-Asm/dp/087170384X/]
  31. "MOCVD Technology and its Applications"chapter 3, (p. 183-274) in Handbook on Semiconductors, Second Edition, Volume 3A: Materials, Properties and Preparations, S.. Mahajan, Volume Editor, Elsevier Science Publishers, published 1994[http://www.amazon.com/Handbook-Semiconductors-Materials-Properties-Preparation/dp/0444852743/]

Journal Publications

  1. Q. Y. Lu, S. Manna, S. Slivken, D. H. Wu, and M. Razeghi, "Dispersion compensated mid-infrared quantum cascade laser frequency comb with high power output," AIP Publishing (April 26, 2017) [http://aip.scitation.org/doi/pdf/10.1063/1.4982673].
  2. Ilkay Demir, Yoann Robin, Ryan McClintock, Sezai Elagoz, Konstantinos Zekentes, and Manijeh Razeghi, "Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy," Phys. Status Solidi (April 4, 2017) [http://dx.doi.org/10.1002/pssa.201770120].
  3. Vinod E. Sandana, David J. Rogers, Ferechteh H. Teheran1, Philippe Bove, Ryan McClintock and Manijeh Razeghi, "Imprinting of Nanoporosity in Lithium-Doped Nickel Oxide through the use of Sacrificial Zinc Oxide Nanotemplates," Proc. SPIE 10105 Oxide-based Materials and Devices VIII, 101052C (April 3, 2017) [http://dx.doi.org/10.1117/12.2263713].
  4. F. H. Teherani ; D. J. Rogers ; V. E. Sandana ; P. Bove ; C. Ton-That ; L. L. C. Lem ; E. Chikoidze ; M. Neumann-Spallart ; Y. Dumont ; T. Huynh ; M. R. Phillips ; P. Chapon ; R. McClintock ; M. Razeghi , "Investigations on the substrate dependence of the properties in nominally-undoped β-Ga2O3 thin films grown by PLD ," Proc. SPIE 10105 Oxide-based Materials and Devices VIII, 101051R (March 23, 2017) (March 23, 2017) [http://dx.doi.org/10.1117/12.2262757 ].
  5. D. H. Wu and M. Razeghi, "High power, low divergent, substrate emitting quantum cascade ring laser in continuous wave operation ," APL Materials 5 035505 (2017) (March 21, 2017) [http://dx.doi.org/10.1063/1.4978810 ].
  6. Gre´gory Barbillon, Vinod E. Sandana,Christophe Humbert, Benoit Be´lier, David J. Rogers, Ferechteh H. Teherani, Philippe Bove Ryan McClintock and Manijeh Razeghid, "Study of Au coated ZnO nanoarrays for surface enhanced Raman scattering chemical sensing," Cite this: J. Mater. Chem. C 2017, 5, 3528 (March 20, 2017) [http://dx.doi.org/10.1039/c7tc00098g ].
  7. A. Haddadi, R. Chevallier, A. Dehzangi, and M. Razeghi, "Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier ," Applied Physics Letters 110 101104 (2017) (March 8, 2017) [http://dx.doi.org/10.1063/1.4978378].
  8. Quanyong Lu, Donghai Wu, Steven Slivken & Manijeh Razeghi, "High efficiency quantum cascade laser frequency comb," Scientific Reports 7 Article number: 43806 (March 6, 2017) [http://dx.doi.org/10.1038/srep43806].
  9. Abbas Haddadi, Arash Dehzangi, Sourav Adhikary, Romain Chevallier, and Manijeh Razeghi, "Background–limited long wavelength infrared InAs/InAsSb type-II superlattice-based photodetectors operating at 110 K," APL Materials 5 035502 (2016) (February 13, 2017) [http://dx.doi.org/10.1063/1.4975619].
  10. M. Razeghi, "A lifetime of contributions to the world of semiconductors using the Czochralski invention," Vacuum (2017) (February 8, 2017) [http://dx.doi.org/10.1016/j.vacuum.2017.01.009].
  11. Arash Dehzangi, Abbas Haddadi, Sourav Adhikary, and Manijeh Razeghi, "Impact of scaling base thickness on the performance of heterojunction phototransistors," Nanotechnology 28 10LT01 (2017) (February 2, 2017) [https://doi.org/10.1088/1361-6528/aa5849].
  12. MANIJEH RAZEGHI, QUANYONG LU, SANTANU MANNA, DONGHAI WU AND STEVEN SLIVKEN, NORTHWESTERN UNIVERSITY, "Breakthroughs Bring THz Spectroscopy, Sensing Closer to Mainstream," www.photonics.com (December 1, 2016).
  13. Manijeh Razeghi, Wenjia Zhou, Donghai Wu, Ryan McClintock, and Steven Slivken, Northwestern University, "Quntum Cascade Laser Breakthrough for Advanced Remote Detection," www.photonics.com (November 1, 2016).
  14. Ilkay Demir, Yoann Robin, Ryan McClintock, Sezai Elagoz, Konstantinos Zekentes, and Manijeh Razeghi, "Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy," Phys. Status Solidi A 1–6 (2016) (September 30, 2016) [http://dx.doi.org/10.1002/pssa.201600363].
  15. Akhil Rajan, David J Rogers, Cuong Ton-That, Liangchen Zhu, Matthew R Phillips, Suresh Sundaram, Simon Gautier, Tarik Moudakir, Youssef El-Gmili, Abdallah Ougazzaden, Vinod E Sandana, Ferechteh H Teherani, Philippe Bove, Kevin A Prior, Zakaria Djebbour, Ryan McClintock and Manijeh Razeghi, "Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer," Journal of Physics D: Applied Physics Volume 49, Number 31 (July 15, 2016) [http://dx.doi.org/10.1088/0022-3727/49/31/315105].
  16. A. Haddadi, S. Adhikary, A. Dehzangi, and M. Razeghi, "Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices," Applied Physics Letters 109 021107 (2016) (July 12, 2016) [http://dx.doi.org/10.1063/1.4958715].
  17. Quanyong Lu and Manijeh Razeghi, "Recent Advances in Room Temperature, High-Power Terahertz Quantum Cascade Laser Sources Based on Difference-Frequency Generation," Photonics 2016 3, 42 (July 7, 2016) [http://www.mdpi.com/2304-6732/3/3/42].
  18. Steven Slivken and Manijeh Razeghi , "Engineering Multi-Section Quantum Cascade Lasers for Broadband Tuning," Photonics 3 41 (2016) (June 27, 2016) [http://www.mdpi.com/2304-6732/3/3/41].
  19. Wenjia Zhou, Neelanjan Bandyopadhyay, Donghai Wu, Ryan McClintock & Manijeh Razeghi, "Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design," Nature Scientific Reports 6 Article number: 25213 (June 8, 2016) [http://dx.doi.org/10.1038/srep25213].
  20. M. Razeghi, A. Haddadi, X. V. Suo, S. Adhikary, P. Dianat, R. Chevallier, A. M. Hoang, A. Dehzangi, "High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices," Proc. SPIE 9819 Infrared Technology and Applications XLII, 98190A (May 20, 2016) [http://dx.doi.org/10.1117/12.2228611].
  21. M. Razeghi, A. Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, A. Dehzangi, "InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection," Proc. SPIE 9819 Infrared Technology and Applications XLII, 981909 (May 20, 2016) [http://dx.doi.org/10.1117/12.2228306].
  22. Anh Minh Hoang, Arash Dehzangi, Sourav Adhikary, & Manijeh Razeghi, "High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices," Nature Scientific Reports 6 Article number: 24144 (2016) (April 7, 2016) [http://www.nature.com/articles/srep24144].
  23. Quanyong Lu, Donghai Wu, Saumya Sengupta, Steven Slivken, Manijeh Razeghi, "Room temperature continuous wave, monolithic tunable THz sources based on highly efficient mid-infrared quantum cascade lasers," Nature Scientific Reports 6 Article number: 23595 (2016) (March 24, 2016) [http://dx.doi.org/10.1038/srep23595].
  24. S. Slivken, S. Sengupta, and M. Razeghi, "High power continuous operation of a widely tunable quantum cascade laser with an integrated amplifier," Applied Physics Letters 107 251101 (2015); (December 21, 2015) [http://dx.doi.org/10.1063/1.4938005].
  25. K. Pantzas, D.J. Rogers, P. Bove, V.E. Sandana, F.H. Teherani, Y. El Gmili, M. Molinari, G. Patriarche, L. Largeau, O. Mauguin, S. Suresh, P.L. Voss, M. Razeghi, A. Ougazzaden, "Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO," Journal of Crystal Growth (November 7, 2015) [http://dx.doi.org/10.1016/j.jcrysgro.2015.11.007].
  26. A. Haddadi, X.V. Suo, S. Adhikary, P. Dianat, R. Chevallier, A.M. Hoang, and M. Razeghi, "High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices," Applied Physics Letters 107 141104 (2015) (October 5, 2015) [http://dx.doi.org/10.1063/1.4932518].
  27. Ryan McClintock ; Manijeh Razeghi, "Growth of AlGaN on silicon substrates: a novel way to make back-illuminated ultraviolet photodetectors," Proc. SPIE 9555 Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550U (August 28, 2015) [http://dx.doi.org/10.1117/12.2195388].
  28. Ryan McClintock ; Manijeh Razeghi, "Ultraviolet avalanche photodiodes," Proc. SPIE 9555 Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550B (August 28, 2015) [http://dx.doi.org/10.1117/12.2195387].
  29. R. McClintock, M. Razeghi, "Solar-blind photodetectors and focal plane arrays based on AlGaN," Proc. SPIE 9555 Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 955502 (August 25, 2015) [http://dx.doi.org/10.1117/12.2195390].
  30. N. Bandyopadhyay, M. Chen, S. Sengupta, S. Slivken, and M. Razeghi, "Ultra-broadband quantum cascade laser, tunable over 760 cm−1, with balanced gain," Opt. Express 23 21159-21164 (August 10, 2015) [http://dx.doi.org/10.1364/OE.23.021159].
  31. Manijeh Razeghi, Abbas Haddadi, Guanxi Chen, Romain Chevallier and Ahn Minh Hoang, "InAs/InAs1-XSbx Type-II Superlattices for High-Performance Long-Wavelength Infrared Medical Thermography," ECS Trans. 2015 66(7): 109-116 (June 1, 2015) [http://dx.doi.org/10.1149/06607.0109ecst].
  32. D.J. Rogers, V.E. Sandana, S. Gautier, T. Moudakir, M. Abid, A. Ougazzaden, F. Hosseini Teherani, P. Bove, M. Molinari, M. Troyon, M. Peres, Manuel J. Soares, A.J. Neves, T. Monteiro, D. McGrouther, J.N. Chapman, H.-J. Drouhin, R. McClintock, M. Razeghi, "Core-shell GaN-ZnO Moth-eye Nanostructure Arrays Grown on a-SiO2/Si (111) as a basis for Improved InGaN-based Photovoltaics and LEDs," Photonics and Nanostructures - Fundamentals and Applications (2015) (March 30, 2015) [http://dx.doi.org/10.1016/j.photonics.2015.03.003].
  33. M. Razeghi, Q. Y. Lu, N. Bandyopadhyay, W. Zhou, D. Heydari, Y. Bai, and S. Slivken, "Quantum cascade lasers: from tool to product," Optics Express Vol. 23 Issue 7, pp. 8462-8475 (March 25, 2015) [http://dx.doi.org/10.1364/OE.23.008462].
  34. D. J. Rogers, S. Sundaram, Y. El Gmili, F. Hosseini Teherani, P. Bove, V. Sandana, P. L. Voss, A. Ougazzaden, A. Rajan, K.A. Prior, R. McClintock, & M. Razeghi, "Scale-up of the Chemical Lift-off of (In)GaN-based p-i-n Junctions from Sapphire Substrates Using Sacrificial ZnO Template Layers," Proc. SPIE 9364 Oxide-based Materials and Devices VI, 936424 (March 24, 2015) [http://dx.doi.org/10.1117/12.2175897].
  35. V. E. Sandana, D. J. Rogers, F. Hosseini Teherani, P. Bove, N. Ben Sedrine, M. R. Correia, T. Monteiro, R. McClintock, and M. Razeghi, "Structural, Optical, Electrical and Morphological Study of Transparent p-NiO/n-ZnO Heterojunctions Grown by PLD," Proc. SPIE 9364 Oxide-based Materials and Devices VI, 93641O (March 24, 2015) (March 24, 2015) [http://dx.doi.org/10.1117/12.2177427].
  36. D. Heydari, Y. Bai, N. Bandyopadhyay, S. Slivken, and M. Razeghi, "High brightness angled cavity quantum cascade lasers," Applied Physics Letters 106 091105 (2015) (March 6, 2015) [http://dx.doi.org/10.1063/1.4914477].
  37. C. Bayram, J. Ott, K. T. Shiu, C. W. Cheng, Y. Zhu, J. Kim, D. K. Sadana, M. Razeghi, "Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)," Proc. SPIE 9370 Quantum Sensing and Nanophotonic Devices XII, 93702F (February 8, 2015); (February 8, 2015) [http://dx.doi.org/10.1117/12.2082894].
  38. Q. Y. Lu, M. Razeghi, S. Slivken, N. Bandyopadhyay, Y. Bai, W. J. Zhou, M. Chen, D. Heydari, A. Haddadi, R. McClintock, M. Amanti, and C. Sirtori, "High power frequency comb based on mid-infrared quantum cascade laser at λ ~9μm," Appl. Phys. Lett. 106 051105 (2015) (February 2, 2015) [ http://dx.doi.org/10.1063/1.4907646].
  39. A. Haddadi, R. Chevallier, G. Chen, A. M. Hoang, and M. Razeghi, "Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices," Applied Physics Letters 106 011104 (2015) (January 8, 2015) [ http://dx.doi.org/10.1063/1.4905565].
  40. Guanxi Chen, Abbas Haddadi, Anh-Minh Hoang, Romain Chevallier, and Manijeh Razeghi, "Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application," Optics Letters Vol. 40 Iss. 1, pp. 29–32 (2015) (December 18, 2014) [http://dx.doi.org/10.1364/OL.40.000045].
  41. Q. Y. Lu, S. Slivken, N. Bandyopadhyay, Y. Bai, and M. Razeghi, "Widely tunable room temperature semiconductor terahertz source ," Appl. Phys. Lett. 105 201102 (2014) (November 17, 2014) [ http://dx.doi.org/10.1063/1.4902245].
  42. A. Haddadi , G. Chen , R. Chevallier , A. M. Hoang , and M. Razeghi, "InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection," Appl. Phys. Lett. 105 121104 (2014) (September 22, 2014) [http://dx.doi.org/10.1063/1.4896271].
  43. N. Bandyopadhyay, Y. Bai, S. Slivken, and M. Razeghi, "High power operation of λ ∼ 5.2–11 μm strain balanced quantum cascade lasers based on the same material composition ," Appl. Phys. Lett. 105 071106 (2014) (August 20, 2014) [http://dx.doi.org/10.1063/1.4893746].
  44. Manijeh Razeghi and Binh-Minh Nguyen, "Advances in mid-infrared detection and imaging: a key issues review ," Rep. Prog. Phys. 77 (2014) 082401 (August 4, 2014) [http://iopscience.iop.org/0034-4885/77/8/082401].
  45. Erdem Cicek, Ryan McClintock, Abbas Haddadi, William A. Gaviria Rojas, and Manijeh Razeghi, "High Performance Solar-Blind Ultraviolet Focal Plane Arrays Based on AlGaN," IEEE Journal of Quantum Electronics Vol. 50, Issue 8, p 591-595 (August 1, 2014) [http://dx.doi.org/10.1109/JQE.2014.2328434 ].
  46. M. Razeghi, A. Haddadi, A.M. Hoang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, P.R. Bijjam, and R. McClintock, "Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems," Journal of ELECTRONIC MATERIALS Vol. 43, No. 8, 2014 (August 1, 2014) [http://dx.doi.org/10.1007/s11664-014-3080-y].
  47. Q. Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "Monolithic terahertz source," Nature Photonics | Research Highlights (July 31, 2014) [http://dx.doi.org/10.1038/nphoton.2014.185].
  48. A. M. Hoang, G. Chen, R. Chevallier, A. Haddadi, and M. Razeghi, "High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection," Appl. Phys. Lett. 104 251105 (2014) (June 23, 2014) [http://dx.doi.org/10.1063/1.4884947].
  49. Q. Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai, and M. Razeghi, "Continuous operation of a monolithic semiconductor terahertz source at room temperature," Appl. Phys. Lett. 104 221105 (2014) (June 3, 2014) [http://dx.doi.org/10.1063/1.4881182].
  50. M. Razeghi, "Superlattice-based quantum devices: from theory to practical applications," Waves in Random and Complex Media (April 23, 2014) [http://dx.doi.org/10.1080/17455030.2014.899724].
  51. A. Rajan, S. Sundaram, Y. El Gmili, P. L. Voss, K. Pantzas, T. Moudakir, A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, V. E. Sandana, P. Bove, K. Prior, R. McClintock & M. Razeghi, "Novel Method for Reclaim/Reuse of Bulk GaN Substrates using Sacrifical ZnO Release Layers," Proc. SPIE 8987 Oxide-based Materials and Devices V, 898719 (April 2, 2014) [http://dx.doi.org/10.1117/12.2043704].
  52. Bayram, C., Ott, J. A., Shiu, K.-T., Cheng, C.-W., Zhu, Y., Kim, J., Razeghi, M. and Sadana, D. K. , "Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy," Adv. Funct. Mater. 2014 (April 1, 2014) [http://dx.doi.org/10.1002/adfm.201304062].
  53. G. Chen , A. M. Hoang , and M. Razeghi, "Evaluating the size-dependent quantum efficiency loss in a SiO2-Y2O3 hybrid gated type-II InAs/GaSb long-infrared photodetector array," Applied Physics Letters 104 103509 (2014) (March 14, 2014) [ http://dx.doi.org/10.1063/1.4868486].
  54. V. E. Sandana ; D. J. Rogers ; F. Hosseini Teherani ; P. Bove ; R. McClintock ; M. Razeghi , "Nickel oxide growth on Si (111), c-Al2O3 and FTO/glass by pulsed laser deposition," 03/07/2014 (March 7, 2014) [http://dx.doi.org/10.1117/12.2057620].
  55. F. Callewaert, A.M. Hoang, and M. Razeghi, "Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice," Applied Physics Letters 104, 053508 (2014) (February 6, 2014) [http://dx.doi.org/10.1063/1.4864403].
  56. Vinod E. Sandana; David. J. Rogers; Ferechteh Hosseini Teherani; Philippe Bove; Manijeh Razeghi, "Investigation of the factors influencing nanostructure array growth by PLD towards reproducible wafer-scale growth," physica status solidi (a) Applications and Materials Science. Volume 211 Issue 2, pages 449–454, (February 2014) (January 14, 2014) [http://dx.doi.org/10.1002/pssa.201300497].
  57. S. Slivken, N. Bandyopadhyay, Y. Bai, Q. Y. Lu, and M. Razeghi, "Extended electrical tuning of quantum cascade lasers with digital concatenated gratings," Appl. Phys. Lett. 103 231110 (2013) (December 6, 2013) [http://dx.doi.org/10.1063/1.4841635].
  58. G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, S. R. Darvish, and M. Razeghi, "Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array," Appl. Phys. Lett. 103 223501 (2013) (November 25, 2013) [http://dx.doi.org/10.1063/1.4833026].
  59. M. Razeghi; Q.Y. Lu; N. Bandyopadhyay; S. Slivken; Y. Bai, "Room temperature compact THz sources based on quantum cascade laser technology," Proc. SPIE 8846 Terahertz Emitters, Receivers, and Applications IV, 884602 (September 24, 2013) (November 24, 2013) [http://dx.doi.org/10.1117/12.2027979].
  60. E. Cicek, R. McClintock, C. Y. Cho, B. Rahnema, and M. Razeghi, "AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89% ," Appl. Phys. Lett. 103 191108 (2013) (November 5, 2013) [http://dx.doi.org/10.1063/1.4829065].
  61. Manijeh Razeghi; Neelanjan Bandyopadhyay; Yanbo Bai; Quanyong Lu; Steven Slivken, "Recent advances in mid infrared (3-5 μm) quantum cascade lasers," Optical Materials Express Vol. 3, Issue 11, pp. 1872-1884 (2013) (November 2, 2013) [http://dx.doi.org/10.1364/OME.3.001872].
  62. E. Cicek, R. McClintock, C. Y. Cho, B. Rahnema, and M. Razeghi, "AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate," Appl. Phys. Lett. 103 181113 (2013) (October 30, 2013) [http://dx.doi.org/10.1063/1.4828497].
  63. David J. Rogers; Philippe Bove; Eric V. Sandana; Ferechteh Hosseini Teherani; Ryan McClintock; Manijeh Razeghi, "SOLID-STATE DEEP UV EMITTERS/DETECTORS: Zinc oxide moves further into the ultraviolet," Laser Focus World. 2013;49(10):33-36. (October 10, 2013) [http://www.laserfocusworld.com/articles/print/volume-49/issue-10/features/solid-state-deep-uv-emitters-detectors-zinc-oxide-moves-further-into-the-ultraviolet.html].
  64. Chuanle Zhou, I. Vurgaftman, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, J. R. Meyer, A. Hoang, A. Haddadi, M. Razeghi, and M. Grayson, "Thermal conductivity tensors of the cladding and active layers of antimonide infrared lasers and detectors," Optical Materials Express. 2013;3(10):1632-1640. (October 1, 2013) [http://dx.doi.org/10.1364/OME.3.001632].
  65. Vinod E. Sandana, David J. Rogers, Ferechteh Hosseini Teherani, Philippe Bove, Michael Molinari, Michel Troyon, Alain Largeteau, Gérard Demazeau, Colin Scott, Gaelle Orsal, Henri-Jean Drouhin, Abdallah Ougazzaden, Manijeh Razeghi, "Growth of “moth-eye” ZnO nanostructures on Si(111), c-Al2O3, ZnO and steel substrates by pulsed laser deposition," Phys. Status Solidi C. 1-5 (2013) (August 6, 2013) [http://dx.doi.org/10.1002/pssc.201200975].
  66. G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, P. R. Bijjam, B.-M. Nguyen, and M. Razeghi, "Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement ," Applied Physics Letters 103 033512 (2013) (July 17, 2013) [http://link.aip.org/link/doi/10.1063/1.4813479].
  67. Q. Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai, and M. Razeghi , "Room temperature terahertz quantum cascade laser sources with 215 μW output power through epilayer-down mounting ," Appl. Phys. Lett. 103 011101 (2013) (July 1, 2013) [http://link.aip.org/link/doi/10.1063/1.4812814].
  68. M. Razeghi, A. Haddadi, A.M. Hoang, E.K. Huang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, R. McClintock, "Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices," Infrared Physics & Technology Volume 59, Pages 41-52 (2013) (July 1, 2013) [http://dx.doi.org/10.1016/j.infrared.2012.12.008].
  69. M. Razeghi; A.M. Hoang; A. Haddadi; G. Chen; S. Ramezani-Darvish; P. Bijjam; P. Wijewarnasuriy; E. Decuir, "High-performance bias-selectable dual-band Short-/Mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices," Proc. SPIE 8704 Infrared Technology and Applications XXXIX, 87041W (June 18, 2013) (June 18, 2013) [http://dx.doi.org/10.1117/12.2019145].
  70. M. Razeghi; A. Haddadi; A.M. Hoang; G. Chen; S. Ramezani-Darvish; P. Bijjam, "High-performance bias-selectable dual-band mid-/long-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb Type-II superlattices," Proc. SPIE 8704 Infrared Technology and Applications XXXIX, 87040S (June 11, 2013) (June 11, 2013) [http://dx.doi.org/10.1117/12.2019147].
  71. Yufei Ma; Rafał Lewicki; Manijeh Razeghi; Xin Yu; Frank K. Tittel, "Sensitive detection of CO and N2O using a high power CW 4.61 μm dfb-QCL based QEPAS sensor," CLEO: Science and Innovations CLEO_SI 2013. 2013:JW2A.80 (June 9, 2013) [http://dx.doi.org/10.1364/CLEO_AT.2013.JW2A.80].
  72. Chu-Young Cho, Yinjun Zhang, Erdem Cicek, Benjamin Rahnema, Yanbo Bai, Ryan McClintock, and Manijeh Razeghi , "Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111) ," Appl. Phys. Lett. 102 211110 (2013) (May 31, 2013) [http://dx.doi.org/10.1063/1.4809521].
  73. S. Gautier, T. Moudakir, G. Patriarche, D.J. Rogers, V.E. Sandana, F. Hosseini Teherani, P. Bove, Y. El Gmili, K. Pantzas, Suresh Sundaram, D. Troadec, P.L. Voss, M. Razeghi, A. Ougazzaden, "Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire," Journal of Crystal Growth Volume 370, Pages 63-67 (2013) (May 1, 2013) [http://dx.doi.org/10.1016/j.jcrysgro.2012.08.048].
  74. C. Bayram ; K. T. Shiu ; Y. Zhu ; C. W. Cheng ; D. K. Sadana ; F. H. Teherani ; D. J. Rogers ; V. E. Sandana ; P. Bove ; Y. Zhang ; S. Gautier ; C.-Y. Cho ; E. Cicek ; Z. Vashaei ; R. McClintock ; M. Razeghi, "Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices," Proc. SPIE 8626 Oxide-based Materials and Devices IV, 86260L (March 18, 2013) (March 18, 2013) [http://dx.doi.org/10.1117/12.2009999].
  75. Sandana, V. E.; Rogers, D. J.; Teherani, F. Hosseini; Bove, P.; Razeghi, M., "Graphene versus oxides for transparent electrode applications," Proc. SPIE 8626 Oxide-based Materials and Devices IV, 862603 (March 18, 2013) (March 18, 2013) [http://dx.doi.org/10.1117/12.2012865].
  76. D. J. Rogers ; F. Hosseini Teherani ; P. Bove ; A. Lusson ; M. Razeghi , "Investigation of MgZnO/ZnO heterostructures grown on c-sapphire substrates by pulsed laser deposition," Proc. SPIE 8626 Oxide-based Materials and Devices IV, 86261X (March 18, 2013) (March 18, 2013) [http://dx.doi.org/10.1117/12.2013601].
  77. D. J. Rogers ; P. Bove ; F. Hosseini Teherani ; K. Pantzas ; T. Moudakir ; G. Orsal ; G. Patriarche ; S. Gautier ; A. Ougazzaden ; V. E. Sandana ; R. McClintock ; M. Razeghi , "Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates," Proc. SPIE 8626 Oxide-based Materials and Devices IV, 862611 (March 18, 2013) (March 18, 2013) [http://dx.doi.org/10.1117/12.2010046].
  78. Rogers, D. J.; Carroll, C.; Bove, P.; Sandana, V. E.; Goubert, L.; Largeteau, A.; Teherani, F. Hosseini; Demazeau, G.; McClintock, R.; Drouhin, H.-J.; Razeghi, M., "Energy harvesting from millimetric ZnO single wire piezo-generators," Oxide-based Materials and Devices III. Edited by Teherani Ferechteh H.; Look, David C.; Rogers, David J. Proceedings of the SPIE, Volume 8263, article id. 82631X, 7 pp. (2012). (February 9, 2013) [http://dx.doi.org/10.1117/12.927621].
  79. A.M. Hoang, G. Chen, A. Haddadi and M. Razeghi, "High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices," SPIE Proceedings Vol. 8631, p. 86311K-1, Photonics West, San Francisco, CA (February 5, 2013) [http://dx.doi.org/10.1117/12.2019103].
  80. E. Cicek, R. McClintock, Z. Vashaei, Y. Zhang, S. Gautier, C.Y. Cho and M. Razeghi, "Crack-free AlGaN for solar-blind focal plane arrays through reduced area expitaxy," Applied Physics Letters Vol. 102, No. 05, p. 051102-1 (February 4, 2013) [http://link.aip.org/link/?APL/102/051102].
  81. C. Bayram, K.T. Shiu, Y. Zhu, C.W. Cheng, D.K. Sadana, Z. Vashaei, E. Cicek, R. McClintock and M. Razeghi, "Gallium nitride on silicon for consumer & scalable photonics," SPIE Proceedings Vol. 8631, p. 863112-1, Photonics West, San Francisco, CA (February 4, 2013) [http://dx.doi.org/10.1117/12.2008788].
  82. Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "Widely tuned room temperature terahertz quantum cascade laser sources," SPIE Proceedings Vol. 8631, p. 863108-1, Photonics West, San Francisco, CA (February 3, 2013) [http://dx.doi.org/10.1117/12.2019101].
  83. S. Slivken, N. Bandyopadhyay, S. Tsao, S. Nida, Y. Bai, Q.Y. Lu and M. Razeghi, "Dual section quantum cascade lasers with wide electrical tuning," SPIE Proceedings Vol. 8631, p. 86310P-1, Photonics West, San Francisco, CA (February 3, 2013) [http://dx.doi.org/10.1117/12.2008506].
  84. N. Bandyopadhyay, Y. Bai, S. Tsao, S. Nida, S. Slivken and M. Razeghi, "Continuous wave, room temperature operation of λ ~ 3μm quantum cascade laser," SPIE Proceedings Vol. 8631, p. 86310M-1, Photonics West, San Francisco, CA (February 3, 2013) [http://dx.doi.org/10.1117/12.2019105].
  85. Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "High performance terahertz quantum cascade laser sources based on intracavity difference frequency generation ," Optics Express Vol. 21, No. 1, p. 968 (January 14, 2013) [http://dx.doi.org/10.1364/OE.21.000968].
  86. Y. Ma, R. Lewicki, M. Razeghi and F. Tittel, "QEPAS based ppb-level detection of CO and N2O using a high power CW DFB-QCL," Optics Express Vol. 21, No. 1, p. 1008 (January 14, 2013) [http://dx.doi.org/10.1364/OE.21.001008].
  87. A.M. Hoang, G. Chen, A. Haddadi and M. Razeghi, "Demonstration of high performance bias-slectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices," Applied Physics Letters Vol. 102, No. 1, p. 011108-1 (January 7, 2013) [http://link.aip.org/link/?APL/102/011108].
  88. Y. Zhang, S. Gautier, C. Cho, E. Cicek, Z, Vashaei, R. McClintock, C. Bayram, Y. Bai and M. Razeghi, "Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)," Applied Physics Letters Vol. 102, No. 1, p. 011106-1 (January 7, 2013) [http://link.aip.org/link/?APL/102/011106].
  89. E.K. Huang, A. Haddadi, G. Chen, A.M. Hoang, and M. Razeghi, "Active and passive infrared imager based on short-wave and mid-wave type-II superlattice dual-band detectors," Optics Letters Vol. 38, no. 1, p. 22-24 (January 1, 2013) [http://dx.doi.org/10.1364/OL.38.000022].
  90. Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "Widely tuned room temperature terahertz quantum cascade laser sources based on difference-frequency generation," Applied Physics Letters Vol. 101, No. 25, p. 251121-1 (December 17, 2012) [http://link.aip.org/link/?APL/101/251121].
  91. N. Bandyopadhyay, Y. Bai, S. Tsao, S. Nida, S. Slivken and M. Razeghi, "Room temperature continuous wave operation of λ ~ 3-3.2 μm quantum cascade lasers," Applied Physics Letters Vol. 101, No. 24, p. 241110-1 (December 10, 2012) [http://link.aip.org/link/?APL/101/241110].
  92. G. Chen, E.K. Huang, A.M. Hoang, S. Bogdanov, S.R. Darvish, and M. Razeghi, "Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors," Applied Physics Letters Vol. 101, No. 21, p. 213501-1 (November 19, 2012) [http://link.aip.org/link/?APL/101/213501].
  93. E.K. Huang, M.A. Hoang, G. Chen, S.R. Darvish, A. Haddadi, and M. Razeghi, "Highly selective two-color mid-wave and long-wave infrared detector hybrid based on Type-II superlattices," Optics Letters Vol. 37, No. 22, p. 4744-4746 (November 15, 2012) [http://dx.doi.org/10.1364/OL.37.004744].
  94. Y. Bai, S. Slivken, Q.Y. Lu, N. Bandyopadhyay, and M. Razeghi, "Angled cavity broad area quantum cascade lasers," Applied Physics Letters Vol. 100, Np. 8, p. 081106-1 (August 20, 2012) [http://link.aip.org/link/?APL/101/081106].
  95. M.P. Ulmer, E. Cicek, R. McClintock, Z. Vashaei and M. Razeghi, "Temperature dependence of the dark current and activation energy at avalanche onset of GaN Avalanche Photodiodes," SPIE Proceedings Vol. 8460, p. 84601G-1 (August 15, 2012) [http://dx.doi.org/10.1117/12.929138].
  96. C. Zhou, B.M. Nguyen, M. Razeghi and M. Grayson, "Thermal Conductivity of InAs/GaSb Type II Superlattice," Journal of Electronic Materials Vol. 41, No. 9, p. 2322-2325 (August 1, 2012) [http://dx.doi.org/10.1007/s11664-012-2146-y].
  97. S. Slivken, N. Bandyopadhyay, S. Tsao, S. Nida, Y. Bai, Q.Y. Lu and M. Razeghi, "Sampled grating, distributed feedback quantum cascade lasers with broad tunability and continuous operation at room temperature," Applied Physics Letters Vol. 100, No. 26, p. 261112-1 (June 25, 2012) [http://link.aip.org/link/?APL/100/261112].
  98. J. Hubbs, V. Nathan, M. Tidrow, and M. Razeghi, "Radiometric characterization of long-wavelength infrared type II strained layer superlattice focal plane array under low-photon irradiance conditions," Optical Engineering Vol. 51, No. 6, p. 064002-1 (June 15, 2012) [http://dx.doi.org/10.1117/1.OE.51.6.064002].
  99. E.K. Huang, S. Abdollahi Pour, M.A. Hoang, A. Haddadi, M. Razeghi and M.Z. Tidrow, "Low irradiance background limited type-II superlattice MWIR M-barrier imager," OSA Optics Letters (OL) Vol. 37, No. 11, p. 2025-2027 (June 1, 2012) [http://dx.doi.org/10.1364/OL.37.002025].
  100. N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "High power, continuous wave, room temperature operation of λ ~ 3.4 μm and λ ~ 3.55 μm InP-based quantum cascade lasers," Applied Physics Letters Vol. 100, No. 21, p. 212104-1 (May 21, 2012) [http://link.aip.org/link/?APL/100/212104].
  101. A.M. Hoang, G. Chen, A. Haddadi, S. Abdollahi Pour, and M. Razeghi, "Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices," Applied Physics Letters Vol. 100, No. 21, p. 211101-1 (May 21, 2012) [http://link.aip.org/link/?APL/100/211101].
  102. E. Cicek, Z. Vashaei, E.K. Huang, R. McClintock and M. Razeghi, "AlGaN-based deep-ultraviolet 320 x 256 focal plane array," OSA Optics Letters Vol. 37, No. 5, p. 896-898 (March 1, 2012) [http://dx.doi.org/10.1364/OL.37.000896].
  103. A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi, "High operability 1024 x 1024 long wavelength Type-II superlattice focal plane array," IEEE Journal of Quantum Electronics (JQE) Vol. 48, No. 2, p. 221-228 (February 10, 2012) [http://dx.doi.org/10.1109/JQE.2011.2175903].
  104. M. Razeghi, "Superlattice sees colder objects in two colors and high resolution," SPIE Newsroom (February 10, 2012) [http://spie.org/x85456.xml].
  105. Rogers, D. J.; Ougazzaden, A.; Sandana, V. E.; Moudakir, T.; Ahaitouf, A.; Teherani, F. Hosseini; Gautier, S.; Goubert, L.; Davidson, I. A.; Prior, K. A.; McClintock, R. P.; Bove, P.; Drouhin, H.-J.; Razeghi, M., "Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire," Proc. SPIE 8263 Oxide-based Materials and Devices III, 82630R (February 9, 2012) (February 9, 2012) [http://dx.doi.org/10.1117/12.916013].
  106. Harinipriya, S.; Usmani, B.; Rogers, D. J.; Sandana, V. E.; Teherani, F. Hosseini; Lusson, A.; Bove, P.; Drouhin, H.-J.; Razeghi, M., "ZnO nanorod electrodes for hydrogen evolution and storage," Proc. SPIE 8263 Oxide-based Materials and Devices III, 82631Y (February 9, 2012) (February 9, 2012) [http://dx.doi.org/10.1117/12.927622].
  107. Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken, Q.Y. Lu, and M. Razeghi, "Substrate emission quantum cascade ring lasers with room temperature continuous wave operation," SPIE Proceedings Vol. 8268, p. 82680N (January 22, 2012) [http://dx.doi.org/10.1117/12.913655].
  108. A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi, "Low frequency noise in 1024 x 1024 long wavelength infrared focal plane array base on Type-II InAs/GaSb superlattice," SPIE Proceedings Vol. 8268, p. 82680X (January 22, 2012) [http://dx.doi.org/10.1117/12.913983].
  109. E.K. Huang and M. Razeghi, "World's first demonstration of type-II superlattice dual band 640 x 512 LWIR focal plane array," SPIE Proceedings Vol. 8268, p. 82680Z (January 22, 2012) [http://dx.doi.org/10.1117/12.913662].
  110. R. McClintock, A. Haddadi and M. Razeghi, "Free-space optical communication using mid-infrared or solar-blind ultraviolet sources and detectors," SPIE Proceedings Vol. 8268, p. 826810 (January 22, 2012) [http://dx.doi.org/10.1117/12.913980].
  111. G. Chen, B.M. Nguyen, A.M. Hoang, E.K. Huang, S.R. Darvish and M. Razeghi, "Suppresion of surface leakage in gate controlled Type-II InAs/GaSb mid-Infrared photodetectors," SPIE Proceedings Vol. 8268, p. 826811 (January 22, 2012) [http://dx.doi.org/10.1117/12.913741].
  112. C. Bayram, D.K. Sadana, Z. Vashaei and M. Razeghi, "Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance," SPIE Proceedings Vol. 8268, p. 826827 (January 22, 2012) [http://dx.doi.org/10.1117/12.913740].
  113. G. Chen; B.-M. Nguyen; A.M. Hoang; E.K. Huang; S.R. Darvish; M. Razeghi, "Suppression of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors," Proc. SPIE 8268 Quantum Sensing and Nanophotonic Devices IX, 826811 (January 20, 2012) (January 20, 2012) [http://dx.doi.org/10.1117/12.913741].
  114. A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi, "High operability 1024 x 1024 long wavelength infrared focal plane array base on Type-II InAs/GaSb superlattice," AIP Conference Proceedings Vol. 1416, p. 56-58_NGS15 Conf_Blacksburg, VA_Aug 1-5, 2011 (December 31, 2011) [http://dx.doi.org/10.1063/1.3671697].
  115. Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken, Q.Y. Lu, D. Caffey, M. Pushkarsky, T. Day and M. Razeghi, "High power, continuous wave, quantum cascade ring laser," Applied Physics Letters Vol. 99, No. 26, p. 261104-1 (December 26, 2011) [http://link.aip.org/link/?APL/99/261104].
  116. M. Razeghi, "Stable single mode terahertz semiconductor sources at room temperature," 2011 International Semiconductor Device Research Symposium ISDRS [6135180] (2011). (December 7, 2011) [http://dx.doi.org/10.1109/ISDRS.2011.6135180].
  117. Manijeh Razeghi, "Recent advances of terahertz quantum cascade lasers," Proc. SPIE 8119 Terahertz Emitters, Receivers, and Applications II, 81190D (September 07, 2011) (November 7, 2011) [http://dx.doi.org/10.1117/12.899131].
  118. Dave Rogers, V. E. Sandana, F. Hosseini Teherani, S. Gautier, G. Orsal, T. Moudakir, M. Molinari, M. Troyon, M. Peres, M. J. Soares, A. J. Neves, T. Monteiro, D. McGrouther, J. N. Chapman, H. J. Drouhin, M. Razeghi, and A. Ougazzaden , "Use of PLD-grown moth-eye ZnO nanostructures as templates for MOVPE growth of InGaN-based photovoltaics," Renewable Energy and the Environment OSA Technical Digest paper PWB3, Optical Society of America, (2011) (November 2, 2011) [http://www.opticsinfobase.org/abstract.cfm?uri=PV-2011-PWB3].
  119. G. Chen, B.-M. Nguyen, A.M. Hoang, E.K. Huang, S.R. Darvish, and M. Razeghi, "Elimination of surface leakage in gate controlled Type-II InAs/GaSb mid-infrared photodetectors," Applied Physics Letters Vol. 99, No. 18, p. 183503-1 (October 31, 2011) [http://link.aip.org/link/?APL/99/183503].
  120. Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "Room temperature single-mode terahertz sources based on intracavity difference-frequency generation in quantum cascade lasers," Applied Physics Letters Vol. 99, Issue 13, p. 131106-1 (September 26, 2011) [http://link.aip.org/link/?APL/99/131106].
  121. E. Cicek, Z. Vashaei, R. McClintock, and M. Razeghi, "Deep ultraviolet (254 nm) focal plane array," SPIE Proceedings Conference on Infrared Sensors, Devices and Applications; and Single Photon Imaging II, Vol. 8155, p. 81551O-1 (August 21, 2011) [http://dx.doi.org/10.1117/12.904984].
  122. B.M. Nguyen, G. Chen, A.M. Hoang, S. Abdollahi Pour, S. Bogdanov, and M. Razeghi, "Effect of contact doping on superlattice-based minority carrier unipolar detectors," Applied Physics Letters Vol. 99, No. 3, p. 033501-1 (July 18, 2011) [ http://link.aip.org/link/?APL/99/033501].
  123. M. Razeghi; Y. Bai; N. Bandyopadhyay; B. Gokden; Q.Y. Lu; S. Slivken, "Recent advances in IR semiconductor laser diodes and future trends," Photonics Society Summer Topical Meeting Series IEEE [6000041], pp. 55-56 (2011) (July 18, 2011) [http://dx.doi.org/10.1109/PHOSST.2011.6000041].
  124. E.K. Huang, A. Haddadi, G. Chen, B.M. Nguyen, M.A. Hoang, R. McClintock, M. Stegall, and M. Razeghi, "Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance," OSA Optics Letters Vol. 36, No. 13, p. 2560-2562 (July 1, 2011) [http://dx.doi.org/10.1364/OL.36.002560].
  125. M. Razeghi, S. Abdollahi Pour, E.K. Huang, G. Chen, A. Haddadi, and B.M. Nguyen, "Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures," Opto-Electronics Review (OER) Vol. 19, No. 3, June 2011, p. 46-54 (June 1, 2011) [http://dx.doi.org/10.2478/s11772-011-0028-0].
  126. M. Razeghi, B. Gokden, S. Tsao, A. Haddadi, N. Bandyopadhyay, and S. Slivken, "Widely Tunable, Single-Mode, High-Power Quantum Cascade Lasers," SPIE Proceedings Intergreated Photonics: Materials, Devices and Applications, SPIE Microtechnologies Symposium, Prague, Czech Republic, April 18-20, 2011, Vol. 8069, p. 806905-1 (May 31, 2011) [http://dx.doi.org/10.1117/12.887575].
  127. Manijeh Razeghi, "Toward realizing high power semiconductor terahertz laser sources at room temperature," Proc. SPIE 8023 Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 802302 (May 25, 2011) (May 25, 2011) [http://dx.doi.org/10.1117/12.887986].
  128. B.M. Nguyen, G. Chen, M.A. Hoang, and M. Razeghi, "Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer," IEEE Journal of Quantum Electronics (JQE) Vol. 47, No. 5, May 2011, p. 686-690 (May 11, 2011) [http://dx.doi.org/10.1109/JQE.2010.2103049].
  129. Q.Y. Lu, Y. Bai, N. Bandyopadhyay, S. Slivken and M. Razeghi, "2.4 W room temperature continuous wave operation of distributed feedback quantum cascade lasers," Applied Physics Letters Vol. 98, No. 18, p. 181106-1 (May 4, 2011) [ http://link.aip.org/link/?APL/98/181106].
  130. Y. Bai, N. Bandyopadhyay, S. Tsao, S. Slivken and M. Razeghi, "Room temperature quantum cascade lasers with 27% wall plug efficiency," Applied Physics Letters Vol. 98, No. 18, p. 181102-1 (May 3, 2011) [http://link.aip.org/link/doi/10.1063/1.3586773].
  131. S. Bogdanov, B.M. Nguyen, A.M. Hoang, and M. Razeghi, "Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes," Applied Physics Letters Vol. 98, No. 18, p. 183501-1 (May 2, 2011) [http://link.aip.org/link/?APL/98/183501].
  132. M. Razeghi, "III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz," IEEE Photonics Journal-Breakthroughs in Photonics 2010 Vol. 3, No. 2, p. 263-267 (April 26, 2011) [http://dx.doi.org/10.1109/JPHOT.2011.2135340].
  133. M. Razeghi, S. Abdollahi Pour, E.K. Huang, G. Chen, A. Haddadi and B.M. Nguyen, "High operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice," SPIE Proceedings Infrared Technology and Applications XXXVII, Orlando, FL, Vol. 8012, p. 80122Q-1 (April 26, 2011) [http://dx.doi.org/10.1117/12.888060].
  134. E.K. Huang, B.M. Nguyen, S.R. Darvish, S. Abdollahi Pour, G. Chen, A. Haddadi, and M.A. Hoang, "Recent advances in high performance antimonide-based superlattice FPAs," SPIE Proceedings Infrared technology and Applications XXXVII, Orlando, FL, Vol. 8012, p. 80120T-1 (April 25, 2011) [ http://dx.doi.org/10.1117/12.887597].
  135. S. Abdollahi Pour, E.K. Huang, G. Chen, A. Haddadi, B.M. Nguyen and M. Razeghi, "High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices," Applied Physics Letters Vol. 98, No. 14, p. 143501-1 (April 4, 2011) [http://link.aip.org/link/?APL/98/143501].
  136. S. Abdollahi Pour, B. Movaghar, and M. Razeghi, "Tight-binding theory for the thermal evolution of optical band gaps in semiconductors and superlattices," American Physical Review Vol. 83, No. 11, p. 115331-1 (March 15, 2011) [http://link.aps.org/doi/10.1103/PhysRevB.83.115331].
  137. Y. Bai, S.R. Darvish, N. Bandyopadhyay, S. Slivken and M. Razeghi, "Optimizing facet coating of quantum cascade lasers for low power consumption," Journal of Applied Physics Vol. 109, No. 5, p. 053103-1 (March 1, 2011) [http://link.aip.org/link/?JAP/109/053103].
  138. D.J. Rogers, V.E. Sandana, F. Hosseini Teherani, R. McClintock, M. Razeghi, and H.J. Drouhin, "Amorphous ZnO films grown by room temperature pulsed laser deposition on paper and mylar for transparent electronics applications," SPIE Proceedings San Francisco, CA (January 22-27, 2011), Vol. 7940, p. 79401K (January 24, 2011) [http://dx.doi.org/10.1117/12.879928].
  139. Z. Vashaei, C. Bayram, R. McClintock and M. Razeghi, "Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes," SPIE Proceedings San Francisco, CA (January 22-27, 2011), Vol 7945, p. 79451A (January 23, 2011) [http://dx.doi.org/10.1117/12.879858].
  140. B. Gokden, Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken and M. Razeghi, "High power 1D and 2D photonic crystal distributed feedback quantum cascade lasers," SPIE Proceedings San Francisco, CA (January 22-27, 2011), Vol. 7945, p. 79450C (January 23, 2011) [http://dx.doi.org/10.1117/12.879855].
  141. B.M. Nguyen, G. Chen, M.A. Hoang, and M. Razeghi, "Growth and characterization of long wavelength infrared Type-II superlattice Photodiodes on a 3," SPIE Proceedings San Francisco, CA (January 22-27, 2011), Vol. 7945, p. 79451O (January 23, 2011) [http://dx.doi.org/10.1117/12.879860].
  142. M. Ulmer, R. McClintock and M. Razeghi, "Advances in UV sensitive visible blind GaN-based APDs," SPIE Proceedings San Francisco, CA (January 22-27, 2011), Vol. 7945, p. 79451G (January 23, 2011) [http://dx.doi.org/10.1117/12.879942].
  143. M. Razeghi, C. Bayram, Z. Vashaei, E. Cicek and R. McClintock, "III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices," IEEE Photonics Society 23rd Annual Meeting November 7-10, 2010, Denver, CO, Proceedings, p. 351-352 (January 20, 2011) [http://dx.doi.org/10.1109/PHOTONICS.2010.5698904].
  144. Y. Bai, N. Bandyopadhyay, S. Tsao, E. Selcuk, S. Slivken and M. Razeghi, "Highly temperature insensitive quantum cascade lasers," Applied Physics Letters Vol. 97, No. 25 (December 20, 2010) [http://link.aip.org/link/doi/10.1063/1.3529449].
  145. Q.Y. Lu, Y. Bai, N. Bandyopadhyay, Sl Slivken, and M. Razeghi, "Room-temperature continuous wave operation of distributed feedback quantum cascade lasers with watt-level power output," Applied Physics Letters Vol. 97, No. 23, p. 231119-1 (December 6, 2010) [http://link.aip.org/link/?APL/97/231119].
  146. E.K. Huang, P.Y. Delaunay, B.M. Nguyen, S. Abdoullahi-Pour, and M. Razeghi, "Photovoltaic MWIR type-II superlattice focal plane array on GaAs substrate," IEEE Journal of Quantum Electronics (JQE) Vol. 46, No. 12, p. 1704-1708 (December 1, 2010) [http://dx.doi.org/10.1109/JQE.2010.2061218].
  147. J.S. Yu, S. Slivken, and M. Razeghi, "Injector doping level dependent continuous-wave operation of InP-based QCLs at λ~ 7.3 µm above room temperature," Semiconductor Science and Technology (SST) Vol. 25, No. 12, p. 125015 (December 1, 2010) [http://stacks.iop.org/0268-1242/25/125015].
  148. M. Razeghi, Y. Bai, S. Slivken, and S.R. Darvish, "High-performance InP-based midinfrared quantum cascade lasers at Northwestern University," SPIE Optical Engineering Vol. 49, No. 11, November 2010, p. 111103-1 (November 15, 2010) [http://dx.doi.org/10.1117/1.3497623].
  149. P. Manurkar, S.R. Darvish, B.M. Nguyen, M. Razeghi and J. Hubbs, "High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices," Applied Physics Letters Vol. 97, No 19, p. 193505-1 (November 8, 2010) [http://link.aip.org/link/?APL/97/193505].
  150. C. Bayram, Z. Vashaei, and M. Razeghi, "Reliability in room-temperature negative differential resistance characteristics of low-aluminum contact AlGaN/GaN double-barrier resonant tunneling diodes," Applied Physics Letters Vol. 97, No. 18, p. 181109-1 (November 1, 2010) [http://link.aip.org/link/?APL/97/181109].
  151. N. Bandyopadhyay, Y. Bai, B. Gokden, A. Myzaferi, S. Tsao, S. Slivken and M. Razeghi, "Watt level performance of quantum cascade lasers in room temperature continuous wave operation at λ ∼ 3.76 μm," Applied Physics Letters Vol. 97, No. 13 (September 27, 2010) [http://link.aip.org/link/?APL/97/131117].
  152. B. Gokden, Y. Bai, N. Bandyopadhyay, S. Slivken and M. Razeghi, "Broad area photonic crystal distributed feedback quantum cascade lasers emitting 34 W at λ ~ 4.36 μm," Applied Physics Letters Vol. 97, No. 13, p. 131112-1 (September 27, 2010) [http://apl.aip.org/resource/1/applab/v97/i13/p131112_s1].
  153. Z. Vashaei, C. Bayram, P. Lavenus, and M. Razeghi, "Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices," Applied Physics Letters Vol. 97, No. 12, p. 121918-1 (September 20, 2010) [http://link.aip.org/link/?APL/97/121918].
  154. C. Bayram, Z. Vashaei, and M. Razeghi, "Room temperature neagtive differential resistance characteristics of polar III-nitride resonant tunneling diodes," Applied Physics Letters Vol. 97, No. 9, p. 092104-1 (August 30, 2010) [http://link.aip.org/link/?APL/97/092104].
  155. E. Cicek, Z. Vashaei, C. Bayram, R. McClintock, M. Razeghi and M. Ulmer, "Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates," Proceedings Vol. 7780, p. 77801P, SPIE Optics and Photonics Symposium, Conference on Detectors and Imaging Devices: Infrared, Focal Plane and Single Photon, San Diego, CA (August 4, 2010) [http://dx.doi.org/10.1117/12.863905].
  156. R. McClintock, E. Cicek, Z. Vashaei, C. Bayram, M. Razeghi and M. Ulmer, "III-nitride based avalanche photo detectors," Proceedings Vol. 7780, p. 77801B, SPIE Optics and Photonics Symposium, Conference on Detectors and Imaging Devices: Infrared, Focal Plane and Single Photon, San Diego, CA (August 4, 2010) [http://dx.doi.org/10.1117/12.863962].
  157. E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, and M. Razeghi , "Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates," Applied Physics Letters Vol. 96, No. 26, p. 261107 (2010); (June 28, 2010) [http://link.aip.org/link/APPLAB/v96/i26/p261107/s1].
  158. Z. Vashaei, E. Cicek, C. Bayram, R. McClintock and M. Razeghi, "GaN avalanche photodiodes grown on m-plane freestanding GaN substrate," Applied Physics Letters Vol. 96, No. 20, p. 201908-1 (May 17, 2010) [http://link.aip.org/link/?APL/96/201908].
  159. Manijeh Razeghi, Edward Kwei-wei Huang, Binh-Minh Nguyen, Siamak Abdollahi Pour, and Pierre-Yves Delaunay, "Type-II Antimonide-based Superlattices for the Third Generation Infrared Focal Plane Arrays," SPIE Proceedings Infrared Technology and Applications XXXVI, Vol. 7660, pp. 76601F (May 10, 2010) [http://dx.doi.org/10.1117/12.849527].
  160. M. Razeghi, C. Bayram, R. McClintock, F. Hosseini Teherani, D.J. Rogers, and V.E. Sandana, "Novel Green Light Emitting Diodes: Exploring Droop-Free Lighting Solutions for a Sustainable Earth," Journal of Light Emitting Diodes Vol. 2, No. 1, p. 1-33 (April 30, 2010) [http://www.slssl.org/paper/paperview.asp?key=15].
  161. Z. Vashaei, C. Bayram and M. Razeghi, "Demonstration of negative differential resistance in GaN/AlN resonant tunneling didoes at room temperature," Journal of Applied Physics Vol. 107, No. 8, p. 083505 (April 15, 2010) [http://dx.doi.org/10.1063/1.3372763].
  162. P.Y. Delaunay and M. Razeghi, "Spatial Noise and Correctability of Type-II InAs/GaSb Focal Plane Arrays," IEEE Journal of Quanutm Electronics April 2010, Vol. 46, No. 4, p. 584-588 (April 1, 2010) [http://dx.doi.org/10.1109/JQE.2009.2035715].
  163. D.J. Rogers; V.E. Sandana; F. Hosseini Teherani; M. Razeghi, "Thin film transistors with wurtzite ZnO channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition," Proc. SPIE 7603 Oxide-based Materials and Devices, 760318 (March 02, 2010) (March 7, 2010) [http://dx.doi.org/10.1117/12.848512].
  164. Y. Bai, S. Slivken, S. Kuboya, S.R. Darvish and M. Razeghi, "Quantum cascade lasers that emit more light than heat," Nature Photonics February 2010, Vol. 4, p. 99-102 (February 1, 2010) [http://dx.doi.org/10.1038/nphoton.2009.263].
  165. J.L. Pau, J. Piqueras, D.J. Rogers, F. Hosseini Teherani, K. Minder, R. McClintock, and M. Razeghi, "On the interface properties of ZnO/Si electroluminescent diodes," Journal of Applied Physics Vol. 107, No. 3, p. 033719-1 (February 1, 2010) [http://link.aip.org/link/?JAP/107/033719].
  166. M. Razeghi and B.M. Nguyen, "Band gap tunability of Type-II Antimonide-based superlattices," Physics Procedia Vol. 3, Issue 2, p. 1207-1212 (14th International Conference on Narrow Gap Semiconductors and Systems NGSS-14, Sendai, Japan, July 13-17, 2009) (January 31, 2010) [http://dx.doi.org/10.1016/j.phpro.2010.01.164].
  167. S. Tsao, A. Myzaferi, and M. Razeghi, "High performance quantum dot-quantum well infrared focal plane arrays," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7605, p. 76050J-1 (January 27, 2010) [http://dx.doi.org/10.1117/12.846252].
  168. D.J. Rogers, F. Hosseini Teherani, V.E. Sandana, and M. Razeghi, "ZnO Thin Films & Nanostructures for Emerging Optoelectronic Applications," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7605, p. 76050K-1 (January 27, 2010) [http://dx.doi.org/10.1117/12.862634].
  169. C. Bayram, Z. Vashaei and M. Razeghi, "AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition," Applied Physics Letters Vol. 96, No. 4, p. 042103-1 (January 25, 2010) [http://link.aip.org/link/?APL/96/042103].
  170. B. Gokden, S. Slivken and M. Razeghi, "High power photonic crystal distributed feedback quantum cascade lasers emitting at 4.5 micron," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7608, p. 760806-1 (January 22, 2010) [http://dx.doi.org/10.1117/12.855649].
  171. S. Slivken, Y. Bai, B. Gokden, S.R. Darvish and M. Razeghi, "Current status and potential of high power mid-infrared intersubband lasers," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7608, p. 76080B-1 (January 22, 2010) [http://dx.doi.org/10.1117/12.842637].
  172. Y. Bai, S. Slivken, S.R. Darvish, and M. Razeghi, "Very high wall plug efficiency of quantum cascade lasers," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7608, p. 76080F-1 (January 22, 2010) [http://dx.doi.org/10.1117/12.855650].
  173. M. Razeghi, B.M. Nguyen, P.Y. Delaunay, S. Abdollahi Pour, E.K.W. Huang, P. Manukar, S. Bogdanov, and G. Chen, "High operating temperature MWIR photon detectors based on Type-II InAs/GaSb superlattice," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7608, p. 76081Q-1 (January 22, 2010) [http://dx.doi.org/10.1117/12.840422].
  174. B.M. Nguyen, S. Abdollahi Pour, S. Bogdanov and M. Razeghi, "Minority electron unipolar photodetectors based on Type-II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7608, p. 760825-1 (January 22, 2010) [http://dx.doi.org/10.1117/12.855635].
  175. M. Razeghi, S. Slivken, Y. Bai, B. Gokden, and S.R. Darvish, "High power quantum cascade lasers," New Journal of Physics (NJP) Volume 11, p. 125017 (December 1, 2009) [http://stacks.iop.org/1367-2630/11/125017].
  176. Y. Bai, S. Slivken, S.R. Darvish, A. Haddadi, B. Gokden and M. Razeghi, "High power broad area quantum cascade lasers," Applied Physics Letters Vol. 95, No. 22, p. 221104-1 (November 30, 2009) [http://link.aip.org/link/?APL/95/221104].
  177. C. Bayram, N. Pere-Laperne, and M. Razeghi, "Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition," Applied Physics Letters Vol. 95, No. 20, p. 201906-1 (November 16, 2009) [http://link.aip.org/link/?APL/95/201906].
  178. M. Razeghi; Y. Bai; S. Slivken; S. Kuboya; S.R. Darvish, "Recent performance records for mid-IR quantum cascade lasers," Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications 2009. TERA-MIR International Workshop [5379656], (2009) (November 9, 2009) [http://dx.doi.org/10.1109/TERAMIR.2009.5379656].
  179. B.M. Nguyen, S. Bogdanov, S. Abdollahi Pour, and M. Razeghi, "Minority electron unipolar photodetectors based on Type-II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection," Applied Physics Letters Vol. 95, No. 18, p. 183502 (November 2, 2009) [http://link.aip.org/link/?APL/95/183502].
  180. S. Abdollahi Pour, B.M. Nguyen, S. Bogdanov, E.K. Huang, and M. Razeghi, "Demonstration of high performance long wavelength infrared Type-II InAs/GaSb superlattice photodidoe grown on GaAs substrate," Applied Physics Letters Vol. 95, No. 17, p. 173505 (October 26, 2009) [http://link.aip.org/link/?APL/95/173505].
  181. P.Y. Delaunay and M. Razeghi, "Noise analysis in Type-II InAs/GaSb Focal Plane Arrays," Virtual Journal of Nanoscale Science and Technology Vol. 20, No. 14 (October 5, 2009) [http://www.vjnano.org ].
  182. F. Hosseini Teherani; M. Razeghi; D.J. Rogers; Can Bayram; R. McClintock, "Hybrid green LEDs with n-type ZnO substituted for N-type GaN in an inverted P-N junction," LEOS Annual Meeting Conference Proceedings LEOS '09. IEEE, [5343231] (2009) (October 4, 2009) [http://dx.doi.org/10.1109/LEOS.2009.5343231].
  183. N. Péré-Laperne, C. Bayram, L. Nguyen-Thê, R. McClintock, and M. Razeghi, "Tunability of intersubband absorption from 4.5 to 5.3 µm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition," Applied Physics Letters Vol. 95, No. 13, p. 131109 (September 28, 2009) [http://link.aip.org/link/?APL/95/131109].
  184. P.Y. Delaunay and M. Razeghi, "Noise analysis in type-II InAs/GaSb focal plane arrays," Journal of Applied Physics Vol. 106, Issue 6, p. 063110 (September 15, 2009) [http://link.aip.org/link/?JAPIAU/106/063110/1].
  185. T. Yamanaka, B. Movaghar, S. Tsao, S. Kuboya, A. Myzaferi and M. Razeghi, "Gain-length scaling in quantum dot/quantum well infrared photodetectors," Virtual Journal of Nanoscale Science & Technology (September 14, 2009) [http://www.vjnano.org].
  186. Can Bayram; Manijeh Razeghi , "Nitrides push performance of UV photodiodes," Laser Focus World. 45(9) pp. 47-51 (2009) (September 1, 2009) [http://www.laserfocusworld.com/articles/print/volume-45/issue-9/features/ultraviolet-detectors-nitrides-push-performance-of-uv-photodiodes.html].
  187. T. Yamanaka, B. Movaghar, S. Tsao, S. Kuboya, A. Myzaferi and M. Razeghi, "Gain-length scaling in quantum dot/quantum well infrared photodetectors," Applied Physics Letters Vol. 95, No. 9 (August 31, 2009) [http://link.aip.org/link/?APL/95/093502].
  188. M. Razeghi, B.M. Nguyen, P.Y. Delaunay, E.K. Huang, S. Abdollahi Pour, P. Manurkar, and S. Bogdanov, "State-of-the-art Type II Antimonide-based superlattice photodiodes for infrared detection and imaging," SPIE Proceedings Nanophotonics and Macrophotonics for Space Environments II, San Diego, CA, Vol. 7467, p. 74670T-1 (August 5, 2009) [http://spiedigitallibrary.org/proceedings/resource/2/psisdg/7467/1/74670T_1].
  189. J.S. Yu, H.K. Lee, S. Slivken, and M. Razeghi, "Thermal characteristics and analysis of quantum cascade lasers for biochemical sensing applications," SPIE Proceedings Biosensing II, San Diego, CA (August 2-6, 2009), Vol. 7397, p. 739705-1 (August 2, 2009) [http://dx.doi.org/10.1117/12.825594 ].
  190. C. Bayram and M. Razeghi, "Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra," Applied Physics A: Materials Science and Processing Vol. 96, No. 2, p. 403-408 (August 1, 2009) [http://dx.doi.org/10.1007/s00339-009-5186-2].
  191. Y. Bai, B. Gokden, S.R. Darvish, S. Slivken, and M. Razeghi, "Photonic crystal distributed feedback quantum cascade lasers with 12 W output power," Applied Physics Letters Vol. 95, No. 3 (July 20, 2009) [http://link.aip.org/link/?APL/95/031105].
  192. B.M. Nguyen, D. Hoffman, E.K. Huang, S. Bogdanov, P.Y. Delaunay, M. Razeghi and M.Z. Tidrow, "Demonstration of mid-infrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate," Applied Physics Letters Vol. 94, No. 22 (June 8, 2009) [http://link.aip.org/link/?APPLAB/94/223506/1].
  193. M. Razeghi, "High-Performance InP-Based Mid-IR Quantum Cascade Lasers," IEEE Journal of Selected Topics in Quantum Electronics Vol. 15, No. 3, May-June 2009, p. 941-951. (June 5, 2009) [http://dx.doi.org/10.1109/JSTQE.2008.2006764].
  194. M. Razeghi, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E.K. Huang, M.Z. Tidrow, and V. Nathan, "Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays at the Center for Quantum Devices," IEEE Proceedings Vol. 97, No. 6, p. 1056-1066 (June 1, 2009) [http://dx.doi.org/10.1109/JPROC.2009.2017108].
  195. V.E. Sandana, D.J. Rogers, F. Hosseini Teherani, R. McClintock, C. Bayram, M. Razeghi, H-J Drouhin, M.C. Clochard, V. Sallett, G. Garry, and F. Falyouni, "Comparison of ZnO nanostructures grown using pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor transport," Journal of Vacuum Science and Technology B Vol. 27, No. 3, May/June, p. 1678-1683 (May 29, 2009) [http://dx.doi.org/10.1116/1.3137990].
  196. C. Bayram, D. Rogers, F. H. Teherani, and M. Razeghi, "Fabrication and characterization of novel hybrid green light emitting didoes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction," Journal of Vacuum Science and Technology B Vol. 27, No. 3, May/June, p. 1784-1788 (May 29, 2009) [http://dx.doi.org/10.1116/1.3116590].
  197. D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, F. Jomard, M. Molinari, M. Troyon, D. McGrouther, J.N. Chapman, M. Razeghi and A. Ougazzaden, "Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers," Journal of Vacuum Science and Technology B Vol. 27, No. 3, May/June, p. 1655-1657 (May 29, 2009) [http://dx.doi.org/10.1116/1.3137967].
  198. M. Razeghi and C. Bayram, "Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications," SPIE Proceedings Dresden, Germany (May 4-6, 2009), Vol. 7366, p. 73661F-1 (May 20, 2009) [http://dx.doi.org/10.1117/12.819390].
  199. M. Razeghi and R. McClintock, "A Review of III-Nitride Research at the Center for Quantum Devices," Journal of Crystal Growth Vol. 311, No. 10 (May 1, 2009) [http://dx.doi.org/10.1016/j.jcrysgro.2009.01.097 ].
  200. B.M. Nguyen, D. Hoffman, E.K. Huang, P.Y. Delaunay, and M. Razeghi, "High performance antimony based type-II superlattice photodiodes on GaAs substrates," SPIE Porceedings Vol. 7298, Orlando, FL 2009, p. 72981T (April 13, 2009) [http://dx.doi.org/10.1117/12.818373].
  201. P.Y. Delaunay, B.M. Nguyen and M. Razeghi, "Background limited performance of long wavelength infrared focal plane arrays fabricated from type-II InAs/GaSb M-structure superlattice," SPIE Porceedings Vol. 7298, Orlando, FL 2009, p. 72981Q (April 13, 2009) [http://dx.doi.org/10.1117/12.818271].
  202. C. Bayram, N. Pere-Laperne, R. McClintock, B. Fain and M. Razeghi, "Pulsed metal-organic chemical vapor deposition of high quality AlN/GaN superlattices for near-infrared intersubband transitions," Applied Physics Letters Vol. 94, No. 12, p. 121902-1 (March 23, 2009) [http://link.aip.org/link/?APL/94/121902].
  203. D. J. Rogers ; F. Hosseini Teherani ; C. Sartel ; V. Sallet ; F. Jomard ; P. Galtier ; M. Razeghi , "Characterization of ZnO thin films grown on c-sapphire by pulsed laser deposition as templates for regrowth of zno by metal organic chemical vapor deposition," Proc. SPIE 7217 Zinc Oxide Materials and Devices IV, 72170F (February 17, 2009) (February 17, 2009) [http://dx.doi.org/10.1117/12.817032].
  204. D.J. Rogers; V.E. Sandana; F. Hosseini Teherani; M. Razeghi; H.-J. Drouhin, "Fabrication of nanostructured heterojunction LEDs using self-forming Moth-Eye Arrays of n-ZnO Nanocones Grown on p-Si (111) by PLD," Proc. SPIE 7217 Zinc Oxide Materials and Devices IV, 721708 (February 17, 2009) (February 17, 2009) [http://dx.doi.org/10.1117/12.817030].
  205. E.K. Huang, D. Hoffman, B.M. Nguyen, P.Y. Delaunay and M. Razeghi, "Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes," Applied Physics Letters Vol. 94, No. 5, p. 053506-1 (February 2, 2009) [http://link.aip.org/link/?APL/94/053506].
  206. H.K. Lee, K.S. Chung, J.S. Yu and M. Razeghi, "Thermal analysis of buried heterostructure quantum cascade lasers for long-wavelength infrared emission using 2D anisotropic heat-dissipation model," Physica Status Solidi (a) Vol. 206, p. 356-362 (February 1, 2009) [http://dx.doi.org/10.1002/pssa.200824314 ].
  207. P.Y. Delaunay, B.M. Nguyen, D. Hoffman, E.K. Huang, and M. Razeghi, "Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs-GaSb superlattices," IEEE Journal of Quantum Electronics Vol. 45, No. 2, p. 157-162. (February 1, 2009) [http://dx.doi.org/10.1109/JQE.2008.916701].
  208. R. McClintock, J.L. Pau, C. Bayram, B. Fain, P. Giedratis, M. Razeghi and M. Ulmer, "III-Nitride avalanche photodiodes," SPIE Proceedings San Jose, CA Volume 7222-0U (January 26, 2009) [http://dx.doi.org/10.1117/12.809704].
  209. Y. Bai, B. Gokden, S. Slivken, S.R. Darvish, S.A. Pour, and M. Razeghi, "Mid-infrared quantum cascade lasers with high wall plug efficiency," SPIE Proceedings San Jose, CA Volume 7222-0O (January 26, 2009) [http://dx.doi.org/10.1117/12.810281].
  210. C. Bayram, B. Fain, N. Pere-Laperne, R. McClintock and M. Razeghi, "Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions," SPIE Proceedings San Jose, CA Volume 7222-12 (January 26, 2009) [http://dx.doi.org/10.1117/12.809829].
  211. J.L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi, "GaN-based nanostructured photodetectors," SPIE Proceedings San Jose, CA Volume 7222-14 (January 26, 2009) [http://dx.doi.org/10.1117/12.814983].
  212. D. Hoffman, B.M. Nguyen, E.K. Huang, P.Y. Delaunay, S. Bogdanov, P. Manukar, M. Razeghi, and V. Nathan, "The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier," SPIE Proceedings San Jose, CA Volume 7222-15 (January 26, 2009) [http://dx.doi.org/10.1117/12.810033 ].
  213. P.Y. Delaunay, B.M. Nguyen, D. Hoffman, E.K. Huang, P. Manurkar, S. Bogdanov and M. Razeghi, "Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices," SPIE Proceedings San Jose, CA Volume 7222-0W (January 26, 2009) [http://dx.doi.org/10.1117/12.810032].
  214. E.K. Huang, B.M. Nguyen, D. Hoffman, P.Y. Delaunay and M. Razeghi, "Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays," SPIE Proceedings San Jose, CA Volume 7222-0Z (January 26, 2009) [http://dx.doi.org/10.1117/12.810030].
  215. C. Bayram, F. Hosseini Teherani, D.J. Rogers and M. Razeghi, "Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN," SPIE Proceedings San Jose, CA Volume 7217-0P (January 26, 2009) [http://dx.doi.org/10.1117/12.817033].
  216. M. Razeghi, "High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system," SPIE Proceedings San Jose, CA Volume 7230-11 (January 26, 2009) [http://dx.doi.org/10.1117/12.813923].
  217. S. Tsao, T. Yamanaka, S. Abdollahi Pour, I-K Park, B. Movaghar and M. Razeghi, "Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays," SPIE Proceedings San Jose, CA Volume 7234-0V (January 25, 2009) [http://dx.doi.org/10.1117/12.809251].
  218. J.L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi, "GaN nanostructured p-i-n photodiodes," Applied Physics Letters Vol. 93, No. 22, p. 221104-1 (December 1, 2008) [http://link.aip.org/link/?APL/93/221104].
  219. C. Bayram, J.L. Pau, R. McClintock and M. Razeghi, "Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN," Applied Physics B: Lasers and Optics Vol. 95, p. 307-314 (November 29, 2008) [http://dx.doi.org/10.1007/s00340-008-3321-y].
  220. C. Bayram, J.L. Pau, R. McClintock, M. Razeghi, M.P. Ulmer, and D. Silversmith, "High quantum efficiency back-illuminated GaN avalanche photodiodes," Applied Physics Letters Vol. 93, No. 21, p. 211107-1 (November 24, 2008) [http://link.aip.org/link/?APL/93/211107].
  221. J.S. Yu, S. Slivken, A. Evans, and M. Razeghi, "High-performance, continuous-wave quantum-cascade lasers operating up to 85° C at λ ~ 8.8 μm ," Applied Physics A: Materials Science & Processing Vo. 93, No. 2, p. 405-408 (November 1, 2008) [http://dx.doi.org/10.1007/s00339-008-4783-9].
  222. B.M. Nguyen, D. Hoffman, P.Y. Delaunay, E.K. Huang, M. Razeghi, and J. Pellegrino, "Band edge tunability of M-structure for heterojunction design in Sb based Type-II superlattice photodiodes," Applied Physics Letters Vol. 93, No. 16, p. 163502-1 (October 20, 2008) [http://link.aip.org/link/?APL/93/163502].
  223. C. Bayram, J.L. Pau, R. McClintock and M. Razeghi, "Delta-doping optimization for high qualityp-type GaN," Journal of Applied Physics Vol. 104, No. 8 (October 15, 2008) [http://link.aip.org/link/?JAPIAU/104/083512/1].
  224. B. Movaghar, S. Tsao, S. Abdollahi Pour, T. Yamanaka, and M. Razeghi, "Gain and recombination dynamics in photodetectors made with quantum nanostructures: the quantum dot in a well and the quantum well," Virtual Journal of Nanoscale Science & Technology Vol. 18, No. 14 (October 6, 2008) [http://www.vjnano.org].
  225. B.M. Nguyen, D. Hoffman, E.K. Huang, P.Y. Delaunay, and M. Razeghi, "Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K," Applied Physics Letters Vol. 93, No. 12, p. 123502-1 (September 22, 2008) [http://link.aip.org/link/?APL/93/123502].
  226. M. Razeghi, "Quantum Devices Based on Modern Band Structure Engineering and Epitaxial Technology," Modern Physics Letters B Vol. 22, No. 24, p. 2343-2371 (September 20, 2008) [http://dx.doi.org/10.1142/S0217984908016893].
  227. B. Movaghar, S. Tsao, S. Abdollahi Pour, T. Yamanaka, and M. Razeghi, "Gain and recombination dynamics in photodetectors made with quantum nanostructures: The quantum dot in a well and the quantum well," Physical Review B Vol. 78, No. 11 (September 15, 2008) [http://link.aps.org/abstract/PRB/v78/e115320].
  228. B.M. Nguyen, D. Hoffman, P.Y. Delaunay, E.K. Huang and M. Razeghi, "Very high performance LWIR and VLWIR type-II InAs/GaSb superlattice photodiodes with M-structure barrier," SPIE Proceedings Vol. 7082, San Diego, CA 2008, p. 708205 (September 3, 2008) [http://dx.doi.org/10.1117/12.794210].
  229. C. Bayram, F. Hosseini Teherani, D.J. Rogers and M. Razeghi, "A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN," Applied Physics Letters Vol. 93, No. 8, p. 081111-1 (August 25, 2008) [http://link.aip.org/link/?APL/93/081111].
  230. M. Razeghi, B.M. Nguyen, D. Hoffman, P.Y. Delaunay, E.K. Huang, M.Z. Tidrow and V. Nathan, "Development of material quality and structural design for high performance type-II InAs/GaSb superlattice photodiodes and focal plane arrays," SPIE Porceedings Vol. 7082, San Diego, CA 2008, p. 708204 (August 11, 2008) [http://dx.doi.org/10.1117/12.794218].
  231. J.S. Yu, S. Slivken, A. Evans and M. Razeghi, "High-performance, continuous-wave operation of λ ~ 4.6 μm quantum-cascade lasers above room temperature ," IEEE Journal of Quantum Electronics Vol. 44, No. 8, p. 747-754 (August 1, 2008) [http://dx.doi.org/10.1109/JQE.2008.924434].
  232. D. Hoffman, B.M. Nguyen, E.K. Huang, P.Y. Delaunay, M. Razeghi, M.Z. Tidrow and J. Pellegrino, "The effect of doping the M-barrier in very long-wave type-II InAs/GaSb heterodiodes," Applied Physics Letters Vol. 93, No. 3, p. 031107-1 (July 21, 2008) [http://link.aip.org/link/?APL/93/031107].
  233. Y. Bai, S. Slivken, S.R. Darvish, and M. Razeghi, "Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency," Applied Physics Letters Vol. 93, No. 2, p. 021103-1 (July 14, 2008) [http://link.aip.org/link/?APL/93/021103].
  234. D.J. Rogers, D.C. Look, F.H. Teherani, K. Minder, M. Razeghi, A. Largeteau, G. Demazeau, J. Morrod, K.A. Prior, A. Lusson, and S. Hassani, "Investigations of ZnO thin films grown on c-Al(2)O(3) by pulsed laser deposition in N(2) + O(2) ambient," Physica Status Solidi (c) Vol. 5, No. 9, p. 3084-3087 (July 1, 2008) [http://dx.doi.org/10.1002/pssc.200779315].
  235. C. Bayram, J.L. Pau, R. McClintock and M. Razeghi, "Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type delta-doping," Applied Physics Letters Vol. 92, No. 24, p. 241103-1 (June 16, 2008) [http://link.aip.org/link/?apl/92/241103].
  236. S. Tsao, H. Lim, H. Seo, W. Zhang and M. Razeghi, "InP-based quantum-dot infrared photodetectors with high quantum efficiency and high temperature imaging," IEEE Sensors Journal Vol. 8, No. 6, p. 936-941 (June 1, 2008) [http://dx.doi.org/10.1109/JSEN.2008.923940].
  237. Manijeh Razeghi, "New frontiers in InP based quantum devices," Indium Phosphide and Related Materials 2008. IPRM 2008. 20th International Conference on, pp.1,4, (2008) (May 29, 2008) [http://dx.doi.org/10.1109/ICIPRM.2008.4703051].
  238. P.Y. Delaunay, B.M. Nguyen, D. Hoffman and M. Razeghi, "High-Performance Focal Plane Arrays Based on InAs-GaSb Superlattices with a 10-micron Cutoff Wavelegth," IEEE Journal of Quantum Electronics Vol. 44, No. 5, p. 462-467 (May 1, 2008) [http://dx.doi.org/10.1109/JQE.2008.916701].
  239. J.L. Pau, R. McClintock, C. Bayram, K. Minder, D. Silversmith and M. Razeghi, "High Optical Response in Forward Biased (In,Ga)N-GaN Multiquantum-Well Diodes Under Barrier Illumination," IEEE Journal of Quantum Electronics Vol. 44, No. 4, p. 346-353. (April 1, 2008) [http://dx.doi.org/10.1109/JQE.2007.914766].
  240. P.Y. Delaunay, B.M. Nguyen, D. Hoffman, A. Hood, E.K. Huang, M. Razeghi, and M.Z. Tidrow, "High quantum efficiency two color type-II InAs/GaSb n-i-p-p-i-n photodiodes," Applied Physics Letters Vol. 92, No. 11, p. 111112-1 (March 17, 2008) [http://link.aip.org/link/?APL/92/111112/].
  241. M. Razeghi, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E.K. Huang, and M.Z. Tidrow, "Recent advances in LWIR type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices," SPIE Porceedings Vol. 6940, Orlando, FL 2008, p. 694009 (March 17, 2008) [http://dx.doi.org/10.1117/12.782854].
  242. Y. Bai, S.R. Darvish, S. Slivken, W. Zhang, A. Evans, J. Nguyen and M. Razeghi, "Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power," Applied Physics Letters Vol. 92, No. 10, p. 101105-1 (March 10, 2008) [http://link.aip.org/link/?APL/92/101105].
  243. J.L. Pau, C. Bayram, R. McClintock, M. Razeghi and D. Silversmith, "Back-illuminated separate absorption and multiplication GaN avalanche photodiodes," Applied Physics Letters Vol. 92, No. 10, p. 101120-1 (March 10, 2008) [ http://link.aip.org/link/?APL/92/101120].
  244. V.E. Sandana, D.J. Rogers, F.H. Teherani, R. McClintock, M. Razeghi, H.J. Drouhin, M.C. Clochard, V. Sallett, G. Garry and F. Fayoud, "MOCVD Growth of ZnO Nanostructures Using Au Droplets as Catalysts," SPIE Conference January 20-25, 2008, San Jose, CA Proceedings – Zinc Oxide Materials and Devices III, Vol. 6895, p. 68950Z-1-6. (February 1, 2008) [http://dx.doi.org/10.1117/12.775632].
  245. A. Hood, A. Evans and M. Razeghi, "Type-II Superlattices and Quantum Cascade Lasers for MWIR and LWIR Free-Space Communications," SPIE Conference January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 690005-1-9. (February 1, 2008) [http://dx.doi.org/10.1117/12.776376].
  246. Y. Bai, P. Sung, S.R. Darvish, W. Zhang, A. Evans, S. Slivken, and M. Razeghi, "Electrically pumped photonic crystal distributed feedback quantum cascade lasers," SPIE Conference January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000A-1-8. (February 1, 2008) [http://dx.doi.org/10.1117/12.776272].
  247. S. Slivken, A. Evans, J. Nguyen, Y. Bai, P. Sung, S.R. Darvish, W. Zhang and M. Razeghi, "Overview of Quantum Cascade Laser Research at the Center for Quantum Devices," SPIE Conference January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000B-1-8. (February 1, 2008) [http://dx.doi.org/10.1117/12.767315].
  248. P.Y. Delaunay and M. Razeghi, "High performance focal plane array based on type-II InAs/GaSb superlattice heterostructures," SPIE Conference January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000M-1-10. (February 1, 2008) [http://dx.doi.org/10.1117/12.776257].
  249. R. McClintock, J.L. Pau, K. Minder, C. Bayram and M. Razeghi, "III-Nitride photon counting avalanche photodiodes," SPIE Conference January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000N-1-11. (February 1, 2008) [http://dx.doi.org/10.1117/12.776265].
  250. P.Y. Delaunay, B.M. Nguyen, D. Hoffman and M. Razeghi, "Substrate removal for high quantum efficiency back side illuminated type-II InAs/GaSb photodetectors," Applied Physics Letters Vol. 91, No. 23, p. 231106 (December 3, 2007) [ http://link.aip.org/link/?APL/91/231106].
  251. Melville P. Ulmer; Ryan M. McClintock; Jose L. Pau; Manijeh Razeghi, "Advances in APDs for UV astronomy," Proc. SPIE 6686 UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XV, 668605 (September 13, 2007) (November 13, 2007) [http://dx.doi.org/10.1117/12.739919].
  252. M. Razeghi and B.M. Nguyen, "Research activity on Type-II InAs/GaSb superlattice for LWIR detection and imaging at the Center for Quantum Devices," American Institute of Physics Conference Proceedings Vol. 949 Issue 1, p. 35-42, 6th International Workshop on Information Optics (WIO'07), Reykjavik, Iceland, June 25-30, 2007 (October 24, 2007) [http://link.aip.org/link/?APCPCS/949/35/1].
  253. M. Razeghi; H. Lim; S. Tsao; H. Seo; W. Zhang, "Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature," Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS.15-16:[4382251] (2007). (October 21, 2007) [http://dx.doi.org/10.1109/LEOS.2007.4382251].
  254. B.M. Nguyen, D. Hoffman, P.Y. Delaunay, and M. Razeghi, "Dark current suppression in Type-II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier," Applied Physics Letters Vol. 91, No. 16, p. 163511-1 (October 15, 2007) [http://link.aip.org/link/?APL/91/163511].
  255. D. Hoffman, B.M. Nguyen, P.Y. Delaunay, A. Hood, M. Razeghi and J. Pellegrino, "Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes," Applied Physics Letters Vol. 91, No. 14, p. 143507-1 (October 1, 2007) [http://link.aip.org/link/?APL/91/143507].
  256. Y. Bai, S.R. Darvish, S. Slivken, P. Sung, J. Nguyen, A. Evans, W. Zhang, and M. Razeghi, "Electrically pumped photonic crystal distributed feedback quantum cascade lasers," Applied Physics Letters Vol. 91, No. 14, p. 141123-1 (October 1, 2007) [http://link.aip.org/link/?APL/91/141123].
  257. J.M. Jung, C.R. Kim, H. Ryu, M. Razeghi and W.G. Jung, "ZnO 3D flower-like nanostructure synthesized on GaN epitaxial layer by simple route hydrothermal process," Journal of Alloys and Compounds (September 15, 2007) [http://dx.doi.org/10.1016/j.jallcom.2007.09.077].
  258. B.M. Nguyen, D. Hoffman, P.Y. Delaunay, M. Razeghi and V. Nathan, "Polarity inversion of Type-II InAs/GaSb superlattice photodiodes," Applied Physics Letters Vol. 91, No. 10, p. 103503-1 (September 3, 2007) [http://dx.doi.org/10.1063/1.2779855].
  259. P.Y. Delaunay, A. Hood, B.M. Nguyen, D. Hoffman, Y. Wei, and M. Razeghi, "Passivation of type-II InAs/GaSb double heterostructure," Applied Physics Letters Vol. 91, No. 9, p. 091112-1 (August 27, 2007) [http://link.aip.org/link/?APL/91/091112].
  260. A. Evans, S.R. Darvish, S. Slivken, J. Nguyen, Y. Bai and M. Razeghi, "Buried heterostructure quantum cascade lasers with high continuous-wave wall plug efficiency," Applied Physics Letters Vol. 91, No. 7, p. 071101-1 (August 13, 2007) [http://link.aip.org/link/?APL/91/071101].
  261. K. Minder, J.L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi and D. Silversmith, "Scaling in back-illuminated GaN avalanche photodiodes," Applied Physics Letters Vol. 91, No. 7, p. 073513-1 (August 13, 2007) [http://link.aip.org/link/?APL/091/073513].
  262. D.J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M.R. Correira, M. Peres, A. Neves, D. McGrouther, J.N. Chapman, and M. Razeghi, "Use of ZnO thin films as sacrifical templates for metal organic vapor phase epitaxy and chemical lift-off of GaN," Applied Physics Letters Vol. 91, No. 7, p. 071120-1 (August 13, 2007) [ http://link.aip.org/link/?APL/091/071120].
  263. J. L. Pau, R. McClintock, K. Minder, C. Bayram, P. Kung, M. Razeghi, E. Muñoz, and D. Silversmith, "Geiger-mode operation of back-illuminated GaN avalanche photodiodes ," Applied Physics Letters Vol. 91, No. 04, p. 041104 -1 (July 23, 2007) [http://link.aip.org/link/?APL/091/041104].
  264. M. Razeghi; A. Evans; J. Nguyen; Y. Bai; S. Slivken; S.R. Darvish; K. Mi, "High-power mid- and far- wavelength infrared lasers for free space communication," Proc. SPIE 6593 Photonic Materials, Devices, and Applications II, 65931V (June 12, 2007) (June 12, 2007) [http://dx.doi.org/10.1117/12.718784].
  265. B.M. Nguyen, D. Hoffman, Y. Wei, P.Y. Delaunay, A. Hood and M. Razeghi, "Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 µm ," Applied Physics Letters Vol. 90, No. 23, p. 231108-1 (June 4, 2007) [http://link.aip.org/link/?APL/90/231108].
  266. Andrew Hood, Pierre-Yves Delaunay, Darin Hoffman, Binh-Minh Nguyen, Yajun Wei, Manijeh Razeghi, and Vaidya Nathan, "Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation," Applied Physics Letters 90 233513 (June 4, 2007) [http://link.aip.org/link/?APL/90/233513].
  267. S. Tsao, H. Lim, W. Zhang, and M. Razeghi, "High operating temperature 320 x 256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector," Virtual Journal of Nanoscale Science and Technology (May 28, 2007) [http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=15&Issue=21#MAJOR7].
  268. S. Tsao, H. Lim, W. Zhang, and M. Razeghi, "High operating temperature 320 x 256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector," Applied Physics Letters Vol. 90, No. 20, p. 201109 (May 14, 2007) [ http://link.aip.org/link/?APL/090/201109].
  269. M. Razeghi; A. Evans; Y. Bai; J. Nguyen; S. Slivken; S.R. Darvish; K. Mi, "Current status of high performance quantum cascade lasers at the center for quantum devices," Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 588-593:[4266015] (2007) (May 14, 2007) [http://dx.doi.org/10.1109/ICIPRM.2007.381258].
  270. Jagmohan Bajaj; Gerry Sullivan; Don Lee; Ed Aifer; Manijeh Razeghi, "Comparison of type-II superlattice and HgCdTe infrared detector technologies," Proc. SPIE 6542 Infrared Technology and Applications XXXIII, 65420B (May 14, 2007) (May 14, 2007) [http://dx.doi.org/10.1117/12.723849].
  271. Ho-Chul Lim; Stanley Tsao; Wei Zhang; Manijen Razeghi, "Self-assembled semiconductor quantum dot infrared photodetector operating at room temperature and focal plane array," Proc. SPIE 6542 Infrared Technology and Applications XXXIII, 65420R (May 14, 2007) (May 14, 2007) [http://dx.doi.org/10.1117/12.719670].
  272. Vaidya Nathan; Manijeh Razeghi, "Type II superlattice infrared detectors and focal plane arrays," Proc. SPIE 6542 Infrared Technology and Applications XXXIII, 654209 (May 14, 2007) (May 14, 2007) [http://dx.doi.org/10.1117/12.723730].
  273. S. Slivken, A. Evans, W. Zhang and M. Razeghi, "High-power, continuous-operation intersubband laser for wavelengths greater than 10 micron," Applied Physics Letters Vol. 90, No. 15, p. 151115-1 (April 9, 2007) [http://link.aip.org/link/?APL/90/151115].
  274. P.Y. Delaunay, B.M. Nguyen, D. Hoffman, and M. Razeghi, "320x256 infrared focal plane array based on type-II InAs/GaSb superlattice with a 12 μm cutoff wavelength," SPIE Porceedings Vol. 6542, Orlando, FL 2007, p. 654204 (April 9, 2007) [http://dx.doi.org/10.1117/12.723832].
  275. R. McClintock, J.L. Pau, K. Minder, C. Bayram, P. Kung and M. Razeghi, "Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes," Applied Physics Letters Vol. 90 No. 14, p. 141112-1 (April 2, 2007) [http://link.aip.org/link/?APL/90/141112].
  276. D. Rogers, F.H. Teherani, P. Kung, K. Minder, and M. Razeghi, "Materials characterization of n-ZnO/p-GaN:Mg/c-Al(2)O(3) UV LEDs grown by pulsed laser deposition and metal-organic chemical vapor deposition," Superlattices and Microstructures (April 1, 2007) [http://dx.doi.org/10.1016/j.spmi.2007.04.075 ].
  277. H. Lim, S. Tsao, W. Zhang, and M. Razeghi, "High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature," Applied Physics Letters Vol. 90, No. 13, p. 131112-1 (March 26, 2007) [http://link.aip.org/link/?APL/90/131112].
  278. Allan J. Evans; Manijeh Razeghi, "Quantum cascade laser: A tool for trace chemical detection," American Filtration and Separations Society - 20th Annual Conference and Exposition of the American Filtration and Separations Society 2:914-923 (2007) (March 26, 2007).
  279. K. Minder, F.H. Teherani, D. Rogers, C. Bayram, R. McClintock, P. Kung, and M. Razeghi, "Etching of ZnO Towards the Development of ZnO Homostructure LEDs," SPIE Conference January 25-29, 2007, San Jose, CA Proceedings – Zinc Oxide Materials and Devices II, Vol. 6474, p. 64740Q-1-6 (January 29, 2007) [http://Link.aip.org/link/?PSISDG/6474/64740Q/1].
  280. M. Razeghi, A. Hood and A. Evans, "Type-II InAs/GaSb Superlattice Focal Plane Arrays for High-Performance Third Generation Infrared Imaging and Free-Space Communication," SPIE Conference January 25-29, 2007, San Jose, CA Proceedings – Optoelectronic Integrated Circuits IX, Vol. 6476, p. 64760Q-1-9 (January 29, 2007) [http://dx.doi.org/10.1117/12.712783].
  281. P. Kung, R. McClintock, J. Pau Vizcaino, K. Minder, C. Bayram and M. Razeghi, "III-Nitride Avalanche Photodiodes," SPIE Conference January 25-29, 2007, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices IV, Vol. 6479, p. 64791J-1-12 (January 29, 2007) [http://link.aip.org/link/?PSISDG/6479/64791J/1].
  282. J. Nguyen and M. Razeghi, "Techniques for High-Quality SiO2 Films," SPIE Conference January 25-29, 2007, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices IV, Vol. 6479, p. 64791K-1-8 (January 29, 2007) [http://dx.doi.org/10.1117/12.716608].
  283. B-M. Nguyen, M. Razeghi, V. Nathan, and G.J. Brown, "Type-II ‘M’ Structure Photodiodes: An Alternative Material Design for Mid-Wave to Long Wavelength Infrared Regimes," SPIE Conference January 25-29, 2007, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices IV, Vol. 6479, p. 64790S-1-10 (January 29, 2007) [http://link.aip.org/link/?PSISDG/6479/64790S/1].
  284. S.R. Darvish, W. Zhang, A. Evans, J.S. Yu, S. Slivken, and M. Razeghi, "High-power continuous-wave operation of distributed-feedback quantum-cascade lasers at λ ~ 7.8 µm," Applied Physics Letters 89 (25) (December 18, 2006) [http://link.aip.org/link/?APPLAB/89/251119/1].
  285. E.C.F. da Silva, D. Hoffman, A. Hood, B. Nguyen, P.Y. Delaunay and M. Razeghi, "Influence of Residual Impurity Background on the Non-radiative Recombination Processes in High Purity InAs/GaSb superlattice Photodiodes," Applied Physics Letters 89 (24) (December 11, 2006) [http://dx.doi.org/10.1063/1.2405877].
  286. H. Lim, B. Movaghar, S. Tsao, M. Taguchi, W. Zhang, A.A. Quivy, and M. Razeghi, "Gain and recombination dynamics of quantum-dot infrared photodetecto," Virtual Journal of Nanoscale Science & Technology (December 4, 2006) [http://www.vjnano.org].
  287. H. Lim, B. Movaghar, S. Tsao, M. Taguchi, W. Zhang, A.A. Quivy, and M. Razeghi, "Gain and recombination dynamics of quantum-dot infrared photodetectors," Physical Review B 74 (20) (November 15, 2006) [http://link.aps.org/doi/10.1103/PhysRevB.74.205321].
  288. S. Slivken and M. Razeghi, "Recent advances in high power mid- and far-wavelength infrared lasers for free space communication," SPIE Optics East Conference October 1-4, 2006, Boston, MA Proceedings – Active and Passive Optical Components for Communications VI, Vol. 6389, p. 63890S-1 (October 4, 2006) [http://link.aip.org/link/?PSISDG/6389/63890S/1].
  289. M. Razeghi, P.Y. Delaunay, B.M. Nguyen, A. Hood, D. Hoffman, R. McClintock, Y. Wei, E. Michel, V. Nathan and M. Tidrow, "First Demonstration of ~ 10 microns FPAs in InAs/GaSb SLS," IEEE LEOS Newsletter 20 (5) (October 1, 2006) [http://oai.dtic.mil/oai/oai?verb=getRecord&metadataPrefix=html&identifier=ADA464072].
  290. J. Nguyen, J.S. Yu, A. Evans, S. Slivken and M. Razeghi, "Optical Coatings by ion-beam sputtering deposition for long-wave infrared quantum cascade lasers," Applied Physics Letters 89 (11) (September 11, 2006) [http://link.aip.org/link/?APPLAB/89/111113/1].
  291. A. Hood, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E. Michel and M. Razeghi, "High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared," Applied Physics Letters 89 (9) (August 28, 2006) [http://link.aip.org/link/?APPLAB/89/093506/1].
  292. M. Razeghi, H. Lim, S. Tsao, M. Taguchi, W. Zhang and A.A. Quivy, "High performance mid-wavelength quantum dot infrared photodetectors for focal plane arrays," SPIE Conference San Diego, CA, Vol. 6297, pp. 62970C (August 13, 2006) [http://dx.doi.org/10.1117/12.682091].
  293. A. Evans and M. Razeghi, "Reliability of strain-balanced Ga0.331In0.669As/Al0.659In0.341As/InP quantum-cascade lasers under continuous-wave room-temperature operation," Applied Physics Letters 88 (26) (June 26, 2006) [http://link.aip.org/link/?APPLAB/88/261106/1].
  294. J.S. Yu, A. Evans, S. Slivken, S.R. Darvish and M. Razeghi, "Temperature dependent characteristics of λ ~ 3.8 µm room-temperature continuous-wave quantum-cascade lasers," Applied Physics Letters 88 (25) (June 19, 2006) [http://link.aip.org/link/?APPLAB/88/251118].
  295. M. Razeghi, H. Lim, S. Tsao, M. Taguchi, W. Zhang, and A.A. Quivy, "Quantum Dots in GaInP/GaInAs/GaAs for Infrared Sensing," Advances in Science and Technology 51 (June 4, 2006) [http://dx.doi.org/10.4028/www.scientific.net/AST.51.201].
  296. S.R. Darvish, S. Slivken, A. Evans, J.S. Yu, and M. Razeghi, "Room-temperature, high-power and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ ~ 9.6 µm," Applied Physics Letters 88 (20) (May 15, 2006) [http://link.aip.org/link/?APL/88/201114/1].
  297. M. Razeghi, Y. Wei, A. Hood, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E. Michel and R. McClintock, "Type-II superlattice photodetectors for MWIR to VLWIR focal plane arrays," SPIE Infrared Technology and Applications Conference April 17-21, 2006, Orlando, FL Proceedings – Infrared Technology and Applications XXXII, Vol. 6206, p. 62060N-1 (April 21, 2006) [http://link.aip.org/link/?PSISDG/6206/62060N/1].
  298. M. Razeghi, H. Lim, S. Tsao, M. Taguchi, W. Zhang, and A.A. Quivy, "Quantum-dot infrared photodetectors and focal plane arrays," SPIE Infrared Technology and Applications Conference April 17-21, 2006, Orlando, FL Proceedings – Infrared Technology and Applications XXXII, Vol. 6206, p. 62060I-1 (April 21, 2006) [http://link.aip.org/link/?PSISDG/6206/62060I/1].
  299. D.J. Rogers, F.Hosseini Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, "Electroluminescence at 375 nm from a Zn0/GaN:Mg/c-Al2O3 heterojunction light emitting diodes," Applied Physics Letters 88 (14) (April 13, 2006) [http://link.aip.org/link/?APL/88/141918/1].
  300. A. Tsekoun, R. Go, M. Pushkarsky, M. Razeghi, and C. Kumar N. Patel, "Improved performance of quantum cascade lasers through a scalable, manufacturable epitaxial-side-down mounting process," Proceedings of the National Academy of Sciences 103 (13) (March 26, 2006) [http://www.pnas.org/cgi/content/abstract/103/13/4831].
  301. J. Szafraniec, S. Tsao, W. Zhang, H. Lim, M. Taguchi, A.A. Quivy, B. Movaghar and M. Razeghi, "High-detectivity quantum-dot infrared photodetectors grown by metal-organic chemical-vapor deposition," Applied Physics Letters 88 (121102) (March 20, 2006) [http://link.aip.org/link/?APL/88/121102/1].
  302. D.J. Rogers, F. Hosseini Teherani, T. Monteiro, M. Soares, A. Neves, M. Carmo, S. Periera, M.R. Correia, A. Lusson, E. Alves, N.P. Barradas, J.K. Morrod, K.A. Prior, P. Kung, A. Yasan, and M. Razeghi, "Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition," Phys. Stat. Sol. C 3 (4) (March 1, 2006) [http://dx.doi.org/10.1002/pssc.200564756].
  303. J.S. Yu, S. Slivken, A. Evans, S.R. Darvish, J. Nguyen, and M. Razeghi, "High-power λ ~ 9.5 µm quantum-cascade lasers operating above room temperature in continuous-wave mode," Applied Physics Letters 88 (9) (February 27, 2006) [http://link.aip.org/link/?APL/88/091113/1].
  304. F. Fuchs, D. Hoffman, A. Gin, A. Hood, Y. Wei, and M. Razeghi, "Negative luminescence of InAs/GaSb superlattice photodiodes," Phys. Stat. Sol. C 3 (3) (February 22, 2006) [http://doi.wiley.com/10.1002/pssc.200564175].
  305. D. Hoffman, A. Hood, F. Fuchs and M. Razeghi, "Non-equilibrium radiation of long wavelength InAs/GaSb superlattice photodiodes," Journal of Applied Physics 99 (February 15, 2006) [http://link.aip.org/link/?JAP/99/043503/1].
  306. A. Hood, D. Hoffman, Y. Wei, F. Fuchs, and M. Razeghi, "Capacitance-voltage investigation of high purity InAs/GaSb superlattice photodiodes," Applied Physics Letters 88 (6) (February 6, 2006) [http://dx.doi.org/10.1063/1.2172399 ].
  307. D. Hoffman, A. Hood, E. Michel, F. Fuchs, and M. Razeghi, "Electroluminescence of InAs/GaSb heterodiodes," IEEE Journal of Quantum Electronics 42 (2) (February 1, 2006) [http://dx.doi.org/10.1109/JQE.2005.861621].
  308. A. Evans, J. Nguyen, S. Slivken, J.S. Yu, S.R. Darvish, and M. Razeghi, "Quantum-Cascade Lasers Operating in Continuous-Wave Mode Above 90°C at λ ~5.25 µm," Applied Physics Letters 88 (5) (January 30, 2006) [http://link.aip.org/link/?APPLAB/88/051105/1].
  309. J.S. Yu, S.R. Darvish, A. Evans, J. Nguyen, S. Slivken, and M. Razeghi, "Room-temperature continuous-wave operation of quantum-cascade lasers at λ ~ 4 µm," Applied Physics Letters 88 (4) (January 23, 2006) [http://link.aip.org/link/?APL/88/041111/1].
  310. D. Hoffman and M. Razeghi, "Positive and negative luminescence in binary Type-II InAs/GaSb superlattice photodiodes," SPIE Conference San Jose, CA, Vol. 6127, pp. 61271H (January 23, 2006) [http://link.aip.org/link/?PSISDG/6127/61271H/1].
  311. R. McClintock, K. Minder, A. Yasan, C. Bayram, F. Fuchs, P. Kung and M. Razeghi, "Solar-blind avalanche photodiodes," SPIE Conference San Jose, CA, Vol. 6127, pp. 61271D (January 23, 2006) [http://dx.doi.org/10.1117/12.660147].
  312. A. Hood, M. Razeghi, V. Nathan and M.Z. Tidrow, "Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes," SPIE Conference San Jose, CA, Vol. 6127, pp. 61270U (January 23, 2006) [http://link.aip.org/link/?PSISDG/6127/61270U/1].
  313. H. Lim, S. Tsao, M. Taguchi, W. Zhang, A. Quivy and M. Razeghi, "InGaAs/InGaP Quantum-Dot Photodetector with a High Detectivity," SPIE Conference San Jose, CA, Vol. 6127, pp. 61270N (January 23, 2006) [http://link.aip.org/link/?PSISDG/6127/61270N/1].
  314. W. Zhang, H. Lim, M. Taguchi, A. Quivy and M. Razeghi, "InAs quantum dot infrared photodetectors on InP by MOCVD," SPIE Conference San Jose, CA, Vol. 6127, pp. 61270M (January 23, 2006) [http://link.aip.org/link/?PSISDG/6127/61270M/1].
  315. W.G. Jung, S.H. Jung, P. Kung, and M. Razeghi, "Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane," SPIE Conference San Jose, CA, Vol. 6127, pp. 61270K (January 23, 2006) [http://link.aip.org/link/?PSISDG/6127/61270K/1].
  316. W.W. Bewley, I. Vurgaftman, C.S. Kim, J.R. Meyer, J. Nguyen, A.J. Evans, J.S. Yu, S.R. Darvish, S. Slivken and M. Razeghi, "High-Power Distributed-Feedback Quantum Cascade Lasers," SPIE Conference San Jose, CA, Vol. 6127, pp. 612704 (January 23, 2006) [http://link.aip.org/link/?PSISDG/6127/612704/1].
  317. S. Slivken, A. Evans, J.S. Yu, S.R. Darvish and M. Razeghi, "High Power, Continuous-Wave, Quantum Cascade Lasers for MWIR and LWIR Applications," SPIE Conference San Jose, CA, Vol. 6127, pp. 612703 (January 23, 2006) [http://link.aip.org/link/?PSI/6127/612703/1].
  318. A. Tsekoun, R. Go, M. Pushkarsky, M. Razeghi, C.K.N. Patel, "Improved performance of quantum cascade lasers via manufacturable quality epitaxial side down mounting process utilizing aluminum nitride heatsinks," SPIE Conference San Jose, CA, Vol. 6127, pp. 612702 (January 23, 2006) [http://link.aip.org/link/?PSISDG/6127/612702/1].
  319. W.G. Jung, S.H. Jung, P. Kung, and M. Razeghi, "Fabrication of GaN Nanotubular Material using MOCVD with an Aluminium Oxide Membrane," Nanotechnology 17 (January 1, 2006) [http://www.iop.org/EJ/abstract/0957-4484/17/1/010].
  320. R. McClintock, A. Yasan, K. Minder, P. Kung, and M. Razeghi, "Avalanche multiplication in AlGaN based solar-blind photodetectors," Applied Physics Letters 87 (24) (December 12, 2005) [http://link.aip.org/link/?APL/87/241123/1].
  321. D. Hoffman, A. Gin, Y. Wei, A. Hood, F. Fuchs, and M. Razeghi, "Negative and positive luminescence in mid-wavelength infrared InAs/GaSb superlattice photodiodes," IEEE Journal of Quantum Electronics 41 (12) (December 1, 2005) [http://dx.doi.org/10.1109/JQE.2005.858783].
  322. D. Hoffman, A. Hood, Y. Wei, A. Gin, F. Fuchs, and M. Razeghi, "Negative luminescence of long-wavelength InAs/GaSb superlattice photodiodes," Applied Physics Letters 87 (20) (November 14, 2005) [http://dx.doi.org/10.1063/1.2130536].
  323. W.W. Bewley, I. Vurgaftman, C.S. Kim, J.R. Meyer, J. Nguyen, A. Evans, J.S. Yu, S.R. Darvish, S. Slivken, and M. Razeghi, "Characterization and Analysis of Single-Mode High-Power CW Quantum-Cascade Laser," Journal of Applied Physics 98 (October 15, 2005) [http://dx.doi.org/10.1063/1.2112170].
  324. A. Hood, M. Razeghi, E. Aifer, G.J. Brown, "On the performance and surface passivation of type-II InAs/GaSb superlattice photodiodes for the very-long- wavelength infrared," Applied Physics Letters 87 (1) (October 10, 2005) [http://dx.doi.org/10.1063/1.2089170].
  325. H. Lim, W. Zhang, S. Tsao, T. Sills, J. Szafraniec, K. Mi, B. Movaghar, and M. Razeghi, "Quantum Dot Infrared Photodetectors: Comparison Experiment and Theory," Virtual Journal of Nanoscale Science and Technology 12 (9) (August 29, 2005) [http://www.vjnano.org].
  326. H. Lim, W. Zhang, S. Tsao, T. Sills, J. Szafraniec, K. Mi, B. Movaghar, and M. Razeghi, "Quantum Dot Infrared Photodetectors: Comparison Experiment and Theory," Physical Review B 72 (August 17, 2005) [http://dx.doi.org/10.1103/PhysRevB.72.085332].
  327. J.S. Yu, S. Slivken, S.R. Darvish, A. Evans, B. Gokden and M. Razeghi, "High-power, room-temperature and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ = 4.8 µm," Virtual Journal of Nanoscale Science and Technology 12 (5) (August 1, 2005) [http://www.vjnano.org].
  328. J.S. Yu, S. Slivken, S.R. Darvish, A. Evans, B. Gokden and M. Razeghi, "High-power, room-temperature and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ = 4.8 µm," Applied Physics Letters 87 (4) (July 25, 2005) [http://dx.doi.org/10.1063/1.2408639 ].
  329. A. Gin, B. Movaghar, M. Razeghi and G.J. Brown, "Infrared detection from GaInAs/InP nanopillar arrays," Nanotechnology 16 (July 1, 2005) [http://dx.doi.org/10.1088/0957-4484/16/9/067].
  330. Manijeh Razeghi; Wei Zhang; Ho-Chul Lim; Stanley Tsao; John Szafraniec; Maho Taguchi; Bijan Movaghar, "Focal plane arrays based on quantum dot infrared photodetectors," Proc. SPIE 5838 Nanotechnology II, 125 (June 28, 2005); (June 28, 2005) [http://dx.doi.org/10.1117/12.607534].
  331. Y. Wei, A. Hood, H. Yau, A. Gin, M. Razeghi, M.Z. Tidrow, V. Natha, "Uncooled operation of Type-II InAs/GaSb superlattice photodiodes in the mid- wavelength infrared range," Applied Physics Letters 86 (23) (June 6, 2005) [http://link.aip.org/link/?APL/086/233106 ].
  332. J.S. Yu, A. Evans, S. Slivken, S.R. Darvish, and M. Razeghi, "Short Wavelength (λ~ 4.3 μm) High-Performance Continuous-Wave Quantum-Cascade Lasers," IEEE Photonics Technology Letters 17 (6) (June 1, 2005) [http://dx.doi.org/10.1109/LPT.2005.846568].
  333. W.W. Bewley, J.R. Lindle, C.S. Kim, I. Vurgaftman, J.R. Meyer, A.J. Evans, J.S. Yu, S. Slivken, and M. Razeghi, "Beam Steering in High-Power CW Quantum Cascade Lasers," IEEE Journal of Quantum Electronics 41 (6) (June 1, 2005) [http://dx.doi.org/10.1109/JQE.2005.846691].
  334. M. Razeghi; A. Yasan; R. McClintock; K. Mayes; P. Kung, "Short-wavelength ultraviolet light-emitting diodes based on AlGaN," 2005 Conference on Lasers and Electro-Optics CLEO. 153-155 [CMI5] (2005) (May 22, 2005) [http://www.opticsinfobase.org/abstract.cfm?uri=CLEO-2005-CMI5].
  335. W. Zhang, H. Lim, M. Taguchi, S. Tsao, B. Movaghar, and M. Razeghi, "High Detectivity InAs Quantum-Dot Infrared Photodetectors Grown on InP by Metalorganic Chemical Vapor Deposition," Applied Physics Letters 86 (19) (May 9, 2005) [http://dx.doi.org/10.1063/1.1923176 ].
  336. M. Razeghi, Y. Wei, A. Gin, A. Hood, V. Yazdanpanah, M.Z. Tidrow, and V. Nathan, "High performance Type-II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays," SPIE Conference Orlando, FL, Vol. 5783, pp. 86 (March 28, 2005) [http://dx.doi.org/10.1117/12.605291 ].
  337. Y. Wei, A. Hood, H. Yau, V. Yazdanpanah, M. Razeghi, M.Z. Tidrow and V. Nathan, "High-Performance Type-II InAs/GaSb Superlattice Photodiodes with Cutoff Wavelength Around 7 µm," Applied Physics Letters 86 (9) (February 28, 2005) [http://link.aip.org/link/?APPLAB/86/091109/1].
  338. J.R. Meyer, W.W. Bewley, J.R. Lindle, I. Vurgaftman, A.J. Evans, J.S. Yu, S. Slivken, and M. Razeghi, "High-Power CW Mid-IR Quantum Cascade Lasers," SPIE Conference Jose, CA, (January 22, 2005) [http://dx.doi.org/10.1117/12.597072].
  339. R. McClintock, A. Yasan, K. Mayes, P. Kung, and M. Razeghi, "Back-illuminated solar-blind photodetectors for imaging applications," SPIE Conference Jose, CA, Vol. 5732, pp.175 (January 22, 2005) [http://dx.doi.org/10.1117/12.597077].
  340. A. Yasan, R. McClintock, K. Mayes, P. Kung, and M. Razeghi, "AlGaN-based deep UV light emitting diodes with peak emission below 255 nm," SPIE Conference Jose, CA, Vol. 5732, pp. 197 (January 22, 2005) [http://dx.doi.org/10.1117/12.597078].
  341. Y. Wei, A. Hood, A. Gin, V. Yazdanpanah, M. Razeghi and M. Tidrow, "High performance LWIR Type-II InAs/GaSb superlattice photodetectors and infrared focal plane array," SPIE Conference Jose, CA, Vol. 5732, pp. 309 (January 22, 2005) [http://dx.doi.org/10.1117/12.597141].
  342. A. Hood, Y. Wei, A. Gin, M. Razeghi, M. Tidrow, and V. Nathan, "Passivation of Type-II InAs/GaSb superlattice photodetectors," SPIE Conference Jose, CA, Vol. 5732, pp. 316 (January 22, 2005) [http://dx.doi.org/10.1117/12.597140].
  343. W. Zhang, H. Lim, M. Taguchi, S. Tsao, J. Szafraniec, B. Movaghar, M. Razeghi, and M. Tidrow, "High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD," SPIE Conference Jose, CA, Vol. 5732, pp. 326 (January 22, 2005) [http://dx.doi.org/10.1117/12.597139].
  344. S. Tsao, K. Mi, J. Szafraniec, W. Zhang, H. Lim, B. Movaghar, and M. Razeghi, "High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization," SPIE Conference Jose, CA, Vol. 5732, pp. 334 (January 22, 2005) [http://dx.doi.org/10.1117/12.597208].
  345. A. Gin, Y. Wei, A. Hood, D. Hoffman, M. Razeghi and G.J. Brown, "GaInAs/InP nanopillar arrays for long wavelength infrared detection," SPIE Conference Jose, CA, Vol. 5732, pp. 350 (January 22, 2005) [http://dx.doi.org/10.1117/12.597073].
  346. D.J. Rogers, F. Hosseini Teherani, A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, M. Razeghi and G. Garry, "ZnO Thin Film Templates for GaN-based Devices," SPIE Conference Jose, CA, Vol. 5732, pp. 412 (January 22, 2005) [http://dx.doi.org/10.1117/12.596912].
  347. M. Razeghi, H. Lim, S. Tsao, J. Szafraniec, W. Zhang, K. Mi, and B. Movaghar, "Transport and Photodetection in Self-Assembled Semiconductor Quantum Dots," Nanotechnology 16 (January 7, 2005) [http://dx.doi.org/10.1088/0957-4484/16/2/007].
  348. R. McClintock, K. Mayes, A. Yasan, D. Shiell, P. Kung, and M. Razeghi, "320x256 Solar-Blind Focal Plane Arrays based on AlxGa1-xN," Applied Physics Letters 86 (1) (January 3, 2005) [http://link.aip.org/link/?APL/086/011117].
  349. J. Jiang, S. Tsao, K. Mi, M. Razeghi, G.J. Brown, C. Jelen and M.Z. Tidrow, "Advanced Monolithic Quantum Well Infrared Photodetector Focal Plane Array Integrated with Silicon Readout Integrated Circuit," Infrared Physics and Technology 46 (3) (January 1, 2005) [http://dx.doi.org/10.1016/j.infrared.2004.02.002].
  350. A. Evans, J.S. Yu, S. Slivken, and M. Razeghi, "Continuous-wave operation of λ ~ 4.8 µm quantum-cascade lasers at room temperature," Applied Physics Letters 85 (12) (September 20, 2004) [http://link.aip.org/link/?APPLAB/85/2166/1].
  351. M. Razeghi, A. Yasan, R. McClintock, K. Mayes, D. Shiell, S. Darvish, and P. Kung, "Review of III-Nitride Optoelectronic Materials for light Emission and Detection," Physica Status Solidi C S141 - S148 (September 10, 2004) [http://dx.doi.org/10.1002/pssc.200405133].
  352. J. Jiang, K. Mi, S. Tsao, W. Zhang, H. Lim, T.O'Sullivan, T. Sills, M. Razeghi, G.J. Brown, and M.Z. Tidrow, "Demonstration of a 256x256 Middle-Wavelength Infrared Focal Plane Array based on InGaAs/InGaP Quantum Dot Infrared Photodetectors (QDIPs)," Applied Physics Letters 84 (13) (April 29, 2004) [http://link.aip.org/link/?APL/084/2232].
  353. J. Jiang, S. Tsao, T. O'Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, M. Razeghi, G.J. Brown, and M.Z. Tidrow, "High Detectivity InGaAs/InGaP Quantum-Dot Infrared Photodetectors Grown by Low Pressure Metalorganic Chemical Vapor Deposition," Applied Physics Letters 84 (12) (April 22, 2004) [http://link.aip.org/link/?APPLAB/84/2166/1].
  354. J. Jiang, K. Mi, S. Tsao, W. Zhang, H. Lim, T.O'Sullivan, T. Sills, M. Razeghi, G.J. Brown, and M.Z. Tidrow, "Demonstration of a 256x256 Middle-Wavelength Infrared Focal Plane Array based on InGaAs/InGaP Quantum Dot Infrared Photodetectors (QDIPs)," Virtual Journal of Nanoscale Science and Technology 9 (13) (April 5, 2004) [http://www.vjnano.org].
  355. J. Jiang, S. Tsao, T. O'Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, M. Razeghi, G.J. Brown, and M.Z. Tidrow, "High Detectivity InGaAs/InGaP Quantum-Dot Infrared Photodetectors Grown by Low Pressure Metalorganic Chemical Vapor Deposition," Virtual Journal of Nanoscale Science and Technology 9 (12) (March 29, 2004) [http://www.vjnano.org].
  356. A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi and M.Z. Tidrow, "Ammonium Sulfide Passivation of Type-II InAs/GaSb Superlattice Photodiodes," Applied Physics Letters 84 (12) (March 22, 2004) [http://link.aip.org/link/?APPLAB/84/2037/1].
  357. J. Jiang, S. Tsao, T. O'Sullivan, M. Razeghi, and G.J. Brown, "Fabrication of Indium Bumps for Hybrid Infrared Focal Plane Array Applications," Infrared Physics and Technology 45 (2) (March 1, 2004) [http://dx.doi.org/10.1016/j.infrared.2003.08.002].
  358. J.S. Yu, A. Evans, J. David, L. Doris, S. Slivken and M. Razeghi, "High-Power Continuous-Wave Operation of Quantum-Cascade Lasers Up to 60 °C," IEEE Photonics Technology Letters 16 (3) (March 1, 2004) [http://dx.doi.org/10.1109/LPT.2004.823686].
  359. S. Slivken, J.S. Yu, A. Evans, L. Doris, J. David, and M. Razeghi, "Ridge-Width Dependence on High-Temperature Continuous-Wave Quantum-Cascade Laser Operation," IEEE Photonics Technology Letters 16 (3) (March 1, 2004) [http://dx.doi.org/10.1109/LPT.2004.823746].
  360. R. McClintock, A. Yasan, K. Mayes, D. Shiell, S.R. Darvish, P. Kung and M. Razeghi, "High Quantum Efficiency AlGaN Solar-Blind Photodetectors," Applied Physics Letters 84 (8) (February 23, 2004) [http://link.aip.org/link/?APL/084/1248].
  361. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S.R. Darvish, P. Kung, and M. Razeghi, "High Power 280 nm AlGaN Light Emitting Diodes Based on an Asymmetric Single Quantum Well," Applied Physics Letters 84 (7) (February 16, 2004) [http://link.aip.org/link/?APL/84/1046].
  362. Y. Wei and M. Razeghi, "Modeling of Type-II InAs/GaSb Superlattices Using Empirical Tight-Binding Method and Interface Engineering," Physical Review B 69 (8) (February 15, 2004) [http://dx.doi.org/10.1103/PhysRevB.69.085316 ].
  363. A. Gin, Y. Wei, J. Bae, A. Hood, J. Nah, and M. Razeghi, "Passivation of Type-II InAs/GaSb Superlattice Photodiodes," International Conference on Metallurgical Coatings and Thin Films (ICMCTF) San Diego, CA; Thin Solid Films 447-448 (January 30, 2004) [http://dx.doi.org/10.1016/j.tsf.2003.09.002].
  364. R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. Darvish, P. Kung and M. Razeghi, "High Quantum Efficiency Solar-Blind Photodetectors," SPIE Conference Jose, CA, Vol. 5359, pp. 434 (January 25, 2004) [http://dx.doi.org/10.1117/12.529348].
  365. A. Yasan, R. McClintock, K. Mayes, D. Shiell, S. Darvish, P. Kung and M. Razeghi, "Growth of Deep UV Light Emitting Diodes by Metalorganic Chemical Vapor Deposition," SPIE Conference Jose, CA, Vol. 5359, pp. 400 (January 25, 2004) [http://dx.doi.org/10.1117/12.529343].
  366. Y. Wei, M. Razeghi, G.J. Brown, and M.Z. Tidrow, "Modeling Type-II InAs/GaSb Superlattices Using Empirical Tight-Binding Method: New Aspects," SPIE Conference Jose, CA, Vol. 5359, pp. 301 (January 25, 2004) [http://dx.doi.org/10.1117/12.528297].
  367. A. Evans, J. David, L. Doris, J.S. Yu, S. Slivken and M. Razeghi, "High Power, Room Temperature, Continuous-Wave Operation of Quantum Cascade Lasers Grown by GasMBE," SPIE Conference Jose, CA, Vol. 5359, pp. 188 (January 25, 2004) [http://dx.doi.org/10.1117/12.529664].
  368. A. Evans, J.S. Yu, J. David, L. Doris, K. Mi, S. Slivken, and M. Razeghi, "High-temperature high-power continuous-wave operation of buried heterostructure quantum-cascade lasers," Applied Physics Letters 84 (3) (January 19, 2004) [http://link.aip.org/link/?APPLAB/84/314/1].
  369. J.S. Yu, A. Evans, J. David, L. Doris, S. Slivken, and M. Razeghi, "Cavity Length Effects of High-Temperature High-Power Continuous Wave Characteristics in Quantum-Cascade Lasers," Applied Physics Letters 83 (25) (December 22, 2003) [http://link.aip.org/link/?APPLAB/83/5136/1].
  370. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S.R. Darvish, P. Kung and M. Razeghi, "4.5 mW Operation of AlGaN-based 267 nm Deep-Ultraviolet Light-Emitting Diodes," Applied Physics Letters 83 (23) (December 8, 2003) [http://link.aip.org/link/?APL/83/4701].
  371. A. Yasan, R. McClintock, K. Mayes, D.H. Kim, P. Kung, and M. Razeghi, "Photoluminescence Study of AlGaN-based 280 nm Ultraviolet Light-Emitting Diodes," Applied Physics Letters 83 (20) (November 17, 2003) [http://link.aip.org/link/?APL/83/4083].
  372. Y. Wei, J. Bae, A. Gin, A. Hood, M. Razeghi, G.J. Brown, and M. Tidrow, "High Quality Type-II InAs/GaSb Superlattices with Cutoff Wavelength ~3.7 µm Using Interface Engineering," Journal of Applied Physics 94 (7) (October 1, 2003) [http://link.aip.org/link/?JAPIAU/94/4720/1].
  373. J.S. Yu, S. Slivken, A. Evans, L. Doris, and M. Razeghi, "High-Power Continuous-Wave Operation of a 6 µm Quantum-Cascade Laser at Room Temperature," Applied Physics Letters 83 (13) (September 29, 2003) [http://link.aip.org/link/?APPLAB/83/2503/1].
  374. M. Razeghi, "Overview of Antimonide Based III-V Semiconductor Epitaxial Layers and their Applications at the Center for Quantum Devices," The European Physical Journal-Applied Physics Vol. 23 (September 15, 2003) [http://dx.doi.org/10.1051/epjap:2003056].
  375. J. Jiang, K. Mi, R. McClintock, M. Razeghi, G.J. Brown, and C. Jelen, "Demonstration of 256x256 Focal Plane Arrays Based on Al-free GaInAs/InP QWIP," IEEE Photonics Technology Letters 15 (9) (September 1, 2003) [http://dx.doi.org/10.1109/LPT.2003.816667].
  376. J.S. Yu, S. Slivken, A. Evans, J. David and M. Razeghi, "Very High Average Power at Room Temperature from λ ~ 5.9 μm Quantum Cascade Lasers," Virtual Journal of Nanoscale Science & Technology 26 (May 26, 2003) [http://www.vjnano.org].
  377. J.S. Yu, S. Slivken, A. Evans, J. David and M. Razeghi, "Very High Average Power at Room Temperature from λ ~ 5.9 μm Quantum Cascade Lasers," Applied Physics Letters 82 (20) (May 19, 2003) [http://dx.doi.org/10.1063/1.1574404 ].
  378. M. Razeghi, A. Gin, Y. Wei, J. Bae, and J. Nah, "Quantum Sensing Using Type-II InAs/GaSb Superlattice for Infrared Detection," Microelectronics Journal 34 (5-8) (May 1, 2003) [http://dx.doi.org/10.1016/S0026-2692(03)00035-1].
  379. M. Razeghi, S. Slivken, J. Yu, A. Evans, and J. David, "High Performance Quantum Cascade Lasers at λ ~ 6 μm," Microelectronics Journal 34 (5-8) (May 1, 2003) [http://dx.doi.org/10.1016/S0026-2692(03)00030-2].
  380. M. Razeghi, S. Slivken, A. Tahraoui, A. Matlis, and Y.S. Park, "High Power 3-12 μm Infrared Lasers: Recent Improvements and Future Trends," Advanced Research Workshop on Semiconductor Nanostructures Queenstown, New Zealand; Proceedings (February 5, 2003) [http://dx.doi.org/10.1016/S1386-9477(01)00210-7].
  381. M. Razeghi and S. Slivken, "High Power Quantum Cascade Lasers Operating at Room Temperature," Journal of the Korean Physical Society Vol. 42, pp. S637-S641 (February 1, 2003) [http://www.kps.or.kr/home/kor/journal/library/journal.asp?journaluid=%7B358C63CB-9841-41CA-8BE0-9463416F01AD%7D].
  382. G.J. Brown, F. Szmulowicz, K. Mahalingam, S. Houston, Y. Wei, A. Gin and M. Razeghi, "Recent Advances in InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection," SPIE Conference San Jose, CA, Vol. 4999, pp. 457 (January 27, 2003) [http://dx.doi.org/10.1117/12.483916].
  383. S. Slivken and M. Razeghi, "Very High Average Power Quantum Cascade Lasers by GasMBE," SPIE Conference San Jose, CA, Vol. 4999, pp. 59 (January 27, 2003) [http://dx.doi.org/10.1117/12.507398].
  384. A. Yasan and M. Razeghi, "Very high quality p-type AlxGa1-xN/GaN superlattice," special ISDRS issue of Solid State Electronics Journal 47 (January 1, 2003) [http://dx.doi.org/10.1016/S0038-1101(02)00211-3].
  385. M. Razeghi, "Artificial Atoms: Solution for Infrared Multicolor Focal Plane Arrays," Proceedings of the American Physical Society Annual APS March Meeting (January 1, 2003) [http://flux.aps.org/meetings/YR02/MAR02/baps/abs/S80001.html].
  386. M. Razeghi and S. Slivken, "High Performance Quantum Cascade Laser Results at the Centre for Quantum Devices," Physica Status Solidi 195 (1) (January 1, 2003) [http://dx.doi.org/10.1002/pssa.200306221].
  387. M. Razeghi and S. Slivken, "High Power Quantum Cascade Lasers (QCLs) Grown by GasMBE," Opto-Electronics Review 11 (2) (January 1, 2003) [http://www.wat.edu.pl/review/optor/abstract11_2.htm#85].
  388. S. Slivken, A. Evans, J. David, and M. Razeghi, "High-Average-Power, High-Duty-Cycle (~6 μm) Quantum Cascade Lasers," Virtual Journal of Nanoscience & Technology 9 (December 9, 2002) [http://www.vjnano.org].
  389. S. Slivken, A. Evans, J. David, and M. Razeghi, "High-Average-Power, High-Duty-Cycle (~6 μm) Quantum Cascade Lasers," Applied Physics Letters 81 (23) (December 2, 2002) [http://dx.doi.org/10.1063/1.1526462 ].
  390. Y. Wei, A. Gin, M. Razeghi and G.J. Brown, "Type-II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm," Applied Physics Letters 81 (19) (November 4, 2002) [http://link.aip.org/link/APPLAB/v81/i19/p3675/s1].
  391. M. Razeghi and S. Slivken, "High Power Quantum Cascade Lasers (QCLs) Grown by GasMBE," SPIE Proceedings International Conference on Solid State Crystals (ICSSC), Zakopane, Poland, (October 14, 2002) [http://dx.doi.org/10.1117/12.519745].
  392. A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, H. Zhang, P. Kung, M. Razeghi, S.K. Lee and J.Y. Han, "Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire," Applied Physics Letters 81 (12) (September 16, 2002) [http://link.aip.org/link/?APL/81/2151].
  393. A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, and M. Razeghi, "Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm," Virtual Journal of Nanoscale Science & Technology 5 (August 5, 2002) [http://www.vjnano.org].
  394. A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, and M. Razeghi, "Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm," Applied Physics Letters 81 (5) (July 29, 2002) [http://link.aip.org/link/?APL/81/801].
  395. M. Razeghi and S. Slivken, "Optoelectronic Integrated Circuits (OEICs) for Next Generation WDM Communications," SPIE Conference Boston, MA, (July 29, 2002) [http://dx.doi.org/10.1117/12.475555 ].
  396. S. Slivken, Z. Huang, A. Evans, and M. Razeghi, "High-Power (~9 μm) Quantum Cascade Lasers," Applied Physics Letters 80 (22) (June 3, 2002) [http://link.aip.org/link/APPLAB/v80/i22/p4091/s1].
  397. M. Razeghi, "Low-Pressure Metal Organic Chemical Vapor Deposition Growth of InAsSbP Based Materials for Infrared Laser Applications," 15th Annual Solid State and Diode Laser Technology Review (SSDLTR) Albuquerque, NM; Technical Digest MIR1 (June 3, 2002).
  398. W. Zhang and M. Razeghi, "High power InAsSbP based electrical injection laser diodes emitting between 3-5 μm," 15th Annual Solid State and Diode Laser Technology Review (SSDLTR) Albuquerque, NM; Technical Digest MIR1 (June 3, 2002).
  399. S. Slivken, Z. Huang, A. Evans, and M. Razeghi, "High-Power (~9 μm) Quantum Cascade Lasers," Virtual Journal of Nanoscale Science and Technology 5 (22) (June 3, 2002) [http://www.vjnano.org].
  400. M. Razeghi and S. Slivken, "Optoelectronics: Learning From Nature," Business Briefing: Global Optical Communications (June 1, 2002).
  401. M. Razeghi, "Short Wavelength Solar-Blind Detectors: Status, Prospects, and Markets," IEEE Proceedings Wide Bandgap Semiconductor Devices: The Third Generation Semiconductor Comes of Age 90 (6) (June 1, 2002) [http://dx.doi.org/10.1109/JPROC.2002.1021565].
  402. Y. Wei, A. Gin, M. Razeghi, and G.J. Brown, "Advanced InAs/GaSb Superlattice Photovoltaic Detectors for Very-Long Wavelength Infrared Applications," Applied Physics Letters 80 (18) (May 6, 2002) [http://link.aip.org/link/APPLAB/v80/i18/p3262/s1].
  403. P. Kung, A. Yasan, R. McClintock, S. Darvish, K. Mi, and M. Razeghi, "Future of AlxGa1-xN Materials and Device Technology for Ultraviolet Photodetectors," SPIE Conference San Jose, CA, Vol. 4650, pp. 199 (May 1, 2002) [http://dx.doi.org/10.1117/12.467650].
  404. A. Yasan, R. McClintock, S.R. Darvish, Z. Lin, K. Mi, P. Kung, and M. Razeghi, "Characteristics of high quality p-type AlxGa1-xN/GaN superlattices," Applied Physics Letters 80 (12) (March 18, 2002) [http://link.aip.org/link/?APL/80/2108].
  405. J. Jiang, C. Jelen, M. Razeghi and G.J. Brown, "High Detectivity GaInAs/InP Quantum Well Infrared Photodetectors Grown on Si Substrates," IEEE Photonics Technology Letters 14 (3) (March 1, 2002) [http://dx.doi.org/10.1109/68.986817].
  406. M. Razeghi, Y. Wei, A. Gin, G.J. Brown and D. Johnstone, "Type-II InAs/GaSb Superlattices and Detectors with Cutoff Wavelength Greater Than 18 μm," Proceedings of the SPIE San Jose, CA, Vol. 4650, 111 (2002) (January 25, 2002) [http://dx.doi.org/10.1117/12.467673].
  407. S. Slivken and M. Razeghi, "Development of Quantum Cascade Lasers for High Peak Output Power and Low Threshold Current Density," Solid State Electronics 46 (January 1, 2002) [http://dx.doi.org/10.1016/S0038-1101(02)00100-4].
  408. A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, M. Razeghi, and R.J. Molnar, "280 nm UV LEDs Grown on HVPE GaN Substrates," Opto-Electronics Review 10 (4) (January 1, 2002) [http://www.wat.edu.pl/review/optor/abstract10_4.htm].
  409. H. Ohsato, K. Wada, T. Kato, C.J. Sun, and M. Razeghi, "Crystallographic Growth Models of Wurtzite-Type Thin Films on 6H-SiC," Materials Science Forum Vol. 389-393 no. 2, pp. 1489-1492. (January 1, 2002) [http://www.scientific.net/MSF.389-393.1489].
  410. M. Razeghi, H. Mohseni and G.J. Brown, "Type-II Binary Superlattices for Infrared Detector," Journal of the Korean Physical Society 39 (December 1, 2001) [http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=894634D7-8A72-4D85-9852-E67A4A1F83C0].
  411. M. Razeghi, Y. Wei, A. Gin and G.J. Brown, "Quantum Dots of InAs/GaSb Type-II Superlattice for Infrared Sensing," Materials Research Society Fall Meeting Boston, MA; MRS Symposium Proceedings, Vol. 692 (H3.1) (November 26, 2001) [http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2496&DID=135405].
  412. M. Razeghi, S. Slivken, A. Tahraoui, A. Matlis, and Y.S. Park, "High Power 3-12 μm Infrared Lasers: Recent Improvements and Future Trends," Physica E: Low-Dimensional Systems and Nanostructures 11 (2-3) (October 1, 2001) [http://dx.doi.org/10.1016/S1386-9477(01)00210-7].
  413. H. Mohseni and M. Razeghi, "Long Wavelength Type-II Photodiodes Operating at Room Temperature," IEEE Photonics Technology Letters 13 (5) (May 1, 2001) [http://dx.doi.org/10.1109/68.920771 ].
  414. H. Mohseni, M. Razeghi, G.J. Brown, Y.S. Park, "High Performance InAs/GaSb Superlattice Photodiodes for the Very Long Wavelength Infrared Range," Applied Physics Letters 78 (15) (April 9, 2001) [http://link.aip.org/link/APPLAB/v78/i15/p2107/s1].
  415. M. Razeghi and H. Mohseni, "Miniaturization: enabling technology for the new millennium," SPIE International Conference on Solid State Crystals Zakopane, Poland, (April 1, 2001) [http://dx.doi.org/10.1117/12.425401].
  416. A. Tahraoui, A. Matlis, S. Slivken, J. Diaz, and M. Razeghi, "High performance quantum cascade lasers (~11 μm) operating at high temperature (T>= 425K)," Applied Physics Letters 78 (4) (January 22, 2001) [http://link.aip.org/link/APPLAB/v78/i4/p416/s1].
  417. M. Razeghi, S. Slivken, A. Tahraoui and A. Matlis, "High Performance Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy," SPIE Conference San Jose, CA, (January 22, 2001) [http://dx.doi.org/10.1117/12.429791].
  418. C. Jelen, M. Erdtmann, S. Kim, and M. Razeghi, "Quantum Dot Intersubband Photodetectors," SPIE Conference San Jose, CA, (January 22, 2001) [http://dx.doi.org/10.1117/12.429402].
  419. M. Erdtmann and M. Razeghi, "Monolithic Integration of GaInAs/InP Quantum Well Infrared Photodetectors on Si Substrate," SPIE Conference San Jose, CA, (January 22, 2001) [http://dx.doi.org/10.1117/12.429426].
  420. H. Mohseni, Y. Wei, and M. Razeghi, "High Performance Type-II InAs/GaSb Superlattice Photodiodes," SPIE Conference San Jose, CA, (January 22, 2001) [http://dx.doi.org/10.1117/12.429406].
  421. R. McClintock, P. Sandvik, K. Mi, F. Shahedipour, A. Yasan, C. Jelen, P. Kung, and M. Razeghi, "AlxGa1-xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector Applications," SPIE Conference San Jose, CA, Vol. 4288, pp. 219 (January 22, 2001) [http://dx.doi.org/10.1117/12.429409 ].
  422. M. Razeghi, "Novel Sb-based Alloys for Uncooled Infrared Photodetector Applications," SPIE Conference San Jose, CA, (January 22, 2001) [http://dx.doi.org/10.1117/12.429414].
  423. M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino and Y.S. Park, "Long-Wavelength Quantum Well Infrared Photodetectors," Defense Science Journal 51 (1) (January 1, 2001).
  424. M. Razeghi and H. Mohseni, "Miniaturization: enabling technology for the new millennium," Opto-Electronics Review 9 (2) (January 1, 2001).
  425. M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G.J. Brown, and Y.S. Park, "Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices," Infrared Physics and Technology 42 (3-5) (January 1, 2001).
  426. P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, "AlxGa1-xN for Solar-Blind UV Detectors," Journal of Crystal Growth 231 (2001) (January 1, 2001) [http://dx.doi.org/10.1016/S0022-0248(01)01467-1].
  427. J.J. Lee and M. Razeghi, "Novel Sb-based Materials for Uncooled Infrared Photodetector Applications," Journal of Crystal Growth 221 (1-4) (December 1, 2000).
  428. B. Lane and M. Razeghi, "High Power Electrically Injected Mid-Infrared Interband Lasers Grown by LP-MOCVD," Journal of Crystal Growth 221 (1-4) (December 1, 2000).
  429. M. Razeghi, "Optoelectronic Devices Based on III-V Compound Semiconductors Which Have Made a Major Scientific and Technological Impact in the Past 20 Years," IEEE Journal of Selected Topics in Quantum Electronics 6 (6) pp.1344 - 1354 (November 1, 2000) [http://dx.doi.org/10.1109/2944.902188].
  430. A. Matlis, S. Slivken, A. Tahraoui, K.J. Luo, J. Diaz, Z. Wu, A. Rybaltowski, C. Jelen, and M. Razeghi, "Low-threshold and high power (~9.0 μm) quantum cascade lasers operating at room temperature," Applied Physics Letters 77 (12) (September 18, 2000) [http://link.aip.org/link/APPLAB/v77/i12/p1741/s1].
  431. H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, G.J. Brown, W.C. Mitchel, and Y.S. Park, "Very Long Wavelength Infrared Type-II Detectors Operating at 80K," Applied Physics Letters 77 (11) (September 11, 2000) [http://link.aip.org/link/APPLAB/v77/i11/p1572/s1].
  432. P. Kung and M. Razeghi, "III-Nitride Wide Bandgap Semiconductors: A Survey of the Current Status and Future Trends of the Material and Device technology," Opto-Electronics Review 8 (3) (September 1, 2000) [http://baztech.icm.edu.pl/baztech/cgi-bin/btgetdoc.cgi?BWA1-0001-0864].
  433. M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G. J. Brown, and Y.S. Park, "Quantum Well Infrared Photodetectors (3 - 20 μm) Focal Plane Arrays: Monolithic Integration with Si-based Readout-integrated Circuitry for Low Cost and High Performance," SPIE Conference Infrared Technology and Applications XXVI, San Diego, CA, (July 30, 2000).
  434. M. Razeghi, P. Sandvik, P. Kung, D. Walker, K. Mi, X. Zhang, V. Kumar, J. Diaz, and F. Shahedipour, "Lateral Epitaxial Overgrowth of GaN on Sapphire and Silicon Substrates for Ultraviolet Photodetector Applications," Materials Science and Engineering B: Solid-State Materials for Advanced Technology Vol. B74 (1-3) (May 1, 2000).
  435. B. Lane, S. Tong, J. Diaz, Z. Wu, and M. Razeghi, "High Power InAsSb/InAsSbP Electrical Injection Laser Diodes Emitting Between 3—5 μm," Materials Science and Engineering B: Solid-State Materials for Advanced Technology Vol. B74 (1-3) (May 1, 2000).
  436. D. Walker and M. Razeghi, "The Development of Nitride-based UV Photodetector," Opto-Electronics Review 8 (1) (March 1, 2000).
  437. H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, W. Mitchel, and A. Saxler, "Growth and Characterization of Very Long Wavelength Type-II Infrared Detectors," SPIE Conference San Jose, CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382113].
  438. H. Mohseni, J. Wojkowski, A. Tahraoui, M. Razeghi, G. Brown and W. Mitche, "Growth and Characterization of Type-II Non-Equilibrium Photovoltaic Detectors for Long Wavelength Infrared Range," SPIE Conference San Jose, CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382114].
  439. M. Erdtmann, A. Matlis, C. Jelen, M. Razeghi, and G. Brown, "High-responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition," SPIE Conference San Jose, CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382122].
  440. M. Erdtmann, J. Jiang, A. Matlis, A. Tahraoui, C. Jelen, M. Razeghi, and G. Brown, "Growth and Optimization of GaInAsP/InP Material System for Quantum Well Infrared Photodetector Applications," SPIE Conference San Jose, CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382123].
  441. P. Sandvik, D. Walker, P. Kung, K. Mi, F. Shahedipour, V. Kumar, X. Zhang, J. Diaz, C. Jelen, and M. Razeghi, "Solar-Blind AlxGa1-xN p-i-n Photodetectors grown on LEO and non-LEO GaN," SPIE Conference San Jose, CA, Vol. 3948, pp. 265 (January 26, 2000) [http://dx.doi.org/10.1117/12.382126].
  442. M. Razeghi, P. Kung, P. Sandvik, K. Mi, X. Zhang, V.P. Dravid, J. Freitas, and A. Saxler, "LEO of III-Nitride on Al2O3 and Si Substrates," SPIE Conference San Jose, CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382133].
  443. M. Wraback, H. Shen, P. Kung, M. Razeghi, J.C. Carrano, T. Li, and J.C. Campbell, "Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques," SPIE Conference San Jose, CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382137].
  444. D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X.H. Zhang, and M. Razeghi, "Solar-blind AlGaN photodiodes with very low cutoff wavelength," Applied Physics Letters 76 (4) (January 24, 2000) [http://link.aip.org/link/?APL/76/403].
  445. J.J. Lee and M. Razeghi, "Tl incorporation in InSb and lattice contraction of In1-xTlxSb," Applied Physics Letters 76 (3) (January 17, 2000) [http://link.aip.org/link/APPLAB/v76/i3/p297/s1].
  446. M. Razeghi, "Advanced Semiconductor Lasers in the 3—10 μm Wavelength Range," International Journal of High Speed Electronics and Systems 10 (1 (January 1, 2000).
  447. M. Razeghi, P. Kung, P. Sandvik, X. Zhang, K. Mi, D. Walker, V. Kumar, and J. Diaz, "Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth," 10th International Workshop on the Physics of Semiconductor Devices (IWPSD-99) New Delhi, India; Proceedings (December 14, 1999).
  448. A. Streltsov, K.D. Moll, A. Gaeta, P. Kung, D. Walker, and M. Razeghi, "Pulse Autocorrelation Measurements Based on Two- and Three-Photon Conductivity in a GaN Photodiode," Applied Physics Letters 75 (24) (December 13, 1999) [http://link.aip.org/link/APPLAB/v75/i24/p3778/s1].
  449. M. Razeghi, "Kinetics of Quantum States in Quantum Cascade Lasers: Device Design Principles and fabrication," special issue of Microelectronics Journal 30 (10) (October 1, 1999).
  450. H. Mohseni, J. Wojkowski, M. Razeghi, G. Brown, and W. Mitchel, "Uncooled InAs/GaSb Type-II infrared detectors grown on GaAs substrate for the 8–12 μm atmospheric window," IEEE Journal of Quantum Electronics 35 (7) (July 1, 1999) [http://dx.doi.org/10.1109/68.920771].
  451. J.J. Lee, J.D. Kim, and M. Razeghi, "Exploration of Novel InSbBi Alloy for Uncooled Infrared Photodetector Applications," special issue of the Journal of the Korean Physical Society 35 (July 1, 1999).
  452. S. Kim, M. Erdtmann, and M. Razeghi, "Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors," special issue of the Journal of the Korean Physical Society 35 (July 1, 1999).
  453. H.J. Yi and M. Razeghi, "Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs (808 nm) Laser Diodes," special issue of the Journal of the Korean Physical Society 35 (July 1, 1999).
  454. B. Lane, Z. Wu, A. Stein, J. Diaz, and M. Razeghi, "InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition," Applied Physics Letters 74 (23) (June 7, 1999) [http://link.aip.org/link/APPLAB/v74/i23/p3438/s1].
  455. M. Razeghi, P. Kung, D. Walker, E. Monroy, M. Hamilton, and P. Sandvik, "Development of High-performance III-Nitride-based Semiconductor Devices," special issue of the Journal of the Korean Physical Society 34 (June 1, 1999).
  456. S. Slivken, A. Matlis, A. Rybaltowski, Z. Wu and M. Razeghi, "Low-Threshold 7.3 μm Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy," Applied Physics Letters 74 (19) (May 19, 1999) [http://link.aip.org/link/APPLAB/v74/i19/p2758/s1].
  457. V.I. Litvinov and M. Razeghi, "Exciton localization in group-III nitride quantum wells," Physical Review B 59 (15) (May 15, 1999) [http://link.aps.org/doi/10.1103/PhysRevB.59.9783].
  458. A. Saxler, W.C. Mitchel, P. Kung and M. Razeghi, "Aluminum gallium nitride short-period superlattices doped with magnesium," Applied Physics Letters 74 (14) (April 9, 1999) [http://link.aip.org/link/APPLAB/v74/i14/p2023/s1].
  459. D. Wu, B. Lane, H. Mohseni, J. Diaz and M. Razeghi, "High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm," Applied Physics Letters 74 (9) (March 1, 1999) [http://link.aip.org/link/APPLAB/v74/i9/p1194/s1].
  460. D.N. Hahn, G.T. Kiehne, G.K.L. Wong, J.B. Ketterson, P. Kung, A. Saxler and M. Razeghi, "Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides," Journal of Applied Physics 85 (5) (March 1, 1999) [http://link.aip.org/link/JAPIAU/v85/i5/p2497/s1].
  461. C. Jelen and M. Razeghi, "AlGaInAs/InP-based Quantum Well Infrared Photodetectors," Opto-Electronics Review 7 (1) (March 1, 1999).
  462. J.J. Lee, J.D. Kim, and M. Razeghi, "Novel InTlSb Alloy for Uncooled Long-Wavelength Infrared Photodetectors," Opto-Electronics Review 7 (1) (March 1, 1999).
  463. M. Razeghi, "Recent Advance in Semiconductor Mid-Infrared Lasers Emitting at 3–12 μm," Opto-Electronics Review 7 (1) (March 1, 1999).
  464. E. Monroy, M. Hamilton, D. Walker, P. Kung, F.J. Sanchez, and M. Razeghi, "High-quality visible-blind AlGaN p-i-n photodiodes," Applied Physics Letters 74 (8) (February 22, 1999) [http://link.aip.org/link/APPLAB/v74/i8/p1171/s1].
  465. D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F.J. Sanchez, J. Diaz, and M. Razeghi, "High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN," Applied Physics Letters 74 (5) (February 1, 1999) [http://link.aip.org/link/APPLAB/v74/i5/p762/s1].
  466. M. Razeghi, D. Wu, B. Lane, A. Rybaltowski, A. Stein, J. Diaz, and H. Yi, "Recent achievement in MIR high power injection laser diodes (3 to 5 μm)," LEOS Newsletter 13 (1) (February 1, 1999).
  467. M. Razeghi, "Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century," SPIE Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344549].
  468. C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi, "Multi-color 4–20 μm In-P-based Quantum Well Infrared Photodetectors," SPIE Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344552].
  469. D. Walker, P. Kung, P. Sandvik, J. Wu, M. Hamilton, I.H. Lee, J. Diaz, and M. Razeghi, "AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates," SPIE Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344556].
  470. A. Saxler, M. Ahoujja, W.C. Mitchel, P. Kung, D. Walker, and M. Razeghi, "Electrical Characterization of AlxGa1-xN for UV Photodetector Applications," SPIE Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344558].
  471. P. Kung, D. Walker, P. Sandvik, M. Hamilton, J. Diaz, I.H. Lee and M. Razeghi, "Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth," SPIE Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344586].
  472. J.D. Kim, H. Mohseni, J.S. Wojkowski, J.J. Lee and M. Razeghi, "Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications," SPIE Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344571].
  473. J.S. Wojkowski, H. Mohseni, J.D. Kim, and M. Razeghi, "Demonstration of InAsSb/AlInSb Double Heterostructure Detectors for Room Temperature Operation in the 5–8 μm Wavelength Range," SPIE Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344573].
  474. S. Kim, M. Erdtmann, and M. Razeghi, "Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD," SPIE Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344572].
  475. H. Ohsato, T. Kato, T. Okuda and M. Razeghi, "Internal Stress Around Micropipes in 6H-SiC Substrates," SPIE Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344576].
  476. P. Kung, D. Walker, M. Hamilton, J. Diaz, and M. Razeghi, "Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates," Applied Physics Letters 74 (4) (January 25, 1999) [http://link.aip.org/link/?APPLAB/74/570/1].
  477. S. Slivken, V. Litvinov, M. Razeghi, and J.R. Meyer, "Relaxation kinetics in quantum cascade laser," Journal of Applied Physics 85 (2) (January 15, 1999) [http://link.aip.org/link/JAPIAU/v85/i2/p665/s1].
  478. S. Slivken, A. Matlis, C. Jelen, A. Rybaltowski, J. Diaz, and M. Razeghi, "High Temperature Continuous Wave Operation of ~8 μm Quantum Cascade Lasers," Applied Physics Letters 74 (2) (January 11, 1999) [http://link.aip.org/link/APPLAB/v74/i2/p173/s1].
  479. I.H. Lee, J.J. Lee, P. Kung, F.J. Sanchez, and M. Razeghi, "Band-gap narrowing and potential fluctuation in Si-doped GaN," Applied Physics Letters 74 (1) (January 4, 1999) [http://link.aip.org/link/APPLAB/v74/i1/p102/s1].
  480. H. Mohseni, V.I. Litvinov and M. Razeghi, "Interface-induced Suppression of the Auger Recombination in Type-II InAs/GaSb Superlattices," Physical Review B 58 (23) (December 15, 1998) [ http://link.aps.org/doi/10.1103/PhysRevB.58.15378].
  481. M. Razeghi, "Current Status and Future Trends of Infrared Detectors," Opto-Electronics Review 6 (3) (December 1, 1998).
  482. D. Wu and M. Razeghi, "Recent development in Sb-based MWIR interband laser diodes," Opto-Electronics Review 6 (3) (December 1, 1998).
  483. S. Slivken, V.I. Litvinov, M. Razeghi, and J.R. Meyer, "Relaxation kinetics in mid-infrared quantum cascade lasers," Opto-Electronics Review 6 (3) (December 1, 1998).
  484. J.D. Kim and M. Razeghi, "Investigation of InAsSb Infrared Photodetectors for Near Room Temperature Operation," Opto-Electronics Review 6 (3) (December 1, 1998).
  485. M. Razeghi, S. Slivken, A. Matlis, A. Rybaltowski, C. Jelen, and J. Diaz, "Low Threshold Quantum Cascade Lasers Grown by GSMBE," LEOS Newsletter 12 (6) (December 1, 1998).
  486. M. Razeghi, P. Kung, D. Walker, M. Hamilton, and P. Sandvik, "Development of High-performance III-Nitride-based Semiconductor Devices," International Symposium on the Physics of Semiconductors and Applications (ISPSA-98) Seoul, Korea; Proceedings (November 6, 1998).
  487. H. Mohseni and M. Razeghi, "Growth and Characterization of InAs/GaSb Type-II Superlattice for 8–12 μm Room Temperature Detectors," Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays Electrochemical Society Fall Meeting, Boston, MA; Proceedings 98 (21) (November 5, 1998).
  488. S. Kim and M. Razeghi, "Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD," Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays Electrochemical Society Fall Meeting, Boston, MA; Proceedings 98 (21) (November 5, 1998).
  489. M. Razeghi, P. Kung, D. Walker, M. Hamilton, and J. Diaz, "High quality LEO growth and characterization of GaN films on Al2O3 and Si substrates," SPIE International Conference on Solid State Crystals Zakopane, Poland; Proceedings 3725 (October 12, 1998) [http://dx.doi.org/10.1117/12.344718].
  490. M. Razeghi, J. Wojkowski, J.D. Kim, H. Mohseni and J.J. Lee, "Uncooled long-wavelength infrared photodetectors using narrow bandgap semiconductors," Symposium on Compound Semiconductors Nara, Japan; Proceedings (October 12, 1998).
  491. C. Jelen, S. Slivken, V. Guzman, M. Razeghi, and G. Brown, "InGaAlAs/InP Quantum Well Infrared Photodetectors for 8-20 μm Wavelengths," IEEE Journal of Quantum Electronics 34 (10) (October 1, 1998).
  492. S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen and M. Razeghi, "Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector," Applied Physics Letters 73 (7) (August 17, 1998) [http://link.aip.org/link/APPLAB/v73/i7/p963/s1].
  493. J.J. Lee, J.D. Kim, and M. Razeghi, "Room temperature operation of 8-12 μm InSbBi infrared photodetectors on GaAs substrates," Applied Physics Letters 73 (5) (August 3, 1998) [http://link.aip.org/link/APPLAB/v73/i5/p602/s1].
  494. C. Jelen, S. Slivken, T. David, M. Razeghi and G. J. Brown, "Noise performance of InGaAs/InP quantum well infrared photodetectors," IEEE Journal of Quantum Electronics 34 (7) (July 7, 1998).
  495. D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz and M. Razeghi, "Solar blind GaN p-i-n photodiodes," Applied Physics Letters 72 (25) (June 22, 1998) [http://link.aip.org/link/APPLAB/v72/i25/p3303/s1].
  496. S. Slivken and M. Razeghi, "8.5 μm Room Temperature Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy," SPIE Conference San Jose, CA, (January 28, 1998) [http://dx.doi.org/10.1117/12.298215].
  497. M. Razeghi, A. Saxler, P. Kung, D. Walker, X. Zhang, A. Rybaltowski, Y. Xiao, H.J. Yi and J. Diaz, "Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition," SPIE Conference San Jose, CA, Vol. 3284, pp. 113 (January 28, 1998) [http://dx.doi.org/10.1117/12.304463].
  498. A. Rogaski and M. Razeghi, "Narrow gap semiconductor photodiodes," SPIE Conference San Jose, CA, (January 28, 1998).
  499. P. Kung, X. Zhang, D. Walker, A. Saxler, and M. Razeghi, "GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio," SPIE Conference San Jose, CA, (January 28, 1998) [http://dx.doi.org/10.1117/12.304484].
  500. C. Jelen, S. Slivken, T. David, G. Brown, and M. Razeghi, "Responsivity and Noise Performance of InGaAs/InP Quantum Well Infrared Photodetectors," SPIE Conference San Jose, CA, (January 28, 1998) [http://dx.doi.org/10.1117/12.304470].
  501. H. Mohseni, E. Michel, M. Razeghi, W. Mitchel, and G. Brown, "Growth and characterization of InAs/GaSb Type-II superlattices for long-wavelength infrared detectors," SPIE Conference San Jose, CA, (January 28, 1998) [http://dx.doi.org/10.1117/12.304497].
  502. H.J. Lee, M.G. Cheong, E.K. Suh, and M. Razeghi, "Electrical Transport Properties of Highly Doped N-type GaN Epilayers," SPIE Conference San Jose, CA, (January 28, 1998) [http://dx.doi.org/10.1117/12.304496].
  503. M. Razeghi, A. Saxler, P. Kung, D. Walker, X. Zhang, K.S. Kim, H.R. Vydyanath, J. Solomon, M. Ahoujja, and W.C. Mitchel, "New Developments in III-Nitride Material and Device Applications," Physics of Semiconductor Devices Vol. 1, V. Kumar and S.K. Agarwal eds.,Narosa Publishing House, New Delhi, India, (January 1, 1998).
  504. M. Razeghi, "Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials," Physics of Semiconductor Devices Vol. 2 (V. Kumar and S.K. Agarwal eds.), Narosa Publishing House, New Delhi, India (January 1, 1998).
  505. P. Kung, A. Saxler, D. Walker, A. Rybaltowski, X. Zhang, J. Diaz, and M. Razeghi, "GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition," MRS Internet Journal of Nitride Semiconductor Research 3 (1) (January 1, 1998) [http://nsr.mij.mrs.org/3/1/].
  506. T. Kato, P. Kung, A. Saxler, C.J. Sun, H. Ohsato, M. Razeghi and T. Okuda, "Simultaneous growth of two differently oriented GaN epilayers on (11.0) sapphire (II) a growth model of (00.1) and (10.0) GaN," Journal of Crystal Growth 183 (January 1, 1998).
  507. E. Michel and M. Razeghi, "Recent advances in Sb-based materials for uncooled infrared photodetectors," Opto-Electronics Review 6 (1) (January 1, 1998).
  508. J.J. Lee and M. Razeghi, "Exploration of InSbBi for uncooled long-wavelength infrared photodetectors," Opto-Electronics Review 6 (1) (January 1, 1998).
  509. M. Razeghi and H. Yi, "High-Power Al-free InGaAsP/GaAs Near-Infrared Semiconductor Lasers," Opto-Electronics Review 6 (2) (January 1, 1998).
  510. Manijeh Razeghi, "GaN-Based Laser Diodes," International Journal of High Speed Electronics and Systems (IJHSES) Volume: 9, Issue: 4, pp. 1007-1080 (1998) (January 1, 1998) [http://dx.doi.org/10.1142/S0129156498000415].
  511. C. Jelen and M. Razeghi, "InP-based Multi-Spectral Quantum Well Infrared Photodetectors," International Semiconductor Device Research Symposium (ISDRS 97) Charlottesville, VA; Proceedings (December 11, 1997).
  512. S. Slivken and M. Razeghi, "Mid-Infrared Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy," International Semiconductor Device Research Symposium (ISDRS 97) Charlottesville, VA; Proceedings (December 11, 1997).
  513. A. Saxler, D. Walker, P. Kung, X. Zhang, M. Razeghi, J. Solomon, W. Mitchel, and H.R. Vydyanath, "Comparison of Trimethylgallium and Triethylgallium for the Growth of GaN," Applied Physics Letters 71 (22) (December 1, 1997) [http://link.aip.org/link/APPLAB/v71/i22/p3272/s1].
  514. J. Diaz, H. Yi, M. Razeghi and G.T. Burnham, "Long-term reliability of Al-free InGaAsP/GaAs λ = 808 nm) lasers at high-power high-temperature operation," Applied Physics Letters 71 (21) (November 24, 1997) [http://link.aip.org/link/APPLAB/v71/i21/p3042/s1].
  515. M. Razeghi, "Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive Optical Communication and Processing Applications," SPIE Conference Dallas, TX, (November 4, 1997) [http://dx.doi.org/10.1117/12.300921].
  516. S. Slivken, C. Jelen, A. Rybaltowski, J. Diaz and M. Razeghi, "Gas-Source Molecular Beam Epitaxy Growth of 8.5 μm Quantum Cascade Laser," Applied Physics Letters 71 (18) (November 1, 1997) [http://link.aip.org/link/APPLAB/v71/i18/p2593/s1].
  517. A. Rybaltowski, Y. Xiao, D. Wu, B. Lane, H. Yi, H. Feng, J. Diaz, and M. Razeghi, "High power InAsSb/InPAsSb/InAs mid-infrared lasers," Applied Physics Letters 71 (17) (October 27, 1997) [http://link.aip.org/link/APPLAB/v71/i17/p2430/s1].
  518. J.J. Lee, J.D. Kim, and M. Razeghi, "Long-Wavelength Infrared Photodetectors Based on InSbBi Grown on GaAs Substrates," Applied Physics Letters 71 (16) (October 20, 1997) [http://link.aip.org/link/APPLAB/v71/i16/p2298/s1].
  519. S. Slivken, C. Jelen, J. Diaz, and M. Razeghi, "High-Quality Quantum Cascade Lasers Grown by GSMBE," LEOS Newsletter 11 (5) (October 1, 1997).
  520. M. Razeghi, "The Center for Quantum Devices - extending the scope of photonics," III-Vs Review 10 (6) (October 1, 1997).
  521. M. Tadic, C. Jelen, S. Slivken, and M. Razeghi, "Photoresponse of InGaAsP-based p-doped quantum well infrared photodetectors," 21st International Conference on Microelectronics (MIEL97) Yugoslavia; Proceedings - Vol. 1 (September 14, 1997).
  522. M. Tadic, C. Jelen, S. Slivken, and M. Razeghi, "In-plane electron dynamics and hot electron effects in a quantum cascade laser," 21st International Conference on Microelectronics (MIEL97) Yugoslavia; Proceedings - Vol. 1 (September 14, 1997).
  523. H. Mohseni, E. Michel, J. Sandven, M. Razeghi, W. Mitchel, and G. Brown, "Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range," Applied Physics Letters 71 (10) (September 8, 1997) [http://dx.doi.org/10.1063/1.119906 ].
  524. E. Michel, H. Mohseni, J.D. Kim, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, R. Bredthauer, P. Vu, W. Mitchel, and M. Ahoujja, "High Carrier Lifetime InSb Grown on GaAs Substrates," Applied Physics Letters 71 (8 (August 25, 1997) [http://dx.doi.org/10.1063/1.119731 ].
  525. J.K. Lee, Y.H. Cho, B.D. Choe, K.S. Kim, H.I. Jeon, H. Lim and M. Razeghi, "Schottky barrier heights and conduction-band offsets of In1-xGaxAs1-yPy lattice matched to GaAs," Applied Physics Letters 71 (7) (August 18, 1997) [http://link.aip.org/link/APPLAB/v71/i7/p912/s1].
  526. H. Yi and M. Razeghi, "Generalized k·p perturbation theory for atomic-scale superlattices," Physical Review B 56 (7) (August 15, 1997) [http://link.aps.org/doi/10.1103/PhysRevB.56.3933].
  527. K.S. Kim, A. Saxler, P. Kung, M. Razeghi, and K.Y. Lim, "Determination of of Band Gap Energy of Al1-xInxN Grown by Metal Organic Chemical Vapor Deposition in the High Al Composition Regime," Applied Physics Letters 71 (6) (August 11, 1997) [http://link.aip.org/link/APPLAB/v71/i6/p800/s1].
  528. A. Saxler, P. Kung, X. Zhang, D. Walker, J. Solomon, W.C. Mitchel and M. Razeghi, "GaN Grown Using Trimethylgallium and Triethylgallium," Defects in Semiconductors Aveiro, Portugal; Materials Science Forum, 258-263 (July 1, 1997).
  529. A. Saxler, P. Kung, X. Zhang, D. Walker, J. Solomon, M. Ahoujja, W.C. Mitchel, H.R. Vydyanath, and M. Razeghi, "GaN Doped with Sulfur," Defects in Semiconductors Aveiro, Portugal; Materials Science Forum, 258-263 (July 1, 1997).
  530. A. Saxler, K.S. Kim, D. Walker, P. Kung, X. Zhang, G.J. Brown, W.C. Mitchel and M. Razeghi, "Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN," Defects in Semiconductors Aveiro, Portugal; Materials Science Forum, 258-263 (July 1, 1997).
  531. M. Erdtmann, S. Kim and M. Razeghi, "Localized Epitaxy for Vertical Cavity Surface Emitting Laser Applications," Defects in Semiconductors Aveiro, Portugal; Materials Science Forum, 258-263 (July 1, 1997).
  532. S. Kim, M. Erdtmann, and M. Razeghi, "The Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition," Defects in Semiconductors Aveiro, Portugal; Materials Science Forum, 258-263 (July 1, 1997).
  533. M. Razeghi, P. Kung, X. Zhang, D. Walker, A. Saxler, K.Y. Lim and K.S. Kim, "Structural and Microstructural Characterization of GaN Thin Films and GaN-based Heterostructures Grown on Sapphire Substrates," Journal of the Korean Physical Society Proceedings Supplement 30 (S1-S6) (June 30, 1997).
  534. H. Yi, A. Rybaltowski, J. Diaz, D. Wu, B. Lane, Y. Xiao, and M. Razeghi, "Stability of far fields in double heterostructure and multiple quantum well InAsSb/InPAsSb/InAs midinfrared lasers," Applied Physics Letters 70 (24) (June 16, 1997) [http://link.aip.org/link/APPLAB/v70/i24/p3236/s1].
  535. J.J. Lee, J.D. Kim, and M. Razeghi, "Growth and characterization of InSbBi for long wavelength infrared photodetectors," Applied Physics Letters 70 (24) (June 16, 1997) [http://link.aip.org/link/APPLAB/v70/i24/p3266/s1].
  536. W. Pan, D. Shahar, D.C. Tsui, H.P. Wei, and M. Razeghi, "Quantum Hall liquid-to-insulator transition in In1-xGaxAs/InP heterostructures," Physical Review B 55 (23) (June 15, 1997) [http://link.aps.org/doi/10.1103/PhysRevB.55.15431].
  537. B. Lane, D. Wu, H.J. Yi, J. Diaz, A. Rybaltowski, S. Kim, M. Erdtmann, H. Jeon and M. Razeghi, "Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure," Applied Physics Letters 70 (11) (April 17, 1997) [http://link.aip.org/link/APPLAB/v70/i11/p1447/s1].
  538. D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, and M. Razeghi, "AlxGa1-xN (0 ≤ x ≤ 1) Ultraviolet Photodetectors Grown on Sapphire by Metal-organic Chemical-vapor Deposition," Applied Physics Letters 70 (8) (February 24, 1997) [http://dx.doi.org/10.1063/1.118450].
  539. M. Razeghi and A. Rogalski,, "AlGaN ultraviolet detectors," SPIE Conference San Jose, CA, (February 12, 1997) [http://dx.doi.org/10.1117/12.271196].
  540. D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, and M. Razeghi, "Intrinsic AlGaN photodetectors for the entire compositional range," SPIE Conference San Jose, CA, (February 12, 1997) [http://dx.doi.org/10.1117/12.271200].
  541. C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi, "Very Long Wavelength GaAs/GaInP Quantum Well Infrared Photodetectors," SPIE Conference San Jose, CA, (February 12, 1997) [http://dx.doi.org/10.1117/12.271184].
  542. J.D. Kim, E. Michel, H. Mohseni, J. Wojkowski, J.J. Lee and M. Razeghi, "Sb-based infrared materials and photodetectors for the near room temperature applications," SPIE Conference San Jose, CA, Vol. 2999, pp. 55 (February 12, 1997) [http://dx.doi.org/10.1117/12.271212 ].
  543. H. Ohsato and M. Razeghi, "Growth models of GaN thin films based on crystal chemistry: Hexagonal and cubic GaN on Si substrates," SPIE Conference San Jose, CA, (February 12, 1997).
  544. M. Razeghi, H. Yi, J. Diaz, S. Kim, and M. Erdtmann, "Temperature insensitivity of the Al-free InGaAsP/GaAs lasers for λ = 808 and 908 nm," SPIE Conference San Jose, CA; Proceedings 3001 (February 12, 1997) [http://dx.doi.org/10.1117/12.273792].
  545. D. Wu, E. Kaas, J. Diaz, B. Lane, A. Rybaltowski, H.J. Yi, and M. Razeghi, "InAsSbP/InAsSb/InAs Diode Lasers Emitting at 3.2 μm Grown by Metalorganic Chemical Vapor Deposition," IEEE Photonics Technology Letters 9 (2) (February 1, 1997).
  546. B. Lane, D. Wu, A. Rybaltowski, H. Yi, J. Diaz, and M. Razeghi, "Compressively-strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition," Applied Physics Letters 70 (4) (January 27, 1997) [http://link.aip.org/link/APPLAB/v70/i4/p443/s1].
  547. C. Jelen, S. Slivken, J. Hoff, M. Razeghi, and G. Brown, "Aluminum free GaInP/GaAs Quantum Well Infrared Photodetectors for Long Wavelength Detection," Applied Physics Letters 70 (3) (January 20, 1997) [http://link.aip.org/link/APPLAB/v70/i3/p360/s1].
  548. J. Diaz, G. Lukas, D. Wu, S. Kim, M. Erdtmann, E. Kaas, and M. Razeghi, "InAsSbP/InAsSb/InAs Laser Diodes λ = 3.2 μm) Grown by Low-Pressure Metalorganic Chemical Vapor Deposition," Applied Physics Letters 70 (1) (January 6, 1997) [http://link.aip.org/link/APPLAB/v70/i1/p40/s1].
  549. M. Razeghi, J.D. Kim, C. Jelen, S. Slivken, E. Michel, H. Mohseni, J.J. Lee, J. Wojkowski, K.S. Kim, H.I. Jeon, and J. X, "Infrared Imaging Arrays Using Advanced III-V Materials and technology," IEEE Proceedings Advanced Workshop on Frontiers in Electronics (WOFE), Tenerife, Spain; (January 6, 1997) [http://dx.doi.org/10.1109/WOFE.1997.621147].
  550. H. Ohsato, T. Kato, M. Razeghi, and T. Okuda, "Epitaxial growth models of hexagonal and cubic GaN on (100) Si substrates," Bulletin of the Ceramic Society of Japan Ceramics Japan (January 1, 1997).
  551. T. Kato, P. Kung, A. Saxler, C.J. Sun, H. Ohsato, M. Razeghi and T. Okuda, "Morphology of Twinned GaN Grown on (11.0) Sapphire Substrates," Solid-State Electronics 41 (2) (January 1, 1997).
  552. T. Kato, H. Ohsato, T. Okuda, P. Kung, A. Saxler, C.J. Sun, and M. Razeghi, "Simultaneous growth of two different oriented GaN epilayers on (11.0) sapphire (I) morphology and orientation," Journal of Crystal Growth 173 (January 1, 1997).
  553. P. Kung, X. Zhang, A. Saxler, D. Walker, M. Razeghi, W. Qian, and V.P. Dravid, "MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density less than 107cm-2," Journal of European Ceramics Society 17 (January 1, 1997).
  554. C. Besikci, Y. Civan, S. Ozder, O. Sen, C. Jelen, S. Slivken, and M. Razeghi, "Gas Source Molecular Beam Epitaxy Growth and Characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs Modulation-doped Field-effect Transistor Structures," Semiconductor Science Technology 12 (January 1, 1997) [http://dx.doi.org/10.1088/0268-1242/12/11/025].
  555. M. Razeghi, J. Diaz, H.J. Yi, D. Wu, B. Lane, A. Rybaltowski, Y. Xiao, and H. Jeon, "High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 μm Range," Materials Research Society Symposium (December 2, 1996).
  556. C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi, "GaAs/GaInP Quantum Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging," Materials Research Society Symposium "Infrared Applications of Semiconductors-Materials, Processing and Devices"; Proceedings 450 (December 2, 1996).
  557. E. Michel, H. Mohseni, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, P. Vu, R. Bredthauer, W. Mitchel, and M. Ahoujja, "InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al2O3 Substrates," Materials Research Society Symposium (December 2, 1996).
  558. A. Saxler, M.A. Capano, W.C. Mitchel, P. Kung, X. Zhang, D. Walker and M. Razeghi, "High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates," Materials Research Society Symposium "III-V Nitrides"; Proceedings 449 (December 2, 1996).
  559. P. Kung, A. Saxler, D. Walker, X. Zhang, R. Lavado, K.S. Kim, and M. Razeghi, "AlGaN Based Materials and Heterostructures," Materials Research Society Symposium "III-V Nitrides"; Proceedings 449 (December 2, 1996).
  560. X. Zhang, P. Kung, A. Saxler, D. Walker, and M. Razeghi, "Observation of Room Temperature Surface-Emitting Stimulated Emission from GaN:Ge by Optical pumping," Journal of Applied Physics 80 (11) (December 1, 1996) [http://link.aip.org/link/JAPIAU/v80/i11/p6544/s1].
  561. H. Yi, J. Diaz, B. Lane, and M. Razeghi, "Optical losses of Al-free lasers for λ = 0.808 and 0.98 μm," Applied Physics Letters 69 (20) (November 11, 1996) [http://link.aip.org/link/APPLAB/v69/i20/p2983/s1].
  562. J.R. Hoff, M. Razeghi and G. Brown, "Effect of the spin split-off band on optical absorption in p-type Ga1 xInxAsyP1-y quantum-well infrared detectors," Physical Review B 54 (15) (October 15, 1996) [http://link.aps.org/doi/10.1103/PhysRevB.54.10773].
  563. M. Razeghi, X. Zhang, P. Kung, A. Saxler, D. Walker, K.Y. Lim, and K.S. Kim, "Recent advances in III-Nitride materials, characterization and device applications," SPIE Conference: Solid State Crystals in Optoelectronics and Semiconductor Technology; Proceedings 3179 (October 7, 1996) [http://dx.doi.org/10.1117/12.276195].
  564. P. Kung, A. Saxler, X. Zhang, D. Walker, R. Lavado, and M. Razeghi, "Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2substrates," Applied Physics Letters 69 (14) (September 30, 1996) [http://dx.doi.org/10.1063/1.116898].
  565. M. Razeghi, C. Jelen, S. Slivken and J. Hoff, "III-V interband and intraband far-infrared detectors," 23rd International Symposium on Compound Semiconductors St. Petersburg, Russia; Proceedings 155 (5) (September 23, 1996).
  566. S. Kim, M. Erdtmann, D. Wu, E. Kaas, H. Yi, J. Diaz, and M. Razeghi, "Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition," Applied Physics Letters 69 (11) (September 9, 1996) [http://link.aip.org/link/APPLAB/v69/i11/p1614/s1].
  567. J.D. Kim, E. Michel, S. Park, J. Xu, S. Javadpour and M. Razeghi, "Room Temperature Operation of InTlSb Infrared Photodetectors on GaAs," Applied Physics Letters 69 (3) (August 15, 1996) [http://dx.doi.org/10.1063/1.118054].
  568. X. Zhang, D. Walker, A. Saxler, P. Kung, J. Xu, and M. Razeghi, "Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition," IEEE Electronic Letters 32 (17) (August 15, 1996).
  569. X. Zhang, D. Walker, A. Saxler, P. Kung, J. Xu, and M. Razeghi, "Demonstration of an Electronic Grade Ti/AlN/Si Metal-Insulator-Semiconductor Capacitor," International Conference on Solid State Devices and Materials (SSDM '96) Yokohama, Japan; Proceedings (August 1, 1996).
  570. E. Michel, J. Kim, J. Xu, S. Javadpour, I. Ferguson, and M. Razeghi, "The Molecular Beam Epitaxial Growth of InSb on (111) GaAs," Applied Physics Letters 69 (2) (July 8, 1996) [http://dx.doi.org/10.1063/1.117376 ].
  571. H.J. Yi, J. Diaz, I. Eliashevich, G. Lukas, S. Kim, D. Wu, M. Erdtmann, C. Jelen, S. Slivken, L.J. Wang, and M. Razeghi, "Comparison of Gain and Threshold Current Density for InGaAsP/GaAs λ = 808 nm) Lasers with Different Quantum-Well Thickness," Journal of Applied Physics 79 (11) (July 1, 1996) [http://link.aip.org/link/JAPIAU/v79/i11/p8832/s1].
  572. M. Razeghi and A. Rogalski, "Semiconductor ultraviolet detectors," Journal of Applied Physics Applied Physics Review 79 (10) (May 15, 1996) [http://link.aip.org/link/JAPIAU/v79/i10/p7433/s1].
  573. E. Michel, J. Xu, J.D. Kim, I. Ferguson, and M. Razeghi, "InSb Infrared Photodetectors on Si Substrates Grown by Molecular Beam Epitaxy," IEEE Photonics Technology Letters 8 (5) pp. 673 (May 1, 1996) [http://dx.doi.org/10.1109/68.491591].
  574. D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, and M. Razeghi, "AlGaN ultraviolet photoconductors grown on sapphire," Applied Physics Letters 68 (15) (April 8, 1996) [http://link.aip.org/link/APPLAB/v68/i15/p2100/s1].
  575. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, "Aluminum nitride films on different orientations of sapphire and silicon," Journal of Applied Physics79 (5) (March 1, 1996) [http://link.aip.org/link/JAPIAU/v79/i5/p2439/s1].
  576. J. Hoff, C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi, "Optical Absorption and Photoresponse in fully Quaternary p-type Quantum Well Detectors," SPIE Photonics West '96 Photodetectors: Materials and Devices; Proceedings 2685 (January 27, 1996) [http://dx.doi.org/10.1117/12.237713].
  577. E. Michel, J.D. Kim, S. Park, J. Xu, I. Ferguson, and M. Razeghi, "Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range," SPIE Photonics West '96 'Photodetectors: Materials and Devices'; Proceedings 2685 (January 27, 1996) [http://dx.doi.org/10.1117/12.237694 ].
  578. M. Razeghi and A. Rogalski, "Semiconductor ultraviolet detectors," SPIE Photonics West '96 Photodetectors: Materials and Devices; Proceedings 2685 (January 27, 1996) [http://dx.doi.org/10.1117/12.237695].
  579. P. Kung, A. Saxler, X. Zhang, D. Walker, M. Razeghi, and M. Ulmer, "GaN, GaAlN, and AlN for use in UV Detectors for Astrophysics: An Update," SPIE Photonics West '96 Photodetectors: Materials and Devices; Proceedings 2685 (January 27, 1996) [http://dx.doi.org/10.1117/12.237696].
  580. A. Saxler, D. Walker, X. Zhang, P. Kung, J. Xu, and M. Razeghi, "UV photodetectors based on AlxGa1-xN grown by MOCVD," SPIE Photonics West '96 Photodetectors: Materials and Devices; Proceedings 2685 (January 27, 1996) [http://dx.doi.org/10.1117/12.237697].
  581. J.D. Kim, D. Wu, J. Wojkowski, J. Piotrowski, J. Xu, and M. Razeghi, "Long-Wavelength InAsSb Photoconductors Operated at Near Room Temperatures (200-300 K)," Applied Physics Letters. 68 (1), (January 1, 1996) [http://link.aip.org/link/APPLAB/v68/i1/p99/s1].
  582. J. Diaz, H. Yi, C. Jelen, S. Kim, S. Slivken, I. Eliashevich, M. Erdtmann, D. Wu, G. Lukas, and M. Razeghi, "High-Temperature Reliability of Aluminum-free 980nm and 808nm Laser Diodes," International Symposium on Compound Semiconductors (ISCS-22) Cheju Island, Korea; Compound Semiconductors 145 (8) (January 1, 1996).
  583. M. Razeghi, J.D. Kim, S.J. Park, Y.H. Choi, D. Wu, E. Michel, J. Xu, and E. Bigan, "New Infrared Materials and Detectors," International Symposium on Compound Semiconductors (ISCS-22) Cheju Island, Korea; Compound Semiconductors 145 (8) (January 1, 1996).
  584. J. Hoff, J. Piotrowski, E. Bigan, M. Razeghi, and G.J. Brown, "Background limited performance in p-doped quantum well intersubband photodetectors," International Symposium on Compound Semiconductors (ISCS-22) Cheju Island, Korea; Compound Semiconductors 145 (8) (January 1, 1996).
  585. D. Walker, P. Kung, A. Saxler, X. Zhang, and M. Razeghi, "GaN Based Semiconductors for Future Optoelectronics," International Symposium on Compound Semiconductors (ISCS-22) Cheju Island, Korea; Compound Semiconductors 145 (8) (January 1, 1996).
  586. M. Razeghi, J. Hoff, M. Erdtmann, S. Kim, D. Wu, E. Kaas, C. Jelen, S. Slivken, I. Eliashevich, J. Diaz, E. Bigan, G.J. Brown, S. Javadpour, "MOCVD Growth of Ga1-xInxAsyP1-y-GaAs Quantum Structures," NATO 2nd International Workshop on Heterostructures Epitaxy and Devices (HEAD '95) Smolenice Castle Slovakia; Heterostructure Epitaxy and Devices (January 1, 1996).
  587. A. Rogalski and M. Razeghi, "Semiconductor ultraviolet photodetectors," Opto-Electronics Review 4 (1/2) (January 1, 1996).
  588. P. Kung, X. Zhang, D. Walker, A. Saxler, J. Piotrowski, A. Rogalski, and M. Razeghi, "Kinetics of photoconductivity in n-type GaN photodetector," Applied Physics Letters 67 (25) (December 18, 1995) [http://link.aip.org/link/APPLAB/v67/i25/p3792/s1].
  589. J.M. Redwing, J.S. Flynn, M.A. Tischler, W. Mitchel, and A. Saxler, "MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures," Proceedings of Materials Research Society Boston, MA Gallium Nitride and related Materials; Proceedings 395 (November 27, 1995).
  590. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, "The Microstructural Study of Aluminum Nitride Thin Films: Epitaxy on the Two Orientations of Sapphire and Texturing on Si," Proceedings of Materials Research Society Boston, MA; Gallium Nitride and related Materials; Proceedings 395 (November 27, 1995).
  591. D. Walker, X. Zhang, P. Kung, A. Saxler, J. Xu and M. Razeghi, "Spectral response on GaN p-n junction photovoltaic structures," Proceedings of Materials Research Society Boston, MA; Gallium Nitride and related Materials; Proceedings 395 (November 27, 1995).
  592. X. Zhang, P. Kung, D. Walker, A. Saxler, and M. Razeghi, "Growth of GaN without yellow luminescence," Proceedings of Materials Research Society Boston, MA; Gallium Nitride and related Materials; Proceedings 395 (November 27, 1995).
  593. J.D. Kim, S. Kim, D. Wu, J. Wojkowski, J. Xu, J. Piotrowski, E. Bigan, and M. Razeghi, "8-13 μm InAsSb heterojunction photodiode operating at near room temperature," Applied Physics Letters 67 (18) (October 30, 1995) [http://link.aip.org/link/APPLAB/v67/i18/p2645/s1].
  594. X. Zhang, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler, and M. Razeghi, "Photovoltaic effects in GaN structures with p-n junction," Applied Physics Letters 67 (14) (October 2, 1995) [http://link.aip.org/link/APPLAB/v67/i14/p2028/s1].
  595. X. Zhang, P. Kung, A. Saxler, D. Walker, T.C. Wang, and M. Razeghi, "Growth of AlxGa1-xN:Ge on sapphire and silicon substrates," Applied Physics Letters 67 (12) (September 18, 1995) [http://dx.doi.org/10.1063/1.115036].
  596. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, "Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon," Proceedings of Symposium F Materials Research Society (MRS), Boston, MA (September 1, 1995).
  597. M. Razeghi, "InGaAsP-based High Power Laser Diodes," Optics and Photonics News (August 1, 1995).
  598. J. Hoff, X. He, M. Erdtmann, E. Bigan, M. Razeghi, and G.J. Brown, "p-doped GaAs/Ga0.51In0.49P quantum well intersub-band photodetectors," Journal of Applied Physics 78 (3) (August 1, 1995) [http://link.aip.org/link/JAPIAU/v78/i3/p2126/s1].
  599. J. Hoff, S. Kim, M. Erdtmann, R. Williams, J. Piotrowski, E. Bigan, M. Razeghi and G. Brown, "Background Limited Performance in p-doped GaAs/Ga[0.71]In[0.29]As[0.39]P[0.61] Quantum Well Infrared Photodetectors," Applied Physics Letters 67 (1) (July 3, 1995) [http://link.aip.org/link/APPLAB/v67/i1/p22/s1].
  600. H. Yi, J. Diaz, L.J. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev and M. Razeghi, "Optimized structure for InGaAsP/GaAs 808nm high power lasers," Applied Physics Letters 66 (24) (June 12, 1995) [http://link.aip.org/link/APPLAB/v66/i24/p3251/s1].
  601. I. Eliashevich, J. Diaz, H. Yi, L. Wang, and M. Razeghi, "Reliability of Aluminum-Free 808 nm High-Power Laser Diodes with Uncoated Mirrors," Applied Physics Letters 66 (23) (June 5, 1995) [http://link.aip.org/link/APPLAB/v66/i23/p3087/s1].
  602. P. Kung, A. Saxler, X. Zhang, D. Walker, T.C. Wang, I. Ferguson, and M. Razeghi, "High quality AlN and GaN epilayers grown on (00*1) sapphire, (100) and (111) silicon substrates," Applied Physics Letters 66 (22) (May 29, 1995) [http://link.aip.org/link/APPLAB/v66/i22/p2958/s1].
  603. X. Zhang, P. Kung, A. Saxler, D. Walker, T. Wang, and M. Razeghi, "Photoluminescence study of GaN," Acta Physica Polonica A 88 (4) (May 29, 1995).
  604. M. Razeghi, I. Eliashevich, J. Diaz, H.J. Yi, S. Kim, M. Erdtmann, D. Wu, and L.J. Wang, "High Power Aluminum-free InGaAsP/GaAs Pumping Diode Lasers," Materials Science and Engineering B 35 (May 8, 1995).
  605. P.M. Lundquist, W.P. Lin, G.K. Wong, M. Razeghi, and J.B. Ketterson, "Second harmonic generation in hexagonal silicon carbide," Applied Physics Letters 66 (15) (April 10, 1995) [http://link.aip.org/link/APPLAB/v66/i15/p1883/s1].
  606. G. Singh, E. Michel, C. Jelen, S. Slivken, J. Xu, P. Bove, I. Ferguson, and M. Razeghi, "Molecular Beam Epitaxial Growth of High Quality InSb for p-i-n Photodetectors," Journal of Vacuum Science and Technology B 13 (2) (March 1, 1995) [http://dx.doi.org/10.1109/68.491591 ].
  607. M. Ulmer, M. Razeghi, and E. Bigan, "Ultraviolet Detectors for AstroPhysics Present and Future," Optoelectronic Integrated Circuit Materials Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 239 (February 6, 1995) [http://dx.doi.org/10.1117/12.206870].
  608. J. Piotrowski and M. Razeghi, "Improved performance of IR photodetectors with 3D gap engineering," Optoelectronic Integrated Circuit Materials Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397 (February 6, 1995) [http://dx.doi.org/10.1117/12.206868].
  609. J. Diaz, H. Yi, S. Kim, M. Erdtmann, L.J. Wang, I. Eliashevich, E. Bigan and M. Razeghi, "Investigation of 0.8 μm InGaAsP-GaAs laser diodes with Multiple Quantum Wells," Optoelectronic Integrated Circuit Materials Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397 (February 6, 1995) [http://dx.doi.org/10.1117/12.206931].
  610. E. Michel, R. Peters, S. Slivken, C. Jelen, P. Bove, J. Xu, I. Ferguson, and M. Razeghi, "Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si," Optoelectronic Integrated Circuit Materials Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397 (February 6, 1995) [http://dx.doi.org/10.1117/12.206888].
  611. J. Hoff, E. Bigan, G.J. Brown, and M. Razeghi, "Aluminum-free Quantum Well Intersubband Photodetectors with p-type GaAs Wells and lattice-matched ternary and quaternary barriers," Optoelectronic Integrated Circuit Materials Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397 (February 6, 1995) [http://dx.doi.org/10.1117/12.206893].
  612. P. Kung, X. Zhang, E. Bigan, and M. Razeghi, "Low pressure metalorganic chemical vapor deposition of high quality AlN and GaN thin films on sapphire and silicon substrates," Optoelectronic Integrated Circuit Materials Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397 (February 6, 1995) [http://dx.doi.org/10.1117/12.206881].
  613. H. Yi, J. Diaz, I. Eliashevich, M. Stanton, M. Erdtmann, X. He, L. Wang, and M. Razeghi, "Temperature dependence of threshold current density Jth and differential efficiency of High Power InGaAsP/GaAs ( λ = 0.8 μm) lasers," Applied Physics Letters 66 (3) (January 16, 1995) [http://link.aip.org/link/APPLAB/v66/i3/p253/s1].
  614. S. Elhamri, M. Ahoujja, K. Ravindran, D.B. Mast, R.S. Newrock, W.C. Mitchel, G.J. Brown, I. Lo, M. Razeghi and X. He, "Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells," Applied Physics Letters 66 (2) (January 9, 1995) [http://link.aip.org/link/APPLAB/v66/i2/p171/s1].
  615. M. Razeghi, Y.H. Choi, X. He, and C.J. Sun, "Exploration of entire range of III-V semiconductors and their device applications," Materials Science and Technology 11 (January 1, 1995).
  616. T. Kato, H. Ohsato, M. Razeghi, and T. Okuda, "Defects of 6H-SiC substrates made by Acheson's method and by modified Lely's method," Proceedings - Silicon Carbide and Related Materials Conference Kyoto, Japan; Institute of Physics Conference Seris 142 (2) (January 1, 1995).
  617. J. Hoff, C. Jelen, S. Slivken, E. Bigan, M. Razeghi, and G.J. Brown, "Analysis of Spectral Response in p-type GaAs/GaInP QWIPs," Superlattices and Microstructures 8 (4) (January 1, 1995).
  618. E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, and M. Razeghi, "Molecular Beam Epitaxial Growth of High Quality InSb," Applied Physics Letters 65 (26) (December 26, 1994) [http://link.aip.org/link/APPLAB/v65/i26/p3338/s1].
  619. X.G. He, M. Erdtmann, R. Williams, S. Kim, and M. Razeghi, "The correlation between x-ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices," Applied Physics Letters 65 (22) (November 28, 1994) [http://link.aip.org/link/APPLAB/v65/i22/p2812/s1].
  620. C. Besikci, Y.H. Choi, G. Labeyrie, E. Bigan and M. Razeghi with J.B. Cohen, J. Carsello, and V.P. Dravid, "A detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by metalorganic chemical vapor deposition," Journal of Applied Physics 76 (10) (November 15, 1994) [http://link.aip.org/link/JAPIAU/v76/i10/p5820/s1].
  621. H.J. Yi, I. Eliashevich, J. Diaz, L.J. Wang, and M. Razeghi, "Theoretical Investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers," IEEE/LEOS Photonics East Conference Boston, MA; Proceedings, Vol. 2, SL 13.4 (October 31, 1994).
  622. J. Diaz, I. Eliashevich, H.J. Yi, L.J. Wang, and M. Razeghi, "Optimization of InGaAsP/GaAs Laser Diode Processing for High-Power Operation," IEEE/LEOS Photonics East Conference Boston, MA; Proceedings, Vol. 2, SL 13.3 (October 31, 1994).
  623. J. Diaz, I. Eliashevich, H.J. Yi, M. Stanton, and M. Razeghi, "Theoretical investigation of minority carrier leakage of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodes," Applied Physics Letters 65 (18) (October 31, 1994) [http://link.aip.org/link/APPLAB/v65/i18/p2260/s1].
  624. W. C. Mitchel, G.J. Brown, I. Lo, S. Elhamri, M. Aboujja, K. Ravindran, R.S. Newrock, M. Razeghi, and X. He, "Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells," Applied Physics Letters 65 (12) (September 19, 1994) [http://link.aip.org/link/APPLAB/v65/i12/p1578/s1].
  625. J. Hoff, C. Jelen, S. Slivken, E. Michel, O. Duchemin, E. Bigan, and M. Razeghi with G. Brown and S.M. Hegde (Wright Laboratory), "Intersubband hole absorption in GaAs-GaInP Quantum Wells grown by Gas Source Molecular Beam Epitaxy," Applied Physics Letters 65 (9) (August 29, 1994) [http://link.aip.org/link/APPLAB/v65/i9/p1130/s1].
  626. J. Diaz, I. Eliashevich, X. He, H. Yi, L. Wang, E. Kolev, D. Garbuzov, and M. Razeghi, "High-power InGaAsP/GaAs 0.8 μm laser diodes and peculiarities of operational characteristics," Applied Physics Letters 65 (8) (August 22, 1994) [http://link.aip.org/link/APPLAB/v65/i8/p1004/s1].
  627. C. Besikci and M. Razeghi, "On the Description of the Collision Terms in Three-Valley Hydrodynamic Models for GaAs Device Modeling," IEEE Transactions on Electron Devices 41 (8) (August 1, 1994).
  628. J. Diaz, H.J. Yi, M. Erdtmann, X. He, E. Kolev, D. Garbuzov, E. Bigan, and M. Razeghi, "Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metal-organic chemical vapor deposition," Journal of Applied Physics 76 (2) (July 15, 1994) [http://link.aip.org/link/JAPIAU/v76/i2/p700/s1].
  629. C.J. Sun, P. Kung, A. Saxler, H. Ohsato, E. Bigan, M. Razeghi, and D.K. Gaskill, "Thermal stability of GaN thin films grown on (0001) Al2O3, (0112) Al2O3 and (0001)Si 6H-SiC substrates," Journal of Applied Physics 76 (1) (July 1, 1994) [http://link.aip.org/link/JAPIAU/v76/i1/p236/s1].
  630. M. Razeghi, "High-power laser diodes based on InGaAsP alloys," Nature Vol.369, p.631-633 (June 23, 1994) [http://www.nature.com/nature/journal/v369/n6482/abs/369631a0.html].
  631. C. Besikci and M. Razeghi, "Electron Transport Properties of Ga[0.51]In[0.49]P for Device Applications," IEEE Transactions on Electron Devices 41 (6) (June 1, 1994).
  632. P. Kung, C.J. Sun, A. Saxler, H. Ohsato, and M. Razeghi, "Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates," Journal of Applied Physics 75 (9) (May 1, 1994) [http://link.aip.org/link/JAPIAU/v75/i9/p4515/s1].
  633. C.J. Sun, P. Kung, A. Saxler, H. Ohsato, M. Razeghi, and K. Haritos, "A Crystallographic Model of (00*1) Aluminum Nitride Epitaxial Thin Film Growth on (00*1) Sapphire Substrate," Journal of Applied Physics 75 (8) (April 15, 1994) [http://dx.doi.org/10.1063/1.109862].
  634. Y.H. Choi, P. Staveteig, E. Bigan, and M. Razeghi, "Characterization of InTlSb/InSb Grown by Low Pressure Metalorganic Chemical Vapor Deposition on GaAs Substrat," Journal of Applied Physics 75 (6) (March 15, 1994) [http://link.aip.org/link/JAPIAU/v75/i6/p3196/s1].
  635. C. Jelen, S. Slivken, X.G. He, and M. Razeghi and S. Shastry, "Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy," Journal of Vacuum Science and Technology B 12 (2) (March 1, 1994) [http://dx.doi.org/10.1116/1.587059].
  636. J. Diaz, I. Eliashevich, K. Mobarhan, L.J. Wang, D.Z. Garbuzov, and M. Razeghi, "InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metalorganic chemical vapor deposition," IEEE Photonics Technology Letters 6 (2) (February 1, 1994).
  637. P.T. Staveteig, Y.H. Choi, G. Labeyrie, E. Bigan, and M. Razeghi, "Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition," Applied Physics Letters 64 (4) (January 24, 1994) [http://link.aip.org/link/APPLAB/v64/i4/p460/s1].
  638. E. Bigan, Y.H. Choi, G. Labeyrie, and M. Razeghi, "InTlSb alloys for infrared detection," Proceedings SPIE Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, Vol. 2145 (January 24, 1994) [http://dx.doi.org/10.1117/12.177130].
  639. A. Saxler, P. Kung, C.J. Sun, E. Bigan and M. Razeghi, "High Quality Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates," Applied Physics Letters 64 (3) (January 17, 1994) [http://dx.doi.org/10.1063/1.111168].
  640. C.J. Sun, P. Kung, A. Saxler, H. Ohsato, and M. Razeghi, "AlxGa1-xN Grown on (00*1) and (01*2) Sapphire," Proceedings of the 5th International Conference on Silicon Carbide and Related Materials Washington, DC (November 1, 1993).
  641. Y.H. Choi, G. Labeyrie, P.T. Staveteig, E. Bigan, and M. Razeghi, "The Effects of V/III Ratio on Optical, Electrical and Structural Properties of InAs0.3Sb0.7Grown by LP-MOCVD," Electrochemical Society Conference New Orleans, LA; Proceedings, 94-5, Long Wavelength Infrared Detectors and Arrays: Physics and Applications, F. Radpour and V.R. McCrary (eds.) (October 15, 1993).
  642. Y.H. Choi, P.T. Staveteig, E. Bigan, and M. Razeghi, "In1- x TlxSb for Long-Wavelength Infrared Photodetectors," Electrochemical Society Conference New Orleans, LA; Proceedings, Vol. 94-5 (October 10, 1993).
  643. C.J. Sun and M. Razeghi, "Comparison of the Physical Properties of GaN Thin Films Deposited on (0112) and (0001) Sapphire Substrates," Applied Physics Letters 63 (7) (August 16, 1993) [http://link.aip.org/link/APPLAB/v63/i7/p973/s1].
  644. S.N. Song, J.B. Ketterson, Y.H. Choi, R. Sudharsanan, and M. Razeghi, "Transport properties in n-type InSb films grown by metalorganic chemical vapor deposition," Applied Physics Letters 63 (7) (August 16, 1993) [http://apl.aip.org/applab/v63/i7/p964_s1].
  645. Y.H. Choi, R. Sudharsanan, C, Besikci, and M. Razeghi, "Growth of In1-xTlxSb, a New Infrared Material, by Low-Pressure Metalorganic Chemical Vapor Deposition," Applied Physics Letters 63 (3) (July 19, 1993) [http://dx.doi.org/10.1063/1.110043 ].
  646. K. Mobarhan, C. Jelen, E. Kolev, and M. Razeghi, "GaInAsP/InP 1.35 μm Double Heterostructure Laser Grown on Silicon Substrate by Metalorganic Chemical Vapor Deposition," Journal of Applied Physics 74 (1) (July 1, 1993) [http://link.aip.org/link/JAPIAU/v74/i1/p743/s1].
  647. C. Besikci, Y.H. Choi, R. Sudharsanan, and M. Razeghi, "Anomalous Hall Effect in InSb Layers Grown by MOCVD on GaAs Substrates," Journal of Applied Physics 73 (10) (May 15, 1993) [http://link.aip.org/link/JAPIAU/v73/i10/p5009/s1].
  648. Xiaoguang He and Manijeh Razeghi, "Investigation of the Heteroepitaxial Interfaces in the GaInP/GaAs Superlattices by High Resolution X-Ray Diffraction and Dynamical Solutions," Journal of Applied Physics 73 (7) (April 1, 1993) [http://link.aip.org/link/JAPIAU/v73/i7/p3284/s1].
  649. Xiaoguang He and Manijeh Razeghi, "Well Resolved Room Temperature Photovoltage Spectra of GaAs-GaInP Quantum Wells and Superlattices," Applied Physics Letters 62 (6) (February 8, 1993) [http://dx.doi.org/10.1063/1.108874 ].
  650. C. Francis, M.A. Bradley, P. Boucaud, F.H. Julien and M. Razeghi, "Intermixing of GaInP/GaAs Multiple Quantum Wells," Applied Physics Letters 62 (2) (January 11, 1993) [http://dx.doi.org/10.1063/1.109363 ].
  651. Razeghi M., S. Koch, R.J. Hang, K.V. Klitzing, K. Ploog, "Finite-Size Scaling in the Dissipative Transport Regime Between Quantum Hall Plateaus," Physical Review (January 1, 1993).
  652. Razeghi M., S. Koch, R.J. Hang, K.V. Klitzing, "Splitting of the Landau Level Coincidence: A Novel Phase Transition in Tilted Magnetic Fields," Physical Review (January 1, 1993).
  653. C. Jelen, S. Charriere, M. Razeghi, and V.J. Leppert, "Growth of InSb/GaAs layers on YIG-coated GGG substrate," Mat. Res. Soc. Symp. Proc. Vol. 281 (January 1, 1993).
  654. K. Mobarhan, M. Razeghi, G. Marquebielle and E. Vassilaki, "High Power 0.98 μm GaInAs/GaAs/GaInP Multiple Quantum Well Laser," Journal of Applied Physics 72 (9) (November 1, 1992) [http://link.aip.org/link/JAPIAU/v72/i9/p4447/s1].
  655. Y.H. Choi, R. Sudharsanan, C. Besikci, E. Bigan, and M. Razeghi, "High Quality InSb Epitaxial Film Grown by Low Pressure Metalorganic Chemical Vapor Deposition," Proceeding of Materials Research Society Conference Proceedings Vol. 281 (November 1, 1992).
  656. H. Xiaoguang, M. Razeghi, "Optical Investigations of GaAs-GaInP Quantum Wells Grown on the GaAs, InP, and Si Substrates," Applied Physics Letters 61 (14) (October 5, 1992) [http://link.aip.org/link/APPLAB/v61/i14/p1703/s1].
  657. M. Razeghi, R. Sudharsanan, and J.C.C. Fan, "Frontiers of Monolithic Integration of Semiconductor III-V Optoelectronic Devices with Si Technology," Proceedings of International Conference on Solid State Devices and Materials Tsukuba, Japan (August 1, 1992).
  658. K. Mobarhan, M. Razeghi and R. Blondeau, "GaInAs/GaAs/GaInP Buried Ridge Structure Single Quantum Well Laser Emitting at 0.98 μm," IEEE Electronics Letters 28 (16) (July 30, 1992).
  659. Razeghi M., D. Yang, J.W. Garland, Z. Zhang, D. Xue, "Evaluation of the Band Offsets of GaAs-GaInP Multilayers by Electroreflectance," SPIE Proceedings Vol. 1676, pp. 130 (January 1, 1992) [http://dx.doi.org/10.1117/12.137652 ].
  660. Acher O., Omnes F., Razeghi M., Drevillion B., "Caracterisation optique des semiconducteurs III-V par ellipsometrie et reflectance differentielle spectroscopique," Thomson-CSF Revue Technique Vol. 23, No. 3, (September 1, 1991).
  661. Razeghi M., and M.A. di Forte-Poisson, "Incorporation of Impurities in GaAs Grown by MOCVD," Thomson-CSF Revue Technique Vol. 23, No. 3 (September 1, 1991).
  662. Omnes F., Defour M., Razeghi M., "Etude du dopage de type n et p des materiaux GaAs et GaInP," Thomson-CSF Revue Technique Vol. 23, No. 3 (September 1, 1991).
  663. Omnes F., and Razeghi M., "GaAs-GaInP Multipayers for High Performance Electronic Devices," Thomson-CSF Revue Technique Vol. 23, No. 3 (September 1, 1991).
  664. Omnes F., and Razeghi M., "A Review of the Band Offsets Measurements in the GaAs/Ga0.49In0.51P System," Thomson-CSF Revue Technique Vol. 23, No. 3 (September 1, 1991).
  665. Omnes F., and Razeghi M., "Optical Investigations of GaAs-GaInP Quantum Wells and Superlattices Grown by Metalorganic Chemical Vapor Deposition," Applied Physics Letters 59 (9) p. 1034 (May 28, 1991) [http://link.aip.org/link/APPLAB/v59/i9/p1034/s1].
  666. Feng S.L., Bourgoin J.C., Omnes F., and Razeghi M., "Defects in Organometallic Vapor-Phase Epitaxy-Grown GaInP Layers," Applied Physics Letters 59 (8) p. 941 (May 28, 1991) [http://link.aip.org/link/?APL/59/941].
  667. Julien F.H., Bradley M., Rao E.V.K., Razeghi M., Goldstein L., "InGaAs(P)/InP MQW Mixing by Zn Diffusion Ge and S Implantation for Optoelectronic Applications,," Optical and Quantum Electronics 23 (November 30, 1990).
  668. Feng S.L., Bourgoin J.C., and Razeghi M., "Defects in High Purity GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition," Semiconductor Science and Technology 6 pp. 229-230 (November 30, 1990).
  669. Razeghi M., "Recent Advances in MOCVD Growth of GaAs/GaInP System for OEICs Applications," Proceeding of the 7th International Conference on Vapor Growth and Epitaxy Nagoya, Japan (November 30, 1990).

Conferences & Conference Proceedings

  1. Keynote Speaker , IWPSD 2017 , Delhi, New Delhi, India -- December 11, 2017, [www.iwpsd.in].
  2. Keynote Speaker , World Congress on Nano Science & Technology , Japan -- October 24, 2017, [http://www.bitcongress.com/nano2017/].
  3. Keynote Speaker , Annual Conference of Quantum World - CQW 2017 , Changsha, China -- October 16, 2017.
  4. Keynote Speaker , 2016 EuMW THz WORKSHOP , Nuenberg, Germany -- October 8, 2017, [http://www.eumweek.com/].
  5. Organizing Commitee Member , Polymer-Science 2017 , Chicago, IL. -- October 2, 2017, [http://polymerscience.conferenceseries.com/].
  6. Keynote Speaker , 2017 Fall E-MRS Meeting , Warsaw, Poland -- September 18, 2017, [http://www.european-mrs.com/meetings/2017-fall-meeting].
  7. Organizing Commitee Member , International Conference on Optometry and Vision Science , Paris, France -- September 11, 2017, [http://bit.ly/2izH8Kb].
  8. Keynote Speaker , Material & Science Engineering 2017 , Barcelona, Spain -- August 24, 2017, [http://www.worldmaterialsconference.com/].
  9. Organizing Committee Member and Keynote Speaker , Advanced Material and Processing Conference , Edinburgh, Scotland -- August 16, 2017, [http://materials.conferenceseries.com/].
  10. Keynote Speaker , SPIE 2017 - Optics & Photonics , San Diego, CA. -- August 6, 2017, [http://spie.org/OPN/conferencedetails/active-photonic-materials].
  11. Organizing Commitee Member , International Conference on Laser Optics , Milan, Italy -- July 31, 2017, [http://laser-technology.conferenceseries.com/call-for-abstracts.php].
  12. Keynote Speaker , World Congress & Expo on Optometry and Vision Science , Chicago, IL. -- July 17, 2017, [http://optometry.conferenceseries.com/america/].
  13. Keynote Speaker, "Recent progress in Quantum Devices from deep UV (0.2) to THZ (300 microns) at Center for Quantum Devices" , 2017 Light Conference , Changshun, China -- July 16, 2017.
  14. Keynote Speaker, , 7th Euro Biosensors & Bioelectronics Conference , Berlin, Germany -- July 10, 2017, [http://biosensors.conferenceseries.com/europe/].
  15. Keynote Speaker , International Conference on Nanophotonics, Women, Education & Photonics Session , Recife, Brazil -- July 2, 2017, [http://www.icnp2017.org/principal/].
  16. Keynote Speaker , OPTICS 2017 - World Congress on Laser Optics & Photonics , Valencia, Spain -- June 19, 2017, [http://scientificfederation.com/optics-photonics-2017/].
  17. Keynote Speaker , WCAM-2017 , Xian, China -- June 14, 2017.
  18. Organizing Commitee Member , 8th World Congress on Materials Science & Engineering , Rome, Italy -- June 12, 2017, [http://materialsscience.conferenceseries.com/europe/].
  19. Keynote Speaker , International Congress on Opthalmology and Optometry , Malaysia -- May 25, 2017, [https://www.clytoaccess.com/international-conference-ophthalmology-and-optometry-research].
  20. Keynote Speaker , Meeting on Low Dimensional Systems: RIAPA-LDS 2017 , Tabriz, Iran -- May 23, 2017, [http://riapa.tabrizu.ac.ir/en/page/5993/annual-international-meeting-on-low-dimensional-systems-2017].
  21. Keynote Speaker , PIERS-2017, Progress in Electromagnetics Research Symposium , St. Petersburg, Russia -- May 22, 2017, [ http://piers.org/piers2017StPetersburg/].
  22. Organizing Commitee Member , International Conference on Quantum Physics and Nuclear Energy , Munich, Germany -- May 15, 2017, [http://quantumphysics.conferenceseries.com/].
  23. Keynote Speaker, "Broadband, Tunable, and Monolithic Quantum Cascade Lasers" , CLEO , San Jose, CA. -- May 14, 2017.
  24. Keynote Speaker , EMN (Energy, Materials, and Nanotechnology) Summer Meeting - 2017 , Havana, Cuba -- May 4, 2017, [http://emnmeeting.org/Americas/emn-summer/].
  25. Keynote Speaker , EMN (Energy, Materials, and Nanotechnology) Optoelectronics Meeting , Victoria, Canada -- April 17, 2017, [http://emnmeeting.org/Americas/optoelectronics/.].
  26. Keynote Speaker, "Atomic engineering of III-V semiconductor for Quantum Devices from Deep UV( 200nm) up to THZ( 300 microns)" , Emerging Optical Materials Workshop , Boston, MA. -- April 12, 2017, [http://www.bostonphotonics.org/workshops/EOM17/].
  27. Keynote Speaker, "Recent Advances in Antimonide-based Gap-engineered Type-II Superlattices Material System for 2 and 3 colors Infrared Imagers" , SPIE DSS 2017 , Anaheim, CA. -- April 9, 2017, [www.spie.org/ds100].
  28. Plenary Speaker, , INASE Conference , Athens, Greece -- April 9, 2017, [http://inase.org].
  29. Keynote Speaker , ICREPQ'17 - International Conference on Renewable Energies and Power Quality , Malaga, Spain -- April 4, 2017.
  30. Keynote Speaker, "Current status and future perspective of room temperature, high power, widely tunable THz DFG QCL sources" , EMN (Energy, Materials, and Nanotechnology) Meeting Terahertz 2017 , Honolulu, Hawaii -- April 1, 2017, [http://emnmeeting.org/Americas/terahertz/].
  31. Organizing Commitee Member and Plenary Speaker , SMART 2017 - 3rd Annual Conference on Smart Materials and Structures , Orlando, FL. -- March 20, 2017, [http://smartmaterials-structures.conferenceseries.com/].
  32. Keynote Speaker, "Quantum Engineering of III-V semiconductor and their application of daily life" , Bradley Department of ECE Seminar at Virginia Tech , Blacksburg, VA. -- March 17, 2017.
  33. Plenary Speaker, , WSEAS - Conference on Nanotechnology , Cambridge, UK -- February 24, 2017, [http://www.wseas.org/cms.action?id=13972].
  34. Keynote Speaker , Materials Research 2017 - 7th Annual Congress on Materials Research and Technology , Berlin, Germany -- February 20, 2017.
  35. Keynote Speaker, "Contribution to the World of Photonics by Atomic Engineering of III-V Semiconductor for Quantum Devices from deep UV to THz (200 nm to 300 microns)" , SPIE 2017 Photonics West Conference , San Francisco, CA. -- January 28, 2017, [http://spie.org/photonics-west.xml].
  36. Program Committee, "Oxide-based Materials and Devices VIII" , SPIE 2017 Photonics West Conference , San Francisco, CA. -- January 28, 2017, [http://spie.org/photonics-west.xml].
  37. Session Chair, "Thin Film Transistors" , SPIE 2017 Photonics West Conference , San Francisco, CA. -- January 28, 2017, [http://spie.org/photonics-west.xml].
  38. Session Chair, "2D Materials for Photonics" , SPIE 2017 Photonics West Conference , San Francisco, CA. -- January 28, 2017, [http://spie.org/photonics-west.xml].
  39. Session Chair, "Late-Breaking Results and Awards for Breakthroughs in Human-Centered Research" , SPIE 2017 Photonics West Conference , San Francisco, CA. -- January 28, 2017, [http://spie.org/photonics-west.xml].
  40. Conference Chair, "Quantum Sensing and Nano Electronics and Photonics XIV" , SPIE 2017 Photonics West Conference , San Francisco, CA. -- January 28, 2017, [http://spie.org/photonics-west.xml].
  41. Plenary Speaker, "The Wonder of Nanotechnology" , ISDRS-2016 International Semiconductor Device Research Symposium , Bethesda, MD. -- December 7, 2016, [http://www.isdrs2016.org/].
  42. Keynote Speaker, "From Terahertz to Deep UV, Science and Technology for Space Applications" , The Optical Society of Chicago, Northwestern OSA Chapter & Chicago IEEE Meeting , Evanston, IL. -- December 3, 2016.
  43. Organizing Commitee Member , OPTICS - 2016 , Atlanta, GA. -- November 28, 2016, [http://optics.conferenceseries.com/].
  44. Keynote Speaker , 2nd World Congress on Materials Science & Polymer Engineering , Abu Dhabi -- November 28, 2016, [http://scientificfuture.com/materials-science-2016/index.php].
  45. Keynote Speaker , 2016 EMN , Phuket, Thailand -- November 3, 2016, [http://emnmeeting.org/phuket/2016/].
  46. Organizing Commitee Member , Optometry - 2016 , Rome, Italy -- October 27, 2016, [http://optometry.conferenceseries.com/organizing-committee.php].
  47. Keynote Speaker, , World Congress on Nano Science & Technology , Singapore -- October 26, 2016, [http://www.bitcongress.com/nano2016/].
  48. Keynote Speaker , ASCIN 2016 , Rome, Italy -- October 9, 2016, [http://www.superstripes.net/acsin2016/].
  49. Keynote Speaker , The European Microwave Conference , London, UK -- October 7, 2016, [http://www.eumweek.com/].
  50. Plenary Speaker, , International Conference on Advanced Materials for a Better Future , Surakarta City, Indonesia -- October 3, 2016, [https://icambf2016.uns.ac.id/].
  51. Keynote Speaker, "III-Nitride Based Avalanche Photodetectors" , IWN-2016, Interantional Workshop on Nitride Semiconductors , Orlando, FL. -- October 2, 2016, [http://www.mrs.org/iwn-2016/].
  52. Plenary Speaker, "Quantum Disc Camera from UV to THz" , International Symposium Terahertz Nanoscience (Teranano VIII) , Porquerolles, France -- October 2, 2016, [http://teranano7.lpa.ens.fr].
  53. Keynote Speaker , Prime 2016 - ECS Meeting , Honolulu, Hawaii -- October 2, 2016.
  54. Technical Program Committee Member , ACM NanoCom 2016 , New York, NY -- September 28, 2016, [http://nanocom.acm.org/cfp.php].
  55. Keynote Speaker , SPIE Security and Defense Europe , Edinburgh, UK -- September 26, 2016, [http://spie.org/x6206.xml].
  56. Keynote Speaker, "New frontiers in quantum cascade lasers: high power solid-state frequency comb and terahertz sources at room temperature" , SPIE Security and Defense Europe , Edinburgh, UK -- September 26, 2016, [http://spie.org/x6206.xml].
  57. Plenary Speaker, "Czochralski: A Crystal Growth Method for All Seasons" , E-MRS Fall Meeting 2016 , Warsaw, Poland -- September 19, 2016, [http://www.european-mrs.com/meetings/2016-fall/plenary-session].
  58. Plenary Speaker, , MIOMD XIII , Beijing, China -- September 18, 2016, [http://miomd2016.csp.escience.cn/dct/page/65540].
  59. Plenary Speaker, "Light, Science and Application for Daily Life" , CPPTA - Conference on Photoacustic and Photothermal Theory and Applications , Warsaw, Poland -- September 13, 2016, [http://cppta.eu/].
  60. Keynote Speaker, "Recent advances in room temperature, CW, monolithic tunable THZ - QCL sources and frequency Combs" , IQCLSW 2016 (International Quantum Laser School & Workshop) , Cambridge, UK -- September 4, 2016, [http://iqclsw2016.org].
  61. Keynote Speaker, "InP based interband and intersubband lasers-diodes; recent advances and future trends" , Summer School of our Marie-Curie Network on Photonics (PROMIS) , Montpellier, France -- September 4, 2016, [http://www.physics.lancs.ac.uk/promis/].
  62. Keynote Speaker, "Atomic and gap-engineering of III-V semiconductor for the next generation of infrared imagers" , Summer School of our Marie-Curie Network on Photonics (PROMIS) , Montpellier, France -- September 4, 2016, [http://www.physics.lancs.ac.uk/promis/].
  63. Keynote Speaker, "Quantum optoelctronic devices based on III-V semiconductor; recent advances and future trends" , Active Photonic Materials VII Conference , San Diego, CA. -- August 28, 2016, [http://spie.org/OPN/conferencedetails/active-photonic-materials].
  64. Keynote Speaker , EMN (Energy, Materials, and Nanotechnology) Meeting on Quantum Communication and Quantum Imaging , Berlin, Germany -- August 23, 2016.
  65. Keynote Speaker , PIERS-2016 , Shanghai, China -- August 8, 2016, [http://www.piers.org/piers2016Shanghai/].
  66. Program Committee Member, , LACSEA 2016 , Heildburg, Germany -- July 25, 2016, [http://www.osa.org/en-us/meetings/optics_and_photonics_congresses/imaging_and_applied_optics/laser_applications_to_chemical_security_and_envir/].
  67. Invited Speaker , NTTI-NGS Conference , Wuerburg, Germany -- July 24, 2016, [http://go.uniwue.de/ngs17].
  68. Keynote Speaker, "High power solid-state frequency comb and terahetz sources at room temperature" , International Workshop on Terahertz Science, Nanotechnologies and Applications , Erice (Sicily), Italy -- July 16, 2016, [http://www.thzworkshop.cnr.it/].
  69. Invited Speaker , Nanotexnology 2016 , Thessaloniki, Greece -- July 2, 2016, [http://www.nanotexnology.com/].
  70. Invited Speaker , NEF-2016 (New Energy Forum) , Kintex, South Korea -- June 30, 2016, [http://www.bitcongress.com/nef2016/].
  71. Keynote Speaker , International Conference on Physics , New Orleans, LA. -- June 27, 2016, [http://physics.conferenceseries.com/call-for-abstracts.php].
  72. Invited Speaker , Nano 2016 , Cape Town, South Africa -- June 21, 2016, [http://nano.conferenceseries.com/].
  73. Keynote Speaker , EMN (Energy, Materials, and Nanotechnology) Prague Meeting , Prague, Czech Republic -- June 21, 2016, [http://www.emnmeeting.org/Istanbul/2016/].
  74. Invited Speaker , Materials & Congress 2016 - Material Science & Engineering , Alicante, Spain -- June 13, 2016, [http://materialsscience.conferenceseries.com/europe/].
  75. Program Committee Member, , QSIP 2016 , Tel Aviv, Israel -- June 12, 2016, [http://www.ortra.com/events/qsip].
  76. Keynote Speaker, "Recent Advances in III-V Semiconductor Quantum Devices at CQD" , EMN (Energy, Materials, and Nanotechnology) Summer Meeting - 2016 , Cancun, Mexico -- June 5, 2016, [http://emnmeeting.org/THZ2016/].
  77. Keynote Speaker, "Recent Advances in Room Temperature, CW, Monolithic Tunable Terahertz Quantum Cascade Laser Sources" , IMS-2016, Workshop on Terahertz Technologies , San Francisco, CA. -- May 22, 2016, [http://ims2016.mtt.org/].
  78. Invited Speaker , EMN (Energy, Materials, and Nanotechnology) Meeting Terahertz 2016 , San Sebastian, Spain -- May 14, 2016, [http://emnmeeting.org/THZ2016/].
  79. Keynote Speaker, "The Wonder of Nanotechnology" , CNST 14th Annual Nanotechnology Workshop , Champaign, IL -- May 5, 2016, [https://urldefense.proofpoint.com/v2/url?u=http-3A__nano.illinois.edu_education_seminars.html&d=BQMFAg&c=8hUWFZcy2Z-Za5rBPlktOQ&r=TCFRUIfd0Mm0vUzjq2ukz4Q_evOA8X8X1A1R7tRltY0&m=VG-cf2LZsL7XGA0qptWEMxmbrtz_6pJfB1NCjPF1X78&s=XC-kTm-BN8R0eJZoP6pJ820mFiutdp8iuSLj136L8IA&e=].
  80. Keynote Speaker, "High-Performance Mid-and Long-wavelength Infrared Photodectors based on InAs/InAs1-xSbx Type-II Superlattices" , SPIE DSS 2016, Infrared Technology & Applications XLII , Baltimore, MD. -- April 17, 2016, [http://www.spie.org/ds100].
  81. Keynote Speaker, "High Performance Short-wavelength Infrared Photodetectors based on InAs/InAs1-xSbx/AIAs1-xSbx Type-II Superlattices for High Operating Temporary Applications" , SPIE DSS 2016, Infrared Technology & Applications XLII , Baltimore, MD. -- April 17, 2016, [http://www.spie.org/ds100].
  82. Keynote Speaker, "Recent Advances in RT-CW, widely tunable semiconductor THz sources" , SPIE DSS 2016, Infrared Technology & Applications XLII , Baltimore, MD. -- April 17, 2016, [http://www.spie.org/ds100].
  83. Keynote Speaker, "Quantum Science and Technology: Applications for Daily Life" , Univerity of Toronto , Toronto, Canada -- April 6, 2016.
  84. Keynote Speaker, "Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AISB/GaSb superlattices for medical and data communication applications" , SPIE 2016 Photonics West Conference , San Francisco, CA. -- February 13, 2016, [http://spie.org/photonics-west.xml].
  85. Conference Chair, "Quantum Sensing and Nano Electronics and Photonics XIII" , SPIE 2016 Photonics West Conference , San Francisco, CA. -- February 13, 2016, [http://spie.org/photonics-west.xml].
  86. Keynote Speaker, "High-power electrically-tunable quantum cascade lasers" , SPIE 2016 Photonics West Conference , San Francisco, CA. -- February 13, 2016, [http://spie.org/photonics-west.xml].
  87. Program Committee, "Oxide-based Materials and Devices VII" , SPIE 2016 Photonics West Conference , San Francisco, CA. -- February 13, 2016, [http://spie.org/photonics-west.xml].
  88. Keynote Speaker, "Fabrication of Nanopause p-NIO by Chemical Lift-off from Sacrificial ZnO Nanoarray Templates" , SPIE 2016 Photonics West Conference , San Francisco, CA. -- February 13, 2016, [http://spie.org/photonics-west.xml].
  89. Session Chair, "Late-Breaking Results and Awards for Breakthroughs in Human-Centered Research" , SPIE 2016 Photonics West Conference , San Francisco, CA. -- February 13, 2016, [http://spie.org/photonics-west.xml].
  90. Keynote Speaker, "Optical Properties of GaN Fabricated by Chemical Lift-off Using Sacrificial ZnO Layers" , SPIE 2016 Photonics West Conference , San Francisco, CA. -- February 13, 2016, [http://spie.org/photonics-west.xml].
  91. Invited Speaker, "RT,CW widely tunable semiconductor THz QCL sources" , SPIE 2016 Photonics West Conference , San Francisco, CA. -- February 13, 2016, [http://spie.org/photonics-west.xml].
  92. Invited Speaker, "Substrate emitting in-phase mode coupled ring QCL pair with single mode and central lobe operations" , SPIE 2016 Photonics West Conference , San Francisco, CA. -- February 13, 2016, [http://spie.org/photonics-west.xml].
  93. Invited Speaker, "Quantum Science and Technology: Applications for Daily Life" , University of Maryland , Baltimore, MD. -- January 29, 2016.
  94. Plenary Speaker, "Optoelectronics for any Occasion with Modern Band Structure Engineering" , Workshop on Multifunctional Nanomaterials and Workshop on Frontier in Electronics , San Juan, PR -- December 16, 2015, [http://www.multifunctionalnanomaterials.org/].
  95. Invited Speaker, "Room tempature. widely tunable, compact THz sources for the diagnosis and detection of CBRN and explosives" , NATO Tera-Mir Workshop , Izmir, Turkey -- November 3, 2015, [http://www.tera-mir.org/main/node/80].
  96. Plenary Speaker, "Developing Better Light Sources with Band Structure Engineering" , Ashton Year of Light Workshop , Birmingham, UK -- October 6, 2015, [http://www.aston.ac.uk/eas/research/groups/photonics/events-seminars/the-aston-year-of-light-workshop-2015/].
  97. Keynote Speaker, "Recent Breakthrough in Quantum Cascade Lasers" , SPIE DSS Europe 2015 , Toulose, France -- September 21, 2015, [http://spie.org/x6201.xml].
  98. Keynote Speaker, "Recent Advances of III-V Semiconductor Quantum Devices from Deep UV (200nm) to THz (300 microns)" , International Conference and Exhibition on Lasers, Optics, and Photonics , Valencia, Spain -- September 1, 2015, [http://optics.conferenceseries.com/index.php].
  99. Invited Speaker, "Recent Development of High Power, Widely Tunable, THz Quantum Cascasde Laser Sources Based on Difference-Frequuency Generation" , SPIE 2015 - Optics & Photonics , San Diego, CA. -- August 9, 2015, [http://spie.org/x30535.xml ].
  100. Invited Speaker, "Ultraviolet Avanlanche Photodiodes" , SPIE 2015 - Optics & Photonics , San Diego, CA. -- August 9, 2015, [http://spie.org/x30535.xml ].
  101. Invited Speaker, "Solar-Bind Photodetectors and Focal Plane Arrays Based on AIGaN" , SPIE 2015 - Optics & Photonics , San Diego, CA. -- August 9, 2015, [http://spie.org/x30535.xml ].
  102. Invited Speaker, "High-Performance Near Infrared Photodectors Based on Gallium-Free InAs1xSbx/AlAs1-xSbx Type II Superlattices" , SPIE 2015 - Optics & Photonics , San Diego, CA. -- August 9, 2015, [http://spie.org/x30535.xml ].
  103. Invited Speaker, "Growth of AIGan on Silicon Substrates: a Novel Way to Make Back-Illuminated Ultraviolet Photodetectors" , SPIE 2015 - Optics & Photonics , San Diego, CA. -- August 9, 2015, [http://spie.org/x30535.xml ].
  104. Plenary Speaker, "High Power Semiconductor Laser Source at Room Temperature for Sensing and Telecommunication" , Conference and Trade Fair in Laser Technology , Florida -- July 20, 2015, [http://laser-technology.conferenceseries.net/].
  105. Invited Speaker, "Applications and Thermal Challenges for Quantum Cascade Lasers" , InterPACK 2015 and ICNMM 2015 Workshop , San Francisco, CA. -- July 6, 2015, [http://www.asmeconferences.org/InterPACKICNMM2015/index.cfm].
  106. Invited Speaker, "Atomic Engineeing of III-V Semiconductors for Quantum Devices from Deep UV (200 nm) to Terahertz (300 microns) at CQD/NU: Recent Advances and Future Trends" , Argonne National Labs , Argonne, IL. -- June 24, 2015.
  107. Invited Speaker, "Recent Breakthroughs in Quantum Cascade Lasers" , Collaborative Conference on 3D and Materials Research (CC3DMR) 2015 Conference , Busan, South Korea -- June 15, 2015, [http://www.cc3dmr.org/2015/].
  108. Invited Speaker, "InAs/InAs1-xSbx Type-II Superlattices for High-performance Long-wavelength Infrared Medical Thermography" , ECS Meeting , Chicago, IL. -- May 24, 2015, [http://www.electrochem.org/meetings/biannual/227/].
  109. Plenary Speaker, "From Terahertz to Deep UV, Science, Technology, and Applications of Quantum Devices" , WSEAS - World Scientific and Engineering Academy and Society Conference , Konya, Turkey -- May 20, 2015, [http://wseas.org/cms.action?id=8960].
  110. Invited Speaker, "InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection" , SPIE DSS 2015 , Baltimore, MD. -- April 20, 2015, [http://spie.org/defense-security-sensing.xml].
  111. Invited Speaker, "High-Performance Bias-selectable Dual-band Mid-/Long-wavelength Infrared Photodetectors based on InAs/InAs1-xSbxType-II Superlattices" , SPIE DSS 2015 , Baltimore, MD. -- April 20, 2015, [http://spie.org/defense-security-sensing.xml].
  112. Keynote Speaker, "Recent advances in room temperature THz emitter based on DFG at CQD/NU" , SPIE DSS 2015 , Baltimore, MD. -- April 20, 2015, [http://spie.org/defense-security-sensing.xml].
  113. Invited Speaker, "Recent Breakthroughs in Quantum Cascade Lasers" , MIRSENS III , Wurzburg, Germany -- March 5, 2015, [http://www.mirsens.org/].
  114. Invited Speaker, "Atomic Engineering of III-V Semiconductor for Quantum Devices" , ECE Colloquim , Champaign, IL -- February 19, 2015, [https://www.youtube.com/watch?v=N9gP9MUd65Q].
  115. Invited Speaker, "Hetero-Integration of GaN on Si (100)" , SPIE 2015 Photonics West Conference , San Francisco, CA. -- February 7, 2015, [http://spie.org/photonics-west.xml].
  116. Invited Speaker, "MOVPE growth of InGaN alloys with high in content on ZnO template substrates" , SPIE 2015 Photonics West Conference , San Francisco, CA. -- February 7, 2015, [http://spie.org/photonics-west.xml].
  117. Invited Speaker, "Wafer-scale chemical lift-off of GaN thin films from sapphire substrates using ZnO sacrificial layers" , SPIE 2015 Photonics West Conference , San Francisco, CA. -- February 7, 2015, [http://spie.org/photonics-west.xml].
  118. Invited Speaker, "Optical studies of nickel oxide growth on Si (111), c-AI203, and FTO/glass by pulsed laser deposition" , SPIE 2015 Photonics West Conference , San Francisco, CA. -- February 7, 2015, [http://spie.org/photonics-west.xml].
  119. Keynote Speaker, "Atomic and Gap Engineering for Biosensing - Inspiration from Nature" , International Conference on Bioinspired and Biobased Chemistry & Materials , Nice, France -- October 15, 2014, [http://sites.unice.fr/nice2014-conference/].
  120. Invited Speaker, "Recent Advances in Room Temperature THz emitter based on DFG at CQD/NU , National Meeting at CNRS, , Paris, France -- October 14, 2014.
  121. Invited Speaker, "GaN based Optoelectronic Devices: From Ultraviolet Detectors and Visible Emitters Towards THz Intersubband Devices" , Fall 2014 ECS Symposium Q3: GaN and SiC Power Technologies 4 , Cancun, Mexico -- October 5, 2014, [http://www.electrochem.org/meetings/biannual/226/ ].
  122. Invited Speaker, "Electrically Tunable Quantum Cascade Lasers for Broadband Applicaions" , MIOMD XII , Montpellier, France -- October 5, 2014, [https://ecs.confex.com/ecs/226/webprogram/programs.html].
  123. Invited Speaker, "Quantum Engineering of Semiconductor Atomic Structures for Quantum Devices from 0.2-300 Microns" , National Science Foundation Wireless and Communications and Sensing Devices, Components and Systems , Dublin, Ireland -- September 28, 2014.
  124. Keynote Speaker, "Novel Approaches to Addressing the Challenge of Growing Defect-Free Wide Bandgap Semiconductors" , Workshop on Defects in Wide Bandgap (WBG) Semiconductors , College Park, MD. -- September 23, 2014, [http://www.nanocenter.umd.edu/events/wbg/program/].
  125. Invited Speaker, "The Quantum Cascade Laser: A Broadband, Tunable Light Source for NASA Applications" , Meeting at NASA , Washington DC -- September 22, 2014.
  126. Invited Speaker, "Recent Advances of Room Temperature Continous Wave High Power Terahertz Sources Based on Difference Frequency Generation in Quantum Cascade Lasers" , European Semiconductor Laser Workshop (ESLW) , Paris, France -- September 18, 2014, [http://www.lpn.cnrs.fr/fr/PHODEV/ESLW2014/].
  127. Invited Speaker, "Electrically Tunable Quantum Cascade Lasers for Broadband Applicaions" , International Conference and Exhibition on Lasers, Optics, and Photonics , Philadelphia, PA. -- September 8, 2014, [http://www.omicsgroup.com/lasers-optics-photonics-conference-2014/cfa.php].
  128. Plenary Speaker, "Quantum Cascade Laser: From Tool to Product" , International Quantum Cascade Lasers School & Workshop 2014 , Policoro, Italy -- September 7, 2014, [http://www.iqclsw2014.cnr.it/].
  129. Invited Speaker, "RT,CW operation of 3.5 THz laser diode based on DFG-QCL" , SPIE 2014 - Optics & Photonics , San Diego, CA. -- August 17, 2014, [http://spie.org/optics-photonics.xml].
  130. Invited Speaker, "Recent Progress of Room Temperature THz Sources Based on Nonlinear Frequency Mixing in Quantum Cascade Laser" , SPIE 2014 - Optics & Photonics , San Diego, CA. -- August 17, 2014, [http://spie.org/optics-photonics.xml ].
  131. Invited Speaker, "Recent Advances in Mid-Infrared Laser Diodes for Infrared Countermeasures at Center for Quantum Devices (CQD) at Northwestern University" , NATO Specialist Meeting on "Novel Infrared Laser Technology for Modern Battlefield Requirements" , Salisbury, England -- July 24, 2014.
  132. Invited Speaker, "High Performance III-Nitride Based Deep UV Photonic Devices on Silicon Substrates" , CCMR 2014 Conference , Seoul, South Korea -- June 23, 2014, [http://www.cc3dmr.org/m2014/].
  133. Invited Speaker, "III-Nitride based Semiconductor for Optoelectronic Devices From Deep UV (200nm) to THz (300 microns) , WOCSDICE/EXMATWC 2014 , Delfi, Greece -- June 15, 2014, [http://exmatec-wocsdice-2014.iesl.forth.gr/index.html].
  134. Keynote Speaker "A Review on Antimonide-based Semiconductors for High-Performance Optoelectronic Devices in Center for Quantum Devices" , SPIE DSS 2014 - Image Sensing Technologies: Materials, Devices, Systems, and Applications Conference , Baltimore, MD. -- May 5, 2014, [http://spie.org/defense-security-sensing.xml].
  135. Invited Speaker "Antimonide-based Superlattices for LWIR imaging" , SPIE DSS 2014 - Image Sensing Technologies: Materials, Devices, Systems, and Applications Conference , Baltimore, MD. -- May 5, 2014, [http://spie.org/defense-security-sensing.xml].
  136. Invited Speaker "Type-II Superlattices for HOT Infrared Imagers" , SPIE DSS 2014 - Image Sensing Technologies: Materials, Devices, Systems, and Applications Conference , Baltimore, MD. -- May 5, 2014, [http://spie.org/defense-security-sensing.xml].
  137. Invited Speaker, , 3rd Annual Conference and Expo of AnalytiX 2014 , Dalian, China -- April 25, 2014, [http://www.bitlifesciences.com/analytix2014/program.asp].
  138. Invited Speaker, , NGC 2014 Conference, 6th NANA & GIGA Forum , Tempe, AZ. -- March 10, 2014, [http://nanoandgiga.com/ngc2014/].
  139. Keynote Speaker, "Recent progress in high-power single-mode quantum cascade lasers" , SPIE 2014 Photonics West Conference , San Francisco, CA. -- February 1, 2014, [http://spie.org/x2584.xml].
  140. Keynote Speaker, "III-V semiconductor optoelectronic devices from Uv to THz: recent advances and future trends" , SPIE 2014 Photonics West Conference , San Francisco, CA. -- February 1, 2014, [http://spie.org/x2584.xml].
  141. Invited Speaker, Quantum Cascade Laser Research at the Center for Quantum Devices , 20th Anniversary of QCL , Zurich, Switzerland -- January 16, 2014, [http://www.20yearsqcl.ethz.ch/].
  142. Women in THz Pushing the Frontiers of Monolithic Integration: A Compact THz Revolution , International Conference on THz and Mid Infrared Radiation and Applications to Cancer Detection Using Laser Imaging , Sheffield Hallam University, Sheffield, UK -- October 10, 2013, [http://tera-mir.org/].
  143. Quantum Engineering of Semiconductor Atomic Structures for Biosensing and Photonics , The International Conference and Exhibition on Lasers, Optics, and Photonics , San Antonio, TX -- October 3, 2013, [http://www.omicsgroup.com/conferences/lasers-optics-photonics-2013/].
  144. Invited Talk, "III-V Sb Based Type-II Superlattices for Third Generation Infrared Imagers" , Workshop on the Physics and Chemistry of II-VI Materials , Chicago, IL. -- October 1, 2013.
  145. Invited Speaker, "High power THz sources with wide tenability based on intracavity difference frequency generation semiconductor THz sources" , SPIE 2013 Optics + Photonics Conference , San Diego, CA. -- August 25, 2013.
  146. Invited Speaker, "High power THz sources with wide tenability based on intracavity difference frequency generation semiconductor THz sources" , ARW NARO WORKSHOP , Kiev, Ukraine -- May 26, 2013.
  147. Invited Speaker, "High-Performance Bias-selectable Dual-band Mid-/Long-wavelength Infrared Photodetectors and Focal Plane Arrays based on InAs/GaSb Type-II Superlattices” , SPIE Defense, Security and Sensing (DSS) Conference , Baltimore, MD. -- April 29, 2013.
  148. Invited Speaker,"Widely-tuned room-temperature high semiconductor THz sources" , Terahertz Days and GDR‐I Workshop , Cargèse, Corsica, France -- March 25, 2013.
  149. "High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices" , SPIE Photonics West Symposium in Quantum Sensing and Nanophotonic Devices X Conference , San Francisco, CA -- February 5, 2013.
  150. "Effect of gating technique on the type-II InAs/GaSb long-wavelength infrared photodetectors" , SPIE Photonics West Symposium in Quantum Sensing and Nanophotonic Devices X Conference , San Francisco, CA -- February 5, 2013.
  151. Invited talk, "Room-temperature high-performance laser diodes from 3 micron to 300 micron , SPIE Photonics West Symposium in Photonic and Phononic Properties of Engineering Nanostructures Conference , San Francisco, CA -- February 4, 2013.
  152. "Ultraviolet light-emitting diode on Si substrate" , SPIE Photonics West Symposium in Quantum Sensing and Nanophotonic Devices X Conference , San Francisco, CA -- February 4, 2013.
  153. "Widely-tuned room-temperature terahertz quantum cascade lasers sources" , SPIE Photonics West Symposium in Quantum Sensing and Nanophotonic Devices X Conference , San Francisco, CA -- February 3, 2013.
  154. "Continuous-wave room-temperature operation of lambda ~ 3 micron quantum cascade laser" , SPIE Photonics West Symposium in Quantum Sensing and Nanophotonic Devices X Conference , San Francisco, CA -- February 3, 2013.
  155. "Dual section quantum cascade lasers with wide electrical tuning" , SPIE Photonics West Symposium in Quantum Sensing and Nanophotonic Devices X Conference , San Francisco, CA -- February 3, 2013.
  156. Keynote Talk, "State-of-the-art IR laser diodes with high power, high WPE, single mode, CW operation at RT" , TERA-MIR 2012 , Izmir, Turkey -- November 3, 2012.
  157. Plenary Talk, "Recent progress in mid-infrared laser sources at Center for Quantum Devices, Northwestern University" , MIRSENS-II Workshop , Wroclaw, Poland -- October 19, 2012.
  158. Plenary Talk, Quantum cascade lasers ready for IRCM applications , SPIE Security and Defence/Europe - Technologies for Optical Countermeasures , Edinburgh, Scotland -- September 26, 2012.
  159. Invited Talk, "Intersubband laser diodes from IR to THz: recent advances and future trends" , SPIE Optics and Photonics Symposium - Terahertz Emitters, Receivers and Application III Conference , San Diego, CA -- August 13, 2012.
  160. Plenary Talk, "Semiconductor nano photonics for bio sensing" , SPIE Optics and Photonics Symposium - Joint Session of Nanobiosystems: Processing, Characterization, & Applications V and Optical Processes in organic Materials and Nanostructures Conferences , San Diego, CA -- August 13, 2012.
  161. Invited Talk, GaSb/InAs T2SL; Key Technologies and Recent Achievement in Infrared Imaging , International Symposium on Optoelectronic Materials and Devices (ISOMD) , Chicago, IL -- July 12, 2012, [http://www.sivananthanlabs.us/Razeghi.html].
  162. Invited Talk, "Frontiers of Intersubband Quantum Cascade Lasers" , 15th International Laser Optics Conference , St. Petersburg, Russia -- June 26, 2012.
  163. Invited Talk, “Antimode-based Type-II Superlattice-based Photon Detectors: An Emerging Candidate for the Third-Generation of Infrared Imagers” , International Conference on Quantum Structure Infrared Photodetector (QSIP) , Cargese, Corsica -- June 19, 2012.
  164. Invited Talk, Competing technology for high-speed HOT-IR-FPAs , SPIE Defense, Security and Sensors Symposium , Baltimore, MD -- April 26, 2012.
  165. Keynote Talk, Intersubband Lasers Diodes from IR to THz: Recent Advances and Future Trends , SPIE Defense, Security and Sensors Symposium , Baltimore, MD -- April 24, 2012.
  166. Keynote Talk, Recent advances in room temperature semiconductor terahertz sources , SPIE Defense, Security and Sensors Symposium , Baltimore, MD -- April 24, 2012.
  167. Keynote Talk, Revolutionary development of Type-II GaSb/InAs superlattices for third generation of IR imaging , SPIE Defense, Security and Sensors Symposium , Baltimore, MD -- April 24, 2012.
  168. Invited Talk, Recent advances in 2 color FPAs based on T2SL: InAs/GaSb , SPIE Defense, Security and Sensors Symposium , Baltimore, MD -- April 24, 2012.
  169. Invited Talk, "Toward realizing high power semiconductor terahertz laser sources at room temperature" , Defense Threat Reduction Agency (DTRA) THz Workshop Forum , Falls Church, VA -- April 3, 2012.
  170. Invited Talk, Overview of Activity at the Center for Quantum Devices (CQD) especially Toward Realizing High Power Semiconductor Terahertz Laser Source at Room Temperature for Sensing and Telecommunication , Thales Research and Technology (TRT) , Paris, France -- December 20, 2011.
  171. Invited Talk, Overview of Activity at the Center for Quantum Devices (CQD) especially Toward Realizing High Power Semiconductor Terahertz Laser Source at Room Temperature for Sensing and Telecommunication , Universite Montpellier 2, Institut d'Electronique du Sud (IES) , Montpellier, France -- December 15, 2011.
  172. Invited Talk, Stable single mode terahertz semiconductor sources at room temperature , International Semiconductor Device Research Symposium (ISDRS) , Collage Park, MD -- December 9, 2011.
  173. High power, High WPE, High operating temperature, reliability, yield, beam quality of QCL for IRCM and other applications , Workshop on Challenges in Power Sclaing of High Power Diode Laser Emitters and Arrays , Marina del Rey, CA -- November 3, 2011.
  174. Deep ultraviolet (254 nm) focal plane arrays , SPIE Optics and Photonics Syposium, Conference on Single Photon Detectors , San Diego, CA -- August 25, 2011.
  175. Invited Talk, "Recent advances of terahertz quantum cascade lasers" , SPIE Optics and Photonics Syposium, Conference on Infrared Remote Sensing and Instrumentation XIX , San Diego, CA -- August 21, 2011.
  176. High Operability 1024 x 1024 Long Wavelength Infrared Focal Plane Array Based on Type-II InAs/GaSb Superlattice , 15th International Conference on Narrow Gap System (NGS15) , Blacksburg, VA -- August 1, 2011, [http://www.phys.vt.edu/~khodapar/NGS15.htm].
  177. Room temperature stable and narrow THz emission from quantum cascade lasers based on intracavity difference frequency generation , 15th International Conference on Narrow Gap System (NGS15) , Blacksburg, VA -- August 1, 2011.
  178. Invited Talk, "Recent Advanced in IR Semiconductor Laser Diodes and Future Trends," Session on "Progress in Semiconductor Sources" , IEEE Photonics Society Summer Topical Meeting Series , Montreal, Canada -- July 18, 2011, [http://www.photonicsconferences.org/SUM2011].
  179. Invited Talk, "Recent Quantum Cascade Laser Accomplishments and New Research Directions" , Technical Interchange Meeting (TIM) , U.S. Naval Research Laboratory, Washington, DC -- June 1, 2011.
  180. Invited Talk, "Overview of Activity at the Center for Quantum Devices (CQD) especially Toward Realizing High Power Semiconductor Terahertz Laser Source at Room Temperature for Sensing and Telecommunication" , Samsung Telecommunications America Inc. , Richardson, TX -- May 27, 2011.
  181. Invited Talk, High-operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice , SPIE Defense, Security and Sensing Syposium, conference on Infrared Technology and Applications XXXVII , Orlando, FL -- April 28, 2011.
  182. Invited Talk, Recent advances in high-performance antimonide-based superlattice FPAs , SPIE Defense, Security and Sensing Syposium, conference on Infrared Technology and Applications XXXVII , Orlando, FL -- April 26, 2011.
  183. Keynote Talk, Toward realizing high power semiconductor terahertz lasers sources at room temperature , SPIE Defense, Security and Sensing Syposium, conference on Terahertz Physics, Devices and Systems V , Orlando, FL -- April 25, 2011.
  184. Invited Talk: Widely tunable, single mode, high power quantum cascade lasers , Integrated Photonics: Materials, Devices and Applications Conference at SPIE 5th International Symposium on Microtechnologies for the New Millennium , Prague, Czech Republic -- April 19, 2011.
  185. Distinguished Speaker, "Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up" , Centenary Celebrations of the Electrical and Computer Engineering Department at the University of Dayton , Dayton, OH -- April 8, 2011.
  186. III-nitride resonant tunneling devices from growth to fabrication , SPIE Photonics West Symposium , San Francisco, CA -- January 26, 2011.
  187. High power 1D and 2D photonic crystal distributed feedback quantum casacde laser , SPIE Photonics West Symposium , San Francisco, CA -- January 26, 2011.
  188. Use of PLD-grown ZnO thin films and Nanostructures .... , SPIE Photonics West Symposium , San Francisco, CA -- January 26, 2011.
  189. Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer , Conference on "Quantum Sensing and Nanophotonic Devices VIII," SPIE Photonics West Symposium , San Francisco, CA -- January 25, 2011.
  190. Development of a sacrificial ZnO/c-Al(2)O(3) template approach to enable... , SPIE Photonics West Symposium , San Francisco, CA -- January 25, 2011.
  191. Advances in UV sensitive visible blind GaN-based APDs , SPIE Photonics West Symposium , San Francisco, CA -- January 25, 2011.
  192. High peak power (34 W) photonic crystal distributed feedback quantum cascade lasers , Conference on "Photonic and Phononic Properties of Engineered Nanostructures," SPIE Photonics West Symposium , San Francisco, CA -- January 24, 2011.
  193. Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes , Conference on "Quantum Sensing and Nanophotonic Devices VIII," SPIE Photonics West Symposium , San Francisco, CA -- January 24, 2011.
  194. III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices , IEEE Photonics Society Annual Meeting - Integrated Optics, Optoelectronics and Interconnect (IOOI) Conference , Denver, CO -- November 10, 2010.
  195. Penary Talk, Mastering power and efficiency of mid-infrared semiconductor lasers , European Semiconductor Laser Workshop (ESLW) , Pavia, Italy -- September 24, 2010.
  196. Plenary Talk, State-of-art mid-infrared quantum cascade lasers , 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X) , Shanghai, China -- September 5, 2010.
  197. Plenary Talk, Revolutionary development of infrared optoelectronics , 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X) , Shanghai, China -- September 5, 2010.
  198. Plenary Talk, Quantum optoelectronic devices from UV to THz at CQD: Recent advances and future trends , International Union of Materials Research Society-International Conference on Electronic Materials (IUMRS-ICEM) , Kintex, Seoul, Korea -- August 22, 2010.
  199. Comparison of APDs grown on c- and m-plane substrates , SPIE Optics and Photonics Symposium , San Diego, CA -- August 5, 2010.
  200. III-nitride based avalanche photo detectors , SPIE Optics and Photonics Symposium , San Diego, CA -- August 4, 2010.
  201. Plenary Talk, Revolutionary development of infrared optoelectronics , 1st International DNTAC Symposium on Nano Technology , Seoul, Korea -- July 14, 2010.
  202. Plenary Talk: State-of-art mid-infrared quantum cascade lasers , SPIE Defense and Security Symposium (DSS) , Orlando, FL -- April 5, 2010.
  203. Novel Green Light Emitting Diodes: Innovative Droop-free Lighting Solutions for a Sustainable Earth , 4th International Conference on LED and Solid State Lighting (LED 2010) , COEX, Seoul, Korea -- February 3, 2010.
  204. Current status and potential of high power mid-infrared intersubband lasers , SPIE International Photonics West Symposium , San Francisco, CA -- January 25, 2010.
  205. High performance quantum dot and quantum well infrared focala plane arrays , SPIE International Photonics West Symposium , San Francisco, CA -- January 24, 2010.
  206. Watt level performance of photonic crystal distributed feedback quantum cascade laser , SPIE International Photonics West Symposium , San Francisco, CA -- January 23, 2010.
  207. Type-II InAs/GaSb Superlattices: A Developing Material System vs. Mercury Cadmium Telluride - The State-of-the-Art Infrared Detection Technology , DRS RSTA Inc. - Infrared Technologies Division , Dallas, TX -- December 14, 2009.
  208. Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up , IEEE Boston Photonics Society , MIT LIncoln Labs, Lexington, MA -- December 10, 2009.
  209. Type II InAs/GaSb superlattices: A developing material system vs. Mercury Cadium Telluride; the state-of-the-art infrared detection technology , National Research Council Committee on the Developments in Detector Technoloiges, The National Academies , Washington, DC -- December 8, 2009.
  210. Recent advances in quantum cascade lasers at the Center for Quantum Devices , International Workshop on Terahertz and Mid Infrared Radiation (TERA-MIR): Basic Research and Applications , Turunc-Marmaris, Turkey -- November 3, 2009.
  211. Hybrid Green LEDs with n-type ZnO Substituted for n-type GaN in an Inverted p-n Junction , IEEE LEOS Photonics Annual Meeting , Belek-Antalya, Turkey -- October 7, 2009.
  212. High power, high WPE, CW, RT operation of quantum cascade lasers: Recent results and future trends , IEEE LEOS Photonics Annual Meeting , Belek-Antalya, Turkey -- October 6, 2009.
  213. State of the art Type II superlattices in infrared detection and imaging , IEEE LEOS Photonics Annual Meeting , Belek-Antalya, Turkey -- October 4, 2009.
  214. State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging , SPIE Optics and Photonics Symposium , San Diego, CA -- August 4, 2009.
  215. State of the art of Type II superlattices in infrared detection and imaging , International Conference on Narrow Gap Semiconductors and Systems (NGS-2) , Sendai, Japan -- July 13, 2009.
  216. Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging , International Symposium on Photoelectronic Detection and Imaging , Beijing, China -- June 17, 2009.
  217. Plenary Talk - III-Nitride Optoelectronic Devices: High Performance GaN Avalanche Photodiodes, Novel Green Light Emitting Diodes and III-Nitride Intersubband Devices , AFOSR Joint Electronics Program Review , Arlington, VA -- May 27, 2009.
  218. Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays , SPIE International Symposium on Microtechnologies for the New Millennium , Dresden, Germany -- May 6, 2009.
  219. Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications , SPIE International Symposium on Microtechnologies for the New Millennium , Dresden, Germany -- May 5, 2009.
  220. Background limited performance of long wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice , SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference , Orlando, FL -- April 14, 2009.
  221. High performance antimony base Type-II superlattice photodiodes on GaAs substrate , SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference , Orlando, FL -- April 14, 2009.
  222. Modern Optoelectronics: Building Better Materials from the Atoms Up , Invited Colloquium Speaker, Physics Department, Texas Tech University , Lubbock, TX -- March 6, 2009.
  223. III-Nitride avalanche photodiodes , SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
  224. Mid-infrared quantum cascade lasers with high wall plug efficiency , SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
  225. Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions , SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
  226. GaN-based nanostructured photodetectors , SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
  227. The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier , SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
  228. Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices , SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
  229. Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays , SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
  230. Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN , SPIE Photonics West Symposium, Zinc Oxide Materials and Devices IV , San Jose, CA -- January 25, 2009.
  231. Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays , SPIE Photonics West Symposium, Quantum Dots, Particles and Nanoclusters VI , San Jose, CA -- January 25, 2009.
  232. High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system , SPIE Photonics West Symposium, Novel In-Plane Semiconductor Lasers VIII , San Jose, CA -- January 25, 2009.
  233. High performance type-II InAs/GaSb superlattice photodiodes for infrared detection and imaging , Quantum Structure Infrared Photodetector (QSIP) , Yosemite, CA -- January 20, 2009.
  234. Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays , Quantum Structure Infrared Photodetector (QSIP) , Yosemite, CA -- January 19, 2009.
  235. Modern Atomic Engineering: Inspiration from Nature , Distinguished Speaker, EECS Department, Northwestern University , Evanston, IL -- December 3, 2008, [http://www.eecs.northwestern.edu/video/razeghi.html].
  236. High performance type-II InAs/GaSb superlattices photodetectors and focal plane arrays , 26th Army Conference , Orlando, FL -- December 1, 2008.
  237. High performance type-II InAs/GaSb long wavelength infrared photodetectors and focal plane arrays , U.S. Workshop on the Physics and Chemistry of II-VI Materials , Las Vegas, NV -- November 11, 2008.
  238. Building a Better Infrared Laser with Band Structure Engineering , Invited Seminar, Department of Physics and Optical Science , University of North Carolina at Charlotte -- October 17, 2008.
  239. Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging , NRO, Invited Seminar , Chantilly, VA -- October 7, 2008.
  240. Heterogeneous Monolithic Integration of III-V Semiconductors on GaAs and Si Substrates for Large Format Infrared Focal Plane Array Development , DARPA Common Platform Composite Wafer Technology: IR Materials Workshop , Chicago, IL -- October 6, 2008.
  241. High Performance QC Lasers: Latest Achievements and Future Trends , International Quantum Cascade Lasers School and Workshop (IQCLSW) , Monte Verita, Switzerland -- September 14, 2008.
  242. Very High Performance LWIR Type-II InAs/GaSb Superlattice Photodiodes with M-Structure , SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies , San Diego, CA -- August 11, 2008.
  243. Development of Material Quality and Structural Design for High Performance Type II InAs/GaSb Superlattice Photodiodes , SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies , San Diego, CA -- August 11, 2008.
  244. III-Nitride Based UV Single Photon Detection (APDs) , 2nd International Symposium on Growth of III-Nitrides (ISGN-2) , Laforet Shuzenji Izu, Japan -- July 6, 2008.
  245. Type II InAs/GaSb Superlattices: A Promising Material System for Infrared , 2008 Euro American Workshop on Information Optics , Annecy, France -- June 1, 2008.
  246. Plenary Talk, New Frontiers in InP Based Quantum Devices , 20th International Conference on Indium Phosphide and Related Materials (IPRM) 2008 , Versailles, France -- May 25, 2008.
  247. Quantum Dots or Artificial Atoms: Solution for High Performance IR Thermal Imaging , Particles 2008 Conference , Orlando, FL -- May 10, 2008.
  248. UV laser diodes based on AlGaN nanostructures , 2008 AFRL-AFOSR Nanotechnology Initiative Review , Fairborn, OH -- May 6, 2008.
  249. Keynote Speaker, A Strong History of US-Korea Collaborations with the Center for Quantum Devices , US-AFOSR/South Korea-MOST Nanoscience Meeting , Arlington, VA -- April 25, 2008.
  250. Modeling, Material Growth and Processing, Detector and FPA Fabrication and Characterization and Comparison of Type-II Superlattice and HgCdTe Performance and Cost , Type-II Strained Layer Superlattice (T2SL) IRFPA Workshop , Arlington, VA -- April 8, 2008.
  251. Atomic Control of Materials: Building Bloc for High Performance Quantum Devices , Workshop on Recent Advances of Low Dimensional Structures and Devices , Nottingham, England -- April 7, 2008.
  252. New optoelectronic components based on quantum structures , EOS Topical Meeting , Utrecht, Netherlands -- March 31, 2008.
  253. Electrically pumped photonic crystal distributed feedback quantum cascade lasers , MRS Symposium on Materials and Devices for Laser Remote Sensing & Optical Communication , San Francisco, CA -- March 24, 2008.
  254. Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays at the Center for Quantum Devices , SPIE Defense and Security Symposium, Infrared Technology and Applications XXXIV Conference , Orlando, FL -- March 17, 2008.
  255. Quest for Material Perfection: Atomic Engineering Shapes the Future , College of Optical Sciences Colloquium Lecture Series , University of Arizona, Tucson, AZ -- March 6, 2008.
  256. Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes , Military Sensors Symposium (MSS) , Las Vegas, NV -- February 6, 2008.
  257. High quantum efficiency QDIP and FPA based on self-assembled semiconductor quantum dots , Workshop on Nano Optoelectronics (WNO) , Seoul, Korea -- January 8, 2008.
  258. State-of-the-Art Type II Superlattices , Missile Defense Agency (MDA)-Lockheed Martin Industry Day , Sunnyvale, CA -- November 13, 2007.
  259. Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature , IEEE LEOS Conference , Orlando, FL -- October 22, 2007.
  260. High performance type-II InAs/GaSb long wavelength infrared photodetectors and focal plane arrays , Advanced Infrared Technology and Applications 9 (AITA) , Leon, Guanajuato, Mexico -- October 9, 2007.
  261. Self-Assembled Semiconductor Quantum Dot Infrared Photodetector Operating at Room temperature and Focal Plane Array , Advanced Infrared Technology and Applications (AITA) International Workshop , Leon, Guanajuato, Mexico -- October 8, 2007.
  262. Research progress in type-II superlattice photodiodes for the long wavelength infrared at CQD , Air Force Research Laboratory , Kirtland AFB, NM -- September 27, 2007.
  263. Quantum Dot IR Detectors , Workshop on Nanoscale Epitaxial Semiconductor Structures (NESS) , Albuquerque, NM -- September 26, 2007.
  264. Current Status of Type II InAs/GaSb Superlattices MWIR-LWIR Photodiodes and FPA at the Center for Quantum Devices , Conference on Infrared Spaceborne Remote Sensing and Instrumentation XV, SPIE International Symposium on Optics and Photonics , San Diego, CA -- August 30, 2007.
  265. InAs Quantum Dots for High Performance Thermal Imaging Operating at High Temperature , Particle-Based Device Technologies , Toronto, Canada -- August 20, 2007, [http://nanoparticles.org/Particles2007/].
  266. Keynote Address: Quantum Sensing Through Nano-Photonics: Inspiration from Nature , 6th Euro American Workshop on Information Optics , Reykjavik, Iceland -- June 27, 2007.
  267. Thermal Imaging based on High-Performance InAs/InP Quantum-Dot Infrared Photodetector Operating at High Temperature , Nanoelectronic Devices for Defense and Security (NANO-DDS) , Crystal City, VA -- June 20, 2007.
  268. On the performance of type-II superlattice photodiodes for the long wavelength infrared , 2nd Space-based Sensing and Protection Conference , Kirtland AFB, NM -- May 31, 2007.
  269. Current Status of High Performance Quantum Cascade Lasers at the Center for Quantum Devices , Conference on Indium Phosphide and Related Materials (IPRM'07) , Kunibiki Messe, Matsue-shi, Shimane Pref., Japan -- May 14, 2007.
  270. Infrared Imaging Using Quantum Dot Infrared Photo Detectors , MIOMD-8 Conference , Bad Ischl, Austria -- May 14, 2007.
  271. High Power Mid- and Far-Wavelength Infrared Lasers for Free Space Communications , Conference on Photonic Materials, Devices and Applications, SPIE International Symposium on Mircotechnologies for the New Millennium , Gran Canaria, Spain -- May 2, 2007.
  272. Self-assembled Semiconductor Quantum Dot Infrared Photodetector Operating at Room temperature and Focal Plane Array , Conference on Photonic Materials, Devices and Applications, SPIE International Symposium on Mircotechnologies for the New Millennium , Gran Canaria, Spain -- May 2, 2007.
  273. Infrared Imaging with Quantum-Dot Infrared Photodetectors , Sixth International Conference on Low Dimensional Structures and Devices (LDSD 2007) , The Archipelago of San Andres, Colombia -- April 15, 2007.
  274. Self-Assembled Semiconductor Quantum Dot Infrared Photodetector Operating at Room temperature and Focal Plane Array , SPIE Conference on Infrared Technology and Application, Defense and Security Symposium , Orlando, FL -- April 9, 2007.
  275. 256x256 Infrared Focal Plane Array Based on Type II InAs/GaSb Superlattice with a 12 mm Cutoff Wavelengt , SPIE Conference on Infrared Technology and Application, Defense and Security Symposium , Orlando, FL -- April 9, 2007.
  276. The Quantum Cascade Laser: A Fast, Convenient Tool for Trace Chemical Detection , American Filtration and Separations Society (AFS) Annual Conference, Homeland Security Session , Orlando, FL -- March 27, 2007.
  277. Infrared Imaging by High Performance Quantum Dot Infrared Photodetector Operating at High Temperature , Optical Society of America (OSA), Optical Fiber Communication (OFC) Conference , Anaheim, CA -- March 25, 2007.
  278. Self-assembled Semiconductor Quantum Dot Infrared Photodetector Operating at Room temperature and Focal Plane Array , Nano and Giga Challenges (NGC) in Electronics and Photonics Symposium , Phoenix, AZ -- March 12, 2007.
  279. High Performance QDIP with High Quantum Efficiency and High Operating Temperature , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) , Savannah, GA -- February 18, 2007.
  280. Optimization of Mid-Wave Quantum Cascade Lasers for Highly Efficient Operation , Efficient Mid-Wave Infrared Lasers (EMIL) Kickoff Meeting, DARPA/ONR , Washington, DC -- February 16, 2007.
  281. Quantum Cascade Lasers Emitting at Wavelengths Shorter than 4 mm , SPIE International Photonics West Symposium, Novel In-Plane Semiconductor Lasers VI , San Jose, CA -- January 20, 2007.
  282. Type_II InAs/GaSb Superlattice Focal Plane Arrays for High-Performance Third Generation Infrared Imaging and Free-Space Communications , SPIE International Photonics West Symposium, Optoelectronic Integrated Circuits (OEIC) XI , San Jose, CA -- January 20, 2007.
  283. III-Nitride Avalanche Photodiodes , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices IV , San Jose, CA -- January 20, 2007.
  284. Type-II M Structure Photodiodes: An Alternative Material Design for Mid-Wave to Long Wavelength Infrared Regimes , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices IV , San Jose, CA -- January 20, 2007.
  285. Techniques for High Quality SiO2 Films , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices IV , San Jose, CA -- January 20, 2007.
  286. Dry Etching of ZnO Towards the Development of ZnO Homostructure LEDs , SPIE International Photonics West Symposium, Zinc Oxide Materials and Devices , San Jose, CA -- January 20, 2007.
  287. Infrared Imaging with self-assembled InGaAs Quantum Dot Infrared Photodetectors , 25th U.S. Army Science Conference , Orlando, FL -- November 27, 2006.
  288. Recent Advances in High Power Mid-and Far-Wavelength Infrared Lasers for Free Space Communication , SPIE Optics East , Boston, MA -- October 1, 2006.
  289. Type-II Superlattice Photodetectors for Mid-Wavelength Infrared to Long-Wavelength Infrared Focal Plane Arrays , SPIE Optics East , Boston, MA -- October 1, 2006.
  290. Mid-Infrared Quantum Cascade Lasers at the Center for Quantum Devices , CLEO/EQEC Europe Conference , Pisa, Italy -- September 10, 2006.
  291. High Power, High Reliability Quantum Cascade Lasers at the Center for Quantum Devices , 2nd International Workshop on Quantum Cascade Lasers , Rosa Marina, Ostuni, Italy -- September 5, 2006.
  292. High Performance Mid-Wavelength Quantum Dot Infrared Photodetectors for Focal Plane Arrays , SPIE Optics and Photonics, Infrared Spaceborne Remote Sensing XIV Conference , San Diego, CA -- August 13, 2006.
  293. First Demonstration of 10 mm FPAs in InAs/GaSb Superlattices , IEEE LEOS Summer Topical Meeting on Infrared Sensors, , Quebec City, Canada -- July 17, 2006.
  294. Quantum Sensing Through Nano-Optoelectronics: Inspiration from Nature , Invited Seminar at Physics Department, Ecole Normale , Cachan, France -- July 13, 2006.
  295. QWIP vs QDIP , QWIP 2006 Conference , Sri Lanka -- June 18, 2006.
  296. High Power, High Reliability Quantum Cascade Lasers at the Center for Quantum Devices , Solid State and Diode Laser Technology Review (SSDLTR) , Albuquerque, NM -- June 13, 2006.
  297. Quantum Dots in GaInP/GaInAs/GaAs for Infrared Sensing , International Conference on Modern Materials and Technologies (CIMTEC) , Acireale, Sicily, Italy -- June 4, 2006.
  298. Long-Wavelength Infrared Focal Plane Arrays based on InGaAs/GaAs/InGaP Quantum-dot Infrared Photodetectors (QDIPs) grown by MOCVD , CLEO/QELS Conference , Long Beach, CA -- May 21, 2006.
  299. First Demonstration of 270 nm AlGaN solar-blind p-i-n Avalanche Photodiodes , 30th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE2006) , Fiskebackskil, Sweden -- May 14, 2006.
  300. Infrared Sensing with Nanostructures: High Sensitivity InGaAs Quantum Dot Photodetectors for Focal Plane Arrays , 30th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE2006) , Fiskebackskil, Sweden -- May 14, 2006.
  301. Type II Superlattice Infrared Photodetectors for MWIR to VLWIR Focal Plane Arrays , SPIE Infrared Technology & Applications Conference , Orlando, FL -- April 17, 2006.
  302. Quantum-Dot Infrared Photodetectors and Focal Plane Arrays , SPIE Infrared Technology & Applications Conference , Orlando, FL -- April 17, 2006.
  303. Quantum Sensing Through Nano-Optoelectronics: Inspiration from Nature , Invited Seminar at Kansas State University , Manhattan, KS -- March 27, 2006.
  304. U.S.-Japan Young Researchers Exchange Program for Nanotechnology and Nanomanufacturing , Host, Site Visit sponsored by the National Science Foundation , Evanston, IL -- March 10, 2006.
  305. High-Power, Continuous-Wave Quantum Cascade Lasers Operating at Room Temperature , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) , Scottsdale, AZ -- February 19, 2006.
  306. Survival Skills for Female Graduate Students and Junior Faculty , Northwestern University Womens Center , Evanston, IL -- February 15, 2006.
  307. InAs quantum dot infrared photodetectors on InP by MOCVD , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
  308. Quantum dot infrared photodetectors: Comparison of experiment and theory , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
  309. Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
  310. Optical coatings for improved performance of quantum cascade lasers by ion-beam sputtering deposition and comparison to other techniques , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
  311. InGaAs/InGaP/GaAs quantum dot infrared photodetector focal plane array development , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
  312. InGaAs/InGaP quantum-dot infrared photodetector with a high detectivity , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
  313. Positive and negative luminescence in binary type II InAs/GaSb superlattice photodiodes , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
  314. High Power, Continuous-Wave, Quantum Cascade Lasers for MWIR and LWIR Applications , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
  315. Solar-Blind Avalanche Photodiodes , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
  316. Dry Etching of ZnO Towards the Development of ZnO Homostructure LEDs , SPIE International Photonics West Symposium, Zinc Oxide Materials and Devices , San Jose, CA -- January 21, 2006.
  317. Mid-Infrared Quantum Cascade Lasers for High Temperature Applications , 2nd Symposium on IR Materials and Technologies , State College, PA -- November 21, 2005.
  318. Infrared Sensing Technology with Nanostructures Quantum Dot and Nanopillar , Nanostructured Materials: Environmental, Energy, and Sensing Applications Symposium , Barga, Italy -- September 18, 2005.
  319. High Power, CW, RT, DFB-CQD Lasers Emitting at 4.8 Microns , International Conference on Advanced Optoelectronics and Lasers (CAOL 2005) , Yalta, Crimea, Ukraine -- September 12, 2005.
  320. High power, CW, QCLs operating at high temperature , MIOMD-VII , Lancaster, United Kingdom -- September 12, 2005.
  321. Quantum Dot Infrared Photodetectors & Focal Plane Arrays , MIOMD-VII , Lancaster, United Kingdom -- September 12, 2005.
  322. High Temperature, High Power, CW Operation of Quantum Cascade Lasers , 8th International Conference on Intersubband Transitions in Quantum Wells (ITQW20005) , Cape Cod, MA -- September 11, 2005.
  323. Type II InAs/GaSb Superlattice as an Excellent Candidate for the Next Generation Infrared FPAs , SPIE International Congress on Optics and Optoelectronics , Warsaw, Poland -- August 28, 2005.
  324. AlGaN p-n Junctions for 280 nm APDs and UV Lasers , DARPA Workshop on Deep Ultraviolet Photodetectors , Arlington, VA -- August 26, 2005.
  325. Recent Improvements in Quantum Cascade Lasers at the Center for Quantum Devices , 12th international Conference on Narrow Gap Semiconductors (NGS) , Toulouse, France -- July 3, 2005.
  326. QWIP, QDIP, and FPA at Center for Quantum Devices , 12th international Conference on Narrow Gap Semiconductors (NGS) , Toulouse, France -- July 3, 2005.
  327. Recent Achievements of Type II InAs/GaSb Superlattices for LWIR Focal Plane Arrays , 12th International Conference on Narrow Gap Semiconductors (NGS) , Toulouse, France -- July 3, 2005.
  328. Recent Advances in 3-5 mm InGaAs/InAlAs/InP Quantum Cascade Lasers , CLEO/EUROPE-EQEC Conference , CLEO/EUROPE-EQEC Conference -- June 12, 2005.
  329. Quantum Cascade Laser Development at the Center for Quantum Devices , Solid State and Diode Laser Technology Review (SSDLTR) , Los Angeles, CA -- June 7, 2005.
  330. Recent Results from SLS FPAs , III-V IR Detectors Workshop at Army Research Laboratory , Adelphi, MD -- May 28, 2005.
  331. Short-wavelength Ultraviolet Light-Emitting Diodes Based on AlGaN , CLEO/QELS Conference , Baltimore, MD -- May 22, 2005.
  332. High-Power, Continuous-Wave, DFB-Quantum Cascade Lasers Operating Above Room Temperature , CLEO/QELS Conference , Baltimore, MD -- May 22, 2005.
  333. Focal Plane Arrays Based on Quantum Dot Infrared Photodetectors , SPIE 2nd International Symposium on Microtechnologies for the New Millennium 2005, Nanotechnology II Conference , Sevilla, Spain -- May 9, 2005.
  334. High Power, Continuous-Wave, Mid-Infrared Quantum Cascade Lasers based on Strain-Balanced Heterostructures , SPIE 2nd International Symposium on Microtechnologies for the New Millennium 2005, Photonics and Optoelectronics Conference , Sevilla, Spain -- May 9, 2005.
  335. High Performance Type II InAs/GaSb Superlattices for Mid, Long, and Very Long Wavelength Infrared Focal Plane Arrays , SPIE International Defense and Security Symposium, Infrared Technology and Applications XXXI Conference , Orlando, FL -- March 28, 2005.
  336. Quantum Dot Based Focal Plane Arrays for Infrared Sensing , AFRL Nano Materials for Defense Applications Symposium , Kona, Hawaii -- February 21, 2005.
  337. High-Power Quantum Cascade Lasers , SPIE International Photonics West Symposium, Novel In-Plane Semiconductor Lasers IV Conference , San Jose, CA -- January 22, 2005.
  338. Deep Ultraviolet Light-Emitting Diodes and Photodetectors for UV Communication , SPIE International Photonics West Symposium, Optoelectronic Integrated Circuits IX , San Jose, CA -- January 22, 2005.
  339. Back-Illuminated Solar-Blind Photodetectors for Imaging Applications , SPIE International Photonics West Symposium, Optoelectronic Integrated Circuits IX , San Jose, CA -- January 22, 2005.
  340. AlGaN-based Deep Ultraviolet Light-Emitting Diodes with Emission Wavelength Below 255 nm , 5th International Conference on Low Dimensional Structures and Devices (LDSD 2004) , Cancun, Mexico -- December 12, 2004.
  341. High Power Quantum Cascade Lasers in the 3-12 mm Wavelength Range , IEEE LEOS Semiconductor Laser Conference , Rio Grande Province, Puerto Rico -- November 7, 2004.
  342. QCL Progress and Outlook , SPIE Europe Symposium on Optics/Photonics in Security and Defence, Optically Based Biological and Chemical Sensing for Defence , London, United Kingdom -- October 27, 2004.
  343. Overview of Activities in IR at the Center for Quantum Devices , Symposium on Infrared Materials and Technologies, Pennsylvania State University , University Park, PA -- October 4, 2004.
  344. Type II Superlattices for Photodetection , DoD Advisory Group on Electron Devices Special Technology Area Review on High Operating Temperature Near Blip Infrared Detectors , Arlington, VA -- September 29, 2004.
  345. Overview of High Power, High Temperature, CW Operation of InP based Quantum Cascade Lasers (QCL) in the Center for Quantum Devices (CQD) at Northwestern University , 5th Quantum Cascade Laser (QCL) Workshop , Freiburg, Germany -- September 23, 2004.
  346. LWIR Focal Plane Array Based on Type-II InAs/GaSb Superlattices , Focal Plane Array Missile Defense Agency/AS Industry Day Meeting , Falls Chruch, VA -- September 14, 2004.
  347. Atomic Engineering of AlGaN for Deep UV Optoelectronic Devices - Contributions from the Center for Quantum Devices , AFOSR Workshop on Nanoscale Issues Nitride Semiconductors , Anchorage, Alaska -- August 22, 2004.
  348. High Temperature Operation InAs Quantum Dot Infrared Photodetectors (QDIP) on InP by MOCVD , SPIE Conference on Infrared Spaceborne Remote Sensing , Denver, CO -- August 2, 2004.
  349. Growth and Characterization of InGaAs/InGaP Quantum Dots for Middle-Wavelength Infrared Focal Plane Array Application , SPIE Conference on Infrared Spaceborne Remote Sensing , Denver, CO -- August 2, 2004.
  350. InP X-ray Detector , DARPA Workshop on X-ray Detectors for Military Space Applications , Arlington, VA -- June 30, 2004.
  351. Short Wavelength Quantum Cascade Lasers for High Temperature Operation , MIOMD-VI Conference , St. Petersburg, Russia -- June 28, 2004.
  352. From Atomic Engineering to Artificial Atoms: Enabling Technologies for the Next Generation of Photonics , National Reconnaissance Office (NRO) JASON Panel Committee Meeting , La Jolla, CA -- June 15, 2004.
  353. High Power Quantum Cascade Lasers at the Center for Quantum Devices , Solid State and Diode Laser Technology Review (SSDLTR) , Albuquerque, NM -- June 8, 2004.
  354. High Power Quantum Cascade Lasers , CLEO/IQEC Conference , San Francisco, CA -- May 16, 2004.
  355. Quantum Dot Infrared Photodetectors (QDIPs) by MOCVD and QDIP Focal Plane Array , CLEO/IQEC Conference , San Francisco, CA -- May 16, 2004.
  356. Recent Advances in Quantum Cascade Lasers at CQD/NU , U.S.-Korea Workshop on Nanoelectronics , Seoul, Korea -- May 10, 2004.
  357. Mimicking Nature with Photonic Technologies , Keynote Speaker, SPIE Photonics Europe , Strasbourg, France -- April 26, 2004.
  358. Nanotechnology at the Center for Quantum Device , Solid State Physics Department, University of Sao Paulo , Sao Paulo, Brazil -- March 30, 2004.
  359. III-Nitride Optoelectronic Materials and Devices at the Center for Quantum Devices , 3rd Annual Meeting of the Cooperative Network for Research on Semiconductor Nanodevices and Nanostructured Materials (NanoSemiMat-3) , Salvador, Brazil -- March 24, 2004.
  360. QDIP vs. QWIP: Theory and Experiment , American Physical Society Meeting, Optical Properties of Nanostructures and Nanophotonics , Montreal, Canada -- March 22, 2004.
  361. Evolution of III-Nitride Technology for Ultraviolet Optoelectronics Applications , 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) , Gyeongju, Korea -- March 16, 2004.
  362. High Sensitivity Quantum-Dot Infrared Photodetectors and Focal Plane Arrays Developed at the Center for Quantum Devices , 2nd Annual U.S. Air Force Research Lab Nano Materials for Defense Applications Symposium, Sensor Materials Session , Wailea, Maui, Hawaii -- February 19, 2004.
  363. High Quantum Efficiency Solar-Blind Photodetectors , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices , San Jose, CA -- January 24, 2004.
  364. High Power and Reliable Semiconductor Laser Diodes for WDM Application , SPIE International Photonics West Symposium, Optoelectronic Integrated Circuits VIII , San Jose, CA -- January 24, 2004.
  365. Nanopillars for Bandgap-Engineering in III-V Optoelectronic Devices , SPIE International Photonics West Symposium, Quantum Dots, Nanoparticles, and Nanoclusters , San Jose, CA -- January 24, 2004.
  366. Modeling Type II InAs/GaSb Superlattices Using Empirical Tight-Binding Method: Interface Engineering , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices , San Jose, CA -- January 24, 2004.
  367. High Power Room Temperature Continuous-Wave Operation of Quantum Cascade Lasers GasMBE , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices , San Jose, CA -- January 24, 2004.
  368. Growth of Deep UV Light Emitting Diodes by Metalorganic Chemical Vapor Deposition , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices , San Jose, CA -- January 24, 2004.
  369. Nanophotonics and Quantum Sensing at the Center for Quantum Devices at ECE/NU , SPIE International Photonics West Symposium, Nano Technical Group Meeting , San Jose, CA -- January 24, 2004.
  370. Overview of Research Activities in the Center for Quantum Devices , Northrop Grumman Corporation , Rolling Meadows, IL -- January 15, 2004.
  371. The Route to High-Power, Continuous-Wave, Quantum Cascade Lasers at Room Temperature , International Workshop on Quantum Cascade Lasers , Sevilla, Spain -- January 4, 2004.
  372. Deep Ultraviolet AlGaN Light-Emitting Diodes , 12th International Workshop on the Physics of Semiconductor Devices (IWPSD) , Madras, Chennai, India -- December 16, 2003.
  373. High Power CW, RT Operation of Quantum Cascade Lasers , 12th International Workshop on the Physics of Semiconductor Devices (IWPSD) , Madras, Chennai, India -- December 16, 2003.
  374. High Power AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Metalorganic Chemical Vapor Deposition , Brazilian Materials Research Society Meeting , Rio de Janeiro, Brazil -- October 26, 2003.
  375. High Performance Quantum Cascade Lasers at the Center for Quantum Devices , Optical Society of America (OSA), Frontiers in Optics Laser Science XIX , Tucson, AZ -- October 7, 2003.
  376. High Power Deep UV AlGaN Light-Emitting Diodes , Optical Society of America (OSA), Frontiers in Optics Laser Science XIX , Tucson, AZ -- October 7, 2003.
  377. Materials Issues for Future Mid-IR Sources and Detectors , Army Research Office (ARO) Workshop on Infrared Physics and Applications , Ann Arbor, MI -- September 29, 2003.
  378. High Power Deep UV Light Emitting Diodes by Metalorganic Chemical Vapor Deposition , 8th Wide Bandgap III-Nitride Workshop , Richmond, VA -- September 29, 2003.
  379. Type II InAs/GaSb Superlattices for High-Performance Photodiodes and FPAs , SPIE Conference on Active and Passive Optical Components for WDM Communications III , Orlando, FL -- September 7, 2003.
  380. Recent Advances in Type II InAs/GaSb VLWIR Detectors , International Conference on Computer, Communication and Control Technologies (CCCT 03) , Orlando, FL -- July 31, 2003.
  381. Very High Average Power Quantum Cascade Lasers by GasMBE , Solid State and Diode Laser Technology Review (SSDLTR) , Albuquerque, NM -- May 20, 2003.
  382. Type II SLS , Missile Defense Agency (MDA)/AS EO/IR Program Review , Arlington, VA -- May 20, 2003.
  383. Recent Advances in GaSb/InAs Superlattices for VLWIR Detector at CQD , Space-Based EO/IR Surveillance Technology Conference , Kirtland AFB, NM -- May 13, 2003.
  384. Passivation of Type II InAs/GaSb Superlattice Photodiodes , New Horizons in Coatings and Thin Films, International Conference on Metallurgical Coatings and Thin Films , San Diego, CA -- March 28, 2003.
  385. Ring Filter and Wavelength Division Multiplexer (WDM) , DARPA Optical Domain Workshop , Arlington, VA -- March 18, 2003.
  386. Improvement in output power of UV LEDs utilizing Current Blocking Layers , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) , Atlanta, GA -- February 16, 2003.
  387. Type II InAs/GaSb Superlattice Infrared Photodiodes , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) , Atlanta, GA -- February 16, 2003.
  388. The First Infrared Focal Plane Arrays based on GaInAs/InP QWIP , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) , Atlanta, GA -- February 16, 2003.
  389. High Performance Quantum Cascade Lasers at l -6 mm , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) , Atlanta, GA -- February 16, 2003.
  390. Development of AlGaN Based UV LED and Lasers (l ~ 280 nm) , DARPA SUVOS Program Review , Dana Point, CA -- February 5, 2003.
  391. OEIC for Next Generation WDM Communications , SPIE International Symposium on Optoelectronics 2003, Optoelectronic Integrated Circuits (OEICs) , San Jose, CA -- January 25, 2003.
  392. Secrets Behind the Invention of High Power Al-free Semiconductor Lasers , SPIE International Symposium on Optoelectronics 2003, Women in Optics Working Group Meeting , San Jose, CA -- January 25, 2003.
  393. Quantum Sensing Using Artificial Atoms: Inspiration from Nature , SPIE International Symposium on Optoelectronics 2003, Quantum Sensing: Evolution and Revolution from Past to Future , San Jose, CA -- January 25, 2003.
  394. Very High Average Power Quantum Cascade Lasers by GasMBE , SPIE International Symposium on Optoelectronics 2003, Quantum Sensing: Evolution and Revolution from Past to Future , San Jose, CA -- January 25, 2003.
  395. Type II Superlattices for VLWIR , AFOSR Semiconductor Materials Program Review Meeting , Anaheim, CA -- January 8, 2003.
  396. Back-Side Illuminated Solar Blind AlGaN Based Ultraviolet Photodiodes , AFOSR Semiconductor Materials Program Review Meeting , Anaheim, CA -- January 8, 2003.
  397. High Performance Quantum Cascade Lasers at l = 6 m , 4th International Conference on Low Dimensional Structures and Devices (LDSD02) , Fortaleza, Brazil -- December 8, 2002.
  398. Quantum Sensing Using Type II InAs/GaSb Superlattices for Infrared Detection , 4th International Conference on Low Dimensional Structures and Devices (LDSD02) , Fortaleza, Brazil -- December 8, 2002.
  399. Next Generation of Infrared Multispectral FPAs: Artificial Eyes Inspiration from Nature , Department of Physics, Temple University , Philadelphia, PA -- November 18, 2002.
  400. Artificial Eyes Based on Semiconductor Quantum Devices: Inspiration from Nature , Department of Physics, University of Missouri-St. Louis , St. Louis, MO -- November 15, 2002.
  401. Quantum Sensing Using Artificial Atoms: Inspiration from Nature , SPIE International Symposium on Photonics Fabrication Europe , Brugge, Belgium -- October 28, 2002.
  402. Artificial Atoms: Next Generation of Infrared Multispectral FPAs , Electrochemical Society Symposium on Narrow Bandgap Optoelectronic Materials and Devices , Salt Lake City, UT -- October 20, 2002.
  403. High Power Quantum Cascade Lasers Grown by GasMBE , International Conference on Solid State Crystals-Materials Science and Applications (ICSSC) , Zakopane, Poland -- October 14, 2002.
  404. Recent advances in III-nitride-based UV optoelectronics , International Conference on Solid State Crystals-Materials Science and Applications (ICSSC) , Zakopane, Poland -- October 14, 2002.
  405. Recent Advances in Quantum Cascade Lasers Grown by GasMBE , 11th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA) , Cheju Island, Korea -- August 20, 2002.
  406. OEIC for Next Generation WDM Communications , ITCOm 2002 + Opticom2002 SPIE Symposium, Active and Passive Optical Components for WDM Communication II , Boston, MA -- July 29, 2002.
  407. Further Advances in Quantum Cascade Laser Performance , Solid State and Diode Laser Technology Review (SSDLTR) , Albuquerque, NM -- June 3, 2002.
  408. High Performance Quantum Cascade Laser Results at the Center for Quantum Devices , EXMATEC 2002 6th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies , Budapest, Hungary -- May 26, 2002.
  409. Artificial Atoms: Solution for Infrared Multicolor Focal Plane Arrays , Quantum IR Structures Session, American Physical Society Meeting , Indianapolis, IN -- March 18, 2002.
  410. AlInGaN/AlInGaN UV LED Grown by Low-Pressure MOCVD , 7th Wide Bandgap III-Nitride Workshop , Richmond, VA -- March 10, 2002.
  411. Type II InAs/GaSb Superlattice Photovoltaic Detector with 50% Cutoff at 18.8 m , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) , Austin, TX -- February 17, 2002.
  412. 9 m High Power, Low Threshold Quantum Cascade Lasers Grown by Gas-Source MBE , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) , Austin, TX -- February 17, 2002.
  413. UV AlInGaN/AlInGaN LED Grown by LP-MOCVD , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) , Austin, TX -- February 17, 2002.
  414. High Performance VLWIR Photodetectors based on InAs/GaSb type-II Superlattices , SPIE International Symposium on Optoelectronics 2002, Photodetector Materials and Devices II , San Jose, CA -- January 21, 2002.
  415. Optoelectronic Integrated Circuit (OEICs) Application in WDM , SPIE International Symposium on Optoelectronics 2002, Optoelectronic Integrated Circuits , San Jose, CA -- January 21, 2002.
  416. Future of AlxGa1-xN Materials and Device Technology for Ultraviolet Photodetectors , SPIE International Symposium on Optoelectronics 2002, Photodetector Materials and Devices VII , San Jose, CA -- January 21, 2002.
  417. Recent Advances and Future Trends in Mid-Infrared Semiconductor Lasers , Contemporary Photonics Technology (CPT) Symposium , Tokyo, Japan -- January 15, 2002.
  418. Artificial Atoms and Molecules: Enabling Technology for the New Millenium , Advanced Workshop on Frontiers in Electronics (WOFE-02) , St. Croix, Virgin Islands -- January 6, 2002.
  419. Quantization for High Performance Infrared Laser Diodes , International Workshop on the Physics of Semiconductor Devices (IWPSD) , Delhi, India -- December 11, 2001.
  420. Recent Advances and Future Trends of InAs/GaSb Superlattice for Very Long Wavelength Infrared Focal Plane Arrays (FPAs) , International Semiconductor Device Research Symposium (ISDRS01) , Washington, DC -- December 5, 2001.
  421. Development of Quantum Cascade Lasers for High Peak Output Power and Low Threshold Current Density , International Semiconductor Device Research Symposium (ISDRS01 , Washington, DC -- December 5, 2001.
  422. Very High Quality p-type AlxGa1-xN/GaN Superlattice , International Semiconductor Device Research Symposium (ISDRS01 , Washington, DC -- December 5, 2001.
  423. Quantum Dots of InAs/GaSb Type II Superlattice for Infrared Sensing , Materials Research Society (MRS) Fall Meeting, Symposium on Progress on Semiconductor Materials for Optoelectronic Applications , Boston, MA -- November 26, 2001.
  424. Low Resistivity AlxGa1-xN/GaN Superlattices for UV Emitters: Development of AlGaN Based UV LED and Lasers (l ~ 280 nm) , III-Nitride UV Emitter Coordination Meeting, DARPA Workshop , University of Texas at Austin, TX -- November 7, 2001.
  425. Overview of CQD Research Activity on Nanotechnology: Toward Atomic Scale , Distinguished Lecture Series, Materials and Nuclear Engineering Department , University of Maryland, MD -- November 2, 2001.
  426. Tuning of QWIPs: New Possibilities , Workshop on Reconfigurable Focal Plane Arrays, Defense Advanced Research Projects Agency , Arlington, VA -- October 22, 2001.
  427. InAs-GaSb Type II Superlattice for VLWIR Detectors , Quantum Electronics Conference , Glasgow, Scotland -- September 3, 2001.
  428. Gated Nano-pillars for Uncooled Tunable Infrared Detectors , 3rd Workshop on the Fabrication, Characterization and Application of III-V Semiconductors , Snowbird, UT -- July 31, 2001.
  429. Type II Superlattices (InAs/GaSb/AlAs): Alternative for MCT for Infrared FPA , SPIE International Symposium on Optical Science and Technology, Materials for Infrared Detectors , San Diego, CA -- July 29, 2001.
  430. Gated Nano-pillars for Uncooled Tunable Infrared Detectors , Future Trends in Microelectronics (FTM): The Nano Millennium , Ile de Bendor, France -- June 25, 2001.
  431. Type II Superlattices for VLWIR , Air Force Office of Scientific Research, Semiconductor Detector Program Review , Williamsburg, VA -- June 4, 2001.
  432. AlxGa1-xN for Solar Blind Focal Plane Arrays , DARPA MTO IR/UV Imaging Technologies Review Meeting , Panama City, FL -- May 22, 2001.
  433. Recent Advances in Mid-Infrared Semiconductor Laser Diodes , Solid State Diode Laser Review (SSDLTR) Conference , Albuquerque, NM -- May 21, 2001.
  434. Quantization for High Performance Infrared Laser Diodes , 1st Annual U.S.-Korea-Japan Workshop on Nanostructure Science/Technology (WNST) , Hanyang University, Seoul, Korea -- April 23, 2001.
  435. Enabling Technologies for the 21st Century, Overview of CQD Research Activity , Review of Center for Optoelectronic Devices, Interconnects and Packaging (COEDIP) , University of Arizona, Tucson -- April 11, 2001.
  436. Quantum Dots of GaN Based Materials for 280 nm Lasers , III-Nitride UV Emitters Study Group Conference, Defense Advanced Research Projects Agency , Arlington, VA -- April 9, 2001.
  437. CQD Vision of the III-V Semiconductor Sb-based Mesoscopic Optoelectronic Devices , Mid-Infrared Optoelectronics Materials and Devices (MIOMD) 4th International Conference , Montpellier, France -- April 1, 2001.
  438. Infrared Quantum Well Laser Diodes: State of the Art and Future Trends , Advanced Research Workshop on Semiconductor Nanostructures , Queenstown, New Zealand -- February 5, 2001.
  439. High Performance Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy , SPIE International Symposium on Optoelectronics 2001, In-Plane Semiconductor Lasers V , San Jose, CA -- January 22, 2001.
  440. Novel Sb-based Alloy for Uncooled Infrared Photodetector Applications , SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI , San Jose, CA -- January 22, 2001.
  441. AlxGa1-xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector Applications , SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI , San Jose, CA -- January 22, 2001.
  442. High Performance Type-II InAs/GaSb Superlattice Photodiodes , SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI , San Jose, CA -- January 22, 2001.
  443. Monolithic Integration of GaInAs/InP Quantum Well Infrared Photodetectors on Si Substrate , SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI , San Jose, CA -- January 22, 2001.
  444. Quantum Dot Infrared Photodetectors Compared with QWIPs , SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI , San Jose, CA -- January 22, 2001.
  445. Enabling Technology for the New Millenium: Toward Atomic Scale , Colloquium Seminar, Department of Physics, University of Illinois at Chicago , Chicago, IL -- January 17, 2001.
  446. AlxGa1-xN for Solar Blind UV Detectors , International Specialist Meeting on Bulk Nitride Growth and Related Techniques , Parana, Brazil -- November 12, 2000.
  447. Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices , 10th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2000) , Cheju Island, Korea -- November 1, 2000.
  448. Uncooled Integrated Sensors , DARPA Optoelectronics Review Meeting , Cincinnati, OH -- October 17, 2000.
  449. High Performance Type-II Superlattices for Uncooled and Very Long Wavelength Infrared Detection , DARPA Optoelectronics Review Meeting , Cincinnati, OH -- October 17, 2000.
  450. Advanced Lasers and Detector Integrated Systems , DARPA Optoelectronics Review Meeting , Cincinnati, OH -- October 17, 2000.
  451. Miniaturization: Enabling Technology for the New Millenium , Keynote Address, International Conference on Solid State Crystals - Materials Science and Application , Zakopane, Poland -- October 9, 2000.
  452. Quantum Sensing , Office of Naval Research , Washington, DC -- September 15, 2000.
  453. Past, Present and Future of Infrared Photodetectors , Air Force Office of Scientific Research , Arlington, VA -- September 14, 2000.
  454. Advanced Lasers and Detector Integrated Systems (ALADINS) , DARPA Photonic Wavelength and Spatial Signal Processing (PWASSP) Review Meeting , Williamsburg, VA -- September 12, 2000.
  455. Quantum Well Infrared Photodetectors (3-20 m) FPA: Monolithic Integration with Si-based ROIC for Low Cost and High Performance , SPIE International Symposium on Optical Science and Technology: Infrared Technology and Applications XXVI , San Diego, CA -- July 30, 2000.
  456. Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices , QWIP Workshop , Dana Point, CA -- July 27, 2000.
  457. Recent Advances and Future Trends of High Power IR Laser Diodes , Tenth International Conference on Laser Optics , St. Petersburg, Russia -- June 26, 2000.
  458. Material Development and Applications for UV Detectors , Nagoya Institute of Technology , Nagoya, Japan -- June 12, 2000.
  459. Low Threshold, High Power Quantum Cascade Lasers Emitting at 9 m Grown by Gas-MBE , Solid State and Diode Laser Technology Review (SSDLTR) , Albuquerque, NM -- June 5, 2000.
  460. Novel Sb-based Materials for Uncooled Infrared Photodetector Applications , Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X) , Sapporo, Japan -- June 5, 2000.
  461. UV Photodetectors , 6th Annual Widegap III-Nitride Workshop 2000 , Richmond, VA -- March 12, 2000.
  462. Current Progress on Infrared (IR) and Ultraviolet (UV) Photodetectors , Rockwell Science Center , Thousand Oaks, CA -- February 28, 2000.
  463. LEO of III-Nitride on Al2O3and Si Substrates , SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V , San Jose, CA -- January 26, 2000.
  464. Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques , SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V , San Jose, CA -- January 26, 2000.
  465. Growth and Characterization of Very Long-Wavelength Type-II Infrared Detectors , SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V , San Jose, CA -- January 26, 2000.
  466. Growth and Characterization of Type-II Non-Equilibrium Photovoltac Detectors for Long-Wavelength Infrared Range , SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V , San Jose, CA -- January 26, 2000.
  467. High-Responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition , SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V , San Jose, CA -- January 26, 2000.
  468. Growth and Optimization of GaInAs/InP Material System for Quantum Well Infrared Photodetector Applications , SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V , San Jose, CA -- January 26, 2000.
  469. Very High-Efficiency AlxGa1-xN p-i-n Solar Blind Ultraviolet Photodetectors , SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V , San Jose, CA -- January 26, 2000.
  470. Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth , 10th International Workshop on Physics of Semiconductor Devices (IWPSD 99) , New Delhi, India -- December 14, 1999.
  471. New Approaches in Uncooled Infrared Photodetectors: Sb-Based III-V Compound Semiconductors , 10th International Workshop on Physics of Semiconductor Devices (IWPSD 99) , New Delhi, India -- December 14, 1999.
  472. Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices , International Semiconductor Device Research Symposium (ISDRS 99) , Charlottesville, VA -- December 1, 1999.
  473. High Quality, Low Noise III-N Photodiodes , International Semiconductor Device Research Symposium (ISDRS 99) , Charlottesville, VA -- December 1, 1999.
  474. First Demonstration of High-Speed Uncooled Type-II Superlattices for Long Wavelength Infrared Detection , International Semiconductor Device Research Symposium (ISDRS 99) , Charlottesville, VA -- December 1, 1999.
  475. Lateral Epitaxial Overgrowth of GaN: Materials and Devices , International Semiconductor Device Research Symposium (ISDRS 99) , Charlottesville, VA -- December 1, 1999.
  476. High Power 3-12 m Laser Diodes: Recent Advances and Future Trends , LEOS Annual Meeting , San Francisco, CA -- November 8, 1999.
  477. Roadmap of Semiconductor Laser Diodes for WDM: Recent Advances and Future Trends , WDM-SA 99 - Wavelength Division Multiplexing - Systems and Applications, National Institute of Standards and Technology (NIST) , Gaithersburg, MD -- November 3, 1999.
  478. GaInAsP-GaAs VLW QWIPs , Air Force Office of Scientific Research Program Review Meeting , Dayton, OH -- September 28, 1999.
  479. Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications , Low Dimensional Structures and Devices (LDSD99) , Alanya, Turkey -- September 15, 1999.
  480. High power mid-infrared III-V semiconductor injection laser diodes , Low Dimensional Structures and Devices (LDSD99) , Alanya, Turkey -- September 15, 1999.
  481. MOCVD Growth and Characterization of GaN on Si Substrates , Gallium Nitride Electronic Device Workshop, Cornell University , Ithaca, NY -- August 16, 1999.
  482. LEO of III-Nitride on Al2 O3 and Si substrates , Lateral Epitaxial Overgrowth (From Theory to Design) Workshop , Juneau, Alaska -- August 2, 1999.
  483. Solard Blind Detectors Arrays , DARPA/MTO Optoelectronics Review Meeting , San Diego, CA -- August 2, 1999.
  484. High Power 3-12 m Semiconductor Lasers: Roadmap for the 21st Century , Workshop on Frontier in Electronics (WOFE-99) , Grenoble, France -- May 30, 1999.
  485. High power InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3-4 m , Conference on Lasers and Electro-Optics (CLEO) , Baltimore, MD -- May 23, 1999.
  486. InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 m grown by low pressure metal-organic chemical vapor deposition , Conference on Lasers and Electro-Optics (CLEO) , Baltimore, MD -- May 23, 1999.
  487. Application of a GaN photodiode for autocorrelation measurements of visible femtosecond pulses , Conference on Lasers and Electro-Optics (CLEO) , Baltimore, MD -- May 23, 1999.
  488. High Power Infrared Injection Laser Diodes (3-10 m) , Diode Laser Technology Review (DLTR) , Ft. Walton Beach, FL -- May 11, 1999.
  489. Highlights of High Power Infrared Injection Laser Diodes (3-10 m) , Naval Research Laboratory , Washington, DC -- May 5, 1999.
  490. High Power 3-5 m InAsSb-based Lasers , DARPA Workshop - Photonic Wavelength and Spatial Signal Processing (WASSP) , Arlington, VA -- May 3, 1999.
  491. Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI) , Naval Research Laboratory , Washington, DC -- March 16, 1999.
  492. Demonstration of Uncooled InAsSb Photodetectors for Military Sensors , DARPA Workshop on Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging , Alexandria, VA -- March 16, 1999.
  493. Recent Advances and Future Trends for Compound Semiconductor Optoelectronic Devices , Compound Semiconductor Outlook 99 Conference , San Diego, CA -- March 1, 1999.
  494. LEO of GaN on sapphire and Si substrates , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 99) , New Orleans, LA -- February 22, 1999.
  495. UV, MSM and p-i-n detectors, UV blue laser diodes , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 99) , New Orleans, LA -- February 22, 1999.
  496. Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  497. Electrical Characterization of AlxGa1-xN for UV Photodetector Applications , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  498. Multi-color 4-20 m InP-based Quantum Well Infrared Detectors , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  499. Room Temperature InAsSb for Long Wavelength Photovoltaic Detectors , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  500. Growth and Characetrization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  501. Demonstration of InAsSb/AllnSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 m Wavelength Range , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  502. Internal Street Around Micropipes in 6H-SiC Substrates , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  503. Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  504. AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  505. Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  506. Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
  507. Recent Advances in Semiconductor Infrared Lasers , Chemistry Department, Texas A&M University , College Station, TX -- December 10, 1998.
  508. Development of high-performance III-Nitride-based semiconductor devices , 9th International Symposium on the Physics of Semiconductors and Applications (ISPSA-98) , Seoul, Korea -- November 6, 1998.
  509. Growth and Characterization of InAsGaSb Type II Superlattices for 8-12 m Room Temperature Detectors , 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society , Boston, MA -- November 5, 1998.
  510. Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD , 6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society , Boston, MA -- November 5, 1998.
  511. Recent Advance of III-Nitrides for Photonic and Optoelectronic Devices , International Conference on Solid State Crystals - Materials Science and Applications , Zakopane, Poland -- October 12, 1998.
  512. Uncooled Long-Wavelength Infrared Photodetectors Using Narrow Band Gap Semiconductors , International Symposium on Compound Semiconductors (ISCS) , Nara, Japan -- October 12, 1998.
  513. Mid-Infrared Type II Bipolar LEDs and Lasers for Chemcial Sensing , OSA Annual Meeting/Interdisciplinary Laser Science Conference XIV , Baltimore, MD -- October 4, 1998.
  514. Quantum Well Infrared Photodetectors (QWIPs) for IR Imaging , Physics at the Turn of the 21st Century Conference , St. Petersburg, Russia -- September 28, 1998.
  515. Recent Advance fo Mid-Infrared Semiconductor Lasers , Semiconductor Science and Technology 98 , La Jolla, CA -- September 7, 1998.
  516. Growth of InGaAs/InGaP Quantum Dots Light Emitting Sources by Low-Pressure MOCVD , 4th International Conference on Electronic Materials (ICEM-98) , Cheju Island, Korea -- August 24, 1998.
  517. Growth and Characterization of InGaAs/InGaP Quantum Dots for Mid-Infrared Photodetectors , 4th International Conference on Electronic Materials (ICEM-98) , Cheju Island, Korea -- August 24, 1998.
  518. Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs (l = 0.808 m) Laser Diodes , 4th International Conference on Electronic Materials (ICEM-98) , Cheju Island, Korea -- August 24, 1998.
  519. Lateral Epitaxial Overgrowth of GaN Thin Films on Sapphire and Silicon , Wide Bandgap Nitride Semiconductor Workshop , St. Louis, MO -- August 4, 1998.
  520. Exploration of the Entire Spectrum of III-V Semiconductors for Opto-electronics , 23rd International Summer College on Physics and Contemporary Needs , Bhurban, Pakistan -- June 26, 1998.
  521. 21st Century: The Final Frontier for III-Nitride Materials and Devices , Future Trends in Microelectronics , Ile des Embiez, France -- May 31, 1998.
  522. InAsSb(P)-based Interband Mi-Infrared (3-5 m) Laser: Problems and Future Directions , CLEO Conference, Semiconductor Laser Workshop" , San Francisco, CA -- May 8, 1998.
  523. Low Threshold Aluminum Free GaInN/GaN Multi-Quantum Well Blue Lasers: Material growth, Characterization, Device Fabrication and Testing , Cornell University , Ithaca, NY -- March 10, 1998.
  524. Quantum Cascade Lasers Grown by Gas-Source Molecular beam Epitaxy , Diode Laser Technology Review (DLTR) , Albuquerque, NM -- March 2, 1998.
  525. High Power InAsSb/InPAsSb/InAs Mid-Infrared Lasers , Diode Laser Technology Review (DLTR) , Albuquerque, NM -- March 2, 1998.
  526. Growth, Characterization and Device Fabrication of Mid-Infrared Type II Bipolar Lasers , Diode Laser Technology Review (DLTR) , Albuquerque, NM -- March 2, 1998.
  527. Narrow gap semiconductor photodiodes , SPIE Photonics West '98, Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
  528. Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors , SPIE Photonics West '98, Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
  529. Electrical transport properties of highly doped N-type GaN epilayers , SPIE Photonics West '98, Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
  530. Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors grown by gas-source molecular beam epitaxy , SPIE Photonics West '98, Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
  531. Multiple quantum well structures for multicolor infrared detectors , SPIE Photonics West '98, Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
  532. GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio , SPIE Photonics West '98, Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
  533. Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applications , SPIE Photonics West '98, Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
  534. 8.5 m room-temperature quantum cascade lasers grown by gas-source molecular beam epitaxy , SPIE Photonics West '98, Integrated Optic Devices II , San Jose, CA -- January 24, 1998.
  535. Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition , SPIE Photonics West '98, In-Plane Semiconductor Laser , San Jose, CA -- January 24, 1998.
  536. Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials , 9th International Workshop on Physics of Semiconductor Devices (IWPSD) , New Delhi, India -- December 16, 1997.
  537. New Developments in III-Nitride Material and Device Applications , 9th International Workshop on Physics of Semiconductor Devices (IWPSD) , New Delhi, India -- December 16, 1997.
  538. InP-based Multi-Spectral Quantum Well Infrared Photodetectors , International Semiconductor Device Research Symposium (ISDRS 97) , Charlottesville, VA -- December 11, 1997.
  539. Mid-Infrared Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy , International Semiconductor Device Research Symposium (ISDRS 97) , Charlottesville, VA -- December 11, 1997.
  540. Trends in Optoelectronics , Conference on Gallium Arsenide & Other Compound Semiconductors , San Diego, CA -- November 12, 1997.
  541. Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive Optical Communication and Processing Applications , SPIE Conference, Design and Manufacturing of WDM Devices , Dallas, TX -- November 4, 1997.
  542. Sb-based Infrared Materials for Uncooled Photodetector Applications , 192nd Meeting of the Electrochemical Society, Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays-Physcs and Applications , Paris, France -- August 31, 1997.
  543. III-Nitrides Grown Using Trimethygallium and Triethylgallium , 19th International Conference on Defects in Semiconductors (ICDS) , Aveiro, Portugal -- June 21, 1997.
  544. High Power Midwave-Infrared InAsSb/InPAsSb Lasers for 3-5 m , Diode Laser Technology Review Meeting , Albuquerque, NM -- June 9, 1997.
  545. Microscopes: Tools for Probing Atomic Arrangements in Semiconductor Thin Films , Scanning Microscopy Meeting, Formation and Properties of Nanoscaled Structures Symposium , Chicago, IL -- May 12, 1997.
  546. Exploration of entire range III-V semiconductor materials and devices , Department of Electrical Engineering , University of Notre Dame, IN -- April 22, 1997.
  547. Quantum Well Infrared Photodetectors (QWIPs) , Electrical Engineering and Computer Science Department , University of Illinois at Chicago, IL -- April 3, 1997.
  548. Heteroepitaxial AlGaN films for ultraviolet photodetector applications , III-Nitride Workshop , St. Louis, MO -- March 11, 1997.
  549. MBE of InSb for focal plane arrays , SPIE Photonics West '97, Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
  550. Growth models of GaN thin films based on crystal chemistry , SPIE Photonics West '97, Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
  551. InAsSb/InAsSbP high-power laser diodes emitting 3-5 m range on InAs and GaSb substrates , SPIE Photonics West '97, Integrated Optics Devices: Potential and Commercialization Conference , San Jose, CA -- February 8, 1997.
  552. Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for l = 808 and 980 nm , SPIE Photonics West '97, In-Plane Semiconductor Lasers , San Jose, CA -- February 8, 1997.
  553. InSb growth on (111) and (100) GaAs and Si substrates for near room temperature focal plane arrays , SPIE Photonics West '97, Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
  554. InTlSb and InAsSb for 8-12 m near room temperature operation , SPIE Photonics West '97, Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
  555. Very long wavelength GaAs/GaInP quantum Weiol infrared photodetectors , SPIE Photonics West '97, Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
  556. AlGaN ultraviolet detectors , SPIE Photonics West '97, Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
  557. Intrinsic AlGaN photoconductors for the entire compositional range , SPIE Photonics West '97, Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
  558. Infrared Imaging Arrays Using Advanced III-V Materials , Advanced Workshop on Frontiers in Electronics (WOFE) , Canary Islands, Spain -- January 6, 1997.
  559. High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 m Range , Materials Research Society Fall Meeting , Boston, MA -- December 2, 1996.
  560. GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 m Focal Plane Array Infrared Imaging , Materials Research Society Fall Meeting , Boston, MA -- December 2, 1996.
  561. Very Low Dislocation Densities in GaN-AlGaN Heterostructures, , Materials Research Society Fall Meeting , Boston, MA -- December 2, 1996.
  562. High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates , Materials Research Society Fall Meeting , Boston, MA -- December 2, 1996.
  563. Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays , Materials Research Society Fall Meeting , Boston, MA -- December 2, 1996.
  564. Recent Advances in III-Nitride Materials, Characterization and Device Applications , 8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96) , Seoul, Korea -- October 21, 1996.
  565. Sb-based Infrared FPA on GaAs and Si , DARPA/ETO Optoelectronics Program Review , Orlando, FL -- October 7, 1996.
  566. Recent Advances in III-Nitride Materials, Characterization and Device Applications , XII Conference on Solid State Crystals, Materials Science and Applications , Zakopane, Poland -- October 7, 1996.
  567. III-V Interband and Intraband Far-Infrared Detectors , 23rd International Symposium on Compound Semiconductors , St. Petersburg, Russia -- September 23, 1996.
  568. GaAs-GaInP(As) p-type and n-type QWIPs , Air Force Office of Scientific Research Semiconductor and Electromagnetic Materials Review , Wright-Patterson AFB, OH -- August 22, 1996.
  569. Epitaxial Growth of III-V Nitride Wide Bandgap Semiconductors , Air Force Wright Laboratory , Wright-Patterson AFB, OH -- June 17, 1996.
  570. Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 m Range , CLEO/QELS '96 , Anaheim, CA -- June 2, 1996.
  571. MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density Less than 10^7 cm^-2 , International Symposium on Nitrides , St. Malo, France -- May 29, 1996.
  572. Development of III-Nitride Technology for Optoelectronic Devices , DARPA/ETO GaN Workshop , Reston, VA -- May 9, 1996.
  573. MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers , IEEE 9th International Conference on Semiconducting and Insulating Materials , Toulouse, France -- April 29, 1996.
  574. Wide Bandgap III-Nitride Semiconductors and Their Applications , Electrical Engineering Department, University of Minnesota , Minneapolis, MN -- March 28, 1996.
  575. The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems , SPIE Photonics West '96, "WDM Components" , San Jose, CA -- January 27, 1996.
  576. Semiconductor Ultraviolet Detectors , SPIE Photonics West '96, "WDM Components" , San Jose, CA -- January 27, 1996.
  577. Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 m Range , SPIE Photonics West '96 , San Jose, CA -- January 27, 1996.
  578. UV Photodetectors Based on AlGaN Grown by MOCVD , SPIE Photonics West '96 , San Jose, CA -- January 27, 1996.
  579. GaN, GaAlN, and AlN for Use in UV Detectors for Astrophysics: An Update , SPIE Photonics West '96 , San Jose, CA -- January 27, 1996.
  580. Optical Absorption and Photoresponse in Fully Quaternary p-type Quantum Well Detectors , SPIE Photonics West '96 , San Jose, CA -- January 27, 1996.
  581. Photoconductivity in N-type GaN , Materials Research Society Fall Meeting , Boston, MA -- November 27, 1995.
  582. Spectral Response of GaN p-n-Junction Photovoltaic Structure , Materials Research Society Fall Meeting , Boston, MA -- November 27, 1995.
  583. Characterization of InGaP Regrown on Patterned Wafers by MBE , Materials Research Society Fall Meeting , Boston, MA -- November 27, 1995.
  584. Growth of GaN Without Yellow Luminescence , Materials Research Society Fall Meeting , Boston, MA -- November 27, 1995.
  585. MOCVD Growth of Quantum Devices , Heterostructure Epitaxy and Devices (HEAD '95) , Smolenice, Slovakia -- October 15, 1995.
  586. Background Limited Performance in p-doped GaAs/GaInAsP QWIPs , 188th Meeting of the Electrochemical Society , Chicago, IL -- October 8, 1995.
  587. Characterization of a Normal Incidence p-doped GaAs/GaInP QWIP , 188th Meeting of the Electrochemical Society , Chicago, IL -- October 8, 1995.
  588. Long Wavelength InAsSb-based Heterostructure Infrared Photodetectors , 188th Meeting of the Electrochemical Society , Chicago, IL -- October 8, 1995.
  589. High Power Semiconductor Diode Lasers , Center for Nonlinear Optical Materials (CNOM) Annual Affiliates Meeting , Stanford University -- September 19, 1995.
  590. Sb-based Materials for Long Wavelength Infrared Focal Plane Arrays , International Symposium on Compound Semiconductors (ISCS-22) , Cheju Island, Korea -- August 29, 1995.
  591. (Ga, In)(As, P) Superlattices for Optoelectronic Applications , 8th International Conference on Superlattices, Microstructures, Microdevices (ICSMM-8) , Cincinnati, OH -- August 20, 1995.
  592. III-Nitride Semiconductor Materials for Future Optoelectronics , Physics of Semiconducting Compounds , Jaszowiec, Poland -- May 29, 1995.
  593. High Power Laser Diodes , International Symposium on Low Dimensional Structures and Devices (LDSD '95) , Singapore -- May 8, 1995.
  594. Future Semiconductor Materials for Optoelectronics , International Symposium on Heterostructures in Science and Technology , Wurzburg, Germany -- March 13, 1995.
  595. Theoretical investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers , Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting , Boston, MA -- November 1, 1994.
  596. Optimization of InGaAsP/GaAs Laser Diode Processing for High-Power Operation , Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting , Boston, MA -- November 1, 1994.
  597. Exploration in the Whole Spectrum of III-V Semiconductors for Optoelectronic Device Applications , Department of Electrical and Computer Engineering, University of California at Davis , Davis, CA -- October 28, 1994.
  598. Exploration in the Whole Spectrum of III-V Semiconductors , 1st International Conference on Materials for Microelectronic , Barcelona, Spain -- October 17, 1994.
  599. Development of InTlSb Infrared Photodetectors Grown by LP-MOCVD , The Electrochemical Society Meeting on 2-20m Wavelength Infrared Detectors: Physics and Applications , Miami Beach, FL -- October 11, 1994.
  600. Peculiarities of Operation Characteristics of High-Power InGaAsP/GaAs 0.8 m Laser Diodes , IEEE 14th International Semiconductor Laser Conference , Maui, Hawaii -- September 19, 1994.
  601. Novel Devices , Advanced Research Projects Agency/Microelectronics Technology Office (DARPA/MTO) Program Reviews , Alexandria, VA -- June 9, 1994.
  602. InGaAsP/GaAs High-Power Lasers for Nd:YAG Pumping , Conference on Lasers and Electro-Optics (CLEO '94) , Anaheim, CA -- May 8, 1994.
  603. Physics and Applications of Advanced Semiconductor Technology and Future Trends , Physics Department, University of Western Ontario , London, Canada -- March 9, 1994.
  604. GaN Based Materials for Blue Lasers , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD '94) , San Francisco, CA -- February 20, 1994.
  605. InGaAsP/GaAs diode lasers for Nd:YAG pumping , SPIE Conference OE/LASE '94 , Los Angeles, CA -- January 24, 1994.
  606. Growth of III-V Nitrides , National Research Council, Committee on Materials for High-Temperature Semiconductor Devices , Washington, DC -- December 14, 1993.
  607. Optoelectronic Research at Northwestern and Industry Relations , Italian Trade Commission and Northwestern's International Business Development Program , Chicago, IL -- December 9, 1993.
  608. Optoelectronic Materials and Devices , University of Arizona , Tucson, AZ -- November 18, 1993.
  609. Materials for Bloch Oscillations Devices , Army Research Office, Bloch Oscillations Workshop , Research Triangle Park, NC -- September 13, 1993.
  610. GaN via MOCVD , Office of Naval Research, Electronic/Optical Materials Program review , Arlington, VA -- June 14, 1993.
  611. Thermal Stability of GaN Thin Films Grown by MOCVD on 6H-SiC and Sapphire Substrates , U.S. Naval Research Laboratory, Tri-Service SIC Workshop , Washington, DC -- May 13, 1993.
  612. Next Generation Semiconductor Materials for High Performance Optoelectronic Devices , Institute of Electrical and Electronic Engineers (IEEE), Motorola, Inc., IEEE Electron Devices Society Chapter Meeting , Schaumburg, IL -- May 5, 1993.
  613. Optoelectronic Material , Consultate General of France, University of Michigan-Ann Arbor, National Science Foundation, and U.S. Air Force Office of Scientific Research, French and American Midwestern Symposium , Ann Arbor, MI -- April 28, 1993.
  614. InGaAsP Diodes , U.S. Air Force Phillips Laboratory, Diode Laser Technology Program Conference , Albuquerque, NM -- April 20, 1993.
  615. Semiconductor Materials and Their Applications , School of Electrical Engineering, Cornell University , Ithaca, NY -- March 30, 1993.
  616. Current and Future Objectives of the Center for Quantum Devices , Department of Physics and Astronomy, Northwestern University , Evanston, IL -- February 10, 1993.

PhD Degrees Conferred

  1. Dr. Anh Hoang, Dissertation Title: Theoretical design and material growth of Type-II Antimonide-based superlattices for multi-spectral detection and imaging, Graduated: June 2016
  2. Prof. Abbas Haddadi, Dissertation Title: Type-II Antimonide-based Superlattices for High Performance Infrared Detectors and Imagers, Graduated: August 2015, Current Appointment: Research Assistant Professor, Northwestern University, Evanston IL
  3. Dr. Neelanjan Bandyopadhyay, Dissertation Title: Modeling, design, growth, & characterization of strain balanced quantum cascade lasers (3-11 um), grown by gas-source molecular beam epitaxy, Graduated: June 2015, Current Appointment: R&D
  4. Dr. Andy Guanxi Chen, Dissertation Title: Type-II InAs/GaSb Superlattices Photodetector for 3rd Generation Infrared Imaging, Graduated: January 2015, Current Appointment: Intel
  5. Dr. Simeon Bogdanov, Dissertation Title: Planar Engineering for Dark Current Suppression in Type-II Superlattice Infrared Photodiodes, Graduated: April 2014, Current Appointment: Research Scientist, Purdue University
  6. Dr. Kevin Kim, Dissertation Title: Advanced Design Techniques for Si LDMOS RFIC Operation Beyond 2GHz, Graduated: June 2013, Current Appointment: Senior Manager R&D, RFIC at Infineon Technologies, San Francisco, California
  7. Dr. Stanley Tsao, Dissertation Title: Quantum dot-quantum Well Infrared Photodetectors for Focal Plane Arrays, Graduated: June 2013, Current Appointment: Vice President, CETA Software Solutions
  8. Dr. Edward Kwei-wei Huang, Dissertation Title: Multi-spectral Infrared Photodetectors and Focal Plane Arrays based on Band-engineered Type-II InAs / GaSb Superlattices and its Variants, Graduated: June 2013, Current Appointment: Senior Engineer, Teledyne Scientific and Imaging
  9. Dr. Siamak Abdollahi Pour, Dissertation Title: Theoretical investigation, design and characterization of type-II InAs/GaSb material and photodetectors aimed at realization of high performance, high temperature and low cost infrared detection and imaging, Graduated: June 2012, Current Appointment: Senior Manager of Strategy and M&A at Microsoft, Chicago, Illinois
  10. Dr. Yanbo Bai, Dissertation Title: High Wallplug Efficiency Quantum Cascade Lasers, Graduated: June 2011, Current Appointment: Research Assistant Professor, Northwestern University, Evanston, IL
  11. Dr. Can Bayram, Dissertation Title: III-NITRIDE OPTOELECTRONIC DEVICES: AlGaInN Gap Engineering from Ultraviolet and Visible Wavelengths towards Terahertz Regime, Graduated: June 2011, Current Appointment: Postdoctoral Research Scientist Thomas J. Watson Research Center, Yorktown Heights, New York
  12. Dr. Burç Gökden, Dissertation Title: Photonic Crystal Distributed Feedback Quantum Cascade Lasers, Graduated: June 2011, Current Appointment: Integration Engineer at Intel Corporation, Portland, Oregon
  13. Dr. Binh-Minh Nguyen, Dissertation Title: Theoretical Design and Material Growth of Type-II Antimonide-based Superlattices for Infrared Detection and Imaging, Graduated: December 2010, Current Appointment: Director's Postdoctoral Fellow at Los Alamos National Laboratory, Albuquerque, New Mexico
  14. Dr. Pierre-Yves Delaunay, Graduated: June 2010, Current Appointment: Research engineer at Hughes Research Laboratories (HRL), Santa Monica, California
  15. Dr. Darin Hoffman, Dissertation Title: Minority carrier dynamics of type-II InAs/GaSb superlattice photodiodes via optical and electrical characterization, Graduated: December 2009, Current Appointment: Price to Win Lead at Raytheon Space and Airborne Systems, Los Angeles, CA
  16. Dr. Kathryn Minder, Dissertation Title: AlGaN UV Optoelectronic Devices: Device Design, Fabrication and Characterization, Graduated: December 2008, Current Appointment: Raytheon Systems, Waltham, MA
  17. Dr. Allan J. Evans, Dissertation Title: GasMBE Growth and Characterization of Strained Layer InP-GaInAs-AlInAs Quantum Cascade Lasers, Graduated: June 2008, Current Appointment: Program Manager for National & DoD Space / Advanced Technologies, Teledyne Scientific and Imaging, Camarillo, CA
  18. Dr. Jean Nguyen, Dissertation Title: Dielectric Thin Films by Ion-Beam Sputtering Deposition for III-V based Infrared Optoelectronic Imaging, Graduated: June 2008, Current Appointment: Patent Agent at Morrison & Foerster LLP, San Francisco, California
  19. Dr. Ho-Chul Lim, Dissertation Title: Modeling of Quantum Dot Infrared Photodetectors, Graduated: December 2007, Current Appointment: Process Engineer, Intel Corporation, Portland, Oregon
  20. Dr. Andrew Hood, Dissertation Title: Surface Passivation and performance characteristics of type-II InAs-GaSb Superlattice infrared detectors for FPAs, Graduated: December 2007, Current Appointment: FLIR Electro-Optical Components; Ventura, California
  21. Prof. Ryan McClintock, Dissertation Title: UV Photodetectors, Focal Plane Arrays, and Avalanche Photodiodes, Graduated: June 2007, Current Appointment: Research Associate Professor, Northwestern University, Evanston IL
  22. Dr. Wei Zhang, Dissertation Title: Quantum dot infrared photodetectors (QDIPs)., Graduated: June 2006, Current Appointment: Staff Scientist, Veeco Corporation, Turbodisc Division, Summerset, New Jersy
  23. Dr. Alireza Yasan, Dissertation Title: Ultraviolet light emitters based on Al(x)Ga(1-x)N/AlN quantum structures., Graduated: June 2006, Current Appointment: Sensor manager at Heptagon Advanced Micro Optics , San Francisco, California
  24. Dr. Aaron Gin, Dissertation Title: Electron beam lithography for the fabrication of nanopillars in type II InAs/GaSb superlattices for multicolor infrared focal plane arrays, Graduated: December 2005, Current Appointment: Pattent Agent, McDonnell Boehnen Hulbert & Berghoff, LLP
  25. Dr. Yajun Wei, Dissertation Title: Type II InAs/GaSb superlattice photodiodes and infrared focal plane arrays, Graduated: December 2005, Current Appointment: Technology Development Engineer at L-3 Communications , Austin, Texas
  26. Dr. Jutao Jiang, Dissertation Title: Infrared focal plane array based on GaInAs/InP quantum well infrared photodetectors, Graduated: June 2004, Current Appointment: Manager, Sensor Characterization/Test/ISP at SiOnyx Inc., Portland, Oregon
  27. Prof. Steven Slivken, Dissertation Title: Quantum cascade lasers grown by gas-source molecular beam epitaxy, Graduated: June 2002, Current Appointment: Research Associate Professor; Northwestern University, Evanston, IL
  28. Prof. Hooman Mohseni, Dissertation Title: Type-II InAs/GaSb superlattices for infrared detectors, Graduated: June 2001, Current Appointment: Professor, Northwestern University, Evanston, IL
  29. Dr. Matthew Erdtmann, Dissertation Title: GaInAs/InP quantum well infrared photodetectors on Si substrate for low-cost focal plane arrays, Graduated: June 2001, Current Appointment: Senior Engineer at Agiltron, Woburn, MA
  30. Dr. Brett Lane, Dissertation Title: Low-pressure metal organic chemical vapor deposition growth of InAsSbP based materials for infrared laser applications, Graduated: June 2001, Current Appointment: Panduit Corporation, Orland Park, IL
  31. Dr. Joseph Wojkowski, Dissertation Title: Investigation of InAsSb-based uncooled infrared photodiodes for the proximity fuze application, Graduated: June 2001, Current Appointment: Senior Manager at Protiviti, Chicago
  32. Dr. Danielle Walker, Dissertation Title: Aluminum gallium nitride ultraviolet photodetectors : device design, fabrication and characterization, Graduated: June 2000, Current Appointment: senior director of the Semiconductor Technology Lab for General Electric, Schenectady, NY
  33. Dr. Patrick Kung, Dissertation Title: III-nitride semiconductor films and device structures grown by low pressure MOCVD, Graduated: June 2000, Current Appointment: Professor, Alabama University
  34. Dr. Jaejin Lee, Dissertation Title: Exploration of Bi and Tl containing III-V materials for uncooled long-wavelength infrared photodetector applications, Graduated: June 2000, Current Appointment: Ajou University, SOUTH KOREA
  35. Dr. Seongsin Kim, Dissertation Title: MOCVD growth and characterization of epitaxial quantum dots for optoelectronic devices, Graduated: December 1999, Current Appointment: Professor, Alabama University
  36. Dr. Di Wu, Dissertation Title: MOCVD growth and characterization of InAsSb/InAs(SbP) on InAs substrate for the mid-infrared laser applications, Graduated: June 1999, Current Appointment: Sienna Technologies, Inc., Woodinville, WA
  37. Dr. Jedon Kim, Dissertation Title: Investigation of InAsSb material system for uncooled long-wavelength infrared photodetector applications, Graduated: June 1999, Current Appointment: Samsung Electronics Co., SOUTH KOREA
  38. Dr. Erick Michel, Dissertation Title: Sb-based materials for infrared photodetectors : growth, characterization, fabrication, and analysis, Graduated: December 1998, Current Appointment: Patent Agent for McAndrews Held & Malloy, Ltd., Chicago, IL
  39. Dr. Xiaolong Zhang, Dissertation Title: Investigation of optical properties of III-nitrides, Graduated: December 1998, Current Appointment: Onetta, Sunnyvale, CA
  40. Dr. Hyuk-Jong Yi, Dissertation Title: Modeling and analysis of Al-free near- and mid-infrared semiconductor lasers, Graduated: June 1998, Current Appointment: Tri-Quint Semiconductor, Inc., Breinigsville, PA
  41. Dr. Adam Saxler, Dissertation Title: Exploration of LP-MOCVD grown III-nitrides on various substrates, Graduated: June 1998, Current Appointment: Cree Research, Inc., Durham, NC
  42. Dr. Christoper Jelen, Dissertation Title: Ga(x)In(1-x)As(y)P(1-y)-based n-type long wavelength quantum well infrared photodetectors: Growth, characterization, and fabrication, Graduated: June 1998, Current Appointment: Consulting Engineer (Physicist T6) at Northrop Grumman Electronic Systems, Rolling Meadows, IL
  43. Dr. Ivan Eliashevich, Dissertation Title: Radiative properties of high-power 808 nm aluminum-free laser diodes, Graduated: June 1997, Current Appointment: Director of R&D at Emcore Corporation's EMD division, Somerset, NJ
  44. Dr. Jacqueline Diaz, Dissertation Title: Fabrication of high power aluminum - free 0.9 γm to 1.0 γm InGaAsP/InGaP/GaAs lasers for optical pumping, Graduated: June 1997, Current Appointment: Emcore Corporation, US
  45. Dr. James Hoff, Dissertation Title: Quaternary GA(1-X)IN(X)AS(Y)P(1-Y) P-type quantum well intersubband photodetectors, Graduated: December 1996, Current Appointment: Fermi National Laboratory, Batavia, IL
  46. Dr. Yeun-Ho Choi, Dissertation Title: Growth and characterization of InSb and InTISb narrow-bandgap materials for infrared detector applications., Graduated: December 1995, Current Appointment: LG Electronics Institute of Technology, SOUTH KOREA
  47. Dr. Xiaoguang He, Dissertation Title: MOCVD growth and characterization of Ga(x)In(1-x)As(y)P(1-y) on GaAs substrate for optoelectronic device applications, Graduated: June 1995, Current Appointment: Vice President -- Sanan Electronics Co., Ltd. CHINA
  48. Dr. Chien-Jen Sun, Dissertation Title: MOCVD growth and characterization of III-nitride for optoelectronic device applications, Graduated: December 1994, Current Appointment: Deputy director of Optoelectronics Device and System Application Division of Electronics & Optoelectronics Research Laboratories (EOL) under the government-backed Industrial Technology Research Institute (ITRI)
  49. Dr. Cengiz Besikci, Dissertation Title: Advanced modeling concepts and material considerations for III-V heterostructure electron devices on GaAs substrates, Graduated: June 1994, Current Appointment: Professor at Middle East Technical University, TURKEY
  50. Dr. Kamran Mobarhan, Dissertation Title: nGaAsP / InP 1.3 μm double heterostructure laser grown on Si substrate by metalorganic vapor phase epitaxy, Graduated: June 1994, Current Appointment: Program Manager - New Product Development at NeoPhotonics de C.V.

Masters Degrees Conferred

  1. David Heydari, Dissertation Title: Efficient power scaling and beam quality control for high power quantum cascade lasers, Graduated: June 2016, Current Appointment: NSF Fellow & PhD Student @ Stanford University
  2. Prof. Abbas Haddadi, Graduated: March 2015, Current Appointment: Research Assistant Professor, Northwestern University, Evanston IL
  3. Yinjun Zhang , Dissertation Title: III-Nitride LEDs, Graduated: June 2013
  4. Anisa Myzaferi, Graduated: December 2010
  5. Maho Taguchi, Dissertation Title: Quantum Dot Infrared Photodetectors, Graduated: December 2006
  6. John Szafraniec, Dissertation Title: Theoretical Analysis of Quantum Cascade Lasers, Graduated: June 2006
  7. Adnan Bajowala, Dissertation Title: Type-II Superlattices for Uncooled 8-12 μm Detectors, Graduated: December 2004
  8. Anthony Matlis, Dissertation Title: Fabrication of DFB Quantum Cascade Lasers, Graduated: June 2002
  9. Peter Sandvik, Dissertation Title: Design and Development of UV and Solar-Blind AlxGa1-xN P-I-N Photodetectors, Graduated: June 2001
  10. Markus Rutz, Dissertation Title: Electron Count Simulation of QWIPs, Graduated: June 2000
  11. Jia-Jiun Wu, Dissertation Title: LP-MOCVD Growth and Characterization of III-Nitrides, Graduated: December 1999
  12. Dr. Joseph Wojkowski, Dissertation Title: Uncooled InAsxSb1-x Infrared Photodetectors for the 5-8 μm Atmospheric Absorption Spectrum, Graduated: June 1999, Current Appointment: Senior Manager at Protiviti, Chicago
  13. Tso-Chun Wang, Dissertation Title: High Resolution X-ray Diffraction Characterization of III-Nitrides Grown by MOCVD, Graduated: December 1997
  14. Yii-Li Cho, Dissertation Title: Dark Current in the Quantum Well Infrared Photodetectors, Graduated: December 1996
  15. Gregory Lukas, Dissertation Title: Aspects in the Development and Application of Semiconductor Laser Diodes, Graduated: December 1996
  16. Dr. Adam Saxler, Dissertation Title: LP-MOCVD Growth and Characterization of III-Nitrid..., Graduated: December 1994, Current Appointment: Cree Research, Inc., Durham, NC
  17. Gurpreet Singh, Dissertation Title: MBE Growth and Characerization of InSb for Far Infrared Photodetectors, Graduated: December 1994
  18. S.Z. Lin, Dissertation Title: Characterization of GaAs/GaInP Superlattices and Single Heterojunctions by High Resolution X-Ray Diffraction, Graduated: June 1992
  19. Dr. Yeun-Ho Choi, Dissertation Title: Design, construction and implementation of chemical bevel revelation for characterization of III-V semiconductors, Graduated: June 1992, Current Appointment: LG Electronics Institute of Technology, SOUTH KOREA

Visiting Scholars Hosted

  1. Dr. Pouya Dianat, Country of Origin: Iran, Visit period: April 2015 - April 2017
  2. Dr. Sourav Adhikary, Country of Origin: India, Visit period: January 2015 - December 2016
  3. Dr. Yiyun Zhang, Country of Origin: China, Visit period: November 2016 - Present
  4. Dr. Jihyeon Park, Country of Origin: Korea, Visit period: October 2016 - Present
  5. Dr. Saumya Sengupta, Country of Origin: India, Visit period: March 2015 - September 2016
  6. Dr. Yoann Robin, Country of Origin: France, Visit period: January 2015 - August 2016
  7. Benoît Guillermain, Country of Origin: France, Visit period: April 2016 - August 2016
  8. David Heydari, Country of Origin: USA, Visit period: October 2012 - August 2016
  9. Laura Whittenburg, Country of Origin: USA, Visit period: May 2016 - August 2016
  10. Tessa Haldes, Country of Origin: USA, Visit period: March 2016 - August 2016
  11. Tommy Holmes, Country of Origin: USA, Visit period: January 2016 - August 2016
  12. Dr. Kai Ding, Country of Origin: China, Visit period: September 2015 - July 2016
  13. Dr. Santanu Manna, Country of Origin: India, Visit period: May 2016 - Present
  14. Alexis Ghermaoui, Country of Origin: France, Visit period: April 2016 - August 2016
  15. Dr. Bijan Movaghar, Country of Origin: United Kingdom, Visit period: February 2004-June 2006, January 2008 - May 2008, February 2014-February 2016, September 2016-Present
  16. Ilkay Demir, Country of Origin: Turkey, Visit period: December 2014 - January 2016
  17. Dr. Ming Chen, Country of Origin: China, Visit period: December 2014 - January 2016
  18. Annalise Sundberg, Country of Origin: USA, Visit period: September 2015 - January 2016
  19. Prof. Konstantinos, Country of Origin: Greece, Visit period: April 2015 - September 2015
  20. William A. Gaviria Rojas, Country of Origin: USA, Visit period: September 2013 to July 2015
  21. Dr. Yanbo Bai, Country of Origin: China/USA, Visit period: May 2011-June 2015
  22. Xun Victor Suo, Country of Origin: France, Visit period: April 2015 -August 2016
  23. Dario Melchionni, Country of Origin: Italy, Visit period: September 2014 - May 2015
  24. Kenneth Hua, Country of Origin: USA, Visit period: September 2014 - January 2015
  25. Chris Choo, Country of Origin: USA, Visit period: September 2014 - January 2015
  26. Robert Jin, Country of Origin: USA, Visit period: September 2014 - January 2015
  27. Prof. Anna Szerling, Country of Origin: Poland, Visit period: October 2014 - Decemeber 2014
  28. Bradley Elkus, Country of Origin: USA, Visit period: May 2014 - July 2014
  29. Arnaud Janvier, Country of Origin: France, Visit period: May 2014 - July 2014
  30. Alexandre Godey, Country of Origin: France, Visit period: May 2014 - Present
  31. Benjamin Rahnema, Country of Origin: Northwestern University, USA, Visit period: January 2013 - January 2014
  32. Dr. Chu-Young Cho, Country of Origin: Korea, Visit period: June 2012 – January 2014
  33. Rofeideh Mansourian, Country of Origin: Iran, Visit period: October 2013 - January 2014
  34. Dr. Sofiane Belahsene, Country of Origin: France, Visit period: January 2014
  35. Prasanth Reddy Bijjam, Country of Origin: USA, Visit period: October 2012 - December 2013
  36. Dr. Shaban Ramezani-Darvish, Country of Origin: Iran, Visit period: May 2000 - December 2013
  37. Jason Arkin, Country of Origin: USA, Visit period: June 2013 - December 2013
  38. George Mach, Country of Origin: USA, Visit period: September 1991 - May 2013
  39. Yinjun Zhang , Country of Origin: China, Visit period: September 2011 - March 2013
  40. Selamnesh Nida, Country of Origin: Ethiopia, Visit period: September 2012 - March 2013
  41. Brock Burdyl, Country of Origin: USA, Visit period: March 2013 - June 2013
  42. Taylor Kewei Xu, Country of Origin: USA, Visit period: March 2013 - August 2013
  43. Aaron Orwasher, Country of Origin: USA, Visit period: March 2013 - August 2014
  44. Avsar Dahal, Country of Origin: Nepal, Visit period: September 2012 - February 2013
  45. Prof. Quanyong Lu, Country of Origin: China, Visit period: July 2010 -- Present
  46. Dr. Simon Gautier, Country of Origin: France, Visit period: August 2012 - August 2013
  47. Dr. Zahra Vashaei, Country of Origin: Iran, Visit period: June 2009 - January 2013
  48. Bing Zhang, Country of Origin: China, Visit period: August 2012 - January 2013
  49. Chelly Nathan, Country of Origin: France , Visit period: March 2012 – June 2012
  50. Francois Callewaert, Country of Origin: France, Visit period: March – June 2012
  51. Dr. Binh-Minh Nguyen, Country of Origin: France, Visit period: April 2005-August 2005 & Oct 2010 - Dec 2010
  52. Dr. Ekber Selcuk, Country of Origin: Turkey & Belgium, Visit period: December 2009 - December 2010
  53. Dr. Erwan Bigan, Country of Origin: France, Visit period: September 1992 - September 1993, & October 2010
  54. Jackie Bao Wang, Country of Origin: China, Visit period: September 2010
  55. Dr. Behrang Poorganji, Country of Origin: Iran, Visit period: August 2010 - August 2011
  56. Jerome Lair, Country of Origin: France, Visit period: April 2010 - June 2010
  57. Matthieu Colotte, Country of Origin: France, Visit period: April 2010 - June 2010
  58. Pierre Lavenus, Country of Origin: France, Visit period: April 2010 - July 2010
  59. Dr. Anh Hoang, Country of Origin: France, Visit period: April 2010 - Present
  60. Dr. Nam Ki Cho, Country of Origin: Korea, Visit period: April 2010 - May 2010
  61. Elham Beheshtizavareh, Country of Origin: Iran, Visit period: January 2010 - February 2010
  62. Dr. Won Jae Lee, Country of Origin: Korea, Visit period: January 2009-January 2010
  63. Dr. Chunyu Zang, Country of Origin: China, Visit period: December 2009 - May 2010
  64. Dr. Shigeyuki Kuboya, Country of Origin: Japan, Visit period: November 2008 - November 2009
  65. Dr. Shaibal Mukherjee, Country of Origin: India, Visit period: August 2009 - July 2010
  66. Dr. Nicolas Pere-Laperne, Country of Origin: France, Visit period: October 2008 - August 2009
  67. Luc Nguyen-the, Country of Origin: France, Visit period: April 2009 - August 2009
  68. Thomas Tuo Huang, Country of Origin: USA/China, Visit period: June 2009 - August 2009
  69. Alan Mahdaoui , Country of Origin: USA/France, Visit period: February 2009 - July 2009
  70. Fabien Khouri, Country of Origin: France, Visit period: April 2009-July 2009
  71. Sandra Russac, Country of Origin: France, Visit period: April 2009-July 2009
  72. Dr. Takayuki Yamanaka, Country of Origin: Japan, Visit period: February 2008 - June 2009
  73. Amir Abbas Jalali Roudsar, Country of Origin: Iran, Visit period: January 2009-February 2009
  74. Dr. IL-Kyu Park, Country of Origin: Korea, Visit period: March 2008 - January 2009
  75. Dr. Jose Luis Pau Vizcaino, Country of Origin: Spain, Visit period: October 2006 - September 2008
  76. Guillaume Rene, Country of Origin: France, Visit period: March 2008 - June 2008
  77. Aurelien Joly , Country of Origin: France, Visit period: March 2008 - June 2008
  78. Bruno Fain, Country of Origin: France, Visit period: April 2008 - July 2008
  79. Dr. Wei Zhang, Country of Origin: China, Visit period: June 2006 - March 2008
  80. Dr. Ferechteh Hosseini Teherani, Country of Origin: France, Visit period: October 2007 - December 2007
  81. Dr. Patrick Kung, Country of Origin: France, USA, Visit period: April 1993-August 1993; June 2000-July 2007
  82. Prof. Ryan McClintock, Country of Origin: Northwestern University, Evanston IL, USA, Visit period: June 2007 - July 2007
  83. Philippe Sung, Country of Origin: France, Visit period: February 2007 - June 2007
  84. Dr. Kan Mi, Country of Origin: China, Visit period: February 1999 - May 2007
  85. Dr. Euzi Fernandes da Silva, Country of Origin: Brazil, Visit period: January 2005-October 2006
  86. Dr. Alain Quivy, Country of Origin: Brazil, Visit period: January 2005-October 2006
  87. Dr. Erick Michel, Country of Origin: United States, Visit period: March 2005-September 2006
  88. Dr. Jae Su Yu, Country of Origin: Korea, Visit period: October 2002-August 2006
  89. Vuong Thi Kim Thanh, Country of Origin: France, Visit period: April 2006-August 2006
  90. Dac Tring Nguyen, Country of Origin: France, Visit period: April 2006-August 2006
  91. Xavier Martinet, Country of Origin: France, Visit period: April 2006-July 2006
  92. Mathieu Russac, Country of Origin: France, Visit period: April 2006-June 2006
  93. Dr. Frank Fuchs, Country of Origin: Germany, Visit period: September 2004-August 2005
  94. Arnaud Lecallier, Country of Origin: France, Visit period: June 2005-August 2005
  95. Dr. Pierre-Yves Delaunay, Country of Origin: France, Visit period: April 2005-July 2005
  96. Dr. Woo-Gwang Jung, Country of Origin: Korea, Visit period: January 2004-July 2005
  97. Dr. Vahid R. Yazdanpanah, Country of Origin: Iran, Visit period: November 2004-April 2005
    July 2003-June 2004
  98. Dr. Shahriar Khosravani, Country of Origin: Iran/U.S., Visit period: January 2004-December 2004
  99. Quang Nguyen, Country of Origin: France, Visit period: September 2003-January 2004
  100. Nicolas Ott, Country of Origin: France, Visit period: April 2004-August 2004
  101. Dr. Do-Hyun Kim, Country of Origin: Korea, Visit period: November 2002-December 2003
  102. Dr. Jongbum Nah, Country of Origin: Korea, Visit period: August 2002-July 2003
  103. Luca Gautero, Country of Origin: Italy, Visit period: July 2003-September 2003
  104. Dr. Kao-Chih Syao, Country of Origin: Taiwan, Visit period: March 2003-April 2003
  105. Dr. Haoxiang Zhang, Country of Origin: China, Visit period: July 2001-August 2002
  106. Dr. Igor Tralle, Country of Origin: Poland, Visit period: August 2001-July 2002
  107. Aurelien David, Country of Origin: France, Visit period: April 2002-July 2002
  108. Dr. Francois Guastavino, Country of Origin: France, Visit period: March 2000-September 2000
    April 2002-June 2002
  109. Julien Poncet, Country of Origin: France, Visit period: April 2002-June 2002
  110. Dr. Zhaojun Lin, Country of Origin: China, Visit period: September 2000-November 2001
  111. Dr. Magdy Mourad, Country of Origin: Egypt, Visit period: October 2000-September 2001
  112. Mohamed Azize, Country of Origin: France, Visit period: June 2001-September 2001
  113. Dr. Fatemeh Shahedipour, Country of Origin: Iran, Visit period: September 1999-August 2001
  114. Benoit Nesme, Country of Origin: France, Visit period: April 2001-August 2001
  115. Dr. Abbes Tahraoui, Country of Origin: Algeria, Visit period: February 1999-January 2001
  116. Dr. Zhen Wu, Country of Origin: China, Visit period: November 1997-October 2000
  117. Vinayak Dangui, Country of Origin: France, Visit period: April 2000-July 2000
  118. Sebastien Bourdelais, Country of Origin: France, Visit period: April 2000-June 2000
  119. Dr. Song Tong, Country of Origin: China, Visit period: May 1999-April 2000
  120. Dr. Vipan Kumar, Country of Origin: India, Visit period: April 1999-March 2000
  121. Dr. Keijan Luo, Country of Origin: China, Visit period: May 1999-March 2000
  122. Dr. Vladimir Litvinov, Country of Origin: Ukraine, Visit period: January 1996-September 1999
  123. Nyungeon Seon, Country of Origin: Korea, Visit period: September 1998-August 1999
  124. Juan Blanch, Country of Origin: France, Visit period: April 1999-August 1999
  125. Dr. M. De Vittorio, Country of Origin: Italy, Visit period: February 1999-March 1999
  126. Dr. Xinghong Zhang, Country of Origin: China, Visit period: February 1999-October 2000
  127. Dr. In-Hwan Lee, Country of Origin: Korea, Visit period: November 1997-January 1999
  128. Alexander Stein, Country of Origin: Germany, Visit period: July 1998-September 1998
  129. Eva Monroy, Country of Origin: Spain, Visit period: July 1998-September 1998
  130. Dr. Francisco Sanchez, Country of Origin: Spain, Visit period: July 1998-September 1998
  131. Julien Grascoeur, Country of Origin: France, Visit period: April 1998- June 1998
  132. Dr. Ho-Ki Kwon, Country of Origin: Korea, Visit period: September 1997-February 1998
  133. Dr. Jianren Xu, Country of Origin: China, Visit period: January 1994-December 1997
  134. Thibaut David, Country of Origin: France, Visit period: July 1997-November 1997
  135. Dr. Kwan Shik Kim, Country of Origin: Korea, Visit period: October 1995-September 1997
  136. Dr. Han-Jo Lim, Country of Origin: Korea, Visit period: February 1997-August 1997
  137. Dr. Hyung-Il Jeon, Country of Origin: Korea, Visit period: October 1995-August 1997
  138. Dr. Hao Feng, Country of Origin: China, Visit period: March 1997-July 1997
  139. Dr. Milan Tadic, Country of Origin: Yugoslavia, Visit period: August 1996-December 1996
  140. Dr. Kee Young Lim, Country of Origin: Korea, Visit period: October 1995-October 1996
  141. Rozen Metzinger, Country of Origin: France, Visit period: April 1996-June 1996
  142. Dr. Sirus Javadpour, Country of Origin: Iran, Visit period: September 1995-March 1996
  143. Dr. Ian Ferguson, Country of Origin: Scotland, Visit period: April 1994-February 1996
  144. Dr. Jozef Piotrowski, Country of Origin: Poland, Visit period: January 1995-July 1995
  145. Dr. Antoni Rogalski, Country of Origin: Poland, Visit period: February 1995-July 1995
  146. Dr. Lijun Wang, Country of Origin: China, Visit period: March 1993-June 1995
  147. Dr. Emil Kolev, Country of Origin: Bulgaria, Visit period: April 1992-February 1995
  148. Dr. Philippe Bove, Country of Origin: France, Visit period: March 1994-February 1995
  149. Guillaume Labeyrie, Country of Origin: France, Visit period: February 1993-June 1994
  150. Dr. Dmitri Garbuzov, Country of Origin: Russia, Visit period: June 1993-May 1994
  151. Olivier Duchemin, Country of Origin: France, Visit period: December 1993-February 1994
  152. Dr. Hitoshi Ohsato, Country of Origin: Japan, Visit period: April 1993-January 1994
  153. Dr. Wilson Caravalho, Country of Origin: Brazil, Visit period: August 1993-September 1993
  154. Dr. Antonio Rogalski, Country of Origin: Poland, Visit period: September 1992 - September 1993
  155. Dr. X. (Rose) Wang, Country of Origin: China, Visit period: January 1993-March 1993
  156. Dr. Rengarajan Sudarsanan, Country of Origin: India, Visit period: January 1992-January 1993
  157. Stephane Charriere, Country of Origin: France, Visit period: July 1992-December 1992