| 101. | Photonic Switching Using VLSI Optoelectronic Devices
Dr. Anthony L. Lentinev
AT&T Bell Laboratories
Naperville, IL, USA
February 9, 1996
|
| 102. | Heterostructure Lasers: From Early DHL to Modern QD Sturctures
Dr. Zhores I. Alferov
Ioffe Physico-Technical Institute
St. Petersburg, RUSSIA
January 26, 1996
|
| 103. | Temperature Dependent Efficiency and Modulation Characteristics of Al-free 980 nm Laser Diodes
Dr. Rashit F. Nabiev
Coherent Laser Group
Torrence, CA, USA
January 19, 1996
|
| 104. | InAs/InAsSb Type-II Superlattice Midwave Infrared Lasers
Dr. Yong-Hang Zhang
Hughes Research Labs
Malibu, CA, USA
January 18, 1996
|
| 105. | Feasibility and Future Prospects of AlGaN/GaN MODFETs
Dr. S. Noor Mohammad
Coordinated Science Laboratory
University of Illinois at Urbana-Champaign, USA
January 12, 1996
|
| 106. | Advanced Electron Microscopy of Interfaces and Interfacial Phenomena in Solids
Dr. Vinayak P. Dravid
Materials Science and Enginering Department
Northwestern University, USA
December 7, 1995
|
| 107. | Tailoring III-V Semiconductor Properties Via Precise Control of Stoichiometry
Dr. Nate Newman
Department of Materials Science
University of California at Berkeley
December 6, 1995
|
| 108. | X-Ray Standing Waves: A Chemically Sensitive Structural Probe for Surface, Interface and Thin Film Structures
Dr. Michael J. Bedzyk
Materials Science and Engineering Department
Northwestern University, USA
November 15, 1995
|
| 109. | Diode-Pumped, Solid-State Visible Lasers and its Applications
Dr. Joseph H. Zarrabi
Polaroid Corporation
Cambridge, MA, USA
November 10, 1995
|
| 110. | Synthesis and Properties of Amorphous and Crystalline Carbon Nitride
Dr. Yip-Wah Chang
Materials Science and Engineering Department
Northwestern University, USA
November 2, 1995
|
| 111. | Challenges to the Technology of Group-III Nitrides and AlGaInP/GaAs MODFET Structures
Dr. W. Peltschen
Fraunhofer Institut
Freiburg, GERMANY
October 13, 1995
|
| 112. | Optical Properties of Ordered 3-Dimensional Arrays of Structurally Confined Semiconductors
Dr. Nigel P. Johnson
Nanoelectronics Research Centre
University of Glasgow, SCOTLAND
October 13, 1995
|
| 113. | Optical Properties of Submonolayer InAs Embedded in GaAs
Dr. Clivia M. Sotomayor-Torres
Nanoelectronics Research Centre
University of Glasgow, SCOTLAND
October 12, 1995
|
| 114. | Quasi-Phasematched Parametric Interactions at 1.5 microns in Lithium Niobate Waveguides
Mr. Mark A. Arbore
Center for Nonlinear Optical Materials (CNOM)
Stanford University, USA
September 25, 1995
|
| 115. | Substrate Effects in Epitaxy As Seen By the STM: Place Exchange and Strain
Dr. Joseph A. Meyer
University of Ulm
Ulm, GERMANY
September 12, 1995
|
| 116. | Mid-Wave Infrared Lasers Based on Antimonide/Arsenide Heterostructures
Dr. Richard Miles
Hughes Research Labs
Malibu, CA, USA
August 14, 1995
|
| 117. | Chemical Beam Epitaxy for the growth of GaInAs/InP Multiple Layer Structures
Dr. Maarten Leys
Department of Physics
Eindhoven University of Technology, NETHERLANDS
August 10, 1995
|
| 118. | Temperature Dependent Efficiency and Modulation Characteristics of 980 nm Strained Quantum Well Lasers" and "Spectrodetector - Novel Monolithic Integrated Wavelength Meter Photodetectors
Dr. Rashit Nabiev
Edward L. Ginzton Laboratory
Stanford University, USA
August 5, 1995
|
| 119. | Some Rules for Circular X-Ray Dichroism: Application to Magnetic Materials and Heterostructures
Dr. Massimo Altarelli
European Sunchrontron Radiation Facility
Grenoble, FRANCE
July 28, 1995
|
| 120. | Magnetic Resonance Imaging with laser-Polarized Noble Gases
Dr. William Happer
Physics Department, Joseph Henry Laboratories
Princeton University, USA
April 27, 1995
|
| 121. | Integrated Optics Circuit Engineering
Dr. S. Iraj Najafi
Ecole Polytechnique,
Montreal, CANADA, USA
April 10, 1995
|
| 122. | Electrical and Optical Properties of Quantum Well Infrared Photodetectors (QWIPs)
Dr. Ali Shakouri
Thomas Watson Laboratory of Applied Physics, California Institute of Technology
Pasadena, CA, USA
April 10, 1995
|
| 123. | High-Performance Compound Semiconductor Optoelectronic Light-Emitters
Dr. Fred Kish
Hewlett Packard, Optoelectronics Division
San Jose, CA, USA
April 4, 1995
|
| 124. | Electron Transmission Through Ultra-Thin Metal Layers and its Spin Dependence for Magnetic Structures
Dr. Henri-Jean Drouhin
Ecole Polytechnique,
FRANCE
February 3, 1995
|
| 125. | InP Field Effect Transistors by the MOCVD Technique
Dr. Noren Pan
Raytheon Company, Research Division
Lexington, MA, USA
December 28, 1994
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