Seminars and Other Visiting Speakers by    
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76.   High-Efficiency Laser Diodes for Free-Space Communications
Major Michael Prairie, Ph.D.

U.S. Air Force Office of Scientific Research
USA
February 23, 1998
 
77.   Tunneling Spectroscopy of Semiconductor Heterostructures
Dr. Stephen W. Teitsworth

Department of Physics and Department of Electrical Enginnering
Duke University, USA
February 20, 1998
 
78.   Type-II Quantum Well Lasers for the Mid-IR
Dr. Jerry R. Meyer

Naval Research Laboratory
Washington, DC, USA
November 1, 1997
 
79.   Experiment and Theory: The Case for Superconductivity Associated with Charge-Reserviors, not Cuprate-Planes
Dr. John D. Dow

Department of Physics
Arizona State University, USA
October 24, 1997
 
80.   Ballistic Electron Emission Microscopy (BEEM) and Spectroscopy of Buried Semiconductor Heterostructures and Quantum Wells
Dr. Venky Narayanamurti

Department of Electrical and Computer Engineering, Dean, College of Engineering
University of California at Santa Barbara, USA
October 1, 1997
 
81.   Characteristics of MOVPE Grown GaN and InGaN SQW
Dr. Yasushi Iyechika

Tsukuba Research Laboratory
Sumitomo Chemical Co. Ltd., JAPAN
September 10, 1997
 
82.   Micro-Analysis with MEMS
Dr. Alan D. Feinerman

Department of Electrical Engineering
University of Illinois at Chicago, USA
June 26, 1997
 
83.   Low Dark Current Devices for Space Applications
Mr. Richard LeBlanc

Lockheed Martin Electronics and Missiles
Orlando, FL, USA
May 9, 1997
 
84.   Oxide VCSELs
Dr. Jack Jewell

Picolight, Inc.
Boulder, CO, USA
April 17, 1997
 
85.   Atomic Diffusion in Semiconductors: Basic Principles and Their Impact on Optoelectronic Device Performance
Dr. Louis J. Guido

Center for Microelectronic Materials and Structures
Yale University, USA
April 4, 1997
 
86.   Tight-Binding Models for Quantum Devices
Dr. Timothy B. Boykin

ECE Department
University of Alabama at Huntsville, USA
April 2, 1997
 
87.   Atomic Chains and Their Electronic Properties
Dr. Toshishige Yamada

E.L. Ginzton Laboratory
Stanford University, USA
March 26, 1997
 
88.   Incorporation Mechanisms of Native Defects and Dopants in HgCdTe Alloys
Dr. H.R. Vydyanath

Avyd Devices
Huntington Beach, CA, USA
March 25, 1997
 
89.   Flexible Simulation Tools for Semiconductor Devices
Dr. W.N.G. Hitchon

ECE Department
University of Wisconsin-Madison, USA
March 7, 1997
 
90.   Photoluminescence in GaAs/AlAs Single Quantum Wells Under Electric Field Bias
Dr. Linda Blue

Department of Physics
Duke University, USA
February 27, 1997
 
91.   Vertical Cavity Surface Emitting Lasers
Dr. Jack Jewell

Picolight, Inc.
Boulder, CO, USA
January 25, 1997
 
92.   Electrical Properties and Luminescent Spectra of InGaN/AlGaN/GaN Light-Emitting Diodes
Professor A.E. Yunovich

Department of Physics
Lomonosov Moscow State University, RUSSIA
November 21, 1996
 
93.   The Integrated Circuit: Historical Perspective and Future Prospects
Mr. Jack S. Kilby

Retired
Dallas, TX, USA
November 20, 1996
 
94.   Research on Optical Semiconductor Devices for Micro-Optical Circuit
Mr. Satoshi Mitsugi

Precision and Intelligence Laboratory
Tokyo Institute of Technology, Yokohama, JAPAN
November 15, 1996
 
95.   Long Wavelength Vertical-Cavity Surface-Emitting Lasers"
Mr. Noriyuki Ohnoki

Precision and Intelligence Laboratory
Tokyo Institute of Technology, Yokohama, JAPAN
November 15, 1996
 
96.   Ultrashort (< 100 fs) Laser-Semiconductor Interactions
Dr. L.A. Vern Schlie

Laser and Imaging Directorate, U.S. Air Force Phillips Laboratory (PL/LIDD)
Kirtland AFB, NM, USA
September 6, 1996
 
97.   Semiconductor Lasers and WDM Components
Dr. Mahmoud Fallahi

Optical Sciences Center
University of Arizona-Tucson, USA
June 19, 1996
 
98.   Optical Properties of II-VI Compound ZnSe and Its Modeling
Dr. Charles C. Kim

Microphysics Lab, Department of Physics
University of Illinois at Chicago, USA
April 4, 1996
 
99.   RMBE Grown Epitaxial Structure and Novel Design of AlGaN/GaN MODFETs
Dr. S. Noor Mohammad

Coordinated Science Laboratory
University of Illinois at Urbana-Champaign, USA
March 25, 1996
 
100.   Physical Simulation Tools of Microwave Devices: Recent Progress and Trends - Examples of Technological and Experimental Studies Developed at I.E.M.N.
Professor George Salmer

Institut d'Electronique et de Microelectronique du Nord (I.E.M.N.)
CNRS, Villeneuve d'Ascq Cedex, FRANCE
March 8, 1996
 

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